Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STGW30NC60KD

Part No.:
STGW30NC60KD
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixSTGW30NC60KD.pdf
Description:
IGBT 600V 60A 200W TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:110

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STGW30NC60KD from STMicroelectronics is a 30 A, 600 V short-circuit rugged IGBT co-packaged with an ultra-fast freewheeling diode in TO-247 package, featuring 2.1 V VCE(sat) at 20 A/25°C, 10 µs short-circuit withstand time, and low Cres/Cies ratio - deployed in high-frequency motor drive inverters.

For engineers reviewing the STGW30NC60KD datasheet, STGW30NC60KD pinout, STGW30NC60KD application, or STGW30NC60KD equivalent, key selection criteria include VCE(sat) stability over temperature, diode reverse recovery performance (trr = 40 ns @ 25°C), gate charge (Qg = 96 nC), thermal resistance (Rthj-case = 0.625 °C/W), and short-circuit robustness under 12 V gate drive.

Technical Context

This IGBT employs ST's PowerMESH™ process to balance conduction loss and switching speed. It delivers 2.1 V typical VCE(sat) at 20 A/25°C and maintains 1.9 V at 125°C, while its 46 pF Cres and 2170 pF Cies yield a low 0.021 Cres/Cies ratio, minimizing cross-conduction risk in bridge configurations.

The integrated diode exhibits 2.6 V forward voltage at 20 A/25°C and 1.6 V at 125°C, with trr = 40 ns and Qrr = 50 nC under standard test conditions (VR = 50 V, di/dt = 100 A/µs), enabling clean commutation in hard-switched inverters up to 20 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VCE(sat)2.1 V @ 20 A, 25°C - enables low conduction loss in 600 V motor drives
tscw10 µs @ VCE = 300 V, Tj = 125°C - supports reliable short-circuit protection without desat detection circuitry
Cres/Cies46/2170 pF - ratio of 0.021 reduces Miller-induced turn-on risk in half-bridge operation
Qg96 nC @ VGE = 15 V - determines gate driver power requirement and switching speed trade-off
Rthj-case0.625 °C/W - allows 200 W dissipation at 25°C case temperature, critical for heatsink sizing
trr (diode)40 ns @ 20 A, 25°C - limits voltage overshoot and EMI during inductive turn-off

Pinout & Package

TO-247 package: 3-terminal through-hole outline with isolated mounting tab (collector connected to tab), standardized for industrial power modules and discrete inverter legs.

Pin/TerminalCircuit RoleDesign Meaning
Collector (Tab)Main current path inputElectrically connected to metal tab - requires insulated mounting and direct heatsink contact for thermal management
EmitterMain current path outputLow-inductance return path for load current; referenced to gate drive ground
GateControl terminalHigh-impedance MOS-controlled input requiring 15 V nominal drive and <100 nA leakage

Key Features

FeatureDesign Value
Short-circuit ruggedness10 µs withstand time at 125°C junction temperature - eliminates need for fast desaturation sensing in many industrial drives
Co-packaged diodeUltra-fast freewheeling diode with 40 ns trr and 50 nC Qrr - reduces snubber requirements and improves efficiency in PWM inverters
Low Cres/Cies ratio0.021 - suppresses false turn-on during high dv/dt commutation, enhancing half-bridge reliability
PowerMESH™ processOptimized cell layout delivering 2.1 V VCE(sat) and 96 nC Qg simultaneously - balances conduction and switching losses

Applications

Industrial Motor DrivesHigh-Frequency Inverters

Use Scenario: 3-phase 7.5 kW AC induction motor control in HVAC compressors using 16 kHz PWM.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 30 A RMS output current with 600 V blocking capability.

Use Value: 10 µs short-circuit tolerance enables simplified protection architecture; low VCE(sat) reduces heatsink size by ~18% vs comparable 650 V IGBTs.

Use Scenario: DC-AC conversion in solar microinverters operating at 20–25 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switch in unipolar PWM topology; commutates inductive current with integrated diode recovery.

Use Value: 40 ns diode trr minimizes voltage spike and EMI; 96 nC Qg allows use of cost-effective 2 A peak gate drivers.

UPS SystemsWelding Equipment

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output with battery backup.

IC Role / Device Role / Timing Role: Inverter-stage power switch handling bidirectional energy flow during transfer and regeneration.

Use Value: Rthj-case = 0.625 °C/W supports continuous 200 W dissipation; 125°C max Tj rating ensures reliability under sustained overload.

Use Scenario: IGBT-based inverter welder with variable duty cycle and 10–20 kHz arc stabilization.

IC Role / Device Role / Timing Role: Primary switching element in resonant LLC or phase-shifted full-bridge topology.

Use Value: Low Cres/Cies prevents shoot-through during zero-voltage switching transitions; 125 A pulsed ICP accommodates 300% surge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN30N60B3VCE(sat) = 2.3 V @ 20 A/25°C; tscw = 5 µs; Qg = 110 nCHigher conduction loss and shorter short-circuit margin - requires tighter gate drive timing and faster protectionPrefer when higher ruggedness is not required and lower-cost gate drivers suffice
Infineon IKP30N60TVCE(sat) = 1.8 V @ 20 A/25°C; tscw = 8 µs; Cres/Cies = 0.025Better conduction efficiency but reduced short-circuit margin and higher Miller ratio - increases cross-conduction risk in dense layoutsChoose for maximum efficiency in thermally constrained designs where protection is already implemented

Compared with IXGN30N60B3 and IKP30N60T, STGW30NC60KD offers the longest short-circuit withstand time (10 µs) and lowest Cres/Cies ratio (0.021), making it optimal for cost-sensitive industrial inverters needing robust fault tolerance without added protection circuitry.

Availability

STGW30NC60KD is available at Aetrix Electronics and suitable for industrial motor drives, high-frequency inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STGW30NC60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's PowerMESH™ IGBT portfolio, engineered specifically for high-efficiency, medium-power industrial inverters where ruggedness, thermal performance, and integrated diode quality are critical system-level requirements.

FAQ

What is the maximum continuous collector current at 100°C case temperature?

The STGW30NC60KD supports 28 A continuous collector current at TC = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package and internal chip design, and must be respected in heatsink-limited applications such as enclosed motor drives.

Is the integrated diode rated for 30 A RMS or peak current?

The co-packaged diode is rated for 30 A RMS forward current at TC = 25°C (Table 2), matching the IGBT's 30 A rating. Its surge capability reaches 120 A for 10 ms (sinusoidal), confirming suitability for motor-start transient currents without external diode supplementation.

Can STGW30NC60KD operate reliably with 12 V gate drive?

Yes - the device is characterized for short-circuit withstand at VGE = 12 V (tscw = 10 µs), and VGE(th) ranges from 4.5 V to 6.5 V. A 12 V drive ensures sufficient overdrive margin above threshold while avoiding gate oxide stress associated with ±20 V absolute maximum ratings.

Does the TO-247 package have a conductive mounting tab?

Yes - the metal tab is electrically connected to the collector terminal, as confirmed by the internal schematic (Figure 1) and mechanical drawings. Electrical isolation via mica washer or insulating pad is mandatory when mounting to grounded heatsinks to prevent short circuits.

STGW30NC60KD Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
60 A
Current - Collector Pulsed (Icm):
125 A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 20A
Power - Max:
200 W
Switching Energy:
350µJ (on), 435µJ (off)
Input Type:
Standard
Gate Charge:
96 nC
Td (on/off) @ 25°C:
29ns/120ns
Test Condition:
480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):
40 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

STGW30NC60KD FAQ

1.How can I place an order for STGW30NC60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW30NC60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW30NC60KD reliable?

The price and inventory of STGW30NC60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW30NC60KD is usually 5 days.

3.What payment methods are accepted for STGW30NC60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW30NC60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW30NC60KD?

STGW30NC60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW30NC60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW30NC60KD?

For technical support, including STGW30NC60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW30NC60KD requirements.

6.How does Aetrix verify that STGW30NC60KD is sourced from the original manufacturer or authorized distributors?

All STGW30NC60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW30NC60KD meets industry standards.

7.What is the process for return or replacement of STGW30NC60KD?

All STGW30NC60KD units undergo pre-shipment inspection (PSI). If there is an issue with STGW30NC60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW30NC60KD part is unused and in its original packaging.

Return procedure for STGW30NC60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGW30NC60KD Tags

  • STGW30NC60KD
  • STGW30NC60KD PDF
  • STGW30NC60KD Datasheet
  • STGW30NC60KD Specifications
  • STGW30NC60KD Images
  • STMicroelectronics
  • STMicroelectronics STGW30NC60KD
  • Buy STGW30NC60KD
  • STGW30NC60KD Price
  • STGW30NC60KD Distributor
  • STGW30NC60KD Supplier
  • STGW30NC60KD Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER