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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW35HF60W

Name: STGW35HF60W
Brand: STMicroelectronics
SKU: STGW35HF60W
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW35HF60W

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW35HF60W.pdf

Description:: IGBT 600V 60A 200W TO247

Quantity:: RFQ Add To RFQ list

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Inventory:8,186

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Product details

Overview

STGW35HF60W from STMicroelectronics is a 35 A, 600 V ultrafast IGBT in TO-247 package, designed for high-frequency switching (>100 kHz) with minimal tail current and improved E_off stability over temperature. It delivers 2.5 V V_CE(sat) at 20 A/25 °C, 0.63 °C/W junction-to-case thermal resistance, and 140 nC total gate charge - enabling efficient operation in welding inverters and PFC stages.

For engineers reviewing the STGW35HF60W datasheet, STGW35HF60W pinout, STGW35HF60W application, or STGW35HF60W equivalent, key selection criteria include its elevated-temperature E_off consistency, low conduction loss profile, co-pack diode compatibility (when used), and TO-247 thermal performance for forced-air or heatsink-mounted high-power converters.

Technical Context

This IGBT employs ST's planar technology to tightly control switching energy variation across temperature - E_off rises only to 350 µJ at 125 °C (vs. 185 µJ at 25 °C) under 400 V, 20 A, R_G = 10 Ω conditions. Its V_GE(th) ranges 3.75–5.75 V and remains stable up to 150 °C junction temperature.

The device features low C_ies (2400 pF), C_oes (235 pF), and C_res (50 pF) at 25 V, supporting fast, controllable turn-on/off transitions. Switching times are specified as t_d(off) = 175 ns (25 °C) / 225 ns (125 °C), with dV/dt capability validated per RBSOA limits up to 150 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands 600 V collector-emitter blocking voltage with gate open; suitable for 400 V DC bus systems with margin.
I_C (T_C = 100 °C)	35 A - Continuous collector current rating at 100 °C case temperature; defines usable output power in thermally constrained designs.
V_CE(sat)	2.5 V max @ 20 A, 25 °C - Low saturation voltage reduces conduction loss; drops to 1.65 V at 125 °C, improving thermal stability.
E_off	350 µJ @ 400 V, 20 A, 125 °C - Measured turn-off energy enables accurate thermal modeling for >100 kHz operation without excessive heatsinking.
R_thj-case	0.63 °C/W - Junction-to-case thermal resistance in TO-247 package; supports ~317 W max dissipation at ΔT = 200 K before exceeding T_j = 150 °C.
Q_g	140 nC @ V_GE = 15 V - Total gate charge determines driver strength requirement; enables precise gate drive design for <200 ns switching transitions.
t_d(off)	225 ns @ 125 °C - Turn-off delay time under worst-case thermal condition; critical for dead-time calculation in half-bridge topologies.

Pinout & Package

STGW35HF60W uses the industry-standard TO-247 package with isolated mounting flange (V_ISO = 2500 V RMS). The package provides low thermal resistance (0.63 °C/W) and mechanical robustness for high-power industrial mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main high-side current path input	Connected to DC bus positive; carries full load current during conduction; electrically tied to metal tab in standard mounting.
2 (Gate)	Control terminal for MOS-controlled IGBT channel	Requires 15 V drive for full enhancement; ±20 V absolute max rating; sensitive to ringing due to 140 nC Q_g.
3 (Emitter)	Current return path and reference node	Serves as power ground reference for gate drive; must be low-inductance layout to avoid shoot-through during switching.

Key Features

Feature	Design Value
Ultrafast switching with minimized tail current	Reduces E_off dependency on temperature - enables stable 100–200 kHz operation without derating in welding/PFC circuits.
Enhanced E_off stability over temperature	E_off increases only 89% from 25 °C to 125 °C (185 → 350 µJ), versus >200% typical for older IGBTs - simplifies thermal design.
Low V_CE(sat) with negative tempco	1.65 V @ 125 °C (vs. 2.5 V @ 25 °C) - improves current sharing in parallel configurations and reduces thermal runaway risk.
High V_ISO isolation	2500 V RMS insulation between leads and heat sink - eliminates need for insulating pads in grounded-sink applications.
ECOPACK® compliant packaging	Meets RoHS and halogen-free requirements per ST's environmental grade definitions - supports industrial and commercial compliance programs.

Applications

Welding Inverters

High-Frequency AC-DC Converters

Use Scenario: Primary-side switching in 15–30 kHz resonant or hard-switched inverter welders delivering 200–500 A output.

IC Role / Device Role / Timing Role: Main switching device in full-bridge topology; handles 400 V DC bus with peak currents up to 150 A pulsed.

Use Value: Minimal tail current and stable E_off ensure consistent arc initiation and reduced thermal stress during duty-cycle bursts.

Use Scenario: Output stage of 100–200 kHz isolated DC-DC converters for telecom or server PSUs.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge; operates with synchronous rectification and ZVS-assisted turn-on.

Use Value: Low C_res (50 pF) and controlled dV/dt enable reliable ZVS across line/load range without snubber overhead.

Active Power Factor Correction

Induction Heating Drivers

Use Scenario: Boost switch in 3-phase 11 kW industrial PFC front-end operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost transistor handling 60 A peak inductor current with 600 V blocking.

Use Value: 0.63 °C/W R_thj-case and 35 A continuous rating at 100 °C allow compact heatsink design without forced air.

Use Scenario: Half-bridge switching element in 20–80 kHz solid-state induction heating systems for metal hardening.

IC Role / Device Role / Timing Role: Resonant tank switch driving L-C load; subjected to repetitive hard commutation and high di/dt.

Use Value: Tight E_off variation ensures repeatable zero-current switching timing and prevents device overstress during frequency sweeps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGH35N60B3	Higher V_CE(sat) (2.7 V typ), higher E_off (480 µJ @ 125 °C), TO-247 package, no V_ISO rating	Less suited for >150 kHz operation due to higher switching losses and lack of isolation rating	Prefer when cost sensitivity outweighs thermal efficiency and isolation requirements
Infineon IKP35N60T	Lower Q_g (95 nC), higher C_res (100 pF), same V_CES/I_C, TO-247 package, 2500 V V_ISO	Better gate drive efficiency but slower dV/dt control; requires tighter gate loop layout to avoid oscillation	Prefer when gate drive power budget is constrained and layout allows strict EMI control

Compared with IXGH35N60B3 and IKP35N60T, STGW35HF60W offers superior E_off temperature stability and lower conduction loss at elevated junction temperatures - making it optimal for thermally demanding, high-reliability welding and PFC applications where thermal margin is limited.

Availability

STGW35HF60W is available at Aetrix Electronics and suitable for welding inverters, high-frequency AC-DC converters, and active power factor correction systems requiring stable component supply, long-lifecycle support, and industrial-grade reliability.

Supply support for STGW35HF60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's Ultrafast IGBT product line, engineered specifically for high-frequency switching power conversion where low tail current, tight E_off variation, and thermal robustness are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 10 Ω for all switching characterization curves. Using R_G > 15 Ω increases t_d(off) beyond 250 ns at 125 °C and risks incomplete turn-off during high-duty cycles. For 100–200 kHz operation, 8–12 Ω is optimal to balance E_off, dV/dt, and gate driver loss.

Does STGW35HF60W include an integrated anti-parallel diode?

No - STGW35HF60W is a standalone IGBT in TO-247 package without an integrated freewheeling diode. External ultrafast diodes (e.g., STTH30L06D) must be used in bridge configurations. Co-pack diode variants exist under different part numbers (e.g., STGW35HF60DL).

Can this IGBT be paralleled for higher current capacity?

Yes - its negative V_CE(sat) temperature coefficient (1.65 V at 125 °C vs. 2.5 V at 25 °C) enables natural current sharing. Parallel operation requires matched gate drive paths, identical PCB trace lengths, and shared heatsink mounting to maintain thermal symmetry.

What is the safe operating area (SOA) limitation at 150 °C junction temperature?

Per Figure 13, the RBSOA at T_j = 150 °C limits single-pulse operation to ≤100 A at 400 V for ≤10 µs. For repetitive operation, the 35 A continuous rating at T_C = 100 °C governs design - exceeding this requires active cooling or derating based on measured R_thj-case.

STGW35HF60W Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: 200 W

Switching Energy:: 290µJ (on), 185µJ (off)

Input Type:: Standard

Gate Charge:: 140 nC

Td (on/off) @ 25°C:: 30ns/175ns

Test Condition:: 400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW35HF60W FAQ

1.How can I place an order for STGW35HF60W through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW35HF60W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW35HF60W reliable?

The price and inventory of STGW35HF60W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW35HF60W is usually 5 days.

3.What payment methods are accepted for STGW35HF60W?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW35HF60W transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW35HF60W?

STGW35HF60W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW35HF60W order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW35HF60W?

For technical support, including STGW35HF60W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW35HF60W requirements.

6.How does Aetrix verify that STGW35HF60W is sourced from the original manufacturer or authorized distributors?

All STGW35HF60W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW35HF60W meets industry standards.

7.What is the process for return or replacement of STGW35HF60W?

All STGW35HF60W units undergo pre-shipment inspection (PSI). If there is an issue with STGW35HF60W, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW35HF60W part is unused and in its original packaging.

Return procedure for STGW35HF60W:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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