Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STGW35NB60S

Part No.:
STGW35NB60S
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixSTGW35NB60S.pdf
Description:
IGBT 600V 70A 200W TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,248

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STGW35NB60S from STMicroelectronics is an N-channel 600V, 35A (TC=100°C) PowerMESH™ IGBT in TO-247 package, featuring VCE(sat) ≤ 1.7 V at 20 A/125°C, low input capacitance (Cies = 1820 pF), and high pulsed current capability (ICM = 250 A). It serves as a main switching device in high-voltage AC-DC converters and industrial motor drives.

For engineers reviewing the STGW35NB60S datasheet, STGW35NB60S pinout, STGW35NB60S application, or STGW35NB60S equivalent, key selection criteria include VCE(sat) stability over temperature, gate charge (Qg = 83 nC), thermal resistance (Rthj-case = 0.625 °C/W), and turn-off SOA compliance at 480 V clamp.

Technical Context

This IGBT employs ST's patented strip-layout PowerMESH™ structure to minimize conduction loss while maintaining robust short-circuit ruggedness. Its gate threshold voltage (VGE(th) = 2.5–5 V) enables reliable drive with standard 15 V gate drivers, and its low Cres/Cies ratio (27/1820 pF) supports fast, low-loss switching in hard-switched topologies.

The device is characterized for inductive-load switching at VCC = 480 V and IC = 20 A, delivering td(off) = 1.1 µs and Eoff = 7.4 mJ at 25°C - values that scale predictably to 11.5 mJ at Tj = 125°C, supporting thermal-aware design in compact heatsink layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - Withstands full mains-derived DC bus voltages up to 400 VAC RMS with margin for transients.
VCE(sat) max1.7 V @ 20 A, 125°C - Enables <1.7 W conduction loss per device at rated continuous current, reducing heatsink size.
IC (100°C)35 A - Sustains continuous motor-phase or welding-output current without derating below 100°C case temperature.
Qg83 nC - Determines gate driver power requirement (~1.25 mW average at 20 kHz, 15 V swing) and influences switching speed control.
Rthj-case0.625 °C/W - Allows direct mounting to heatsink with ≤125°C junction rise at 200 W dissipation, enabling passive-cooled designs.
Eoff7.4 mJ @ 25°C - Quantifies energy dissipated during turn-off under standard test conditions; critical for snubberless operation.

Pinout & Package

TO-247 package: 3-terminal through-hole outline with isolated tab (collector), vertical lead spacing, and JEDEC-standard mechanical dimensions (L = 14.2–14.8 mm, D = 19.85–20.15 mm). Tab is electrically connected to collector.

Pin/TerminalCircuit RoleDesign Meaning
Collector (Tab)Main high-side current pathElectrically tied to metal tab; requires insulated mounting when referenced to non-ground potential.
GateControl electrodeHigh-impedance MOS-controlled input; requires 15 V drive for full saturation and 100 nA leakage at ±20 V.
EmitterCurrent return pathLow-inductance emitter connection; critical for stable gate drive referencing and noise immunity in high-di/dt circuits.

Key Features

FeatureDesign Value
PowerMESH™ strip layoutReduces VCE(sat) by 15% vs. conventional planar IGBTs at same die area, improving efficiency in 10–20 kHz inverters.
Low Cres/Cies ratio27/1820 pF - Minimizes Miller-induced gate oscillation and enables stable operation with moderate gate resistors (e.g., 100 Ω).
Turn-off SOA complianceRated for 80 A minimum current at Vclamp = 480 V and Tj = 125°C - Supports reliable short-circuit protection without external desaturation sensing.
ECOPACK® lead-free constructionMeets RoHS Directive 2011/65/EU and JEDEC JESD97 marking requirements - suitable for environmentally compliant industrial manufacturing.

Applications

Light DimmerHID Lamp Ballast

Use Scenario: Phase-angle dimming of incandescent and halogen lamps in commercial lighting systems.

IC Role / Device Role / Timing Role: Main AC line switch controlling conduction angle via zero-crossing synchronized gate triggering.

Use Value: Low VCE(sat) minimizes heat generation during partial-conduction cycles, extending dimmer lifetime and reducing thermal management cost.

Use Scenario: High-intensity discharge lamp ignition and regulation in street lighting and industrial fixtures.

IC Role / Device Role / Timing Role: High-voltage half-bridge switch generating 100–500 kHz square-wave output for electronic ballast resonant tank.

Use Value: 600 V rating and 250 A pulsed current support enable reliable lamp strike and sustained arc operation under cold-start conditions.

Industrial Welding InverterMotor Control Drive

Use Scenario: Primary-side DC-link switching in IGBT-based inverter welders operating at 15–30 kHz.

IC Role / Device Role / Timing Role: Fast-switching power stage element converting rectified DC into high-frequency AC for transformer isolation and current control.

Use Value: 7.4 mJ turn-off energy and 0.625 °C/W thermal resistance allow stable 100% duty-cycle operation at 20 kHz with forced-air cooling.

Use Scenario: Three-phase inverter leg in HVAC compressors and pump drives (0.75–2.2 kW range).

IC Role / Device Role / Timing Role: Voltage-source inverter switch delivering PWM-modulated phase currents to PMSM/induction motors.

Use Value: 35 A continuous current at 100°C case temperature supports 1.5× motor peak current without derating, simplifying BOM consolidation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGH35N60B3VCE(sat) = 1.8 V @ 25 A/125°C; Qg = 95 nC; Rthj-case = 0.65 °C/WSlightly higher conduction loss and gate drive demand; identical 600 V/35 A ratingPreferred where legacy IXYS footprint compatibility is required; verify gate driver slew rate margin.
Infineon IKP35N60TVCE(sat) = 1.6 V @ 20 A/125°C; Qg = 72 nC; Rthj-case = 0.55 °C/WLower VCE(sat) and gate charge; tighter thermal resistance enables higher power densityRecommended for new designs prioritizing efficiency and thermal headroom; requires updated gate resistor tuning.

Compared with IXGH35N60B3 and IKP35N60T, the STGW35NB60S offers balanced trade-offs: lower gate charge than IXYS but higher than Infineon, and mid-range thermal resistance - making it suitable for cost-sensitive industrial drives where proven field reliability outweighs marginal efficiency gains.

Availability

STGW35NB60S is available at Aetrix Electronics and suitable for light dimmer, HID lamp ballast, and industrial welding inverter applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGW35NB60S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The PowerMESH™ IGBT product line targets high-efficiency, medium-frequency (10–50 kHz) power conversion in industrial motor drives, lighting, and welding equipment - emphasizing ruggedness, low conduction loss, and ease of gate drive integration.

FAQ

Is STGW35NB60S still in active production?

No - STGW35NB60S is marked as Obsolete Product(s) in ST's official documentation (Rev 1, March 2007). It remains available through authorized distributors and Aetrix Electronics' legacy inventory, with full traceability and extended lifecycle support for existing designs.

What is the maximum gate-emitter voltage rating?

The absolute maximum VGE is ±20 V, with gate-emitter leakage current specified as ±100 nA at ±20 V and VCE = 0. Exceeding this rating risks permanent gate oxide damage; recommended gate drive is +15 V / –5 V to ensure safe turn-on and fast, low-loss turn-off.

Can STGW35NB60S be used in parallel configurations?

Yes - its positive VCE(sat) temperature coefficient (verified in Figure 4 of datasheet) enables current sharing across paralleled devices. Designers must match gate drive loop inductance and use individual gate resistors (e.g., 10–22 Ω) to suppress dynamic imbalance during switching transitions.

Does STGW35NB60S require a negative gate voltage for reliable turn-off?

No - it operates reliably with 0 V gate turn-off under typical inductive load conditions. However, applying –5 V improves noise immunity and reduces risk of spurious turn-on in high-dv/dt environments (e.g., >500 V/µs); the device's VGE(th) min of 2.5 V provides inherent margin against false triggering.

STGW35NB60S Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
70 A
Current - Collector Pulsed (Icm):
250 A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 20A
Power - Max:
200 W
Switching Energy:
840µJ (on), 7.4mJ (off)
Input Type:
Standard
Gate Charge:
83 nC
Td (on/off) @ 25°C:
92ns/1.1µs
Test Condition:
480V, 20A, 100Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

STGW35NB60S FAQ

1.How can I place an order for STGW35NB60S through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW35NB60S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW35NB60S reliable?

The price and inventory of STGW35NB60S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW35NB60S is usually 5 days.

3.What payment methods are accepted for STGW35NB60S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW35NB60S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW35NB60S?

STGW35NB60S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW35NB60S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW35NB60S?

For technical support, including STGW35NB60S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW35NB60S requirements.

6.How does Aetrix verify that STGW35NB60S is sourced from the original manufacturer or authorized distributors?

All STGW35NB60S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW35NB60S meets industry standards.

7.What is the process for return or replacement of STGW35NB60S?

All STGW35NB60S units undergo pre-shipment inspection (PSI). If there is an issue with STGW35NB60S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW35NB60S part is unused and in its original packaging.

Return procedure for STGW35NB60S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGW35NB60S Tags

  • STGW35NB60S
  • STGW35NB60S PDF
  • STGW35NB60S Datasheet
  • STGW35NB60S Specifications
  • STGW35NB60S Images
  • STMicroelectronics
  • STMicroelectronics STGW35NB60S
  • Buy STGW35NB60S
  • STGW35NB60S Price
  • STGW35NB60S Distributor
  • STGW35NB60S Supplier
  • STGW35NB60S Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER