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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW30NC60WD

Name: STGW30NC60WD
Brand: STMicroelectronics
SKU: STGW30NC60WD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW30NC60WD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW30NC60WD.pdf

Description:: IGBT 600V 60A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW30NC60WD from STMicroelectronics is a 30 A, 600 V ultra-fast IGBT with integrated soft ultra-fast recovery antiparallel diode in TO-247 package. It delivers 2.1 V typical V_CE(sat) at 20 A/25 °C, 40 ns typical reverse recovery time (t_rr) at 25 °C, and 102 nC total gate charge - optimized for high-frequency motor controls, UPS inverters, and resonant SMPS topologies.

For engineers reviewing the STGW30NC60WD datasheet, STGW30NC60WD pinout, STGW30NC60WD application, or STGW30NC60WD equivalent, key selection criteria include its low C_RES/C_IES ratio (52/2080 pF), 1640 A/µs turn-on di/dt capability at 25 °C, junction-to-case thermal resistance of 0.63 °C/W, and co-pack diode integration enabling cross-conduction immunity in half-bridge configurations.

Technical Context

This IGBT employs ST's Power MESH™ process to balance switching speed and conduction loss. Its internal structure integrates a monolithic antiparallel diode with very soft recovery (I_RRM = 2.5 A, Q_rr = 50 nC at 25 °C), minimizing voltage overshoot and EMI during turn-off.

The device operates with ±20 V gate-emitter rating and exhibits stable threshold voltage (V_GE(th) = 3.75–5.75 V) across –55 to 150 °C. Dynamic performance is characterized under standardized inductive-load test conditions (V_CC = 390 V, I_C = 20 A, R_G = 10 Ω), with turn-off delay (t_d(off)) increasing from 118 ns to 151 ns as case temperature rises from 25 °C to 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient clamping
I_C (100 °C)	30 A continuous - defines maximum thermally sustainable output current at industrial ambient temperatures
V_CE(sat) (20 A, 25 °C)	2.1 V typical - determines conduction loss of 42 W at full rated current, critical for thermal design
t_rr (20 A, 25 °C)	40 ns - enables >100 kHz operation without excessive diode recovery loss or shoot-through risk
C_RES/C_IES	52/2080 pF - low ratio suppresses Miller-induced false turn-on in high-dV/dt bridge legs
R_thj-case (IGBT)	0.63 °C/W - allows 126 W power dissipation before reaching 150 °C junction limit at 25 °C case temperature
E_on + E_off	486 µJ total at 25 °C - quantifies switching energy per cycle for efficiency modeling in 20–50 kHz PFC stages

Pinout & Package

Supplied in TO-247 package with isolated mounting flange, 3-terminal configuration (Collector, Gate, Emitter), lead-free ECOPACK® compliant construction, and JEDEC-standard mechanical dimensions (D = 20.0 mm, E = 15.6 mm, L = 14.5 mm).

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab)	Collector	High-current main terminal; electrically connected to metal tab - requires insulated mounting in most applications
2	Gate	Control input; sensitive to ESD and Miller coupling - requires low-inductance gate drive and proper RG selection (10 Ω typical)
3	Emitter	Power return and signal reference; common node for gate drive return and current sensing in half-bridge layouts

Key Features

Feature	Design Value
Ultra-fast soft-recovery diode	40 ns t_rr, 2.5 A I_RRM, and 50 nC Q_rr at 25 °C reduce snubber stress and EMI in hard-switched converters
Low C_RES/C_IES ratio	0.025 ratio (52/2080 pF) minimizes gate voltage displacement during high dV/dt transitions, preventing spurious turn-on
Power MESH™ IGBT die	Optimized cell layout achieves 2.1 V V_CE(sat) and 102 nC Q_g simultaneously - balancing conduction and switching loss
150 °C max junction temperature	Enables operation in sealed industrial enclosures without forced air, supporting extended thermal derating curves up to 125 °C case

Applications

Motor Drive Inverter

Uninterruptible Power Supply

Use Scenario: Three-phase 3–5 kW servo inverter operating at 16 kHz PWM frequency with active vector control.

IC Role / Device Role / Timing Role: Main switching device in upper/lower leg of each phase bridge; handles bidirectional current via integrated diode during freewheeling.

Use Value: Soft diode recovery eliminates need for external snubbers, reducing BOM count and board area by 12 % versus discrete IGBT+diode solutions.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified 400 VDC bus with <10 ms transfer time.

IC Role / Device Role / Timing Role: Inverter-stage switch in full-bridge topology; synchronized with DSP-controlled dead-time management to prevent shoot-through.

Use Value: 1640 A/µs di/dt capability ensures fast current commutation during load transients, maintaining output regulation within ±1 % during 100 % step load changes.

Resonant SMPS

PFC Front-End

Use Scenario: 1.5 kW LLC resonant converter for telecom rectifier, operating at 300–500 kHz variable frequency.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge configuration; conducts during zero-voltage switching (ZVS) intervals and blocks during resonant tank reset.

Use Value: Low C_RES (52 pF) reduces capacitive turn-off loss, improving ZVS boundary extension and enabling >94 % peak efficiency at 400 V input.

Use Scenario: Active boost PFC stage in 2 kW server PSU, operating in continuous conduction mode (CCM) at 65 kHz.

IC Role / Device Role / Timing Role: Boost switch handling 10 A RMS input current; integrated diode recovers during switch-off while sustaining reverse voltage.

Use Value: 305 µJ E_on (including diode recovery) at 25 °C lowers total switching loss by 22 % compared to standard-speed IGBTs, directly improving THD compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	Higher V_CE(sat) (2.4 V typ), higher Q_g (130 nC), no integrated diode	Requires external ultra-fast diode; less suitable for space-constrained half-bridge modules	Preferred where discrete diode selection enables custom recovery tuning or higher temperature operation (>125 °C)
Infineon IKW30N60T	Lower t_rr (25 ns), higher C_RES (110 pF), same TO-247 package	Higher Miller capacitance increases gate drive power and susceptibility to dV/dt noise in high-density layouts	Chosen when fastest possible diode recovery is prioritized over gate drive simplicity and EMI robustness

Compared with IXGN30N60B3 and IKW30N60T, STGW30NC60WD uniquely combines integrated soft diode, low C_RES/C_IES, and proven thermal robustness - making it optimal for compact, high-reliability industrial inverters where layout parasitics and thermal margins are constrained.

Availability

STGW30NC60WD is available at Aetrix Electronics and suitable for high-frequency motor controls, uninterruptible power supplies, and resonant SMPS requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGW30NC60WD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's Power MESH™ IGBT family, engineered specifically for high-efficiency, high-frequency power conversion systems where simultaneous optimization of switching speed, conduction loss, and ruggedness is essential.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 100 °C case temperature?

The datasheet specifies t_d(off) = 151 ns and t_f = 38 ns at T_C = 125 °C with R_G = 10 Ω. Increasing R_G beyond 15 Ω risks exceeding safe SOA limits during turn-off under high-current, high-temperature conditions. ST recommends 8–12 Ω for balanced speed and robustness across the full industrial temperature range.

Does the integrated diode support bidirectional current in synchronous rectification topologies?

No - the antiparallel diode is unidirectional and optimized for freewheeling, not active rectification. Its 2.6 V forward voltage at 20 A and soft recovery profile are designed for passive conduction during IGBT off-time, not gate-controlled synchronous switching. Use discrete MOSFETs for true synchronous rectification.

Can STGW30NC60WD replace STGW40NC60WD in an existing 40 A design?

No - STGW40NC60WD is rated for 40 A continuous at 100 °C, while STGW30NC60WD is rated for 30 A at the same temperature. Substitution would exceed thermal limits under identical operating conditions. Derating to ≤22 A average current would be required, compromising system power density and potentially violating safety margins.

Is the TO-247 package pinout compatible with industry-standard heatsink mounting hardware?

Yes - the TO-247 outline matches JEDEC MS-001AC mechanical specifications. Mounting hole center-to-center distance is 18.5 mm (L2), flange thickness is 3.7–4.3 mm (L1), and tab diameter is Ø3.6 mm (øP), ensuring compatibility with standard TO-247 insulating washers, shoulder screws, and extruded aluminum heatsinks used in industrial power modules.

STGW30NC60WD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: 200 W

Switching Energy:: 305µJ (on), 181µJ (off)

Input Type:: Standard

Gate Charge:: 102 nC

Td (on/off) @ 25°C:: 29.5ns/118ns

Test Condition:: 390V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: 40 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW30NC60WD FAQ

1.How can I place an order for STGW30NC60WD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW30NC60WD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW30NC60WD reliable?

The price and inventory of STGW30NC60WD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW30NC60WD is usually 5 days.

3.What payment methods are accepted for STGW30NC60WD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW30NC60WD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW30NC60WD?

STGW30NC60WD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW30NC60WD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW30NC60WD?

For technical support, including STGW30NC60WD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW30NC60WD requirements.

6.How does Aetrix verify that STGW30NC60WD is sourced from the original manufacturer or authorized distributors?

All STGW30NC60WD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW30NC60WD meets industry standards.

7.What is the process for return or replacement of STGW30NC60WD?

All STGW30NC60WD units undergo pre-shipment inspection (PSI). If there is an issue with STGW30NC60WD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW30NC60WD part is unused and in its original packaging.

Return procedure for STGW30NC60WD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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