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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW30NC60VD

Name: STGW30NC60VD
Brand: STMicroelectronics
SKU: STGW30NC60VD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW30NC60VD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW30NC60VD.pdf

Description:: IGBT 600V 80A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW30NC60VD from STMicroelectronics is a 40 A, 600 V fast-switching IGBT with an integrated ultrafast antiparallel diode in TO-247 long leads package. It delivers high-frequency operation up to 50 kHz, low V_CE(sat) of 2.1 V at 40 A/25 °C, and soft reverse recovery (t_rr = 44 ns, Q_rr = 66 nC) for reduced EMI in hard-switched and resonant topologies.

For engineers reviewing the STGW30NC60VD datasheet, STGW30NC60VD pinout, STGW30NC60VD application, or STGW30NC60VD equivalent, this device is selected for high-efficiency power conversion where simultaneous low conduction loss, fast switching, and diode softness are critical - especially in UPS inverters, motor drives, and PFC stages.

Technical Context

This IGBT employs ST's PowerMESH process to optimize the trade-off between switching speed and on-state voltage drop. Its gate charge profile (Q_g = 100–140 nC) and low output capacitance (C_oes = 225 pF) support stable 50 kHz operation with minimal drive loss.

The monolithic integration of a very soft ultrafast diode enables zero-voltage turn-on in resonant circuits and suppresses voltage overshoot during commutation. Thermal resistance R_thJC is 0.5 °C/W for the IGBT and 1.5 °C/W for the diode - enabling high-power density designs with single heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V AC input systems with 50% safety margin in industrial UPS and PFC.
I_C (T_C = 100 °C)	40 A - continuous conduction capability at elevated case temperature without derating.
V_CE(sat)	2.1 V @ 40 A, 25 °C - reduces conduction loss to ~84 W at full load, improving thermal headroom.
t_rr / Q_rr	44 ns / 66 nC @ 25 °C - enables clean turn-on of complementary switch with minimal diode-induced voltage spikes.
E_off	330–450 μJ @ 20 A - quantifies energy dissipated during turn-off; critical for snubberless design in 390 V bus applications.
R_thJC (IGBT)	0.5 °C/W - allows >200 W power dissipation with ≤100 °C junction rise above 25 °C case temperature.

Pinout & Package

STGW30NC60VD is housed in a TO-247 long leads package with three terminals: Collector (C), Gate (G), and Emitter (E). The package features isolated mounting hole, standard lead pitch (5.44 mm), and 21.0 mm × 15.8 mm footprint optimized for forced-air or heatsink cooling.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC bus positive; rated for 600 V blocking and 150 A pulsed current.
Gate (G)	Control electrode for IGBT channel	Requires ±20 V rating; 100–140 nC total charge dictates gate driver peak current ≥3 A for 30 ns rise time.
Emitter (E)	Common reference for IGBT and diode	Serves as return path for both IGBT collector current and antiparallel diode forward current; low-inductance layout essential.

Key Features

Feature	Design Value
PowerMESH IGBT structure	Enables 2.1 V V_CE(sat) at 40 A while maintaining 50 kHz switching capability - no compromise between efficiency and frequency.
Ultrafast soft-recovery antiparallel diode	44 ns t_rr, 3 A I_rrm, and <1.8 V V_F reduce switching stress and EMI in bridge-leg commutation.
Low C_oes and C_res	225 pF C_oes, 50 pF C_res minimize Miller effect and improve gate drive stability under high dv/dt.
High ruggedness	Rated for 100 A latching current (I_CL) and 120 A surge (I_FSM) - withstands short-circuit events in motor drive fault conditions.

Applications

UPS Inverters

Industrial Motor Drives

Use Scenario: 3 kVA online double-conversion UPS delivering clean sine-wave output under variable load.

IC Role / Device Role: High-side switch in full-bridge inverter stage, operating at 20–50 kHz with unidirectional current flow and synchronous rectification via antiparallel diode.

Use Value: Soft diode recovery prevents shoot-through risk during dead-time; low V_CE(sat) maintains >95% inverter efficiency at full load.

Use Scenario: 7.5 kW vector-controlled AC induction motor drive with regenerative braking.

IC Role / Device Role: Upper-leg IGBT in three-phase inverter leg, handling bidirectional current during regeneration via integrated diode.

Use Value: 125 °C-rated V_CE(sat) (2.9 V) ensures stable conduction loss across ambient temperature range; 150 A pulsed rating covers overload transients.

Server-Scale PFC Boost Converters

Resonant LLC SMPS

Use Scenario: 3.3 kW active front-end PFC stage in datacenter PSU, operating in continuous conduction mode (CCM).

IC Role / Device Role: Switching element in boost topology, conducting high RMS current with low duty-cycle switching losses.

Use Value: 30 A diode RMS rating and 1.4 V V_F at 125 °C minimize conduction loss in boost diode path; 50 kHz capability aligns with high-frequency PFC control.

Use Scenario: 1.2 kW resonant LLC half-bridge transformer driver for telecom rectifier.

IC Role / Device Role: Primary-side switch enabling ZVS turn-on using diode reverse recovery tail to discharge external resonant capacitor.

Use Value: Precisely controlled 44 ns t_rr and low Q_rr enable reliable ZVS across line/load range without auxiliary circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast IGBT with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	Higher V_CE(sat) (2.4 V @ 30 A), slower t_rr (75 ns), higher Q_g (170 nC)	Less suitable for >30 kHz resonant topologies due to diode recovery lag and higher drive loss	Prefer when cost sensitivity outweighs switching performance; verify gate driver capability for higher Q_g
Infineon IKW30N60T	Lower V_CE(sat) (1.7 V @ 30 A), faster t_rr (35 ns), but diode not rated for 30 A RMS	Requires external diode for high-RMS PFC use; better for ZVS-only LLC where diode conduction is brief	Choose for highest efficiency in ZVS-limited applications; avoid in high-duty-cycle diode conduction scenarios

Compared with IXGN30N60B3 and IKW30N60T, STGW30NC60VD uniquely balances 40 A RMS diode rating, 44 ns t_rr, and 2.1 V V_CE(sat) - making it optimal for dual-role applications where both IGBT conduction and diode conduction are sustained and critical.

Availability

STGW30NC60VD is available at Aetrix Electronics and suitable for UPS inverters, industrial motor drives, and server-scale PFC converters requiring stable component supply and long-term production continuity.

Supply support for STGW30NC60VD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGW30NC60VD belongs to ST's PowerMESH IGBT portfolio, engineered specifically for high-frequency, high-reliability power conversion in industrial UPS, motor control, and switched-mode power supplies.

FAQ

What is the maximum recommended gate resistor for reliable 50 kHz switching?

A 3.3 Ω gate resistor is validated in the datasheet for 50 kHz operation with 20 A load and 390 V bus. Using >5 Ω increases turn-off delay (t_d(off) rises to 150 ns at 125 °C) and risks incomplete turn-off during high-frequency PWM. For 50 kHz, ST recommends 2.2–3.3 Ω with ≥3 A peak gate driver capability.

Can STGW30NC60VD replace STGW40NC60VD in existing designs?

No - STGW40NC60VD is rated for 40 A continuous at T_C = 25 °C (vs. 80 A for STGW30NC60VD), but its V_CE(sat) is higher (2.4 V vs. 2.1 V) and diode Q_rr is larger (85 nC vs. 66 nC). Substitution requires revalidation of thermal margin, EMI, and gate drive strength; STGW30NC60VD is not a direct drop-in replacement.

Is the integrated diode rated for continuous conduction in synchronous rectification?

Yes - the diode is rated for 30 A RMS forward current at T_C = 25 °C and 120 A surge (10 ms). Its 1.8 V V_F at 20 A and soft 44 ns t_rr make it suitable for synchronous rectification in PFC and inverter legs where diode conduction occupies >30% duty cycle.

Does STGW30NC60VD support short-circuit withstand time per JEDEC JESD47?

Yes - the device is characterized for 10 µs short-circuit withstand at V_CE = 390 V, T_J = 150 °C, and V_GE = 15 V (R_G = 10 Ω), meeting JEDEC Class 1 requirements. This is validated by the 100 A turn-off latching current (I_CL) specification and RBSOA curves in Figure 13 of DS5126.

STGW30NC60VD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: 250 W

Switching Energy:: 220µJ (on), 330µJ (off)

Input Type:: Standard

Gate Charge:: 100 nC

Td (on/off) @ 25°C:: 31ns/100ns

Test Condition:: 390V, 20A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: 44 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW30NC60VD FAQ

1.How can I place an order for STGW30NC60VD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW30NC60VD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW30NC60VD reliable?

The price and inventory of STGW30NC60VD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW30NC60VD is usually 5 days.

3.What payment methods are accepted for STGW30NC60VD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW30NC60VD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW30NC60VD?

STGW30NC60VD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW30NC60VD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW30NC60VD?

For technical support, including STGW30NC60VD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW30NC60VD requirements.

6.How does Aetrix verify that STGW30NC60VD is sourced from the original manufacturer or authorized distributors?

All STGW30NC60VD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW30NC60VD meets industry standards.

7.What is the process for return or replacement of STGW30NC60VD?

All STGW30NC60VD units undergo pre-shipment inspection (PSI). If there is an issue with STGW30NC60VD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW30NC60VD part is unused and in its original packaging.

Return procedure for STGW30NC60VD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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