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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW40H65DFB

Name: STGW40H65DFB
Brand: STMicroelectronics
SKU: STGW40H65DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW40H65DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW40H65DFB.pdf

Description:: IGBT TRENCH FS 650V 80A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW40H65DFB from STMicroelectronics is a 650 V, 40 A high-speed trench gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-247 long leads package. It delivers V_CE(sat) = 1.6 V (typ.) at I_C = 40 A and T_J = 25 °C, features tight parameter distribution, positive V_CE(sat) temperature coefficient, and R_thJC = 0.53 °C/W for the IGBT section-optimized for solar inverters and high-efficiency AC-DC converters.

For engineers reviewing the STGW40H65DFB datasheet, STGW40H65DFB pinout, STGW40H65DFB application, or STGW40H65DFB equivalent, key selection criteria include switching energy (E_on = 498 µJ, E_off = 363 µJ @ T_J = 25 °C), reverse recovery performance (t_rr = 62 ns, Q_rr = 99 nC), thermal resistance, paralleling capability, and diode softness under high di/dt.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses across 1–20 kHz operating ranges. Its slightly positive V_CE(sat) temperature coefficient (1.6 V @ 25 °C → 1.8 V @ 175 °C) enables stable current sharing during parallel operation without external emitter resistors.

The co-packaged diode exhibits very fast soft recovery (t_rr = 62 ns, dI_rr/dt = 187 A/µs @ T_J = 25 °C) and low reverse recovery charge (Q_rr = 99 nC), minimizing voltage overshoot and EMI in hard-switched bridge legs of string inverters and PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands DC bus voltages up to 650 V in single-phase or three-phase inverter topologies.
I_C (T_C = 100 °C)	40 A - Continuous collector current rating at case temperature of 100 °C, defining thermal design margin for heatsink sizing.
V_CE(sat)	1.6 V (typ.) @ I_C = 40 A, T_J = 25 °C - Low conduction loss enabling >98% efficiency in 10–15 kW solar inverters.
E_off	363 µJ @ V_CC = 400 V, I_C = 40 A, R_G = 5 Ω - Enables 16 kHz switching in interleaved PFC without excessive die heating.
t_rr (diode)	62 ns @ I_F = 40 A, dI/dt = 100 A/µs - Limits voltage spike during freewheeling, reducing snubber requirements in bidirectional switches.
R_thJC (IGBT)	0.53 °C/W - Supports junction-to-case thermal path optimization for forced-air or passive heatsink designs.
T_J(max)	175 °C - Allows operation in high ambient environments (e.g., rooftop PV enclosures) with derated current above 125 °C.

Pinout & Package

TO-247 long leads package with isolated mounting hole; standard 3-pin configuration (Collector, Gate, Emitter) for high-voltage isolation and mechanical robustness in industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Collector (C)	Electrically connected to metal tab; requires insulated mounting to heatsink to prevent short-circuit in half-bridge configurations.
Pin 2	Gate (G)	High-impedance control terminal; requires < ±20 V gate drive with low-inductance layout to suppress oscillation during fast switching.
Pin 3	Emitter (E)	Common reference node for gate drive and current sensing; must be routed with minimal loop inductance to reduce voltage spikes during turn-off.

Key Features

Feature	Design Value
Minimized tail current	Reduces E_off by ~35% vs. standard field-stop IGBTs, lowering total switching loss at 10–20 kHz.
Very fast soft recovery diode	Q_rr = 99 nC and softness factor (t_b/t_a) > 0.4 ensure low EMI and reduced stress on gate drivers during commutation.
Positive V_CE(sat) tempco	Enables natural current balancing in parallel-connected devices without current-sharing resistors or active monitoring.
Tight parameter distribution	V_CE(sat) tolerance ±0.2 V and t_rr variation < ±15% simplify system-level qualification and BOM consolidation.
High-speed HB series architecture	Optimized for 10–50 kHz range in solar MPPT stages and grid-tied inverters, achieving best-in-class E_ts/R_thJC ratio.

Applications

Solar String Inverters

Industrial AC-DC Converters

Use Scenario: DC-AC conversion stage in residential and commercial photovoltaic systems with 600–1000 V DC input.

IC Role / Device Role / Timing Role: Main switching device in full-bridge or NPC topology, handling 40 A RMS output current at 16–20 kHz PWM frequency.

Use Value: Low E_off (363 µJ) and soft diode recovery minimize filter size and improve THD compliance per IEEE 1547.

Use Scenario: Active front-end rectifier in servo drives and UPS systems requiring regenerative braking and unity power factor.

IC Role / Device Role / Timing Role: Bidirectional switch in Vienna rectifier or three-level T-type converter, operating at 10–15 kHz with 400 V AC line input.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across parallel legs, improving reliability under unbalanced load conditions.

Central Solar Inverters

High-Efficiency PFC Modules

Use Scenario: Power stage in multi-string central inverters rated 50–250 kW, deployed in utility-scale solar farms.

IC Role / Device Role / Timing Role: High-current IGBT in three-phase inverter leg, switching 80 A peak current with forced-air cooling.

Use Value: R_thJC = 0.53 °C/W and T_J(max) = 175 °C allow sustained operation at 100 °C case temperature with 20 K thermal margin.

Use Scenario: Boost switch in continuous-conduction-mode (CCM) PFC front-end for telecom rectifiers and medical power supplies.

IC Role / Device Role / Timing Role: Unidirectional switch in boost converter, conducting 40 A average current with 650 V blocking capability.

Use Value: Low saturation voltage (1.6 V) reduces conduction loss by 22% vs. comparable 650 V IGBTs, increasing PFC efficiency from 96.2% to 96.8% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGH40N60B3	600 V rating, higher V_CE(sat) (1.8 V), slower diode (t_rr = 120 ns), R_thJC = 0.65 °C/W	Limited to ≤500 V DC bus; less suitable for 650 V solar string inverters due to lower voltage margin.	Select when cost sensitivity outweighs efficiency gain and system voltage remains below 550 V.
Infineon IKW40N65ES5	650 V rating, similar V_CE(sat) (1.65 V), but diode t_rr = 95 ns and Q_rr = 160 nC - harder recovery	Higher EMI risk in high-di/dt PFC stages; may require larger snubbers or gate resistor tuning.	Prefer for space-constrained designs where footprint compatibility matters more than diode softness.

Compared with IXGH40N60B3 and IKW40N65ES5, STGW40H65DFB offers superior voltage margin, lowest total switching energy, and the softest diode recovery-making it optimal for high-efficiency, high-reliability solar and industrial AC-DC systems where EMI and thermal management are critical.

Availability

STGW40H65DFB is available at Aetrix Electronics and suitable for solar inverters (string and central), industrial AC-DC converters, and high-efficiency PFC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGW40H65DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power discrete devices, microcontrollers, and analog ICs for industrial, automotive, and energy applications.

This device belongs to ST's HB (High-Balance) series of high-speed IGBTs-designed specifically to maximize efficiency in frequency converters operating between 10 kHz and 50 kHz, with emphasis on solar, UPS, and motor drive markets.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175 °C junction temperature?

A gate resistor of ≤5 Ω is recommended for stable turn-off behavior at T_J = 175 °C, based on measured t_d(off) = 141 ns and E_off = 764 µJ under those conditions. Higher values increase switching time and energy loss, risking thermal runaway in parallel configurations without active gate control.

Can STGW40H65DFB be used in parallel without external emitter resistors?

Yes-its positive V_CE(sat) temperature coefficient (1.6 V @ 25 °C → 1.8 V @ 175 °C) and tight parameter distribution (±0.2 V V_CE(sat)) enable stable current sharing across parallel devices without emitter resistors, provided layout symmetry and thermal coupling are maintained.

How does the diode's reverse recovery performance compare at 175 °C versus 25 °C?

At T_J = 175 °C, t_rr increases to 310 ns and Q_rr rises to 1550 nC-5× and 15.6× higher than room-temperature values-requiring gate drive and snubber design to accommodate increased voltage overshoot and EMI in high-temperature operation.

Is the TO-247 long leads package RoHS-compliant and halogen-free?

Yes-the TO-247 long leads package meets RoHS Directive 2011/65/EU and is halogen-free per ST's ECOPACK2 specification, verified in DS11680 Rev 3 (October 2024) under Section 4 "Package information" and www.st.com/ecopack.

STGW40H65DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 40A

Power - Max:: 283 W

Switching Energy:: 498µJ (on), 363µJ (off)

Input Type:: Standard

Gate Charge:: 210 nC

Td (on/off) @ 25°C:: 40ns/142ns

Test Condition:: 400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr):: 62 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW40H65DFB FAQ

1.How can I place an order for STGW40H65DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW40H65DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW40H65DFB reliable?

The price and inventory of STGW40H65DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW40H65DFB is usually 5 days.

3.What payment methods are accepted for STGW40H65DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW40H65DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW40H65DFB?

STGW40H65DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW40H65DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW40H65DFB?

For technical support, including STGW40H65DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW40H65DFB requirements.

6.How does Aetrix verify that STGW40H65DFB is sourced from the original manufacturer or authorized distributors?

All STGW40H65DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW40H65DFB meets industry standards.

7.What is the process for return or replacement of STGW40H65DFB?

All STGW40H65DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGW40H65DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW40H65DFB part is unused and in its original packaging.

Return procedure for STGW40H65DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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