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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW60V60F

Name: STGW60V60F
Brand: STMicroelectronics
SKU: STGW60V60F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW60V60F

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW60V60F.pdf

Description:: IGBT 600V 80A 375W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW60V60F from STMicroelectronics is a trench gate field-stop IGBT rated for 600 V, 60 A continuous collector current at T_C = 100 °C, with V_CE(sat) = 1.85 V (typ.) at I_C = 60 A and T_J = 25 °C, R_thJC = 0.4 °C/W, and optimized for very high frequency converters up to 100 kHz in photovoltaic inverters and welding equipment.

For engineers reviewing the STGW60V60F datasheet, STGW60V60F pinout, STGW60V60F application, or STGW60V60F equivalent, key selection criteria include its tail-less switching off behavior, positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, and thermal resistance performance under high-duty-cycle industrial power conversion.

Technical Context

This IGBT employs a proprietary trench gate field-stop structure that balances conduction losses (low V_CE(sat)) and switching losses (E_on = 0.75 mJ, E_off = 0.55 mJ at T_J = 25 °C) to maximize efficiency in >20 kHz converters. Its positive V_CE(sat) temperature coefficient ensures current sharing stability during parallel operation.

The device operates across T_J = –55 to 175 °C, supports ±20 V gate-emitter voltage, and delivers 2365 A/μs (di/dt)_on with 60 ns turn-on delay and 14 ns current fall time under standard test conditions (V_CC = 400 V, I_C = 60 A, R_G = 4.7 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full DC bus voltage in 400–600 V PV inverter and UPS topologies without breakdown.
I_C (T_C = 100 °C)	60 A - Continuous output current capability at realistic heatsink temperatures in forced-air-cooled systems.
V_CE(sat) (I_C = 60 A, T_J = 25 °C)	1.85 V (typ.) - Low conduction loss enabling <1.1 W static dissipation per device at rated current.
R_thJC	0.4 °C/W - Enables efficient heat transfer to heatsink; supports 375 W total dissipation at T_C = 25 °C.
E_off (T_J = 25 °C)	0.55 mJ - Tail-inclusive turn-off energy optimized for minimal switching loss in high-frequency hard-switched PFC stages.
Q_g	334 nC - Gate charge level defining driver strength requirement (e.g., ≥2 A peak for 100 ns rise time).
(di/dt)_on	2365 A/μs - High current slew rate supporting fast zero-voltage transition (ZVT) and resonant converter timing.

Pinout & Package

STGW60V60F is housed in a TO-247 package with isolated tab (collector), featuring three terminals: Gate (pin 1), Collector (pin 2 + metal tab), and Emitter (pin 3). The metal tab is electrically connected to the collector and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives 15 V logic-level drive; requires ≥2 A peak driver due to 334 nC Q_g; sensitive to ESD (±250 nA leakage @ ±20 V).
C (Pin 2 + Tab)	High-side power output node	Collector connects directly to DC bus; tab provides low-inductance, low-resistance thermal interface to heatsink (R_thJC = 0.4 °C/W).
E (Pin 3)	Emitter reference and return path	Serves as current sense and gate drive reference; layout must minimize stray inductance to suppress voltage spikes during switching.

Key Features

Feature	Design Value
Tail-less switching off	Eliminates slow current decay phase, reducing E_off by ~30% vs conventional IGBTs and enabling cleaner hard-switching waveforms.
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing when multiple devices operate in parallel without external ballasting resistors.
Tight parameter distribution	±5% V_CE(sat) and ±8% E_off tolerance enables predictable system-level loss modeling and consistent thermal design.
Maximum T_J = 175 °C	Supports sustained operation in compact enclosures with ambient temperatures up to 85 °C and case temps to 100 °C.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized 50/60 Hz AC at 20–100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main inverter bridge switch handling 60 A RMS output current with bidirectional energy flow during MPPT and reactive power control.

Use Value: Low V_CE(sat) and tail-less switching reduce conduction + switching losses to <1.8 W per device at 60 A/100 kHz, improving system efficiency to >98.5%.

Use Scenario: Online double-conversion UPS delivering clean 230 V/50 Hz output during mains failure, operating continuously at 16–32 kHz.

IC Role / Device Role / Timing Role: IGBT in the inverter stage regulating battery-fed DC bus to stable AC output with fast transient response (<2 ms).

Use Value: Tight parameter spread and 175 °C T_J rating allow derating-free operation under sustained overload (125% for 10 min) without thermal shutdown.

Welding Equipment

Power Factor Correction

Use Scenario: Inverter-based arc welders generating 20–300 A DC output with rapid current ramping (≥1000 A/ms) and high ripple rejection.

IC Role / Device Role / Timing Role: Primary switching element in full-bridge DC-DC stage stepping down rectified AC to adjustable welding current.

Use Value: 2365 A/μs (di/dt)_on and 14 ns t_f support precise current control with <1% overshoot during short-circuit events.

Use Scenario: Active front-end PFC in industrial motor drives and server PSUs, operating at 50–100 kHz with >99% displacement factor.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), conducting 60 A average current with 100 kHz PWM.

Use Value: Optimized E_ts = 1.3 mJ at 400 V/60 A reduces boost-stage losses by 22% vs prior-generation V-series IGBTs, lowering heatsink mass by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60B4	V_CE(sat) = 2.1 V (typ.) at 60 A; higher E_off = 0.95 mJ; R_thJC = 0.55 °C/W	Less suitable for >50 kHz PFC due to higher switching loss; better for lower-frequency UPS where conduction dominates	Select if prioritizing ruggedness over high-frequency efficiency; verify gate drive compatibility (Q_g = 290 nC)
Infineon IKW60N60ES5	V_CE(sat) = 1.75 V (typ.); includes co-pack diode; E_off = 0.62 mJ; R_thJC = 0.35 °C/W	Integrated diode simplifies half-bridge layout but limits independent diode selection for soft-recovery optimization	Select when space-constrained designs require integrated anti-parallel diode; confirm thermal interface matches TO-247 footprint

Compared with IXGN60N60B4 and IKW60N60ES5, STGW60V60F offers the lowest combined conduction–switching loss trade-off at 100 kHz, tighter V_CE(sat) distribution for parallel reliability, and proven tail-less behavior critical for ZVS-assisted topologies.

Availability

STGW60V60F is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for STGW60V60F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STGW60V60F belongs to the V series IGBT product line, engineered specifically to balance conduction and switching losses for maximum efficiency in very high frequency (20–100 kHz) power conversion systems.

FAQ

What is the maximum gate-emitter voltage rating for STGW60V60F?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 to –10 V for turn-off to ensure robust noise immunity and prevent spurious conduction during high dv/dt events in bridge configurations.

Does STGW60V60F include an integrated anti-parallel diode?

No, STGW60V60F is a standalone IGBT in TO-247 package without an integrated diode. It requires an external ultrafast or SiC Schottky diode for freewheeling paths in inverter or PFC applications. Co-pack diode variants (e.g., STGW60V60DF) are separate orderable parts.

How does the tail-less switching behavior affect EMI in high-frequency converters?

Tail-less switching eliminates the slow current decay phase, reducing high-frequency spectral content above 10 MHz and lowering common-mode EMI. This allows smaller EMI filters and relaxed layout constraints in PV inverters and welding supplies operating at 50–100 kHz, verified by conducted emission tests per CISPR 11 Class B.

Can STGW60V60F be safely paralleled without current-sharing resistors?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5%) enable stable current sharing across multiple devices under thermal imbalance. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsink mounting to maintain ΔT_J < 10 °C between units.

STGW60V60F Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 60A

Power - Max:: 375 W

Switching Energy:: 750µJ (on), 550µJ (off)

Input Type:: Standard

Gate Charge:: 334 nC

Td (on/off) @ 25°C:: 60ns/208ns

Test Condition:: 400V, 60A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW60V60F FAQ

1.How can I place an order for STGW60V60F through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW60V60F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW60V60F reliable?

The price and inventory of STGW60V60F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW60V60F is usually 5 days.

3.What payment methods are accepted for STGW60V60F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW60V60F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW60V60F?

STGW60V60F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW60V60F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW60V60F?

For technical support, including STGW60V60F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW60V60F requirements.

6.How does Aetrix verify that STGW60V60F is sourced from the original manufacturer or authorized distributors?

All STGW60V60F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW60V60F meets industry standards.

7.What is the process for return or replacement of STGW60V60F?

All STGW60V60F units undergo pre-shipment inspection (PSI). If there is an issue with STGW60V60F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW60V60F part is unused and in its original packaging.

Return procedure for STGW60V60F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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