STMicroelectronics STGW75M65DF2

Overview

STGW75M65DF2 from STMicroelectronics is a 650 V, 75 A trench-gate field-stop IGBT with integrated soft-recovery antiparallel diode in TO-247 package. It delivers V_CE(sat) = 1.65 V (typ.) at I_C = 75 A and T_J = 25 °C, 6 µs short-circuit withstand time at V_GE = 15 V, and R_thJC = 0.32 °C/W for the IGBT die - enabling high-efficiency motor control inverters operating up to 175 °C junction temperature.

For engineers reviewing the STGW75M65DF2 datasheet, STGW75M65DF2 pinout, STGW75M65DF2 application, or STGW75M65DF2 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, low thermal resistance, and integrated diode with t_rr = 165 ns (typ.) at T_J = 25 °C and I_F = 75 A.

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture optimized for inverter systems requiring simultaneous low conduction loss and robust short-circuit capability. Its design integrates a monolithic antiparallel diode with soft reverse recovery (Q_rr = 1.72 µC typ., dI_rr/dt = 750 A/µs) and exhibits a positive V_CE(sat) temperature coefficient across –40 °C to 175 °C, ensuring current sharing stability in parallel configurations.

The device operates with ±20 V gate-emitter voltage rating and supports 15 V nominal gate drive. Dynamic performance is characterized by E_on = 0.69 mJ and E_off = 2.54 mJ (V_CC = 400 V, I_C = 75 A, R_G = 3.3 Ω, T_J = 25 °C), and switching times including t_d(on) = 47 ns and t_f = 93 ns under identical conditions.

Key Specifications

Pinout & Package

STGW75M65DF2 is housed in a TO-247 package with standard 3-pin configuration and isolated metal tab (collector). The case is electrically connected to pin 2 (C), enabling direct thermal coupling to heatsinks while maintaining electrical isolation of emitter and gate terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN75N60B3, STGW75M65DF2 provides higher voltage margin and integrated diode simplicity; versus IKW75N65ES5, it offers superior short-circuit robustness and thermal performance critical for industrial UPS and servo applications.

Availability

STGW75M65DF2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and active front-end rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STGW75M65DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGW75M65DF2 belongs to ST's M-series IGBT portfolio, engineered specifically for high-efficiency, high-reliability inverter systems where low conduction loss, short-circuit ruggedness, and safe paralleling are mandatory design requirements.

FAQ

What is the maximum gate-emitter voltage rating for STGW75M65DF2?

The absolute maximum gate-emitter voltage is ±20 V, as specified in Table 1 of DS11403 Rev 4. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent spurious turn-on during high dv/dt events.

Does STGW75M65DF2 include an integrated diode, and what are its key recovery characteristics?

Yes, STGW75M65DF2 integrates a soft-recovery antiparallel diode monolithically. At T_J = 25 °C and I_F = 75 A, typical values are t_rr = 165 ns, Q_rr = 1.72 µC, and dI_rr/dt = 750 A/µs. These parameters are confirmed in Table 6 and Figure 31 of the datasheet, enabling low-loss freewheeling with minimal voltage overshoot.

How does the positive V_CE(sat) temperature coefficient improve system reliability?

The positive coefficient (V_CE(sat) increases with junction temperature, per Figure 5) ensures that paralleled IGBTs self-balance current during thermal transients. As one device heats up, its V_CE(sat) rises, reducing its share of total current - eliminating thermal runaway without external current-sensing or active balancing circuits.

What is the thermal resistance from junction to case for the IGBT die, and how is it measured?

R_thJC for the IGBT portion is 0.32 °C/W, measured under steady-state conditions with the metal tab (pin 2) mounted to a cold plate per JESD51-14. This value is independent of the diode's R_thJC (0.74 °C/W) and reflects the thermal path from IGBT die to TO-247 case surface, critical for heatsink sizing calculations.