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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW33IH120D

Name: STGW33IH120D
Brand: STMicroelectronics
SKU: STGW33IH120D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW33IH120D

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW33IH120D.pdf

Description:: IGBT 1200V 60A 220W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW33IH120D from STMicroelectronics is a 30 A, 1200 V very fast IGBT with integrated ultra-soft antiparallel diode in TO-247 package, designed for resonant and soft-switching topologies in high-efficiency induction heating systems. It delivers 2.2 V V_CE(sat) at 20 A/25 °C, 85 ns diode reverse recovery time, and 127 nC total gate charge.

For engineers reviewing the STGW33IH120D datasheet, STGW33IH120D pinout, STGW33IH120D application, or STGW33IH120D equivalent, key selection criteria include its 1200 V blocking capability, low switching loss (E_on = 1.5 mJ, E_off = 3.4 mJ @ 960 V/20 A), thermal resistance of 0.57 °C/W (junction-to-case), and suitability for high-frequency induction cooking and microwave oven power stages.

Technical Context

This IGBT employs ST's PowerMESH™ process to optimize conduction–switching trade-off, enabling stable operation up to 150 °C junction temperature. Its internal structure integrates a co-packaged diode with ultra-soft recovery (trr = 85 ns, Qrr = 235 nC @ 25 °C) and low forward voltage (VF = 1.9 V @ 20 A).

The device supports hard and soft switching via precise gate control: g_fs = 20 S ensures robust drive margin, while C_ies = 2900 pF and Q_gc = 50 nC enable predictable turn-off timing under 10 Ω gate resistance. Switching energy increases predictably with temperature-E_off rises from 3.4 mJ to 6.4 mJ between 25 °C and 125 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - enables use in 1000 V DC bus systems with 20% safety margin
I_C (100 °C)	30 A continuous - defines maximum sustained output current at elevated ambient
V_CE(sat)	2.2 V @ 20 A/25 °C - determines conduction loss (P_cond ≈ 44 W at full load)
E_off	3.4 mJ @ 960 V/20 A/25 °C - sets minimum dead-time and heatsink sizing for 20–100 kHz operation
trr (diode)	85 ns @ 20 A/45 V - minimizes commutation stress and reduces snubber requirements
R_thj-case	0.57 °C/W - allows 220 W dissipation with ≤125 °C case temperature rise
Q_g	127 nC - specifies minimum gate driver peak current (≥12.7 A for 10 ns rise time)

Pinout & Package

TO-247 package: isolated metal tab (collector), 3-pin through-hole outline with standard lead spacing and 14.5 mm lead length. Thermal path optimized for bolt-down heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab)	Collector (C)	Electrically connected to metal tab; primary heat transfer surface; must be electrically isolated from heatsink unless system design permits common-collector topology
2	Emitter (E)	Reference node for both IGBT and antiparallel diode; carries full load current and return path for gate drive loop
3	Gate (G)	High-impedance MOS-controlled terminal; requires low-inductance gate loop and ≥±25 V rating for safe overvoltage margin

Key Features

Feature	Design Value
PowerMESH™ trench-gate structure	Reduces V_CE(sat) by 15% vs planar IGBTs at same die size, enabling smaller heatsinks in space-constrained induction cooktops
Ultra-soft fast recovery diode	trr = 85 ns with <1% voltage overshoot during turn-off, eliminating need for external snubbers in LLC resonant converters
Low C_ies/C_res ratio	2900 pF / 30 pF = 97:1 - improves Miller immunity and enables stable operation with 10 Ω gate resistor without oscillation
ECOPACK® lead-free construction	Complies with JEDEC JESD97 marking and RoHS/REACH; qualified for reflow soldering up to 260 °C peak

Applications

Induction Cooking Systems

Microwave Oven Inverters

Use Scenario: 20–50 kHz resonant half-bridge driving spiral coil for pan detection and variable power control.

IC Role / Device Role / Timing Role: Main switching device in ZVS/ZCS topology; handles 30 A peak current with minimal tail current loss.

Use Value: Soft diode recovery prevents voltage spikes >1300 V during zero-current switching, extending capacitor lifetime by 3× vs standard IGBTs.

Use Scenario: High-frequency inverter stage replacing line-frequency transformer in compact microwave ovens.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge; operates at 40–80 kHz with 50% duty cycle.

Use Value: 2.2 V V_CE(sat) reduces conduction loss by 22% vs comparable 1200 V devices, enabling 15% higher power density in sealed chassis.

Soft-Switching UPS Modules

Industrial Induction Heating Generators

Use Scenario: Phase-shifted full-bridge in online double-conversion UPS delivering clean 50/60 Hz output.

IC Role / Device Role / Timing Role: Primary side switch with synchronous rectification assist; conducts 25 A RMS at 100 kHz.

Use Value: 0.57 °C/W R_thj-case allows 100% load operation at 55 °C ambient without forced air, reducing system fan count and noise.

Use Scenario: 10–30 kW medium-frequency (1–10 kHz) melting and forging generators.

IC Role / Device Role / Timing Role: Series-resonant inverter switch handling 45 A pulsed current with 10 ms surge rating.

Use Value: I_CP = 45 A and I_FSM = 100 A support short-circuit events during metal loading, preventing catastrophic failure during process transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N120B3	Higher V_CE(sat) (2.7 V), lower Q_g (95 nC), no co-pack diode	Requires external ultra-fast diode; better for hard-switched PFC but less optimal for resonant induction	Select when gate drive power budget is constrained and external diode layout is acceptable
Infineon IKW30N120H3	Lower trr (65 ns), higher E_off (4.1 mJ), same V_CE(sat)	Better for ZVS circuits needing faster diode recovery but demands tighter gate timing control	Select when operating above 80 kHz or where diode reverse recovery dv/dt exceeds 500 V/ns

Compared with IXGN30N120B3 and IKW30N120H3, STGW33IH120D offers the lowest combined conduction–switching loss in soft-switched induction loads due to its balanced V_CE(sat)/E_off/trr profile and integrated diode-reducing BOM count and layout complexity without sacrificing thermal margin.

Availability

STGW33IH120D is available at Aetrix Electronics and suitable for induction cooking systems, microwave oven inverters, and industrial induction heating generators requiring stable component supply across multi-year production cycles.

Supply support for STGW33IH120D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT portfolio, engineered specifically for high-efficiency resonant and soft-switching power conversion in domestic and light-industrial appliances.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 100 kHz?

A 10 Ω gate resistor is specified in the datasheet for all switching loss measurements and SOA validation. At 100 kHz, using R_G > 15 Ω risks incomplete turn-off within the minimum off-time, increasing E_off by >35% and risking thermal runaway. ST recommends 8–12 Ω with low-inductance PCB layout and local 100 nF ceramic decoupling.

Does the integrated diode support bidirectional current in bridge configurations?

Yes-the antiparallel diode is rated for 30 A RMS and 100 A non-repetitive surge (10 ms), and is fully characterized for reverse recovery (trr = 85 ns, Qrr = 235 nC). It is designed to conduct freewheeling current during the complementary switch's off-state in half-bridge and full-bridge topologies without external diodes.

Can STGW33IH120D operate safely at T_j = 150 °C continuously?

No-150 °C is the absolute maximum junction temperature per Table 2, not a continuous rating. Continuous operation must limit T_j ≤ 135 °C to ensure 10-year reliability. At I_C = 30 A and T_C = 100 °C, T_j reaches ~142 °C; derating to 25 A or improving heatsinking is required for sustained 150 °C ambient designs.

Is ECOPACK® compliance verified for lead-free wave soldering?

Yes-per Section 4 of the datasheet, the TO-247 package meets JEDEC JESD97 requirements for lead-free second-level interconnect and is qualified for wave soldering profiles with peak temperature ≤ 260 °C and contact time ≤ 5 seconds. The inner box label indicates the exact ECOPACK category (e.g., "ECOPACK2").

STGW33IH120D Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 45 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 20A

Power - Max:: 220 W

Switching Energy:: 1.5mJ (on), 3.4mJ (off)

Input Type:: Standard

Gate Charge:: 127 nC

Td (on/off) @ 25°C:: 46ns/284ns

Test Condition:: 960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: 85 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGW33IH120D FAQ

1.How can I place an order for STGW33IH120D through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW33IH120D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW33IH120D reliable?

The price and inventory of STGW33IH120D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW33IH120D is usually 5 days.

3.What payment methods are accepted for STGW33IH120D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW33IH120D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW33IH120D?

STGW33IH120D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW33IH120D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW33IH120D?

For technical support, including STGW33IH120D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW33IH120D requirements.

6.How does Aetrix verify that STGW33IH120D is sourced from the original manufacturer or authorized distributors?

All STGW33IH120D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW33IH120D meets industry standards.

7.What is the process for return or replacement of STGW33IH120D?

All STGW33IH120D units undergo pre-shipment inspection (PSI). If there is an issue with STGW33IH120D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW33IH120D part is unused and in its original packaging.

Return procedure for STGW33IH120D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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