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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW60H65F

Name: STGW60H65F
Brand: STMicroelectronics
SKU: STGW60H65F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW60H65F

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW60H65F.pdf

Description:: IGBT 650V 120A 360W TO247

Quantity:: RFQ Add To RFQ list

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Inventory:9,677

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Product details

Overview

STGW60H65F from STMicroelectronics is a 60 A, 650 V field-stop trench-gate IGBT optimized for high-efficiency, high-frequency power conversion. It delivers 1.9 V V_CE(sat) at 60 A/25 °C, 6 µs short-circuit withstand time at 400 V, and 0.35 °C/W junction-to-case thermal resistance-enabling compact, reliable designs in photovoltaic inverters and UPS systems.

For engineers reviewing the STGW60H65F datasheet, STGW60H65F pinout, STGW60H65F application, or STGW60H65F equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, and low R_thJC for high-power density thermal management.

Technical Context

This IGBT employs ST's proprietary field-stop trench gate structure to balance conduction and switching losses-achieving 0.75 mJ E_on and 1.05 mJ E_off at 400 V, 60 A, 15 V gate drive. Its 217 nC total gate charge and 7150 pF input capacitance support controlled turn-on with 65 ns typical delay time (T_d(on)) and 30 ns rise time (t_r) under 10 Ω gate resistance.

The device features a slightly positive V_CE(sat) temperature coefficient (1.9 V @ 25 °C → 2.1 V @ 125 °C), enabling stable current sharing in parallel configurations. Its 6 µs short-circuit rating at V_GE = 15 V and robust RBSOA ensure operation within safe limits during fault conditions in industrial converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - supports DC bus voltages up to 400 V with ≥1.6× safety margin in PV and UPS applications
I_C (T_C = 100 °C)	60 A - continuous output current capability at elevated heatsink temperatures
V_CE(sat)	1.9 V @ 60 A, 25 °C - low conduction loss enabling >98% efficiency in 10–50 kHz converters
t_SC	6 µs @ V_CC = 400 V - enables fast protection response without desaturation circuit complexity
R_thJC	0.35 °C/W - allows direct mounting to heatsinks with minimal thermal interface resistance
Q_g	217 nC - defines gate driver power requirement and influences switching speed vs. EMI trade-off
E_ts	1.80 mJ @ 25 °C - total switching energy per cycle, critical for thermal design at 20+ kHz operation

Pinout & Package

Supplied in TO-247 package with isolated metal tab (collector-connected), this IGBT uses standard three-terminal configuration: Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 15 V ±20 V gate drive; requires 217 nC charge for full enhancement
Pin 2 (Collector)	High-side power terminal	Connected to internal die backside metallization and external heatsink; electrically tied to metal tab
Pin 3 (Emitter)	Reference and current return	Serves as source of gate drive return path and emitter output node; must be low-inductance layout

Key Features

Feature	Design Value
Field-stop trench gate structure	Reduces tail current and switching losses while maintaining rugged short-circuit capability
Positive V_CE(sat) temperature coefficient	Enables inherent current balancing in multi-device parallel configurations without external ballasting
Tight parameter distribution	±5% V_CE(sat) variation across production lot-reduces system-level derating requirements
Low R_thJC (0.35 °C/W)	Permits higher power density by reducing junction temperature rise per watt dissipated
6 µs short-circuit withstand	Supports use with basic overcurrent detection (e.g., desat + comparator) instead of complex active clamping

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Three-phase string or central inverters converting DC from solar arrays to grid-synchronized AC at 16–50 kHz.

IC Role / Device Role / Timing Role: Main switching device in two-level or NPC inverter legs handling up to 15 kW per module.

Use Value: 1.9 V V_CE(sat) and 1.80 mJ E_ts enable >98.5% peak efficiency while maintaining 6 µs fault tolerance.

Use Scenario: Online double-conversion UPS systems delivering clean 50/60 Hz output during mains failure with battery backup.

IC Role / Device Role / Timing Role: Inverter-stage switch operating in PWM mode at 8–20 kHz to synthesize sinusoidal output waveform.

Use Value: Tight V_CE(sat) distribution ensures balanced load sharing across parallel IGBT modules during high-current battery discharge.

Welding Equipment

Power Factor Correction

Use Scenario: IGBT-based inverter welders generating high-current DC or pulsed output (10–100 kHz) for arc stability and spatter control.

IC Role / Device Role / Timing Role: Primary switching element in resonant or hard-switched DC-link choppers driving transformer-primary side.

Use Value: 240 A pulsed collector rating and 0.35 °C/W R_thJC support intermittent 300 A peak currents with minimal thermal cycling stress.

Use Scenario: Active front-end PFC stages in industrial motor drives and server PSUs operating at 20–100 kHz to meet EN 61000-3-2 harmonic limits.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC topology handling full line-input power.

Use Value: Low 7150 pF C_ies and 217 nC Q_g allow precise gate timing control for high PF (>0.99) and low THD across universal input range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60A3	600 V rating, 2.2 V V_CE(sat), 0.45 °C/W R_thJC, 10 µs t_SC	Higher conduction loss; better short-circuit robustness but lower thermal efficiency	Select when fault immunity outweighs efficiency targets, e.g., in unattended industrial equipment
Infineon IKW60N65ES5	650 V rating, 1.85 V V_CE(sat), 0.33 °C/W R_thJC, 5 µs t_SC	Marginally lower saturation voltage and thermal resistance, but reduced short-circuit margin	Prefer for highest efficiency in thermally constrained designs where protection circuits are fully implemented

Compared with IXGN60N60A3 and IKW60N65ES5, STGW60H65F offers the optimal balance: lower V_CE(sat) than IXYS, higher t_SC than Infineon, and industry-leading R_thJC-making it ideal for cost-sensitive, high-volume 10–30 kW converters requiring both efficiency and reliability.

Availability

STGW60H65F is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for STGW60H65F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This IGBT belongs to ST's H-series high-speed trench gate portfolio, engineered specifically for high-frequency, high-efficiency power conversion in renewable energy and industrial motor control applications.

FAQ

What is the maximum gate-emitter voltage rating for STGW60H65F?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller effect during high di/dt events. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers.

Does STGW60H65F include an integrated anti-parallel diode?

No, STGW60H65F is a single-die IGBT in TO-247 package with no co-packaged diode. External freewheeling diodes-such as STTH120R04DJF or SiC Schottky types like STPSC1206D-are required for inductive load commutation. The datasheet test circuits explicitly specify external diode usage for switching energy measurements.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases from 1.9 V at 25 °C to 2.1 V at 125 °C-a +0.2 V shift confirming a slightly positive temperature coefficient. This behavior improves current sharing in parallel configurations, as hotter devices conduct less current, preventing thermal runaway without external emitter resistors or active current balancing.

What gate resistance value is recommended for optimal switching performance?

A 10 Ω gate resistor is used in all datasheet switching characterization (E_on/E_off, t_d(on), t_f). Lower values (5–8 Ω) reduce switching time but increase EMI and gate driver stress; higher values (15–22 Ω) suppress ringing and dv/dt-induced turn-on but raise switching losses. Layout-dependent parasitic inductance must be minimized regardless of R_G choice.

STGW60H65F Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 120 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 1.9V @ 15V, 60A

Power - Max:: 360 W

Switching Energy:: 750µJ (on), 1.05mJ (off)

Input Type:: Standard

Gate Charge:: 217 nC

Td (on/off) @ 25°C:: 65ns/180ns

Test Condition:: 400V, 60A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW60H65F FAQ

1.How can I place an order for STGW60H65F through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW60H65F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW60H65F reliable?

The price and inventory of STGW60H65F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW60H65F is usually 5 days.

3.What payment methods are accepted for STGW60H65F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW60H65F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW60H65F?

STGW60H65F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW60H65F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW60H65F?

For technical support, including STGW60H65F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW60H65F requirements.

6.How does Aetrix verify that STGW60H65F is sourced from the original manufacturer or authorized distributors?

All STGW60H65F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW60H65F meets industry standards.

7.What is the process for return or replacement of STGW60H65F?

All STGW60H65F units undergo pre-shipment inspection (PSI). If there is an issue with STGW60H65F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW60H65F part is unused and in its original packaging.

Return procedure for STGW60H65F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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