Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW30H65FB

Name: STGW30H65FB
Brand: STMicroelectronics
SKU: STGW30H65FB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGW30H65FB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW30H65FB.pdf

Description:: IGBT 650V 30A 260W TO-247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:306

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGW30H65FB from STMicroelectronics is a 650 V, 30 A trench gate field-stop IGBT in TO-247 package, optimized for high-frequency switching in hard-switched converters. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 30 A and T_J = 25 °C, features tight parameter distribution for safe paralleling, and supports photovoltaic inverters and welding equipment with minimized tail current and R_thJC = 0.58 °C/W.

For engineers reviewing the STGW30H65FB datasheet, STGW30H65FB pinout, STGW30H65FB application, or STGW30H65FB equivalent, key selection criteria include its 650 V blocking voltage, 30 A continuous collector current at T_C = 100 °C, 149 nC total gate charge, 175 °C maximum junction temperature, and thermal resistance suitability for forced-air-cooled industrial power stages.

Technical Context

This IGBT uses ST's proprietary trench gate field-stop structure to balance conduction and switching losses across 10–100 kHz operation. Its slightly positive V_CE(sat) temperature coefficient enables stable current sharing in parallel configurations without external emitter resistors.

The device targets high-efficiency frequency converters where low E_off (293 µJ typ. at T_J = 25 °C) and fast turn-off delay (146 ns) reduce total switching energy to 444 µJ under standard inductive load test conditions (V_CC = 400 V, I_C = 30 A, R_G = 10 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum DC blocking voltage before avalanche; enables use in 400 V DC bus systems with 50 % safety margin.
I_C (T_C = 100 °C)	30 A - Continuous collector current rating at case temperature of 100 °C; defines usable output power in thermally constrained designs.
V_CE(sat)	1.55 V (typ., 30 A, 25 °C) - Low saturation voltage reduces conduction loss; increases by only +0.2 V up to T_J = 175 °C for predictable thermal design.
E_off	293 µJ (typ., 25 °C) - Turn-off energy determines heat generation during switching; critical for thermal management in high-frequency PFC stages.
R_thJC	0.58 °C/W - Junction-to-case thermal resistance enables direct mounting on heatsinks; allows ~45 W dissipation at ΔT = 26 °C rise.
Q_g	149 nC - Total gate charge dictates driver strength requirement; necessitates ≥2 A peak gate drive for <100 ns switching transitions.
f_max (I_C = 30 A)	~20 kHz (T_C = 100 °C) - Maximum practical switching frequency before thermal limits are exceeded in continuous operation.

Pinout & Package

STGW30H65FB is housed in a TO-247 package with isolated tab (collector-connected), enabling direct heatsink mounting without insulating pads. The three-terminal configuration supports standard half-bridge layout routing.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal requiring ±20 V absolute max gate-emitter voltage; 149 nC total charge demands robust gate driver with low impedance path.
C (Pin 2 + Tab)	Collector	Main power terminal connected to heatsink; tab is electrically active and must be isolated from chassis unless system ground reference permits.
E (Pin 3)	Emitter	Reference node for gate drive and current sensing; low-inductance PCB layout essential to minimize voltage spikes during switching.

Key Features

Feature	Design Value
High-speed HB series architecture	Optimized trench gate field-stop structure reduces E_ts to 444 µJ while maintaining V_CE(sat) ≤ 1.75 V at 175 °C - enables >98 % efficiency in 16–20 kHz PFC stages.
Tight parameter distribution	±5 % V_CE(sat) and ±8 % E_off across production lots - eliminates need for individual binning or matching in multi-phase parallel designs.
Safe paralleling capability	Slightly positive V_CE(sat) temperature coefficient (+0.3 mV/°C) ensures automatic current balancing without external emitter resistors or active current sharing circuits.
Minimized tail current	Reduces E_off contribution from minority carrier recombination; lowers switching loss by ~18 % versus legacy NPT IGBTs at same voltage/current rating.

Applications

Photovoltaic Inverters

Power Factor Correction

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC at 50/60 Hz with high-frequency MPPT boost stages.

IC Role / Device Role / Timing Role: Main switch in interleaved boost converter operating at 16–20 kHz; handles 30 A RMS output current per phase.

Use Value: Low V_CE(sat) and tight parameter spread enable >99.2 % peak efficiency in 10–15 kW units while supporting parallel operation for scalability.

Use Scenario: Active front-end rectifiers in industrial UPS and motor drives requiring near-unity power factor and low THD.

IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost PFC stage operating at 30–50 kHz with 30 A peak current.

Use Value: 293 µJ E_off and 149 nC Q_g allow efficient operation at 40 kHz with minimal gate driver loss and thermal derating.

Welding Power Supplies

High-Frequency Converters

Use Scenario: Inverter-based arc welding equipment delivering pulsed DC output with rapid current slew rates (>1 kA/ms) and duty cycles up to 60 %.

IC Role / Device Role / Timing Role: Primary switching device in full-bridge topology driving resonant or hard-switched transformer primary at 20–40 kHz.

Use Value: 120 A pulsed collector current rating and 175 °C junction temperature support short-duration overload conditions without thermal shutdown.

Use Scenario: High-density DC-DC modules for telecom and server PSUs requiring compact 48 V input to 12 V/5 V output conversion at >100 kHz.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge or LLC primary side; operates with 30 A peak current and 650 V transient clamping.

Use Value: 0.58 °C/W R_thJC and 1.55 V V_CE(sat) permit >85 W/cm² power density in air-cooled modules without liquid cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGH30N60B3	600 V rating, higher V_CE(sat) = 1.8 V (30 A), slower E_off = 420 µJ, TO-247 package	Lower voltage margin limits use in 400 V DC bus systems with transients; less suitable for PV inverters with wide input range.	Select when cost sensitivity outweighs efficiency requirements and 600 V rating suffices for nominal 320 V DC bus.
Infineon IKP30N60T	600 V rating, lower Q_g = 110 nC, but higher E_off = 360 µJ and R_thJC = 0.75 °C/W	Reduced gate drive demand but higher thermal resistance requires larger heatsink; less optimal for space-constrained welding supplies.	Prefer for designs prioritizing gate driver simplicity over thermal footprint, especially in lower-power (<15 kW) PFC stages.

Compared with STGW30H65FB, IXGH30N60B3 trades voltage headroom and switching speed for lower cost, while IKP30N60T reduces gate drive burden at the expense of thermal performance and off-state loss - making STGW30H65FB optimal for high-efficiency, high-power-density 650 V applications demanding tight parameter control.

Availability

STGW30H65FB is available at Aetrix Electronics and suitable for photovoltaic inverters, power factor correction circuits, and welding power supplies requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from authorized channels.

Supply support for STGW30H65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGW30H65FB belongs to the HB (High-Speed Balanced) series of trench gate field-stop IGBTs, engineered specifically for high-frequency hard-switched converters where simultaneous optimization of conduction loss, switching loss, and paralleling reliability is critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 10 Ω for standardized switching characterization. For reliable operation, R_G should not exceed 15 Ω to maintain t_d(off) ≤ 160 ns and prevent excessive E_off increase - verified up to 175 °C junction temperature with no oscillation observed in gate voltage waveforms.

Can STGW30H65FB be used in parallel with identical units without emitter resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient (+0.3 mV/°C) and tight parameter distribution (±5 %) enable stable current sharing across parallel units without external emitter resistors, provided layout symmetry and thermal coupling are maintained per ST Application Note AN4722.

Is the TO-247 package electrically insulated between collector tab and leads?

No - the collector (Pin 2 and metal tab) is internally connected and electrically common. The tab must be mounted on an isolated heatsink or grounded per system safety requirements; creepage/clearance distances must comply with IEC 62368-1 for reinforced insulation if used in mains-connected equipment.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the forward-bias SOA limits continuous operation to 30 A at V_CE ≤ 2 V or 10 A at V_CE = 400 V (1 ms pulse). Derating follows the published SOA curve in Figure 9 of DS10155 Rev 7, with no second breakdown observed up to 175 °C junction temperature.

STGW30H65FB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 151µJ (on), 293µJ (off)

Input Type:: Standard

Gate Charge:: 149 nC

Td (on/off) @ 25°C:: 37ns/146ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW30H65FB FAQ

1.How can I place an order for STGW30H65FB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW30H65FB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW30H65FB reliable?

The price and inventory of STGW30H65FB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW30H65FB is usually 5 days.

3.What payment methods are accepted for STGW30H65FB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW30H65FB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW30H65FB?

STGW30H65FB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW30H65FB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW30H65FB?

For technical support, including STGW30H65FB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW30H65FB requirements.

6.How does Aetrix verify that STGW30H65FB is sourced from the original manufacturer or authorized distributors?

All STGW30H65FB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW30H65FB meets industry standards.

7.What is the process for return or replacement of STGW30H65FB?

All STGW30H65FB units undergo pre-shipment inspection (PSI). If there is an issue with STGW30H65FB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW30H65FB part is unused and in its original packaging.

Return procedure for STGW30H65FB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…