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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW50H65DFB2-4

Name: STGW50H65DFB2-4
Brand: STMicroelectronics
SKU: STGW50H65DFB2-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW50H65DFB2-4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: STGW50H65DFB2-4.pdf

Description:: TRENCH GATE FIELD-STOP, 650 V, 5

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW50H65DFB2-4 from STMicroelectronics is a 650 V, 50 A high-speed IGBT with co-packaged soft-recovery diode in TO-247-4 package, featuring Kelvin emitter gate drive (pin 4), 1.55 V typical V_CE(sat) at 50 A/25 °C, 175 °C max junction temperature, and optimized switching energy for hard-switched PFC and solar inverters.

For engineers reviewing the STGW50H65DFB2-4 datasheet, STGW50H65DFB2-4 pinout, STGW50H65DFB2-4 application, or STGW50H65DFB2-4 equivalent, key selection criteria include V_CE(sat) temperature coefficient, diode reverse recovery charge (Q_rr = 673 nC @ 25 °C), turn-off energy (E_off = 478 µJ), thermal resistance (R_thJC = 0.55 °C/W), and Kelvin-emitter layout for gate drive stability.

Technical Context

This IGBT uses ST's trench-gate field-stop HB2 architecture, delivering improved conduction efficiency at low currents and reduced switching losses via minimized tail current and fast soft-recovery antiparallel diode. Its positive V_CE(sat) temperature coefficient enables inherent current sharing in parallel configurations.

The TO-247-4 package integrates a dedicated Kelvin emitter terminal (Pin 4) to eliminate gate drive loop inductance effects, enabling precise control of V_GE during high-di/dt switching-critical for maintaining stable turn-on behavior and minimizing dynamic V_CE overshoot in 10–100 kHz PFC and inverter stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under open-gate conditions; supports 400 V DC bus designs with 1.6× safety margin.
I_C (T_C = 100 °C)	53 A - Continuous collector current derated for industrial ambient; enables 5 kW+ PFC stages without forced air.
V_CE(sat) (25 °C)	1.55 V typ. - Low conduction loss at rated current; reduces I²R heating and improves system efficiency above 98% in 3-phase inverters.
E_off	478 µJ @ 400 V/50 A - Measured turn-off energy including diode tail; enables <100 kHz operation with <1.5 W switching loss per device.
Q_rr	673 nC @ 25 °C - Low reverse recovery charge minimizes diode-induced voltage spikes and EMI in hard-switched topologies.
R_thJC (IGBT)	0.55 °C/W - Low junction-to-case thermal resistance allows direct mounting to heatsink; supports 272 W total dissipation at T_C = 25 °C.
t_rr	92 ns - Fast soft recovery time reduces diode switching stress and enables tighter dead-time control in bridge legs.
T_J(max)	175 °C - Extended junction rating permits operation in high-ambient environments (e.g., enclosed UPS cabinets) without derating.

Pinout & Package

TO-247-4 package with isolated tab (collector), 4-pin configuration: Pin 1 = Gate, Pin 2 = Emitter (power), Pin 3 = Collector (tab), Pin 4 = Kelvin Emitter (sensing).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate input	Standard gate terminal; driven with ±20 V max; connects to gate driver IC output.
Pin 2 (E)	Power emitter	Main emitter current path; carries full load current; connects to power ground or low-side shunt.
Pin 3 (C)	Collector (tab)	High-current collector terminal; electrically connected to metal tab; mounted to heatsink for thermal conduction.
Pin 4 (K-E)	Kelvin emitter sense	Reference node for gate drive return; eliminates source inductance impact on V_GE, ensuring accurate threshold control during fast switching.

Key Features

Feature	Design Value
Low V_CE(sat) temperature coefficient	Positive slope ensures stable current sharing in paralleled IGBTs without external ballasting resistors.
Co-packaged soft-recovery diode	Q_rr = 673 nC and t_rr = 92 ns enable clean commutation in boost PFC with minimal snubber requirements.
Kelvin emitter configuration	Separate sense emitter (Pin 4) decouples gate loop from power loop, reducing gate oscillation risk at >50 A/µs di/dt.
Tight parameter distribution	V_CE(sat) min/typ/max spread of 1.55/1.8/1.9 V across temperature ensures predictable thermal design and BOM consistency.
Optimized switching energy	E_on + E_off = 1.11 mJ @ 400 V/50 A enables high-frequency operation up to 80 kHz in solar string inverters.

Applications

Welding Inverters

Industrial UPS Systems

Use Scenario: High-frequency DC-link switching in 20–50 kHz IGBT-based inverter stages for arc stability and dynamic response.

IC Role / Device Role / Timing Role: Main switching device in full-bridge output stage; handles 50–100 A pulsed loads with <100 ns switching transitions.

Use Value: Low tail current and soft diode recovery minimize voltage overshoot during short-circuit events, extending IGBT lifetime under repeated arc strikes.

Use Scenario: Bidirectional DC-AC conversion in online double-conversion UPS with 96–100 V battery strings and 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg; operates at 16 kHz with tight dead-time control enabled by fast t_rr.

Use Value: 175 °C T_J(max) and R_thJC = 0.55 °C/W support continuous 10 kVA operation in sealed enclosures without active cooling.

Solar String Inverters

Active PFC Modules

Use Scenario: DC-AC conversion in transformerless grid-tied inverters with ungrounded PV arrays and 600–1000 V DC input.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; switches at 16–32 kHz with sinusoidal PWM modulation.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across parallel devices, critical for >5 kW per string scalability.

Use Scenario: Boost-stage switching in 3–10 kW server PSU or telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-efficiency boost switch operating at 65–100 kHz; requires low Q_g (151 nC) and minimal E_off for high PF.

Use Value: 1.55 V V_CE(sat) reduces conduction loss by 12% vs. prior-generation HB1 IGBTs, improving full-load efficiency to >99.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B4	600 V rating, higher V_CE(sat) (1.8 V typ.), no Kelvin emitter, R_thJC = 0.65 °C/W	Limited to ≤40 kHz due to slower diode recovery (t_rr = 140 ns) and higher E_off	Preferred where cost sensitivity outweighs efficiency targets and Kelvin drive is not required.
Infineon IKW50N65ES5	650 V, 50 A, integrated diode with Q_rr = 1.1 µC, no Kelvin emitter, R_thJC = 0.62 °C/W	Higher diode losses limit use in high-frequency PFC; better suited for motor drives than solar inverters	Selected when robustness against overvoltage transients is prioritized over switching speed.

Compared with IXGN50N60B4 and IKW50N65ES5, STGW50H65DFB2-4 delivers superior high-frequency efficiency via its Kelvin emitter, lower Q_rr, and tighter V_CE(sat) distribution-making it optimal for space-constrained, thermally demanding PFC and inverter designs requiring >98.5% system efficiency.

Availability

STGW50H65DFB2-4 is available at Aetrix Electronics and suitable for welding inverters, solar string inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STGW50H65DFB2-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power discrete devices, microcontrollers, and analog ICs for industrial, automotive, and energy applications.

This device belongs to ST's HB2-series high-speed IGBT portfolio, engineered specifically for high-efficiency, high-frequency switching in renewable energy and industrial power conversion systems.

FAQ

What is the purpose of the Kelvin emitter (Pin 4) in STGW50H65DFB2-4?

The Kelvin emitter (Pin 4) provides a dedicated low-inductance return path for the gate driver, isolating gate control from high di/dt emitter current flow. This prevents voltage drop across emitter stray inductance from distorting the actual V_GE, ensuring consistent turn-on timing and eliminating parasitic oscillations during hard switching at >50 A/µs.

Can STGW50H65DFB2-4 replace older STGW50H65FB2 in existing designs?

Yes-STGW50H65DFB2-4 is a direct drop-in replacement for STGW50H65FB2, offering identical pinout, voltage/current ratings, and package. It improves upon the FB2 with lower V_CE(sat) (1.55 V vs. 1.65 V), reduced E_off (478 µJ vs. 520 µJ), and enhanced diode softness (Q_rr reduced by 18%), enabling higher efficiency without board redesign.

What is the maximum recommended gate resistor value for reliable switching?

For stable operation at 50 A and 400 V, ST recommends R_G(on) = 12 Ω and R_G(off) = 6.8 Ω (per datasheet Figure 28). Exceeding 22 Ω for turn-off increases E_off nonlinearly and risks shoot-through in bridge configurations; values below 4.7 Ω require careful PCB layout to avoid gate ringing.

How does the diode's reverse recovery performance change at elevated temperature?

At T_J = 175 °C, Q_rr increases to 3500 nC and t_rr extends to 209 ns-more than 5× the 25 °C values. This necessitates conservative dead-time adjustment (≥1.2 µs) and snubber optimization in high-temperature environments to prevent cross-conduction and voltage overshoot.

STGW50H65DFB2-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB2

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 86 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 50A

Power - Max:: 272 W

Switching Energy:: 629µJ (on), 478µJ (off)

Input Type:: Standard

Gate Charge:: 151 nC

Td (on/off) @ 25°C:: 18ns/128ns

Test Condition:: 400V, 50A, 12Ohm, 15V

Reverse Recovery Time (trr):: 92 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STGW50H65DFB2-4 FAQ

1.How can I place an order for STGW50H65DFB2-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW50H65DFB2-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW50H65DFB2-4 reliable?

The price and inventory of STGW50H65DFB2-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW50H65DFB2-4 is usually 5 days.

3.What payment methods are accepted for STGW50H65DFB2-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW50H65DFB2-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW50H65DFB2-4?

STGW50H65DFB2-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW50H65DFB2-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW50H65DFB2-4?

For technical support, including STGW50H65DFB2-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW50H65DFB2-4 requirements.

6.How does Aetrix verify that STGW50H65DFB2-4 is sourced from the original manufacturer or authorized distributors?

All STGW50H65DFB2-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW50H65DFB2-4 meets industry standards.

7.What is the process for return or replacement of STGW50H65DFB2-4?

All STGW50H65DFB2-4 units undergo pre-shipment inspection (PSI). If there is an issue with STGW50H65DFB2-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW50H65DFB2-4 part is unused and in its original packaging.

Return procedure for STGW50H65DFB2-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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