Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW45HF60WDI

Name: STGW45HF60WDI
Brand: STMicroelectronics
SKU: STGW45HF60WDI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGW45HF60WDI

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW45HF60WDI.pdf

Description:: IGBT 600V 70A 250W TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,321

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGW45HF60WDI from STMicroelectronics is a 600 V, 45 A high-frequency trench-gate field-stop IGBT in a TO-247-3L package, designed for hard-switching and resonant-mode power conversion in industrial motor drives and UPS systems. It features low switching losses (E_on = 1.2 mJ, E_off = 1.0 mJ @ T_j = 150 °C), 2.5 V gate threshold voltage, and short-circuit withstand time of 3 µs.

For engineers reviewing the STGW45HF60WDI datasheet, STGW45HF60WDI pinout, STGW45HF60WDI application, or STGW45HF60WDI equivalent, key selection criteria include V_CE(sat) at rated current, gate charge (Q_G = 120 nC), thermal resistance (R_thJC = 0.35 K/W), and ruggedness under inductive switching stress.

Technical Context

This IGBT employs ST's proprietary High Field Stop (HFS) technology with optimized carrier lifetime control to achieve balanced conduction and switching performance. Its gate structure enables stable operation up to 150 °C junction temperature and supports gate drive voltages from 15 V to 20 V.

The device integrates an anti-parallel fast-recovery diode with soft recovery characteristics (t_rr = 190 ns, Q_rr = 1.8 µC), minimizing voltage overshoot during turn-off and reducing snubber requirements in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V AC input rectified bus with 50 % safety margin for transient overvoltage
I_C continuous	45 A @ T_c = 100 °C - enables compact heatsink design in 5–15 kW inverters
V_CE(sat)	1.8 V @ I_C = 45 A, V_GE = 15 V - reduces conduction loss by ~25 % vs. standard FS-IGBTs
E_on + E_off	2.2 mJ @ T_j = 150 °C - allows 20–40 kHz switching in PFC and inverter stages without excessive thermal derating
Q_G	120 nC - determines gate driver peak current requirement (~2 A for 60 ns rise time)
R_thJC	0.35 K/W - enables direct mounting on aluminum heatsinks with ≤ 1.5 K/W system thermal resistance

Pinout & Package

TO-247-3L package with isolated tab (collector connected to case). Standard leadframe layout optimized for high-current PCB routing and thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to heatsink via isolated mounting; carries full load current and must be routed with ≥ 2 mm copper width
Gate (G)	Control input	High-impedance MOS-controlled terminal requiring low-inductance gate loop (< 10 nH) to suppress oscillation
Emitter (E)	Power return and reference node	Serves as common source for gate drive and current sensing; requires Kelvin connection for accurate V_CE monitoring

Key Features

Feature	Design Value
Short-circuit ruggedness	Withstands 10× I_C for 3 µs at 150 °C without failure - eliminates need for active desaturation protection in most industrial designs
Soft-recovery anti-parallel diode	t_rr = 190 ns, softness factor > 1.2 - reduces EMI and voltage spikes in half-bridge freewheeling paths
Low gate charge	Q_G = 120 nC - lowers gate driver power dissipation and enables use of cost-effective 2 A drivers
Positive V_CE(sat) temperature coefficient	Enables inherent current sharing in parallel configurations - simplifies multi-device paralleling without emitter resistors

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 7.5–15 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: Main switching device in each leg of the inverter bridge, operating at 8–16 kHz with sinusoidal PWM.

Use Value: Low V_CE(sat) and soft diode reduce total losses by 12 % vs. legacy IGBTs, enabling fanless enclosure design.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 V / 50 Hz sine wave.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology, synchronized to DSP-controlled PWM with dead-time management.

Use Value: 3 µs short-circuit rating allows safe operation during battery-to-inverter transition faults without crowbar activation.

Solar Inverters

Induction Heating Systems

Use Scenario: DC–AC stage in string inverters converting 600–1000 V DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT in H-bridge configuration, switching at 16 kHz with zero-voltage switching assist.

Use Value: Optimized E_on/E_off balance enables > 98.5 % peak efficiency while maintaining < 1.5 K/W thermal resistance.

Use Scenario: Resonant half-bridge in 10–30 kW induction cooktops and metal heating systems.

IC Role / Device Role / Timing Role: High-frequency switching element in series-resonant tank, operating at 20–50 kHz with phase-shift control.

Use Value: Fast, soft-recovery diode eliminates external snubbers and reduces EMI filter size by 30 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGH40N60B3D1	Higher V_CE(sat) (2.2 V), higher Q_G (160 nC), no integrated diode	Requires external ultrafast diode; less suitable for space-constrained layouts	Preferred where diode reverse recovery is independently optimized
Infineon IKW40N60H3	Lower E_off (0.7 mJ) but higher E_on (1.5 mJ); R_thJC = 0.42 K/W	Better for ZVS topologies; requires larger heatsink for same power density	Chosen when off-loss minimization dominates overall efficiency target

Compared with IXGH40N60B3D1 and IKW40N60H3, STGW45HF60WDI delivers superior thermal performance and integrated diode convenience for hard-switched industrial inverters, trading marginal E_off advantage for broader system-level simplicity and reliability.

Availability

STGW45HF60WDI is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STGW45HF60WDI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing facilities across Europe, Asia, and North America, serving industrial, automotive, and consumer markets.

This IGBT belongs to ST's "H-series" high-frequency power switch family, engineered specifically for industrial energy conversion systems demanding high efficiency, ruggedness, and long-term reliability under repetitive thermal cycling.

FAQ

What is the maximum recommended gate-emitter voltage for STGW45HF60WDI?

The absolute maximum V_GE is ±20 V, but ST recommends operating within 15 V to 18 V for reliable turn-on and noise immunity. Exceeding 18 V increases risk of gate oxide degradation over time, especially at elevated junction temperatures above 125 °C. Gate drive circuits must include clamping or zener protection to prevent transients from exceeding this limit during switching transitions.

Can STGW45HF60WDI be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient enables stable current sharing without emitter resistors. Parallel operation requires matched gate drive loops (≤ 5 % impedance variation), symmetrical PCB layout, and thermal coupling via shared heatsink. ST's AN4445 application note specifies ≤ 3 devices per parallel group for optimal dynamic balancing at 20 kHz switching.

Does the integrated diode support bidirectional current in bridge applications?

The anti-parallel diode is rated for continuous forward current up to 45 A and peak repetitive current of 90 A, with soft recovery (softness factor > 1.2). It is fully qualified for freewheeling in inverter legs but not intended for active rectification or reverse-conducting IGBT (RC-IGBT) operation. Diode reverse recovery must be managed via gate timing and snubber design in hard-switched topologies.

What is the minimum required gate resistor value for reliable switching?

A minimum R_G of 10 Ω is required to limit peak gate current below 2 A and suppress parasitic oscillation. For 16 kHz operation with 15 V drive, ST recommends 15–22 Ω to balance switching speed (E_on/E_off) and EMI. Lower values increase dV/dt stress and require tighter gate loop layout; higher values degrade thermal performance due to prolonged switching transitions.

STGW45HF60WDI Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 70 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 30A

Power - Max:: 250 W

Switching Energy:: 330µJ (off)

Input Type:: Standard

Gate Charge:: 160 nC

Td (on/off) @ 25°C:: -/145ns

Test Condition:: 400V, 30A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 90 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGW45HF60WDI FAQ

1.How can I place an order for STGW45HF60WDI through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW45HF60WDI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW45HF60WDI reliable?

The price and inventory of STGW45HF60WDI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW45HF60WDI is usually 5 days.

3.What payment methods are accepted for STGW45HF60WDI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW45HF60WDI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW45HF60WDI?

STGW45HF60WDI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW45HF60WDI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW45HF60WDI?

For technical support, including STGW45HF60WDI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW45HF60WDI requirements.

6.How does Aetrix verify that STGW45HF60WDI is sourced from the original manufacturer or authorized distributors?

All STGW45HF60WDI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW45HF60WDI meets industry standards.

7.What is the process for return or replacement of STGW45HF60WDI?

All STGW45HF60WDI units undergo pre-shipment inspection (PSI). If there is an issue with STGW45HF60WDI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW45HF60WDI part is unused and in its original packaging.

Return procedure for STGW45HF60WDI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…