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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW50HF60SD

Name: STGW50HF60SD
Brand: STMicroelectronics
SKU: STGW50HF60SD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW50HF60SD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW50HF60SD.pdf

Description:: IGBT 600V 110A 284W TO247

Quantity:: RFQ Add To RFQ list

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Inventory:7,114

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Product details

Overview

STGW50HF60SD from STMicroelectronics is a 60 A, 600 V very low drop IGBT with integrated soft and ultra-fast recovery antiparallel diode in TO-247 package. It delivers 1.15 V typical V_CE(sat) at 30 A/25°C, 67 ns typical reverse recovery time (t_rr) at 25°C, and 0.25 mJ turn-on switching energy - optimized for low-frequency switching in PV inverters and UPS systems operating at power factor ≤ 1.

For engineers reviewing the STGW50HF60SD datasheet, STGW50HF60SD pinout, STGW50HF60SD application, or STGW50HF60SD equivalent, key selection criteria include its low conduction loss, soft diode recovery behavior, thermal resistance (R_thj-case = 0.44 °C/W for IGBT), and co-packaged diode's 2.8 V forward voltage at 30 A/125°C.

Technical Context

This IGBT employs ST's advanced planar technology to minimize both on-state voltage drop and turn-off losses. Its gate threshold voltage (V_GE(th)) ranges from 3.5 V to 5.7 V, and it supports ±20 V gate-emitter voltage rating with 25 S typical transconductance (g_fs) at 30 A.

The integrated diode exhibits soft recovery with 4 A peak reverse recovery current (I_RRM) and 140 nC reverse recovery charge (Q_rr) at 25°C, enabling reduced EMI and voltage overshoot in hard-switched inductive topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - maximum blocking voltage under zero gate bias, suitable for 400 V DC bus applications with margin
I_C @ T_C=100°C	60 A - continuous collector current derated for thermal management in enclosed enclosures
V_CE(sat) @ 30 A/25°C	1.15 V - low conduction loss enabling high efficiency in low-frequency (<5 kHz) switching
t_rr @ 30 A/25°C	67 ns - ultra-fast, soft diode recovery minimizing snubber stress and dv/dt-induced false triggering
E_off @ 30 A/25°C	4.2 mJ - limited turn-off loss due to controlled tail current, reducing heatsink requirements
R_thj-case (IGBT)	0.44 °C/W - enables direct mounting to heatsinks without thermal interface material degradation concerns
Q_g @ 480 V	200 nC - gate charge level requiring robust 15 V gate driver with ≥2 A peak sourcing/sinking capability

Pinout & Package

TO-247 package: 3-terminal through-hole outline with isolated collector tab (Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter). Mounting hole ∅3.6 mm centered on collector tab for mechanical and thermal attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 15 V logic-level drive; requires low-inductance gate loop to suppress oscillation during fast dV/dt transitions
Pin 2 (Collector)	High-side power output	Electrically isolated metal tab; serves as primary heat path and high-current return node for diode and IGBT
Pin 3 (Emitter)	Power ground reference	Common emitter node for IGBT and antiparallel diode; must be low-impedance to minimize shoot-through risk

Key Features

Feature	Design Value
Very low V_CE(sat)	1.15 V @ 30 A/25°C reduces conduction loss by >30% vs standard 600 V IGBTs in same package
Soft ultra-fast diode	67 ns t_rr with soft recovery waveform minimizes voltage spikes and EMI in unclamped inductive loads
High current capability	110 A continuous @ T_C=25°C supports short-term overload handling in UPS hold-up cycles
Low switching off loss	4.2 mJ E_off @ 30 A enables operation at 2–5 kHz without forced air cooling

Applications

PV Inverter DC-AC Stage

UPS Inverter Bridge

Use Scenario: Single-phase or three-phase string inverter stage converting 400–600 V DC to 230 V AC at 50/60 Hz with reactive power support.

IC Role / Device Role / Timing Role: Low-frequency (≤5 kHz) half-bridge switch with integrated anti-parallel diode conducting freewheeling current during dead-time.

Use Value: 1.15 V V_CE(sat) and soft diode reduce thermal stress and eliminate need for external snubbers in transformerless designs.

Use Scenario: Online double-conversion UPS inverter delivering clean sine-wave output during mains failure with <10 ms transfer time.

IC Role / Device Role / Timing Role: Full-bridge IGBT switch handling 60 A RMS load current with bidirectional conduction via co-pack diode during battery discharge phase.

Use Value: 60 A rated current at 100°C case temperature ensures sustained 5 kVA output without derating in compact chassis.

Industrial Motor Drive Output Stage

Energy Storage System Bi-directional Converter

Use Scenario: 7.5 kW induction motor drive using six-step or low-switching-frequency PWM for fan/pump control.

IC Role / Device Role / Timing Role: Output stage switch operating below 2 kHz with high peak current demand during startup torque surge.

Use Value: 130 A pulsed collector current (I_CP) supports 3× motor locked-rotor current without device failure.

Use Scenario: Bi-directional DC-DC converter interfacing 48 V battery bank with 400 V DC bus in microgrid storage systems.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in buck-boost topology, leveraging soft diode for reverse conduction during regeneration.

Use Value: 140 nC Q_rr and 4 A I_RRM limit reverse recovery loss to <5% of total switching loss at 3 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	Higher V_CE(sat) (1.7 V @ 30 A), slower diode (t_rr = 120 ns), higher E_off (6.8 mJ)	Less suitable for soft-switching topologies; requires larger heatsink in same thermal envelope	Select when cost sensitivity outweighs efficiency targets and layout allows added snubber components
Infineon IKW50N60T	Lower gate charge (140 nC), but higher V_CE(sat) (1.45 V @ 30 A), no soft diode (hard recovery)	Requires external soft-recovery diode or active clamping; increases BOM count and layout complexity	Prefer where gate drive simplicity is prioritized over diode integration and EMI performance

Compared with IXGN50N60B3 and IKW50N60T, STGW50HF60SD provides superior conduction efficiency and intrinsic EMI suppression via its soft diode - critical for certified PV inverter designs where conducted emissions limits constrain filter size and cost.

Availability

STGW50HF60SD is available at Aetrix Electronics and suitable for PV inverter design, UPS inverter bridge construction, and industrial motor drive output stages requiring stable component supply across multi-year production cycles.

Supply support for STGW50HF60SD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and power applications.

STGW50HF60SD belongs to ST's High-Voltage Power Switches product line, engineered specifically for high-efficiency, low-frequency power conversion in renewable energy and backup power systems where thermal performance and diode softness are decisive.

FAQ

What is the maximum gate-emitter voltage rating for STGW50HF60SD?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks gate oxide damage, while negative bias below –10 V offers no additional noise immunity benefit and may increase gate drive losses.

Can STGW50HF60SD operate reliably at junction temperatures up to 150°C?

Yes - its specified T_j range is –55°C to +150°C, and all electrical characteristics (including V_CE(sat), t_rr, and E_off) are guaranteed up to 150°C. Thermal design must ensure R_thj-case × P_diss + T_C ≤ 150°C under worst-case load conditions.

Is the antiparallel diode in STGW50HF60SD electrically isolated from the IGBT die?

No - the diode is monolithically integrated in the same silicon die and shares the collector terminal (Pin 2). Its cathode connects internally to the IGBT collector, and its anode connects to the emitter terminal (Pin 3), forming a true co-pack configuration with matched thermal coupling.

Does STGW50HF60SD require a negative gate voltage for safe turn-off?

No - it is fully compatible with 0 V / +15 V gate drive. However, applying –5 V to –10 V during turn-off improves noise immunity in high-dv/dt environments and accelerates turn-off by increasing dI_C/dt, though not required for functional operation per datasheet specifications.

STGW50HF60SD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 110 A

Current - Collector Pulsed (Icm):: 130 A

Vce(on) (Max) @ Vge, Ic:: 1.45V @ 15V, 30A

Power - Max:: 284 W

Switching Energy:: 250µJ (on), 4.2mJ (off)

Input Type:: Standard

Gate Charge:: 200 nC

Td (on/off) @ 25°C:: 50ns/220ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 67 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW50HF60SD FAQ

1.How can I place an order for STGW50HF60SD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW50HF60SD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW50HF60SD reliable?

The price and inventory of STGW50HF60SD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW50HF60SD is usually 5 days.

3.What payment methods are accepted for STGW50HF60SD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW50HF60SD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW50HF60SD?

STGW50HF60SD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW50HF60SD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW50HF60SD?

For technical support, including STGW50HF60SD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW50HF60SD requirements.

6.How does Aetrix verify that STGW50HF60SD is sourced from the original manufacturer or authorized distributors?

All STGW50HF60SD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW50HF60SD meets industry standards.

7.What is the process for return or replacement of STGW50HF60SD?

All STGW50HF60SD units undergo pre-shipment inspection (PSI). If there is an issue with STGW50HF60SD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW50HF60SD part is unused and in its original packaging.

Return procedure for STGW50HF60SD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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