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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW28IH125DF

Name: STGW28IH125DF
Brand: STMicroelectronics
SKU: STGW28IH125DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW28IH125DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW28IH125DF.pdf

Description:: IGBT 1250V 60A 375W TO-247

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Product details

Overview

STGW28IH125DF from STMicroelectronics is a 1250 V, 30 A trench gate field-stop IGBT with co-packaged soft-recovery freewheeling diode in TO-247 package, optimized for resonant and soft-switching topologies. It delivers V_CE(sat) = 2.0 V (typ.) at I_C = 25 A, T_J = 25 °C, R_thJC = 0.4 °C/W (IGBT), and supports safe paralleling in high-efficiency induction heating systems.

For engineers reviewing the STGW28IH125DF datasheet, STGW28IH125DF pinout, STGW28IH125DF application, or STGW28IH125DF equivalent, key selection criteria include soft commutation capability, tight parameter distribution, low tail current, co-packaged diode VF (1.2 V typ. @ I_F = 25 A), and junction temperature rating up to 175 °C.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to simultaneously minimize conduction losses (V_CE(sat) = 2.0–2.3 V across T_J = 25–175 °C) and switching losses (E_off = 0.72 mJ typ. @ T_J = 25 °C, inductive load). Its internal schematic integrates a low-V_F soft-recovery diode with matched thermal characteristics (R_thJC = 1.47 °C/W).

The device is rated for V_CES = 1250 V, continuous I_C = 30 A at T_C = 100 °C, and pulsed I_C = 120 A. Gate drive requires ±20 V V_GE, with V_GE(th) = 5–7 V and total gate charge Q_g = 114 nC - enabling robust control in high-voltage resonant converters operating above 600 V DC bus.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1250 V - Withstands 1250 V collector-emitter blocking voltage with V_GE = 0, suitable for 900–1000 V DC-link resonant applications.
I_C (T_C = 100 °C)	30 A - Continuous collector current derated for reliable operation at case temperatures up to 100 °C in sealed induction heating enclosures.
V_CE(sat)	2.0 V (typ. @ I_C = 25 A, T_J = 25 °C) - Low saturation voltage reduces conduction loss and thermal stress in high-duty-cycle soft-switching inverters.
R_thJC (IGBT)	0.4 °C/W - Enables high power dissipation (375 W at T_C = 25 °C) with minimal junction-to-case temperature rise under forced-air or heatsink cooling.
Q_g	114 nC - Total gate charge determines required gate driver peak current (≥2 A for 10 Ω RG) and influences switching speed trade-offs in ZVS/ZCS designs.
E_off (inductive)	0.72 mJ (typ. @ V_CC = 600 V, I_C = 25 A, T_J = 25 °C) - Low turn-off energy supports high-frequency (>40 kHz) operation in microwave oven magnetron drivers.
V_F (diode)	1.2 V (typ. @ I_F = 25 A, T_J = 25 °C) - Low forward voltage minimizes freewheeling loss and improves system efficiency in half-bridge LLC resonant converters.

Pinout & Package

STGW28IH125DF is housed in a TO-247 package with isolated tab (pin 2), featuring three terminals: Gate (G), Collector (C), and Emitter (E). The metal tab is electrically connected to the collector, requiring insulated mounting in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls IGBT conduction via voltage-driven MOS-like input; requires ≥±20 V absolute max rating and 114 nC total charge for full enhancement.
2 (TAB/C)	Collector / Heatsink Interface	Electrically tied to collector; serves as primary thermal path (R_thJC = 0.4 °C/W); must be electrically isolated from chassis when used in high-side switch position.
3 (E)	Emitter	Reference node for gate drive and current sensing; carries full load current (30 A continuous) and diode reverse recovery current during commutation.

Key Features

Feature	Design Value
Soft commutation optimization	Minimized tail current and controlled dV/dt reduce EMI and snubber losses in zero-voltage switching (ZVS) resonant inverters.
Tight parameter distribution	Ensures consistent V_CE(sat), V_GE(th), and switching timing across production lots - critical for parallel IGBT operation without current imbalance.
Co-packaged low-V_F diode	1.2 V forward voltage at 25 A enables efficient freewheeling with reduced conduction loss versus discrete diode solutions in half-bridge topologies.
175 °C maximum junction temperature	Supports sustained operation in thermally constrained environments (e.g., compact microwave oven power stages) without derating below 30 A at T_C = 100 °C.
Safe paralleling capability	Positive V_CE(sat) temperature coefficient and matched dynamic parameters allow direct paralleling of multiple devices for >60 A output without external emitter resistors.

Applications

Induction Heating Systems

Microwave Oven Magnetron Drivers

Use Scenario: High-frequency (20–50 kHz) series-resonant inverter supplying power to induction cooktop coils.

IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration, handling 1250 V DC link and delivering 3–5 kW output with ZVS operation.

Use Value: Low tail current and soft-recovery diode reduce switching losses by >15% vs. standard IGBTs, enabling smaller heatsinks and higher power density.

Use Scenario: High-voltage inverter driving magnetron anode in domestic microwave ovens using voltage-doubler rectified AC input.

IC Role / Device Role / Timing Role: High-side switch in push-pull or half-bridge topology, operating at 25–30 kHz with hard-commutated turn-on and soft-commutated turn-off.

Use Value: 1250 V V_CES rating accommodates 1000 V+ transient spikes from transformer leakage inductance, improving reliability over 1000 V-rated alternatives.

Resonant LLC Converters

Industrial Solid-State Relays

Use Scenario: Primary-side switch in 1–3 kW telecom/server LLC resonant DC-DC converters with 900 V nominal input.

IC Role / Device Role / Timing Role: Zero-voltage switched (ZVS) main transistor, leveraging low C_ies (2035 pF) and controlled E_off for high-frequency efficiency.

Use Value: 0.4 °C/W R_thJC allows 375 W dissipation at T_C = 25 °C - enabling single-device operation without forced air in convection-cooled server PSUs.

Use Scenario: High-voltage AC/DC solid-state relay module for industrial HVAC motor control and lighting ballasts.

IC Role / Device Role / Timing Role: Bidirectional switching element (with anti-parallel diode) in back-to-back configuration for 240–480 VAC line switching.

Use Value: Co-packaged soft-recovery diode eliminates need for external fast-recovery diodes, reducing BOM count and PCB area while maintaining <100 ns reverse recovery time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3	1200 V V_CES, 50 A I_C, higher Q_g (170 nC), no integrated diode	Requires external ultrafast diode; better suited for hard-switched PFC stages than resonant soft-commutation	Select when higher current rating and discrete diode flexibility outweigh integrated diode convenience and soft-switching optimization.
Infineon IKW25N120T2	1200 V V_CES, 25 A I_C, lower V_CE(sat) (1.75 V), tighter E_off spec (0.55 mJ), TO-247-3L	Superior efficiency at light loads but lower current headroom; not qualified for >175 °C operation	Prefer for space-constrained 20–25 A resonant converters where junction temperature stays ≤150 °C and lowest possible conduction loss is prioritized.

Compared with IXGN50N120B3 and IKW25N120T2, STGW28IH125DF uniquely balances 1250 V blocking, 30 A current, integrated soft diode, and 175 °C rating - making it optimal for thermally demanding, high-reliability induction heating and microwave oven platforms where soft commutation and long-term stability are mandatory.

Availability

STGW28IH125DF is available at Aetrix Electronics and suitable for induction heating systems, microwave oven power modules, resonant LLC converters, and industrial solid-state relays requiring stable component supply and long-lifecycle support.

Supply support for STGW28IH125DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's IH-series trench gate field-stop IGBT family, engineered specifically for high-efficiency soft-switching power conversion in induction heating, microwave ovens, and resonant DC-DC topologies - emphasizing low tail current, tight parameter spread, and rugged thermal performance.

FAQ

Is STGW28IH125DF suitable for hard-switching applications?

No - the datasheet explicitly states it is "designed for soft commutation only." Its optimized tail current profile and lack of rugged short-circuit rating make it unsuitable for hard-switched topologies like traditional PWM inverters. Use only in ZVS or ZCS resonant circuits where voltage or current is near zero at switching instants.

What is the maximum recommended gate resistor value for reliable switching?

Based on Figure 20 and Table 6, RG ≤ 10 Ω is validated for inductive switching at 25 A and 600 V. At RG = 10 Ω, td(off) = 128 ns and tf = 82 ns at T_J = 25 °C. Increasing RG beyond 15 Ω significantly raises E_off (e.g., +120% at RG = 30 Ω per Figure 16), risking thermal runaway in high-frequency operation.

Can the TO-247 tab be used as a functional collector connection?

Yes - pin 2 (the metal tab) is internally bonded to the collector. It serves as both the primary thermal interface and the collector terminal. Electrical isolation from the heatsink is mandatory unless the collector is referenced to chassis ground; ST recommends using isolating thermal pads with ≥2.5 kV dielectric strength for safety-critical designs.

Does STGW28IH125DF support parallel operation without emitter resistors?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (per datasheet Features section) enable stable current sharing. ST confirms "safe paralleling" in the official description; however, matched gate drive layout, identical thermal mounting, and symmetrical PCB routing remain essential to prevent imbalance.

STGW28IH125DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1250 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 25A

Power - Max:: 375 W

Switching Energy:: 720µJ (off)

Input Type:: Standard

Gate Charge:: 114 nC

Td (on/off) @ 25°C:: -/128ns

Test Condition:: 600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW28IH125DF FAQ

1.How can I place an order for STGW28IH125DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW28IH125DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW28IH125DF reliable?

The price and inventory of STGW28IH125DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW28IH125DF is usually 5 days.

3.What payment methods are accepted for STGW28IH125DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW28IH125DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW28IH125DF?

STGW28IH125DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW28IH125DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW28IH125DF?

For technical support, including STGW28IH125DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW28IH125DF requirements.

6.How does Aetrix verify that STGW28IH125DF is sourced from the original manufacturer or authorized distributors?

All STGW28IH125DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW28IH125DF meets industry standards.

7.What is the process for return or replacement of STGW28IH125DF?

All STGW28IH125DF units undergo pre-shipment inspection (PSI). If there is an issue with STGW28IH125DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW28IH125DF part is unused and in its original packaging.

Return procedure for STGW28IH125DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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