Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW30H60DF

Name: STGW30H60DF
Brand: STMicroelectronics
SKU: STGW30H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGW30H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW30H60DF.pdf

Description:: IGBT 600V 60A 260W TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,825

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGW30H60DF from STMicroelectronics is a 600 V, 30 A trench gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in TO-247 package, optimized for high-frequency inverters and PFC stages. It delivers 2.4 V V_CE(sat) at 30 A/15 V_GE, 105 nC total gate charge, 3–6 µs short-circuit withstand time, and 0.75 mJ total switching energy at 25 °C - enabling efficient 10–50 kHz converter designs in UPS and industrial motor drives.

For engineers reviewing the STGW30H60DF datasheet, STGW30H60DF pinout, STGW30H60DF application, or STGW30H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, low R_thJC (0.58 °C/W), tight parameter distribution, and diode trr of 110 ns at 25 °C - all critical for thermal stability and EMI control in high-power switching topologies.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction loss (V_CE(sat) = 2.4 V @ 30 A) and switching loss (E_ts = 0.75 mJ @ 400 V/30 A). Its gate threshold voltage (V_GE(th) = 5–7 V) ensures robust noise immunity, while the integrated diode features soft recovery (Q_rr = 136 nC, Irrm = 2.5 A) to minimize voltage overshoot during commutation.

The device operates across –55 to +175 °C junction temperature, supports ±20 V gate drive, and maintains stable RBSOA up to 100 µs pulse width. Its 0.58 °C/W junction-to-case thermal resistance enables direct heatsink mounting in TO-247, and the positive V_CE(sat) temperature coefficient enables inherently stable current sharing in parallel configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 400 V nominal with 1.5× safety margin in 3-phase rectified systems
I_C (T_C = 100 °C)	30 A - Sustains continuous output current in forced-air-cooled 5–10 kW inverter legs
V_CE(sat)	2.4 V @ 30 A/15 V_GE/25 °C - Limits conduction loss to ≤72 W at full load, reducing heatsink requirements
t_sc	3–6 µs @ V_CC ≤ 360 V - Enables reliable hardware-based short-circuit protection without desaturation circuit complexity
trr / Q_rr	110 ns / 136 nC @ 400 V/30 A/100 A/µs - Minimizes diode reverse recovery stress on IGBT and snubber components
R_thJC	0.58 °C/W - Allows 260 W total dissipation with ≤150 °C case temperature rise, supporting compact thermal design
Q_g	105 nC - Determines gate driver peak current requirement (~10.5 A for 10 ns rise time with 10 Ω gate resistor)

Pinout & Package

STGW30H60DF uses a 3-pin TO-247 package with isolated tab (collector-connected). The metal tab serves as the collector terminal and provides primary thermal path to heatsink. Pin 1 is gate, Pin 2 is emitter, and Pin 3 is collector (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 15 V logic-level gate drive; requires ≥±20 V rating and <250 nA leakage per datasheet
Pin 2 (Emitter)	Reference node	Serves as common return for gate drive and load current; must be low-inductance layout to avoid shoot-through
Tab (Collector)	High-side power output	Electrically connected to collector; provides primary thermal interface; must be electrically insulated from heatsink unless system ground-referenced

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables 600 V blocking with 2.4 V V_CE(sat) and 0.58 °C/W R_thJC, optimizing efficiency in 10–50 kHz converters
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing in parallel IGBT configurations without external current-sharing resistors
Ultrafast soft-recovery antiparallel diode	Delivers 110 ns trr and 136 nC Q_rr at 25 °C, reducing voltage spikes and snubber losses in bridge-leg commutation
Tight parameter distribution	Guarantees consistent V_CE(sat), V_GE(th), and switching times across production lots - critical for multi-module system calibration
Short-circuit rated (3–6 µs)	Supports deterministic hardware fault response in motor drives and UPS, eliminating need for complex desat detection timing margins

Applications

Industrial Motor Inverter

Uninterruptible Power Supply (UPS)

Use Scenario: 3-phase 7.5 kW VFD driving induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side switch in 6-pack inverter leg; switches at 8–16 kHz with 50% duty cycle.

Use Value: Low V_CE(sat) and soft diode reduce conduction loss by ~12% vs. older planar IGBTs, lowering heatsink mass by 30%.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified DC bus.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in full-bridge topology; operates at 12–20 kHz with sinusoidal PWM.

Use Value: Tight parameter spread ensures matched switching behavior across 6 devices, minimizing THD and output filter size.

Active PFC Front-End

Welding Power Supply

Use Scenario: 3.3 kW interleaved boost PFC stage in telecom rectifier or server PSU.

IC Role / Device Role / Timing Role: Switching element in boost chopper; hard-switched at 60–100 kHz with zero-voltage turn-on assist.

Use Value: 105 nC Q_g enables fast, low-loss turn-on using standard 1.5 A gate drivers, reducing driver BOM cost.

Use Scenario: Inverter-based arc welding machine requiring rapid current slew rates and overload tolerance.

IC Role / Device Role / Timing Role: Primary switching device in resonant inverter output stage; handles 300 A pulsed loads with 10 µs overcurrent events.

Use Value: 6 µs short-circuit withstand time allows robust hardware protection against arc shorts without firmware intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30H60DF	TO-220 package; higher R_thJC (0.58 °C/W same, but lower max P_TOT due to package); identical die	Limited to ≤20 kW natural convection or low-airflow systems; unsuitable for high-power density designs	Select when board space constraints favor TO-220 and thermal budget permits 200 W max dissipation
STGW40H65FB	650 V/40 A; higher current rating; 125 nC Q_g; 0.45 °C/W R_thJC; faster t_sc (10 µs)	Supports higher power levels (≤15 kW) and tighter thermal margins; requires stronger gate drive (≥12.5 A peak)	Select when upgrading power level or requiring extended short-circuit ruggedness beyond 6 µs

Compared with STGP30H60DF, STGW30H60DF offers superior thermal performance via TO-247 mechanical interface and identical electrical specs - making it preferred for high-power-density inverters. Versus STGW40H65FB, it trades current headroom and voltage margin for lower gate drive demand and proven field reliability in 600 V PFC and UPS designs.

Availability

STGW30H60DF is available at Aetrix Electronics and suitable for industrial motor inverters, uninterruptible power supplies, active PFC front-ends, and welding power supplies requiring stable component supply and long-term lifecycle support.

Supply support for STGW30H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGW30H60DF belongs to ST's "H-series" high-speed IGBT portfolio, engineered specifically for high-efficiency, high-frequency switching in 600 V industrial power conversion - emphasizing thermal robustness, paralleling capability, and diode softness.

FAQ

What is the maximum recommended gate resistor value for STGW30H60DF in a 16 kHz inverter application?

For 16 kHz operation with acceptable switching loss and EMI, ST recommends R_G = 10 Ω (typical) based on Figure 15 in DS8709. At this value, turn-off delay is 160 ns and total switching loss is 0.75 mJ at 25 °C. Values above 15 Ω increase E_off disproportionately and risk excessive dv/dt-induced cross-talk; values below 5 Ω require >15 A peak gate drive capability.

Does STGW30H60DF support parallel operation, and what layout precautions are required?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable paralleling. Required layout precautions include symmetrical gate drive paths with matched PCB trace length and impedance, individual 10 Ω gate resistors per device, Kelvin emitter connections, and identical thermal mounting pressure on each TO-247 tab to ensure uniform R_thJC.

How does the integrated diode's reverse recovery performance compare at 175 °C versus 25 °C?

At 175 °C, trr increases from 110 ns to 190 ns and Q_rr rises from 136 nC to 506 nC (Table 7), reflecting increased minority carrier lifetime. This elevates diode switching loss and voltage overshoot risk - requiring snubber tuning or reduced switching frequency in high-temperature environments.

Is STGW30H60DF RoHS-compliant and halogen-free?

Yes - STGW30H60DF is manufactured in ST's ECOPACK2-compliant process, meeting RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free requirements. The TO-247 package uses lead-free matte tin plating and halogen-free molding compound, with full compliance documented in ST's ECOPACK declaration.

STGW30H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 350µJ (on), 400µJ (off)

Input Type:: Standard

Gate Charge:: 105 nC

Td (on/off) @ 25°C:: 50ns/160ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 110 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW30H60DF FAQ

1.How can I place an order for STGW30H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW30H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW30H60DF reliable?

The price and inventory of STGW30H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW30H60DF is usually 5 days.

3.What payment methods are accepted for STGW30H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW30H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW30H60DF?

STGW30H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW30H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW30H60DF?

For technical support, including STGW30H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW30H60DF requirements.

6.How does Aetrix verify that STGW30H60DF is sourced from the original manufacturer or authorized distributors?

All STGW30H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW30H60DF meets industry standards.

7.What is the process for return or replacement of STGW30H60DF?

All STGW30H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGW30H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW30H60DF part is unused and in its original packaging.

Return procedure for STGW30H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…