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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW60V60DF

Name: STGW60V60DF
Brand: STMicroelectronics
SKU: STGW60V60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW60V60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW60V60DF.pdf

Description:: IGBT 600V 80A 375W TO247

Quantity:: RFQ Add To RFQ list

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Inventory:2,828

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Product details

Overview

STGW60V60DF from STMicroelectronics is a 650 V, 60 A trench-gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-247 package. It delivers V_CE(sat) = 1.85 V (typ.) at I_C = 60 A and T_J = 25 °C, features tail-less switching off, positive V_CE(sat) temperature coefficient, and R_thJC = 0.4 °C/W (IGBT), enabling high-efficiency operation in photovoltaic inverters and high-frequency power converters.

For engineers reviewing the STGW60V60DF datasheet, STGW60V60DF pinout, STGW60V60DF application, or STGW60V60DF equivalent, this device supports design of high-density, thermally constrained systems requiring safe paralleling, low conduction loss, fast switching, and robust diode recovery performance at up to 175 °C junction temperature.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure optimized for very high frequency converters (up to 100 kHz), balancing conduction and switching losses. Its positive V_CE(sat) temperature coefficient ensures current sharing stability during parallel operation, while tight parameter distribution minimizes binning requirements.

The integrated diode exhibits soft reverse recovery (t_rr = 74 ns typ. at T_J = 25 °C) and low Q_rr = 703 nC, reducing voltage overshoot and EMI. Thermal resistance is split between IGBT (R_thJC = 0.4 °C/W) and diode (R_thJC = 1.14 °C/W), enabling independent thermal modeling of both elements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage under gate-open condition; supports 400 V DC-link designs with 50 % safety margin.
I_C (T_C = 100 °C)	60 A - Continuous collector current at 100 °C case temperature; defines usable current in forced-air-cooled industrial enclosures.
V_CE(sat) (I_C = 60 A, T_J = 25 °C)	1.85 V - Low saturation voltage reduces conduction loss to ~111 W at full load, critical for thermal management.
E_off (T_J = 175 °C)	0.8 mJ - Turn-off energy at max junction temperature; enables efficient hard-switching at >20 kHz with minimal snubber burden.
t_rr (I_F = 60 A, T_J = 25 °C)	74 ns - Ultra-fast soft recovery time limits diode-induced voltage spikes and reduces stress on snubber components.
R_thJC (IGBT)	0.4 °C/W - Low junction-to-case thermal resistance allows direct mounting to heatsinks without thermal interface degradation.
Q_g	334 nC - Total gate charge determines driver strength requirement; compatible with standard 2–4 A peak gate drivers.

Pinout & Package

TO-247 package with 3-pin configuration: Pin 1 = Gate (G), Pin 2 = Collector (C, tab-connected), Pin 3 = Emitter (E). The metal tab is electrically connected to the collector, requiring insulated mounting hardware when used in non-isolated topologies.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT turn-on/turn-off; requires ±20 V absolute max gate-emitter voltage and 334 nC total charge for full switching.
Pin 2 (C)	Collector terminal / Mounting tab	High-side power input node; electrically tied to metal tab-must be isolated from heatsink unless system ground reference permits.
Pin 3 (E)	Emitter terminal	Low-side return path for main current and gate drive reference; layout must minimize inductance to suppress voltage spikes during switching.

Key Features

Feature	Design Value
Tail-less switching off	Eliminates slow current decay phase, reducing E_off by ~30 % vs. standard IGBTs and enabling cleaner hard-switching waveforms.
Positive V_CE(sat) tempco	Ensures inherent current sharing in parallel configurations without external current-sensing or active balancing circuits.
Tight parameter distribution	Reduces need for binning or derating in multi-device modules; improves yield in high-volume power stage assembly.
Very fast soft recovery diode	74 ns t_rr with softness factor >1.0 minimizes dV/dt-induced false triggering and EMI generation in bridge legs.
Max T_J = 175 °C	Enables compact thermal design with reduced heatsink mass and extended lifetime under transient overload conditions.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC at 20–50 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in NPC or T-type three-level topologies handling 5–10 kW per phase.

Use Value: Low V_CE(sat) and fast diode recovery reduce conduction and switching losses, improving conversion efficiency above 98.5 % at nominal load.

Use Scenario: Online double-conversion UPS systems delivering clean sine-wave output during mains failure with <10 ms transfer time.

IC Role / Device Role / Timing Role: Inverter-stage switch in full-bridge topology operating at 16–25 kHz with strict THD and reliability requirements.

Use Value: Safe paralleling capability and 175 °C rating support redundant power stages and extended runtime under elevated ambient temperatures.

Welding Equipment

Power Factor Correction (PFC)

Use Scenario: IGBT-based inverter welders generating high-current DC or pulsed output for MIG/TIG processes with dynamic load response.

IC Role / Device Role / Timing Role: Primary switching element in resonant or hard-switched DC-link choppers delivering 200–600 A output.

Use Value: Tail-less turn-off and low thermal resistance enable high-duty-cycle operation without thermal runaway during arc striking and short-circuit events.

Use Scenario: Active boost PFC front-end in industrial motor drives and server PSUs operating at 65–100 kHz with >99 % PF and <5 % THD.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) topology handling 3–6 kW per phase.

Use Value: Tight V_CE(sat) distribution ensures consistent current sharing across interleaved phases, simplifying control loop tuning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60A3	600 V/60 A, V_CE(sat) = 2.1 V (typ.), t_rr = 120 ns, R_thJC = 0.5 °C/W	Higher conduction loss and slower diode recovery increase switching losses in >30 kHz designs.	Preferred where cost sensitivity outweighs efficiency targets and thermal margin is ample.
Infineon IKW60N60ES5	600 V/60 A, V_CE(sat) = 1.75 V (typ.), t_rr = 85 ns, R_thJC = 0.35 °C/W, no integrated diode	Requires external ultrafast diode; superior conduction but adds layout complexity and BOM count.	Chosen when discrete diode selection is needed for custom recovery tuning or reliability validation.

Compared with IXGN60N60A3 and IKW60N60ES5, STGW60V60DF uniquely combines low V_CE(sat), ultra-fast soft diode, and built-in safe paralleling-making it optimal for space-constrained, high-efficiency 30–100 kHz converters where integration and thermal predictability are prioritized.

Availability

STGW60V60DF is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial production programs.

Supply support for STGW60V60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's V-series IGBT portfolio, engineered specifically for very high frequency converters where minimizing combined conduction and switching losses is essential to achieving >98 % system efficiency.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 4.7 Ω for characterization at T_J = 175 °C. Using R_G > 10 Ω increases switching times significantly-td(off) rises to ~350 ns and E_off exceeds 1.2 mJ-risking thermal overstress in high-frequency operation. For 20–50 kHz applications, 3.3–6.8 Ω is optimal to balance loss, EMI, and driver loading.

Can STGW60V60DF be safely paralleled without current-sharing resistors?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5 % typical) enable stable current sharing. Test data shows <10 % current imbalance at 60 A total load with matched PCB layout and gate drive. No external emitter resistors are required, though symmetrical gate routing remains critical.

How does the integrated diode perform at elevated junction temperature?

At T_J = 175 °C, the diode's t_rr increases to 131 ns and Q_rr rises to 2816 nC-more than 3× the 25 °C values-but retains soft recovery (dI_rr/dt = 404 A/µs). This behavior is fully characterized and factored into the device's SOA curves, supporting reliable operation up to rated junction temperature.

Is the TO-247 package lead-free and RoHS-compliant?

Yes-STGW60V60DF is supplied in ECOPACK2-compliant TO-247 packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries the "ECOPACK2" marking and is qualified for lead-free reflow soldering per JEDEC J-STD-020, with peak temperature tolerance up to 260 °C.

STGW60V60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 60A

Power - Max:: 375 W

Switching Energy:: 750µJ (on), 550µJ (off)

Input Type:: Standard

Gate Charge:: 334 nC

Td (on/off) @ 25°C:: 60ns/208ns

Test Condition:: 400V, 60A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 74 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW60V60DF FAQ

1.How can I place an order for STGW60V60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW60V60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW60V60DF reliable?

The price and inventory of STGW60V60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW60V60DF is usually 5 days.

3.What payment methods are accepted for STGW60V60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW60V60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW60V60DF?

STGW60V60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW60V60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW60V60DF?

For technical support, including STGW60V60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW60V60DF requirements.

6.How does Aetrix verify that STGW60V60DF is sourced from the original manufacturer or authorized distributors?

All STGW60V60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW60V60DF meets industry standards.

7.What is the process for return or replacement of STGW60V60DF?

All STGW60V60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGW60V60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW60V60DF part is unused and in its original packaging.

Return procedure for STGW60V60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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