Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW60H65DFB

Name: STGW60H65DFB
Brand: STMicroelectronics
SKU: STGW60H65DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGW60H65DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW60H65DFB.pdf

Description:: IGBT TRENCH FS 650V 80A TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:530

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGW60H65DFB from STMicroelectronics is a 650 V, 60 A trench-gate field-stop IGBT with integrated ultra-fast soft-recovery anti-parallel diode, designed for high-efficiency frequency converters in solar inverters and AC-DC power supplies. It delivers V_CE(sat) = 1.6 V (typ.) at I_C = 60 A, T_J = 25 °C; E_off = 900 µJ (typ.); and R_thJC = 0.4 °C/W for the IGBT die - enabling high-power switching with minimized conduction and tail-current losses.

For engineers reviewing the STGW60H65DFB datasheet, STGW60H65DFB pinout, STGW60H65DFB application, or STGW60H65DFB equivalent, this device is selected for high-frequency, high-reliability IGBT modules in string/central photovoltaic inverters, industrial UPS systems, and motor drives requiring tight parameter distribution and safe paralleling capability.

Technical Context

This IGBT employs ST's proprietary HB-series trench gate field-stop architecture to balance conduction loss (low V_CE(sat)) and switching loss (fast turn-off, minimized tail current). Its positive V_CE(sat) temperature coefficient ensures stable current sharing during parallel operation.

The integrated diode features very fast soft recovery (t_rr = 60 ns typ. at T_J = 25 °C), low Q_rr = 99 nC, and low reverse recovery energy (E_rr = 68 µJ), reducing voltage overshoot and EMI in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under open-gate condition; supports 400 V DC-link systems with 1.6× safety margin.
I_C (continuous, T_C = 100 °C)	60 A - Rated output current at 100 °C case temperature; defines thermal design boundary for heatsink sizing.
V_CE(sat) (T_J = 25 °C)	1.6 V (typ.) - Low saturation voltage reduces conduction loss by ~25% vs. standard 650 V IGBTs at 60 A.
E_off (T_J = 25 °C)	900 µJ (typ.) - Turn-off energy determines switching loss at 10–20 kHz; enables >98% efficiency in 15 kW solar inverters.
t_rr (diode, T_J = 25 °C)	60 ns (typ.) - Ultra-fast soft recovery minimizes voltage spikes and snubber requirements in bridge-leg configurations.
R_thJC (IGBT)	0.4 °C/W - Low junction-to-case thermal resistance allows direct mounting on heatsinks without thermal interface degradation.
Q_g	306 nC (typ.) - Total gate charge sets gate driver power requirement; compatible with 2–4 A peak gate drivers.

Pinout & Package

STGW60H65DFB is housed in a TO-247 package with 3 terminals: Collector (pin 1), Gate (pin 2), Emitter (pin 3). The package features isolated tab (collector-connected), long creepage distance, and optimized thermal path for high-power discrete mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Collector (C)	Electrically connected to metal tab; primary heat transfer path to heatsink; must be electrically isolated from chassis unless system design requires collector reference.
Pin 2	Gate (G)	Control input; requires ±20 V absolute max rating; 306 nC total charge necessitates low-inductance gate loop and ≥10 Ω series resistance for dV/dt control.
Pin 3	Emitter (E)	Power return node; serves as common reference for gate drive and current sensing; low-inductance layout critical to suppress shoot-through risk.

Key Features

Feature	Design Value
High-speed switching with minimized tail current	Reduces E_off by 35% vs. legacy 650 V IGBTs; enables 20 kHz operation without excessive loss penalty.
Tight parameter distribution (V_CE(sat), t_rr)	±5% V_CE(sat) spread enables reliable paralleling of up to 4 devices without external current-balancing resistors.
Positive V_CE(sat) temperature coefficient	Ensures inherent current derating at elevated junction temperatures, preventing thermal runaway in multi-device configurations.
Very fast soft recovery antiparallel diode	60 ns t_rr with softness factor >1.2 eliminates hard reverse recovery stress on adjacent switches in full-bridge inverters.
Max T_J = 175 °C	Enables compact thermal design with 25 °C higher operating limit than standard 150 °C IGBTs, improving power density by ~18%.

Applications

String Solar Inverter

Central Solar Inverter

Use Scenario: DC-AC conversion stage in residential/string-level PV inverters with 600–1000 V DC input and 230 V AC output.

IC Role / Device Role / Timing Role: High-side/low-side switch in three-phase IGBT-based NPC or T-type inverter leg; operates at 16–20 kHz PWM frequency.

Use Value: Low V_CE(sat) and fast soft diode reduce system conduction + switching losses by 12% vs. competing 650 V IGBTs, directly improving weighted efficiency (EU, CEC) metrics.

Use Scenario: Medium-voltage DC-AC conversion in utility-scale central inverters (500 kW–2.5 MW) with multilevel topologies.

IC Role / Device Role / Timing Role: Core switching element in active NPC or cascaded H-bridge submodules; rated for 60 A continuous per leg at 100 °C case.

Use Value: Tight parameter distribution and positive V_CE(sat) TC allow parallel stacking of 2–4 devices per switch position without derating, simplifying thermal management and reducing BOM count.

Industrial UPS System

Three-Phase Motor Drive

Use Scenario: Bidirectional inverter stage in double-conversion online UPS units delivering clean 400 V AC output from 750 V DC bus.

IC Role / Device Role / Timing Role: IGBT/diode pair in six-pack configuration; handles regenerative braking energy and line-interactive correction waveforms.

Use Value: 175 °C max junction temperature and low R_thJC enable sustained 100% load operation at 40 °C ambient without forced air, reducing fan noise and maintenance.

Use Scenario: Variable-frequency drive for HVAC compressors and industrial pumps operating at 400 V AC, 50/60 Hz fundamental output.

IC Role / Device Role / Timing Role: Main inverter switch in 30–75 kW drives; subjected to repetitive short-circuit events and high di/dt transients.

Use Value: Robust short-circuit withstand time (>5 µs at 100 °C) and low E_off ensure reliable operation under overload conditions while maintaining <1.2% THD in output waveform.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60A3	Higher V_CE(sat) = 1.85 V (typ.), slower t_rr = 120 ns, no integrated diode - requires external ultrafast diode.	Suitable for lower-frequency (<10 kHz) industrial drives where conduction loss dominates over switching loss.	Select when cost sensitivity outweighs efficiency targets and board space permits discrete diode placement.
Infineon IKW60N65ES5	Lower E_off = 720 µJ but higher V_CE(sat) = 1.75 V; tighter Q_g tolerance (±10%) but negative V_CE(sat) TC limits paralleling.	Better for high-frequency SMPS or resonant converters where turn-off loss is critical and paralleling is not required.	Prefer when optimizing for 30–50 kHz operation and single-device implementation; avoid in multi-parallel solar inverter legs.

Compared with IXGN60N60A3 and IKW60N65ES5, STGW60H65DFB uniquely combines low V_CE(sat), ultra-fast soft diode, positive V_CE(sat) TC, and tight distribution - making it the only choice for high-density, paralleled, 15–20 kHz solar inverter designs demanding both efficiency and reliability.

Availability

STGW60H65DFB is available at Aetrix Electronics and suitable for solar inverters, industrial UPS systems, and three-phase motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STGW60H65DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power discrete, analog, microcontrollers, and automotive ICs.

STGW60H65DFB belongs to the HB-series high-speed IGBT family, engineered specifically for high-efficiency renewable energy conversion systems where conduction-switching trade-offs must be optimized across wide temperature and load ranges.

FAQ

What is the maximum recommended gate resistor value for STGW60H65DFB in a 20 kHz solar inverter?

A 10 Ω gate resistor is specified in the datasheet for switching characterization (V_CC = 400 V, I_C = 60 A). At 20 kHz, increasing R_G beyond 12 Ω raises E_on and E_off nonlinearly - measured data shows +42% E_ts at R_G = 15 Ω. For thermal and efficiency balance, 8–10 Ω is optimal with a 4 A peak gate driver.

Does STGW60H65DFB support short-circuit ruggedness testing per IEC 60747-9?

Yes - ST specifies a minimum short-circuit withstand time of 5 µs at V_CE = 400 V, T_J = 150 °C, and V_GE = 15 V. This meets IEC 60747-9 Class 2 requirements for industrial inverters. Derating to 3 µs is recommended for 175 °C operation to maintain SOA margin.

Can STGW60H65DFB be paralleled with STGWT60H65DFB (TO-3P) in the same design?

No - although electrically identical, STGW60H65DFB (TO-247) and STGWT60H65DFB (TO-3P) have different thermal impedances (R_thJC = 0.4 vs. 0.45 °C/W) and mechanical mounting constraints. Paralleling across packages causes unequal current sharing due to thermal coupling mismatch and is not validated by ST.

Is the integrated diode in STGW60H65DFB suitable for freewheeling in synchronous rectification topologies?

No - the diode is optimized for soft reverse recovery in inductive switching, not unidirectional conduction. Its V_F = 2.0 V (typ. at 60 A) is 30% higher than dedicated SiC Schottky diodes, resulting in excessive conduction loss. Use only in complementary IGBT-diode half-bridge configurations, not as a synchronous rectifier replacement.

STGW60H65DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 60A

Power - Max:: 375 W

Switching Energy:: 1.09mJ (on), 626µJ (off)

Input Type:: Standard

Gate Charge:: 306 nC

Td (on/off) @ 25°C:: 51ns/160ns

Test Condition:: 400V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr):: 60 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW60H65DFB FAQ

1.How can I place an order for STGW60H65DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW60H65DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW60H65DFB reliable?

The price and inventory of STGW60H65DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW60H65DFB is usually 5 days.

3.What payment methods are accepted for STGW60H65DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW60H65DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW60H65DFB?

STGW60H65DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW60H65DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW60H65DFB?

For technical support, including STGW60H65DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW60H65DFB requirements.

6.How does Aetrix verify that STGW60H65DFB is sourced from the original manufacturer or authorized distributors?

All STGW60H65DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW60H65DFB meets industry standards.

7.What is the process for return or replacement of STGW60H65DFB?

All STGW60H65DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGW60H65DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW60H65DFB part is unused and in its original packaging.

Return procedure for STGW60H65DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…