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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW75H65DFB2-4

Name: STGW75H65DFB2-4
Brand: STMicroelectronics
SKU: STGW75H65DFB2-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW75H65DFB2-4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: STGW75H65DFB2-4.pdf

Description:: TRENCH GATE FIELD-STOP, 650 V, 7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW75H65DFB2-4 from STMicroelectronics is a 650 V, 75 A high-speed IGBT with co-packaged soft-recovery diode in TO-247-4 package, featuring Kelvin emitter gate drive (pin 4), 1.55 V typical V_CE(sat) at 75 A/25 °C, 0.42 °C/W junction-to-case thermal resistance, and 88 ns typical reverse recovery time - deployed in solar inverters for DC-AC stage switching.

For engineers reviewing the STGW75H65DFB2-4 datasheet, STGW75H65DFB2-4 pinout, STGW75H65DFB2-4 application, or STGW75H65DFB2-4 equivalent, key selection criteria include Kelvin-emitter gate drive capability, diode softness (Q_rr = 923 nC, dI_rr/dt = 1166 A/µs), TJ = 175 °C rating, and optimized E_on/E_off balance (992 µJ / 766 µJ @ 400 V, 75 A).

Technical Context

This IGBT employs ST's trench-gate field-stop HB2 architecture, engineered to reduce conduction loss at low currents while minimizing switching energy. Its Kelvin emitter (pin 4) separates power and sensing paths to eliminate gate drive loop inductance effects during high-di/dt switching.

The integrated antiparallel diode delivers fast soft recovery (trr = 88 ns typ., Err = 144 µJ) with minimized tail current and tight parameter distribution. Thermal design is supported by low R_thJC (0.42 °C/W for IGBT, 0.49 °C/W for diode) and positive V_CE(sat) temperature coefficient for inherent current sharing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under open-gate condition; enables use in 400–600 V DC bus systems.
I_C (T_C = 100 °C)	71 A - Continuous collector current derated for heatsink interface at 100 °C case temperature.
V_CE(sat) (75 A, 25 °C)	1.55 V typ. - Low saturation voltage reduces conduction loss in high-current PWM stages.
E_on/E_off	992 µJ / 766 µJ - Measured at V_CC = 400 V, I_C = 75 A, R_G(on) = 10 Ω, R_G(off) = 4.7 Ω; defines total switching loss per cycle.
trr / Q_rr	88 ns / 923 nC - Diode reverse recovery metrics measured at I_F = 75 A, V_R = 400 V, di/dt = 1000 A/µs; critical for snubberless operation.
R_thJC (IGBT)	0.42 °C/W - Enables high-power dissipation (357 W at T_C = 25 °C) with minimal junction-to-heatsink thermal drop.
Q_g	207 nC - Total gate charge determines driver strength requirement; Kelvin emitter reduces effective Miller effect.

Pinout & Package

TO-247-4 package with isolated tab (collector), three leads (gate, emitter, Kelvin emitter), and metal tab electrically connected to collector (pin 1). Pin 4 is dedicated Kelvin emitter terminal for accurate gate control under high di/dt.

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab)	Collector (C)	Electrically connected to metal tab; primary high-side power path and thermal interface.
2	Gate (G)	Standard gate input; driven with ±20 V max; requires external gate resistor network.
3	Emitter (E)	Main emitter return path carrying full load current; referenced to power ground.
4	Kelvin Emitter (K)	Sense-only emitter terminal; connects directly to gate driver reference to eliminate source inductance impact on switching.

Key Features

Feature	Design Value
Kelvin emitter configuration	Separates high-current emitter path (pin 3) from gate reference (pin 4), enabling stable turn-on/turn-off under >5 kA/µs di/dt.
Soft-recovery co-packaged diode	trr = 88 ns, Q_rr = 923 nC, dI_rr/dt = 1166 A/µs - Minimizes voltage overshoot and EMI in hard-switched topologies.
Trench gate field-stop HB2 structure	Optimized V_CE(sat) vs. switching loss trade-off: 1.55 V @ 75 A, 992 µJ E_on, 766 µJ E_off at 400 V.
Junction temperature rating	T_J = –55 to +175 °C - Supports operation in high-ambient environments (e.g., enclosed solar inverters) without derating.
Positive V_CE(sat) tempco	V_CE(sat) increases with temperature (1.55 V → 1.9 V at 175 °C), enabling natural current sharing in parallel configurations.

Applications

Welding Inverters

Solar Inverters

Use Scenario: High-frequency DC-link switching in IGBT-based inverter stages of arc welding equipment operating at 15–50 kHz.

IC Role / Device Role / Timing Role: Main switching device in full-bridge output stage; handles pulsed 75 A peak currents with <100 ns switching transitions.

Use Value: Low E_off (766 µJ) and soft diode recovery reduce snubber losses and EMI filtering burden in compact portable welders.

Use Scenario: Three-phase DC-AC conversion stage in string and central solar inverters with 600 V DC input.

IC Role / Device Role / Timing Role: High-efficiency switching element in NPC or T-type inverter legs; operates at 16–20 kHz with 175 °C junction limit.

Use Value: 0.42 °C/W R_thJC and 1.55 V V_CE(sat) enable >98.5% efficiency at 50 kW per module with air-cooled heatsinks.

UPS Systems

Industrial Motor Drives

Use Scenario: Online double-conversion UPS where IGBTs switch battery-fed DC to clean AC output under dynamic load steps.

IC Role / Device Role / Timing Role: Output stage switch handling 71 A continuous current at 100 °C case temperature with fast fault response.

Use Value: Tight parameter distribution and 175 °C TJ rating ensure consistent performance across parallel modules during overload conditions.

Use Scenario: Variable-frequency drives for HVAC compressors and pumps requiring robust 650 V switching at 4–16 kHz PWM.

IC Role / Device Role / Timing Role: Inverter leg switch with integrated diode for regenerative braking current path.

Use Value: Very fast diode (trr = 88 ns) and minimized tail current prevent shoot-through risk during commutation in 3-level topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N60B4	600 V, 75 A; TO-247-3; no Kelvin emitter; higher V_CE(sat) (1.7 V typ.) and slower diode (trr = 120 ns).	Lacks Kelvin emitter - unsuitable for >10 kA/µs di/dt; requires larger gate drivers and snubbers in high-frequency designs.	Select when cost sensitivity outweighs switching loss and layout complexity; verify gate drive loop inductance.
Infineon IKW75N65ES5	650 V, 75 A; TO-247-3; field-stop TRENCHSTOP™ 5; V_CE(sat) = 1.6 V; E_off = 1100 µJ (higher than ST's 766 µJ).	No Kelvin emitter; higher E_off increases thermal load in 20 kHz+ PFC or inverter stages.	Prefer for lower-cost industrial drives where 175 °C rating and soft diode are secondary to BOM cost.

Compared with IXGN75N60B4 and IKW75N65ES5, STGW75H65DFB2-4 uniquely combines Kelvin emitter control, lowest E_off, and softest diode recovery - making it optimal for high-efficiency, high-frequency solar and UPS inverters where layout parasitics and thermal management are critical.

Availability

STGW75H65DFB2-4 is available at Aetrix Electronics and suitable for solar inverters, UPS systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STGW75H65DFB2-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's HB2-series high-speed IGBT portfolio, developed specifically for high-efficiency, high-frequency power conversion in renewable energy and uninterruptible power systems.

FAQ

What is the purpose of the Kelvin emitter (pin 4) on STGW75H65DFB2-4?

Pin 4 is a dedicated Kelvin emitter terminal that provides a low-inductance gate reference path separate from the main emitter current path (pin 3). This eliminates voltage spikes caused by source inductance during high-di/dt switching, ensuring precise gate control and stable turn-on/turn-off behavior in fast-switching applications like solar inverters.

Can STGW75H65DFB2-4 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (1.55 V at 25 °C → 1.9 V at 175 °C) enables natural current sharing between paralleled devices. Combined with tight parameter distribution and matched diode characteristics, it supports reliable multi-device operation in high-power UPS and welding inverters without active current balancing.

How does the co-packaged diode differ from standard FRDs in terms of system-level benefits?

The integrated diode features soft recovery (trr = 88 ns, Q_rr = 923 nC, dI_rr/dt = 1166 A/µs), minimizing voltage overshoot and reducing snubber losses. Unlike standard fast recovery diodes, it is process-matched to the IGBT, ensuring consistent thermal coupling and eliminating mismatch-induced oscillations in high-frequency PFC and inverter stages.

What thermal derating applies above 100 °C case temperature?

At T_C = 100 °C, continuous collector current is rated at 71 A (down from 115 A at 25 °C); total power dissipation drops to ~150 W. Derating follows the curve in Figure 2 of DS13421 - linear interpolation shows ~0.65 A/°C reduction beyond 100 °C, reaching zero current at ~175 °C case temperature.

STGW75H65DFB2-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB2

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 115 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 75A

Power - Max:: 357 W

Switching Energy:: 992µJ (on), 766µJ (off)

Input Type:: Standard

Gate Charge:: 207 nC

Td (on/off) @ 25°C:: 22ns/121ns

Test Condition:: 400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr):: 88 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STGW75H65DFB2-4 FAQ

1.How can I place an order for STGW75H65DFB2-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW75H65DFB2-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW75H65DFB2-4 reliable?

The price and inventory of STGW75H65DFB2-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW75H65DFB2-4 is usually 5 days.

3.What payment methods are accepted for STGW75H65DFB2-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW75H65DFB2-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW75H65DFB2-4?

STGW75H65DFB2-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW75H65DFB2-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW75H65DFB2-4?

For technical support, including STGW75H65DFB2-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW75H65DFB2-4 requirements.

6.How does Aetrix verify that STGW75H65DFB2-4 is sourced from the original manufacturer or authorized distributors?

All STGW75H65DFB2-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW75H65DFB2-4 meets industry standards.

7.What is the process for return or replacement of STGW75H65DFB2-4?

All STGW75H65DFB2-4 units undergo pre-shipment inspection (PSI). If there is an issue with STGW75H65DFB2-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW75H65DFB2-4 part is unused and in its original packaging.

Return procedure for STGW75H65DFB2-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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