STMicroelectronics STGW35NC120HD

Overview

STGW35NC120HD from STMicroelectronics is a 32 A, 1200 V very fast IGBT co-packaged with an ultrafast freewheeling diode in TO-247 long leads package. It features low V_CE(sat) (2.2 V typ. at 20 A, 25 °C), low gate charge (110 nC), and optimized switching performance for soft-switching topologies in high-frequency power conversion.

For engineers reviewing the STGW35NC120HD datasheet, STGW35NC120HD pinout, STGW35NC120HD application, or STGW35NC120HD equivalent, key selection criteria include its 1200 V blocking capability, 32 A continuous current rating at T_C = 100 °C, 152 ns reverse recovery time of the integrated diode, and suitability for induction heating and UPS inverters requiring low conduction + switching loss trade-offs.

Technical Context

This IGBT employs ST's PowerMESH™ process to achieve simultaneous optimization of on-state voltage (V_CE(sat) = 2.2 V typ. @ 20 A, 25 °C) and switching speed (t_d(off) = 275 ns typ., t_f = 312 ns typ. at 25 °C). Its co-packaged ultrafast diode delivers 152 ns trr and 722 nC Q_rr at 125 °C, enabling efficient commutation in resonant and soft-switching circuits.

The device supports ±25 V gate-emitter voltage, exhibits 14 S forward transconductance (g_fs), and maintains stable operation across –55 to 150 °C junction temperature range. Thermal resistance junction-to-case is 0.53 °C/W for the IGBT and 1.5 °C/W for the diode-critical for thermal design in high-power density modules.

Key Specifications

Pinout & Package

STGW35NC120HD is housed in a TO-247 long leads package with isolated collector tab, standard three-terminal configuration, and creepage/clearance compliant with industrial safety requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN35N120B3 and IKW30N120H3, STGW35NC120HD uniquely integrates a matched ultrafast diode with 152 ns trr-reducing bill-of-materials count and improving layout reproducibility in space-constrained induction heating and UPS designs.

Availability

STGW35NC120HD is available at Aetrix Electronics and suitable for induction heating systems, high-frequency UPS inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for STGW35NC120HD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in resonant and soft-switching applications where low conduction + switching loss synergy is critical.

FAQ

What is the maximum gate-emitter voltage rating for STGW35NC120HD?

The absolute maximum gate-emitter voltage is ±25 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller effect in high-di/dt environments. Gate drive circuits must include clamping and low-inductance layout to maintain this limit.

Does STGW35NC120HD require an external freewheeling diode?

No. STGW35NC120HD integrates an ultrafast freewheeling diode co-packaged in the same TO-247 housing. This diode has 152 ns reverse recovery time and 722 nC Q_rr at 125 °C, eliminating need for external anti-parallel diodes in half-bridge or inverter leg configurations.

How does thermal resistance differ between the IGBT and diode sections?

The IGBT section has R_thj-case = 0.53 °C/W, while the co-packaged diode has R_thj-case = 1.5 °C/W. This asymmetry means the diode reaches higher junction temperature under identical power dissipation-requiring thermal design that accounts for separate thermal paths or derating based on diode conduction duty cycle.

Can STGW35NC120HD be used in hard-switching applications?

Yes, but with careful attention to snubber design and gate resistance selection. Its 312 ns current fall time and 90 ns off-voltage rise time generate significant dV/dt and di/dt stress. For reliable hard-switching at >10 kHz, RG must be tuned (typically 10–22 Ω) and RC snubbers applied to limit voltage overshoot to <10% above V_CES.