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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW35NC60WD

Name: STGW35NC60WD
Brand: STMicroelectronics
SKU: STGW35NC60WD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW35NC60WD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW35NC60WD.pdf

Description:: IGBT 600V 70A 260W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW35NC60WD from STMicroelectronics is a 40 A, 600 V ultra-fast IGBT with integrated soft-recovery antiparallel diode in TO-247 long leads package. It delivers 2.2 V V_CE(sat) at 20 A/25 °C, 102 nC total gate charge, and 40 ns typical reverse recovery time (T_rr) at 25 °C - optimized for high-frequency motor drives, UPS inverters, and resonant SMPS topologies.

For engineers reviewing the STGW35NC60WD datasheet, STGW35NC60WD pinout, STGW35NC60WD application, or STGW35NC60WD equivalent, key selection criteria include its low C_RES/C_IES ratio (52/2080 pF), 0.48 °C/W junction-to-case thermal resistance, and verified operation up to 150 °C junction temperature in hard-switched and ZVS/ZCS configurations.

Technical Context

This IGBT employs ST's Power MESH™ process to balance conduction loss and switching speed. Its internal structure integrates a co-packaged ultra-soft fast recovery diode with 2.6 V forward voltage at 20 A and 40 ns T_rr at 25 °C, enabling zero-voltage switching without cross-conduction risk.

The device operates with ±20 V gate-emitter rating and exhibits 15 S transconductance (g_fs) at 15 V V_GE. Switching energy is characterized at 390 V V_CC, 20 A I_C, and 10 Ω gate resistance - yielding 305 µJ E_on and 181 µJ E_off at 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - maximum blocking voltage under zero gate bias; supports 400 V DC bus designs with 50% safety margin
I_C (100 °C)	40 A continuous - rated output current at case temperature of 100 °C for thermal design validation
V_CE(sat)	2.2 V @ 20 A, 25 °C - directly determines conduction loss (P_cond ≈ 44 W at full load)
Q_g	102 nC - defines gate drive power requirement and influences switching transition time
T_rr (diode)	40 ns @ 20 A, 25 °C - enables high-frequency operation (>100 kHz) with minimal tail current loss
R_thj-case (IGBT)	0.48 °C/W - allows 125 °C junction rise with only 60 W dissipation at case temperature of 65 °C
E_off	181 µJ @ 390 V, 20 A - quantifies turn-off loss independent of external snubber design

Pinout & Package

TO-247 long leads package with isolated mounting flange; 3-terminal configuration (Collector, Gate, Emitter) compliant with JEDEC TO-247-3 standard and ECOPACK® lead-free interconnect.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main high-side power terminal	Carries full load current to DC bus; electrically connected to metal tab for thermal path
2 (Gate)	Control input	High-impedance MOS-controlled terminal requiring 15 V nominal drive; sensitive to ESD
3 (Emitter)	Power return and reference node	Serves as common source for IGBT and antiparallel diode; critical for gate loop inductance minimization

Key Features

Feature	Design Value
Ultra-low C_RES/C_IES ratio	52/2080 pF = 0.025 - suppresses Miller-induced false turn-on during high dv/dt commutation
Soft-recovery antiparallel diode	T_rr = 40 ns, Q_rr = 50 nC @ 25 °C - reduces voltage overshoot and EMI in bridge-leg freewheeling
Power MESH™ cell architecture	Optimized trench-gate layout - achieves 2.2 V V_CE(sat) while maintaining 102 nC Q_g
ECOPACK® compliance	Lead-free second-level interconnect - meets RoHS Directive 2011/65/EU and JEDEC JESD97 marking requirements

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: 3-phase inverter stage in 5–15 kW HVAC compressors operating at 16–20 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switching element in six-pack IGBT module replacement; handles 40 A RMS output current with forced-air cooling.

Use Value: Low V_CE(sat) reduces conduction loss by ~18% vs. legacy 600 V IGBTs; soft diode prevents shoot-through during PWM dead-time transitions.

Use Scenario: Online double-conversion UPS output inverter delivering clean 50/60 Hz sine wave with <1% THD.

IC Role / Device Role / Timing Role: Final-stage power switch in H-bridge topology; synchronized with DSP-based SPWM control at 12 kHz.

Use Value: 40 ns diode T_rr eliminates need for external anti-parallel SiC Schottky; enables >95% system efficiency at full load.

Resonant SMPS

Active PFC Front-Ends

Use Scenario: LLC resonant converter in telecom rectifiers (48 V/50 A output) operating at 300–500 kHz variable frequency.

IC Role / Device Role / Timing Role: Primary-side switching device in half-bridge configuration; driven with zero-voltage switching (ZVS) envelope.

Use Value: Low C_RES minimizes capacitive turn-on loss; 0.48 °C/W R_thj-case sustains 125 °C junction temperature under 70 W peak dissipation.

Use Scenario: Boost PFC stage in industrial AC-DC power supplies (3 kW, 80 PLUS Titanium certified).

IC Role / Device Role / Timing Role: High-efficiency boost switch operating in continuous conduction mode (CCM) at 65–100 kHz.

Use Value: 15 S g_fs ensures stable gate control across line voltage range; integrated diode eliminates discrete diode placement error and parasitic inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN35N60B3	Higher V_CE(sat) (2.4 V), lower Q_g (75 nC), no co-pack diode	Requires external ultra-fast diode; better suited for discrete half-bridge layouts with separate diode optimization	Select when gate drive power budget is constrained and diode specs can be independently tailored
Infineon IKW30N60T	Lower I_C rating (30 A @ 100 °C), higher R_thj-case (0.65 °C/W), same V_CES	Thermal derating required above 85 °C case temperature; limited to lower-power PFC or auxiliary inverters	Select when footprint compatibility with TO-247-3 is mandatory but full 40 A capability is not needed

Compared with IXGN35N60B3 and IKW30N60T, STGW35NC60WD uniquely combines co-packaged soft diode, lowest V_CE(sat) among 40 A 600 V IGBTs, and industry-leading C_RES/C_IES ratio - making it optimal for space-constrained, high-frequency inverter designs where diode integration and Miller immunity are critical.

Availability

STGW35NC60WD is available at Aetrix Electronics and suitable for industrial motor controls, uninterruptible power supplies, and resonant SMPS requiring stable component supply and long-term production continuity.

Supply support for STGW35NC60WD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's Power MESH™ IGBT family, engineered specifically for high-efficiency, high-frequency power conversion systems where simultaneous optimization of conduction loss, switching loss, and diode recovery behavior is essential.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 100 kHz?

A 10 Ω gate resistor is specified in the datasheet for all switching loss measurements at 390 V and 20 A. For 100 kHz operation, ST recommends R_G ≤ 15 Ω to maintain td(off) ≤ 151 ns and prevent excessive E_off rise. Higher values increase switching losses and may cause thermal runaway under high ambient conditions.

Can STGW35NC60WD replace older STGW40V60DF in existing designs?

No - STGW40V60DF is a 650 V, 40 A field-stop IGBT with different V_CE(sat) (1.8 V), Q_g (130 nC), and diode characteristics (T_rr = 120 ns). While both use TO-247, STGW35NC60WD has lower voltage rating and faster diode, requiring revalidation of snubber networks and gate drive timing.

Is the integrated diode rated for repetitive surge current?

Yes - the antiparallel diode supports IFSM = 120 A (10 ms sinusoidal) per Table 2. This rating applies to the diode alone and is validated at T_j = 150 °C. It must be used within the SOA defined in Figure 15, especially under high di/dt conditions.

Does the TO-247 long leads variant require different PCB layout rules than standard TO-247?

Yes - the extended leads (L4 = 34.05–41.38 mm) increase lead inductance. ST recommends minimizing gate loop area, using Kelvin emitter connection, and placing gate driver within 20 mm of pins 2 and 3. Thermal pad soldering must cover ≥90% of the metal tab surface to achieve rated R_thj-case.

STGW35NC60WD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 70 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 20A

Power - Max:: 260 W

Switching Energy:: 305µJ (on), 181µJ (off)

Input Type:: Standard

Gate Charge:: 102 nC

Td (on/off) @ 25°C:: 29.5ns/118ns

Test Condition:: 390V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: 40 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW35NC60WD FAQ

1.How can I place an order for STGW35NC60WD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW35NC60WD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW35NC60WD reliable?

The price and inventory of STGW35NC60WD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW35NC60WD is usually 5 days.

3.What payment methods are accepted for STGW35NC60WD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW35NC60WD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW35NC60WD?

STGW35NC60WD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW35NC60WD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW35NC60WD?

For technical support, including STGW35NC60WD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW35NC60WD requirements.

6.How does Aetrix verify that STGW35NC60WD is sourced from the original manufacturer or authorized distributors?

All STGW35NC60WD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW35NC60WD meets industry standards.

7.What is the process for return or replacement of STGW35NC60WD?

All STGW35NC60WD units undergo pre-shipment inspection (PSI). If there is an issue with STGW35NC60WD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW35NC60WD part is unused and in its original packaging.

Return procedure for STGW35NC60WD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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