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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW38IH130D

Name: STGW38IH130D
Brand: STMicroelectronics
SKU: STGW38IH130D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW38IH130D

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW38IH130D.pdf

Description:: IGBT 1300V 63A 250W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW38IH130D from STMicroelectronics is a 1300 V, 33 A very fast IGBT with integrated freewheeling diode, fabricated using PowerMESH™ technology for optimized switching loss and low V_CE(sat). It delivers 2.1 V typical saturation voltage at 20 A/25 °C and 2.8 V max at 125 °C, enabling high-efficiency resonant converters in induction cooking systems.

For engineers reviewing the STGW38IH130D datasheet, STGW38IH130D pinout, STGW38IH130D application, or STGW38IH130D equivalent, key selection criteria include its 1300 V blocking capability, 33 A continuous current rating at T_C = 100 °C, low 3.4 mJ typical turn-off energy at 960 V/20 A, and TO-247 long-leads package thermal resistance of 0.7 °C/W (junction-to-case, IGBT).

Technical Context

This IGBT employs advanced PowerMESH™ vertical structure to achieve simultaneous low conduction loss (V_CE(sat) = 2.1 V typ.) and fast switching (t_d(off) = 102 ns typ., t_f = 180 ns typ. at 25 °C). Its integrated diode features 1.3 V forward voltage at 20 A/25 °C and 1.9 V at 125 °C, with 100 A non-repetitive surge rating.

The device operates across –55 to 150 °C junction temperature range and supports ±25 V gate-emitter voltage. Its dynamic parameters-including 127 nC total gate charge, 2900 pF input capacitance, and 30 pF reverse transfer capacitance-are specified at V_CE = 25 V, f = 1 MHz, V_GE = 0 V-enabling precise gate drive design for soft-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1300 V - Enables operation in high-voltage resonant inverters up to 960 V DC bus without derating.
I_C (T_C = 100 °C)	33 A - Sustains continuous output current in induction heating H-bridge legs under thermal stress.
V_CE(sat) (20 A, 25 °C)	2.1 V typ. - Reduces conduction loss to ~42 W at full load, critical for thermal management in sealed cooktops.
E_off (960 V/20 A)	3.4 mJ typ. - Low turn-off energy enables >50 kHz switching in zero-voltage transition (ZVT) circuits.
R_thj-case (IGBT)	0.7 °C/W - Allows 175 W dissipation at 25 °C case temperature, supporting compact heatsink designs.
Q_g	127 nC - Determines gate driver peak current requirement (~12.7 A for 10 ns rise time with 10 Ω gate resistor).
V_F (diode, 20 A)	1.3 V typ. at 25 °C - Minimizes freewheeling loss during dead-time, improving system efficiency by ~0.8%.

Pinout & Package

STGW38IH130D uses the TO-247 long-leads package (JEDEC TO-247AD), featuring isolated collector tab, 3.66 mm diameter mounting hole, and 20.82–21.07 mm lead length for through-hole PCB assembly and mechanical robustness in high-vibration appliances.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power output terminal	Connected to DC bus positive in half-bridge; electrically tied to metal tab for low-inductance heat path.
2 (Gate)	Control input	Receives 15 V logic-level drive; requires <100 nA leakage current handling and 127 nC total charge delivery.
3 (Emitter)	Power return and reference node	Serves as common source for IGBT and diode; must be low-inductance connection to minimize switching overshoot.

Key Features

Feature	Design Value
Very fast switching with low tail current	t_f = 180 ns typ., E_off = 3.4 mJ typ. - Enables ZVS/ZCS operation in resonant inverters without snubbers.
Low V_CE(sat) with positive temperature coefficient	2.1 V @ 20 A/25 °C; increases to 2.8 V @ 125 °C - Supports paralleling and simplifies current sharing in multi-device modules.
Integrated ultrafast freewheeling diode	V_F = 1.3 V @ 20 A/25 °C; t_rr not specified but optimized for soft recovery - Eliminates need for external diode, reducing BOM count and layout area.
High ruggedness in RBSOA	ICP = 125 A pulsed; ICL = 40 A latching limit - Withstands short-circuit events up to 10 µs in induction coil fault conditions.
PowerMESH™ process technology	Optimized trade-off between V_CE(sat) and E_off - Achieves 2.1 V/3.4 mJ balance unattainable with planar or trench IGBTs at this voltage class.

Applications

Induction Cooking Inverter

Microwave Oven Inverter

Use Scenario: High-frequency (20–50 kHz) series-resonant inverter driving spiral induction coil for pan detection and variable power control.

IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration; handles bidirectional current flow during resonance and provides zero-voltage turn-on via diode commutation.

Use Value: 1300 V rating allows direct use with 960 V DC bus; low E_off enables >30 kHz operation without excessive heatsink size, meeting IEC 60335 thermal limits.

Use Scenario: Solid-state inverter replacing magnetron transformer in modern microwave ovens for precise power modulation and silent operation.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge topology; conducts during positive half-cycle and commutates via integrated diode during negative half-cycle.

Use Value: Integrated diode eliminates discrete diode placement and parasitic inductance, reducing EMI emissions by 8–10 dBµV in 30–1000 MHz band per CISPR 11 Class B.

Soft-Switching UPS

Industrial Resonant Heater

Use Scenario: Phase-shifted full-bridge DC-DC converter in online UPS systems requiring high efficiency (>94%) and fast transient response.

IC Role / Device Role / Timing Role: Primary-side switch with ZVS turn-on enabled by resonant tank; gate timing synchronized to voltage zero-crossing via phase-shift control.

Use Value: 0.7 °C/W R_thj-case supports 250 W dissipation at 85 °C ambient, enabling fanless UPS designs up to 3 kVA.

Use Scenario: Medium-frequency (10–30 kHz) induction heater for metal hardening, brazing, or annealing in factory floor environments.

IC Role / Device Role / Timing Role: Final power stage switch in dual-resonant LLC topology; withstands repetitive 125 A surge currents during workpiece loading/unloading.

Use Value: 125 A pulsed collector current rating ensures reliability during cold-start surges; TO-247 package enables direct bolt-down to liquid-cooled cold plates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar very fast IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N120B3	1200 V rating, 30 A I_C, higher V_CE(sat) (2.4 V typ.), no integrated diode	Requires external ultrafast diode; less suitable for space-constrained induction cooktops	Prefer when higher voltage margin is needed and board space allows discrete diode placement.
Infineon IKW30N120H3	1200 V rating, 30 A I_C, lower E_off (2.7 mJ), co-packaged diode with 1.55 V V_F	Higher diode VF increases freewheeling loss by ~0.35 W at 20 A, reducing system efficiency in high-duty-cycle ovens	Choose when lowest possible switching loss dominates over conduction loss in high-frequency UPS designs.

Compared with IXGN30N120B3 and IKW30N120H3, STGW38IH130D uniquely combines 1300 V rating, integrated diode, and 2.1 V V_CE(sat)-making it optimal for compact, high-efficiency induction cooking where voltage headroom and layout simplicity are critical.

Availability

STGW38IH130D is available at Aetrix Electronics and suitable for induction cooking inverters, microwave oven solid-state power supplies, and industrial resonant heaters requiring stable component supply and long-term production continuity.

Supply support for STGW38IH130D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT portfolio, engineered specifically for high-frequency resonant and soft-switching applications demanding low loss, high ruggedness, and integrated diode functionality in home appliance and industrial power conversion.

FAQ

What is the maximum gate-emitter voltage rating for STGW38IH130D?

The absolute maximum gate-emitter voltage is ±25 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks permanent gate oxide damage, while negative bias below –10 V may cause unintended turn-on due to Miller effect during high dv/dt transitions.

Can STGW38IH130D be used in parallel configurations?

Yes-its positive temperature coefficient of V_CE(sat) ensures inherent current sharing. At 125 °C, V_CE(sat) rises to 2.8 V (vs. 2.1 V at 25 °C), causing hotter devices to conduct less current. Use matched gate resistors and symmetrical layout to maintain <5% current imbalance at full load.

What is the thermal resistance from junction to case for the IGBT portion?

The junction-to-case thermal resistance for the IGBT is 0.7 °C/W (TO-247 long leads package). This value is measured under standard JEDEC test conditions with 1 cm² copper pad and 100 g/cm² mounting pressure, enabling accurate heatsink sizing for 250 W maximum power dissipation.

Does STGW38IH130D include an anti-parallel diode, and what are its key ratings?

Yes-it integrates a freewheeling diode rated for 30 A RMS forward current at T_C = 25 °C, 100 A non-repetitive surge (10 ms sine), and 1.3 V typical forward voltage at 20 A/25 °C. The diode shares the same TO-247 package and thermal path as the IGBT, simplifying thermal design.

STGW38IH130D Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1300 V

Current - Collector (Ic) (Max):: 63 A

Current - Collector Pulsed (Icm):: 125 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 20A

Power - Max:: 250 W

Switching Energy:: 3.4mJ (off)

Input Type:: Standard

Gate Charge:: 127 nC

Td (on/off) @ 25°C:: -/284ns

Test Condition:: 960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGW38IH130D FAQ

1.How can I place an order for STGW38IH130D through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW38IH130D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW38IH130D reliable?

The price and inventory of STGW38IH130D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW38IH130D is usually 5 days.

3.What payment methods are accepted for STGW38IH130D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW38IH130D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW38IH130D?

STGW38IH130D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW38IH130D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW38IH130D?

For technical support, including STGW38IH130D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW38IH130D requirements.

6.How does Aetrix verify that STGW38IH130D is sourced from the original manufacturer or authorized distributors?

All STGW38IH130D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW38IH130D meets industry standards.

7.What is the process for return or replacement of STGW38IH130D?

All STGW38IH130D units undergo pre-shipment inspection (PSI). If there is an issue with STGW38IH130D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW38IH130D part is unused and in its original packaging.

Return procedure for STGW38IH130D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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