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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW40H120F2

Name: STGW40H120F2
Brand: STMicroelectronics
SKU: STGW40H120F2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW40H120F2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW40H120F2.pdf

Description:: IGBT TRENCH FS 1200V 80A TO247-3

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Product details

Overview

STGW40H120F2 from STMicroelectronics is a 1200 V, 40 A trench gate field-stop IGBT in the H-series high-speed switching family, optimized for photovoltaic inverters and UPS systems. It delivers V_CE(sat) = 2.1 V (typ.) at I_C = 40 A, 5 µs short-circuit withstand time at T_J = 150 °C, and R_thJC = 0.32 °C/W - enabling high-efficiency, thermally robust operation in high-frequency converters.

For engineers reviewing the STGW40H120F2 datasheet, STGW40H120F2 pinout, STGW40H120F2 application, or STGW40H120F2 equivalent, this device is selected for its minimized tail current, safe paralleling capability, positive V_CE(sat) temperature coefficient, tight parameter distribution, and TO-247 long leads package compatibility with industrial thermal management requirements.

Technical Context

This IGBT employs a proprietary trench gate field-stop structure to balance conduction and switching losses - achieving 1.32 mJ turn-off energy (E_off) and 1755 A/µs (di/dt)_on at T_J = 25 °C. Its gate threshold voltage (V_GE(th)) ranges 5–7 V and exhibits stable 0.9–1.1× normalization across −50 to 150 °C junction temperatures.

The device supports safe paralleling via slightly positive V_CE(sat) temperature coefficient and low thermal resistance (0.32 °C/W), while its 3200 pF input capacitance (C_ies) and 158 nC total gate charge (Q_g) are calibrated for 10 Ω gate drive under 960 V DC-link conditions per Figure 23 of DS10158 Rev 4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Withstands full DC-link voltage in 1000 V-class solar and UPS systems without derating.
I_C (T_C = 100 °C)	40 A - Continuous rated current at industry-standard heatsink temperature, defining real-world thermal design margin.
V_CE(sat) (T_J = 175 °C)	2.5 V - Confirmed saturation voltage at maximum operating junction temperature, directly impacting conduction loss and thermal rise.
t_sc	5 µs - Minimum short-circuit withstand time at T_J = 150 °C, enabling robust fault handling in grid-tied inverters.
R_thJC	0.32 °C/W - Low junction-to-case thermal resistance enables efficient heat transfer to heatsink, critical for forced-air or passive cooling.
Q_g	158 nC - Total gate charge value measured at V_CC = 960 V, I_C = 40 A, defining required gate driver peak current capability.
E_off	2.46 mJ (T_J = 175 °C) - Turn-off energy under worst-case thermal condition, used to size snubbers and calculate switching loss.

Pinout & Package

STGW40H120F2 uses the TO-247 long leads package (JEDEC TO-247-3L variant), featuring isolated mounting hole, extended lead length for creepage compliance, and copper tab for direct heatsink attachment. Thermal path is optimized via low-R_thJC die attach and solderable metal base.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control terminal	Receives ±20 V gate drive signal; 158 nC Q_g requires ≥2 A peak driver current for 100 ns switching transitions.
C (Pin 2 + Tab)	Collector power terminal	Main high-side power path; electrically connected to metal tab for low-inductance, high-current conduction and thermal conduction to heatsink.
E (Pin 3)	Emitter return terminal	Low-side reference node; separates gate drive ground from power ground to minimize noise coupling in half-bridge configurations.

Key Features

Feature	Design Value
Minimized tail current	Reduces turn-off energy (E_off = 2.46 mJ @ T_J = 175 °C) and di/dt-induced voltage overshoot in hard-switched topologies.
Positive V_CE(sat) tempco	Enables inherent current sharing during parallel operation without external ballasting resistors or active current balancing.
Tight parameter distribution	Ensures consistent dynamic behavior (e.g., t_d(off) = 161 ns ±5 ns) across production lots, simplifying gate drive design and system validation.
5 µs short-circuit withstand	Provides deterministic fault window for protection circuitry to respond before thermal runaway occurs at 150 °C junction temperature.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized 50/60 Hz AC output.

IC Role / Device Role / Timing Role: High-side IGBT in NPC or T-type three-level topology, switching at 16–20 kHz with soft-charging gate drive.

Use Value: 2.5 V V_CE(sat) at 175 °C and 1.32 mJ E_off enable >98.5% peak efficiency while maintaining <105 °C case temperature under 40 A RMS load.

Use Scenario: Online double-conversion UPS delivering clean sine-wave output during utility outages with zero transfer time.

IC Role / Device Role / Timing Role: Output stage IGBT in bidirectional DC-AC inverter, operating in PWM mode with 12 kHz carrier frequency.

Use Value: 5 µs short-circuit rating allows fast detection and shutdown during battery short events, preserving system reliability and meeting UL 1778 fault-clearing requirements.

Welding Equipment

Power Factor Correction

Use Scenario: IGBT-based inverter welders generating high-current DC or pulsed output for MIG/TIG processes.

IC Role / Device Role / Timing Role: Primary switching device in resonant or hard-switched DC link, handling 40–160 A pulsed collector current.

Use Value: 160 A I_CP rating and 468 W P_TOT support 300 A peak welding currents with 60% duty cycle, reducing need for oversized heatsinks.

Use Scenario: Active front-end rectifiers in industrial motor drives and server PSUs correcting displacement and distortion power factor.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC, switching at 60–100 kHz with zero-voltage transition assist.

Use Value: 3200 pF C_ies and 80 pF C_res yield predictable Miller effect behavior, enabling stable gate drive design without overcompensation or oscillation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N120B3	Higher V_CE(sat) = 2.8 V @ 40 A, lower E_off = 1.9 mJ, TO-247 package with standard lead length.	Better suited for lower-frequency (<10 kHz) applications where conduction loss dominates; less ideal for 16+ kHz PV inverters.	Select when prioritizing turn-off speed over thermal efficiency at high ambient temperatures.
Infineon IKW40N120H3	Identical 1200 V/40 A rating, but higher Q_g = 190 nC and R_thJC = 0.38 °C/W; same TO-247 long leads footprint.	Requires stronger gate driver and larger heatsink; preferred where Infineon's H3 series ecosystem integration (e.g., driver ICs) is standardized.	Choose for drop-in replacement only if existing layout accommodates higher thermal impedance and gate drive current demand.

Compared with IXGN40N120B3 and IKW40N120H3, STGW40H120F2 offers the lowest V_CE(sat) at elevated temperature and best thermal resistance - making it optimal for space-constrained, high-efficiency 16–20 kHz converters where junction temperature must stay below 150 °C under full load.

Availability

STGW40H120F2 is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STGW40H120F2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

This device belongs to ST's H-series high-speed IGBT portfolio, engineered specifically for high-frequency (10–100 kHz) power conversion systems demanding minimal switching loss, robust short-circuit ruggedness, and reliable paralleling capability.

FAQ

What is the maximum gate-emitter voltage rating for STGW40H120F2?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of −10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below −10 V may cause unintended turn-on due to Miller coupling in high-di/dt environments.

Does STGW40H120F2 include an integrated freewheeling diode?

No - STGW40H120F2 is a standalone IGBT. The co-packed STGW40H120DF2 integrates a matched diode, but this part requires external anti-parallel diode selection. Diode recovery characteristics must be verified against the IGBT's 5 µs short-circuit window and 1755 A/µs di/dt rating.

How does the TO-247 long leads variant differ electrically from standard TO-247?

There is no electrical difference - lead length affects only mechanical mounting, creepage distance, and thermal interface compliance. Electrical parameters including R_thJC, V_CE(sat), and switching times remain identical between STGW40H120F2 (long leads) and STGWA40H120F2 (standard leads).

Can STGW40H120F2 be paralleled without external emitter resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution allow stable current sharing under matched gate drive and heatsinking. However, individual gate resistors (≥5 Ω) and symmetrical PCB layout remain mandatory to suppress oscillation and ensure simultaneous turn-on.

STGW40H120F2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 40A

Power - Max:: 468 W

Switching Energy:: 1mJ (on), 1.32mJ (off)

Input Type:: Standard

Gate Charge:: 158 nC

Td (on/off) @ 25°C:: 18ns/152ns

Test Condition:: 600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW40H120F2 FAQ

1.How can I place an order for STGW40H120F2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW40H120F2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW40H120F2 reliable?

The price and inventory of STGW40H120F2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW40H120F2 is usually 5 days.

3.What payment methods are accepted for STGW40H120F2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW40H120F2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW40H120F2?

STGW40H120F2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW40H120F2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW40H120F2?

For technical support, including STGW40H120F2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW40H120F2 requirements.

6.How does Aetrix verify that STGW40H120F2 is sourced from the original manufacturer or authorized distributors?

All STGW40H120F2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW40H120F2 meets industry standards.

7.What is the process for return or replacement of STGW40H120F2?

All STGW40H120F2 units undergo pre-shipment inspection (PSI). If there is an issue with STGW40H120F2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW40H120F2 part is unused and in its original packaging.

Return procedure for STGW40H120F2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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