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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW50H60DF

Name: STGW50H60DF
Brand: STMicroelectronics
SKU: STGW50H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW50H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW50H60DF.pdf

Description:: IGBT 600V 100A 360W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW50H60DF from STMicroelectronics is a 600 V, 50 A field-stop trench-gate IGBT with integrated ultrafast soft-recovery antiparallel diode in TO-247 package. It delivers 1.8 V V_CE(sat) at 50 A/25 °C, 6 µs short-circuit withstand time at 400 V, and 0.35 °C/W IGBT junction-to-case thermal resistance. Designed for high-frequency power conversion stages in photovoltaic inverters and UPS systems.

For engineers reviewing the STGW50H60DF datasheet, STGW50H60DF pinout, STGW50H60DF application, or STGW50H60DF equivalent, key selection criteria include V_CE(sat) temperature coefficient, R_thJC (IGBT), t_SC, Q_gc/Q_ge ratio, and diode reverse recovery charge (Q_rr = 110 nC at 25 °C).

Technical Context

This IGBT employs ST's proprietary field-stop trench gate structure to balance conduction loss (low V_CE(sat)) and switching loss (low E_on/E_off), enabling operation up to 50 kHz in hard-switched converters. Its slightly positive V_CE(sat) temperature coefficient ensures stable current sharing during parallel operation.

The co-packaged ultrafast diode features 55 ns trr and 110 nC Q_rr at 25 °C, with soft recovery behavior minimizing voltage overshoot and EMI. Thermal design is supported by separate R_thJC values: 0.35 °C/W for the IGBT die and 1.5 °C/W for the diode die.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage under open-gate condition; defines system DC bus rating compatibility.
I_C (T_C = 100 °C)	50 A - Continuous collector current at case temperature of 100 °C; sets thermal derating limit for heatsink design.
V_CE(sat)	1.8 V @ 50 A, 25 °C - Low saturation voltage reduces conduction loss; increases by 0.2 V at 125 °C junction temperature.
t_SC	6 µs @ V_CC = 400 V, V_GE = 15 V - Short-circuit withstand capability enables robust protection circuitry without immediate desaturation shutdown.
Q_gc	90 nC - Gate-collector charge determines Miller effect sensitivity and RG-dependent turn-off delay; critical for gate driver sizing.
trr (diode)	55 ns @ I_F = 30 A, dI/dt = 100 A/µs - Fast, soft reverse recovery minimizes commutation losses and voltage spikes in bridge-leg configurations.
R_thJC (IGBT)	0.35 °C/W - Low junction-to-case thermal resistance enables high-power density mounting on compact heatsinks.

Pinout & Package

TO-247 package with 3-pin configuration: Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter (with integrated diode anode connected to emitter, cathode to collector). Case-isolated metal tab serves as collector terminal and primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input for IGBT channel; requires low-impedance drive (RG = 10 Ω typical) to achieve specified 62 ns t_d(on).
Pin 2	Collector	Main high-side power terminal; electrically and thermally connected to metal tab; carries full load current and diode reverse recovery current.
Pin 3	Emitter	Power return node for IGBT and anode of integrated diode; referenced to gate drive ground; must maintain low-inductance layout.

Key Features

Feature	Design Value
Field-stop trench gate structure	Optimizes trade-off between V_CE(sat) (1.8 V) and E_off (0.86 mJ), enabling >97% efficiency in 20–50 kHz PV inverter designs.
Tight parameter distribution	V_CE(sat) and switching times vary <±10% across production lot, simplifying parallel IGBT array design without active current balancing.
Ultrafast soft-recovery diode	Q_rr = 110 nC and trr = 55 ns with softness factor >1.2 reduce snubber stress and EMI generation in bidirectional switching paths.
Positive V_CE(sat) tempco	V_CE(sat) increases with temperature (2.0 V @ 125 °C), enabling inherent current sharing when paralleling multiple devices.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Three-phase string or central inverter DC-AC stage operating at 16–32 kHz switching frequency with SiC or IGBT-based NPC topologies.

IC Role / Device Role / Timing Role: High-side IGBT switch with co-packaged diode providing freewheeling path during dead-time; handles 50 A RMS output current.

Use Value: 6 µs short-circuit tolerance allows safe fault detection window; 0.35 °C/W R_thJC supports compact heatsink integration in outdoor-rated enclosures.

Use Scenario: Online double-conversion UPS inverter stage delivering clean 50/60 Hz sine wave under variable load (0–100% step), requiring fast transient response and low THD.

IC Role / Device Role / Timing Role: Bridge-leg switching device managing bidirectional energy flow between battery bank and AC output; operates with 10–20 kHz PWM.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across parallel modules; soft diode recovery suppresses voltage spikes during zero-crossing commutation.

Welding Equipment

Power Factor Correction

Use Scenario: Inverter-based arc welding power supply using resonant or hard-switched topologies with 20–100 kHz carrier frequency and high peak current demands.

IC Role / Device Role / Timing Role: Primary switching element in primary-side H-bridge or half-bridge, handling pulsed 200 A I_CP surges with 10 ms duty cycle.

Use Value: 200 A pulsed collector current rating and 120 A non-repetitive diode surge current support high-duty-cycle arc initiation without thermal runaway.

Use Scenario: Active front-end (AFE) or boost PFC stage in industrial motor drives or server PSUs, operating continuously at 30–100 kHz with near-unity PF.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), conducting 50 A average current while sustaining 600 V DC-link voltage.

Use Value: Low 1.8 V V_CE(sat) minimizes conduction loss at high line cycles; 90 nC Q_gc enables efficient gate driving with standard 2 A peak drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	V_CE(sat) = 2.1 V @ 50 A, R_thJC = 0.45 °C/W, t_SC = 10 µs, no co-pack diode	Requires external ultrafast diode; higher conduction loss but longer short-circuit margin	Select when system-level short-circuit protection timing exceeds 6 µs and discrete diode layout is acceptable.
Infineon IKW50N60T	V_CE(sat) = 1.7 V @ 50 A, R_thJC = 0.33 °C/W, t_SC = 5 µs, integrated diode with 130 nC Q_rr	Lower V_CE(sat) but higher diode Q_rr; tighter thermal resistance	Select when minimizing conduction loss is prioritized over diode recovery EMI, and thermal interface is optimized for 0.33 °C/W.

Compared with IXGN50N60B3 and IKW50N60T, STGW50H60DF offers the best balance of low V_CE(sat), soft diode recovery (Q_rr = 110 nC), and proven 6 µs short-circuit robustness-making it optimal for cost-sensitive, high-reliability PV and UPS inverters where integrated diode simplicity and EMI control are critical.

Availability

STGW50H60DF is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade production.

Supply support for STGW50H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STGW50H60DF belongs to ST's H-series IGBT portfolio, engineered specifically for high-efficiency, high-reliability industrial power conversion-including solar inverters, UPS, and motor drives-where field-stop trench technology delivers superior loss trade-offs at 16–100 kHz.

FAQ

What is the maximum gate-emitter voltage rating for STGW50H60DF?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative gate bias below –10 V may cause unintended turn-on due to Miller coupling during high dv/dt events. Gate driver design must ensure rail clamping and fast discharge paths.

Does STGW50H60DF require an external freewheeling diode?

No. STGW50H60DF integrates an ultrafast soft-recovery antiparallel diode rated for 30 A RMS and 120 A non-repetitive surge. The diode shares the same TO-247 package with common emitter connection, eliminating need for external diode in standard half-bridge or full-bridge configurations.

How does the 6 µs short-circuit withstand time translate to system-level protection design?

The 6 µs rating is measured under standardized conditions (V_CC = 400 V, V_GE = 15 V, T_J = 25 °C) and defines the minimum time before destructive failure. System protection must detect overcurrent and initiate desaturation shutdown within ≤4 µs to maintain safe operating area margin, typically using dedicated desat detection circuits with <1 µs propagation delay.

Can STGW50H60DF be paralleled reliably without active current balancing?

Yes. Its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (<±10%) enable stable passive current sharing across up to four devices in parallel. Layout symmetry (matched gate and emitter inductance) and identical thermal mounting are mandatory; no external emitter resistors or active feedback required for balanced static and dynamic loading.

STGW50H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 100 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 50A

Power - Max:: 360 W

Switching Energy:: 890µJ (on), 860µJ (off)

Input Type:: Standard

Gate Charge:: 217 nC

Td (on/off) @ 25°C:: 62ns/178ns

Test Condition:: 400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr):: 55 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW50H60DF FAQ

1.How can I place an order for STGW50H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW50H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW50H60DF reliable?

The price and inventory of STGW50H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW50H60DF is usually 5 days.

3.What payment methods are accepted for STGW50H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW50H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW50H60DF?

STGW50H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW50H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW50H60DF?

For technical support, including STGW50H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW50H60DF requirements.

6.How does Aetrix verify that STGW50H60DF is sourced from the original manufacturer or authorized distributors?

All STGW50H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW50H60DF meets industry standards.

7.What is the process for return or replacement of STGW50H60DF?

All STGW50H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGW50H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW50H60DF part is unused and in its original packaging.

Return procedure for STGW50H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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