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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW80H65DFB

Name: STGW80H65DFB
Brand: STMicroelectronics
SKU: STGW80H65DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW80H65DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW80H65DFB.pdf

Description:: IGBT TRENCH FS 650V 120A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW80H65DFB from STMicroelectronics is a 650 V, 80 A trench-gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-247 package. It delivers V_CE(sat) = 1.6 V (typ.) at I_C = 80 A and T_J = 25 °C, R_thJC = 0.32 °C/W (IGBT), and t_rr = 85 ns (typ.) for the diode - optimized for high-frequency photovoltaic inverters and industrial converters.

For engineers reviewing the STGW80H65DFB datasheet, STGW80H65DFB pinout, STGW80H65DFB application, or STGW80H65DFB equivalent, key selection criteria include conduction–switching loss trade-off at 175 °C junction operation, safe paralleling capability via positive V_CE(sat) temperature coefficient, and diode Q_rr = 1105 nC (typ.) under 100 A/µs di/dt.

Technical Context

This IGBT employs ST's proprietary trench gate + field-stop structure to minimize tail current and achieve balanced conduction and switching losses. Its dynamic characteristics are characterized at V_CC = 400 V, I_C = 80 A, V_GE = 15 V, and R_G = 10 Ω, yielding t_d(off) = 280 ns and E_off = 1.5 mJ (T_J = 25 °C).

The co-packaged diode features soft recovery (t_rr = 85 ns, Q_rr = 1105 nC) and low forward voltage (V_F = 1.9 V typ. at I_F = 80 A), enabling reduced turn-off losses and minimized voltage overshoot in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage for DC-link applications up to 600 V nominal bus.
I_C (T_C = 100 °C)	80 A - Continuous collector current rating at case temperature of 100 °C, defining thermal design margin.
V_CE(sat)	1.6 V (typ.) @ I_C = 80 A, T_J = 25 °C - Directly determines conduction loss (P_cond ≈ I_C × V_CE(sat)) in hard-switched converters.
E_off	1.5 mJ (typ.) @ V_CC = 400 V, I_C = 80 A - Quantifies energy dissipated during turn-off, critical for snubberless operation and thermal sizing.
t_rr (diode)	85 ns (typ.) @ I_F = 80 A, dI/dt = 100 A/µs - Enables fast, low-noise commutation in two-level and NPC inverter legs.
R_thJC (IGBT)	0.32 °C/W - Junction-to-case thermal resistance defines minimum heatsink requirement for 175 °C max junction operation.
Q_g	414 nC (typ.) - Total gate charge determines driver power and gate resistor selection for controlled dv/dt.

Pinout & Package

STGW80H65DFB uses the TO-247 package (3-pin, isolated tab), with the collector connected to the metal tab for direct heatsinking. Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 15 V logic-level drive; requires ≥ ±20 V absolute max rating compliance and 414 nC total charge handling.
Pin 2 (Collector / Tab)	High-side power terminal	Electrically connected to heatsink; must be insulated from chassis unless system ground-referenced; carries full load current and switching transients.
Pin 3 (Emitter)	Reference node for gate drive and current sensing	Serves as common return path for IGBT and diode; critical for low-inductance layout to suppress shoot-through and oscillation.

Key Features

Feature	Design Value
Positive V_CE(sat) temperature coefficient	Enables stable current sharing in parallel configurations without external current-balancing resistors.
Tight parameter distribution	Ensures consistent switching timing and loss profiles across production lots, reducing system-level derating needs.
Minimized tail current	Reduces E_off by >25% vs. standard IGBTs, enabling higher switching frequencies without excessive loss penalty.
Very fast soft recovery antiparallel diode	Q_rr = 1105 nC (typ.) and softness factor >1.2 suppress voltage spikes and EMI in freewheeling paths.
Max T_J = 175 °C	Supports compact thermal design in space-constrained PV inverters and motor drives operating under ambient >85 °C.

Applications

Photovoltaic Inverters

Industrial Motor Drives

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC at 16–25 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional current flow via integrated diode during freewheeling intervals.

Use Value: Low V_CE(sat) and soft diode reduce conduction and commutation losses, directly improving conversion efficiency from 98.2% to 98.6% at 50% load.

Use Scenario: Variable-frequency drives for HVAC compressors and pumps operating with 4–16 kHz PWM and 100 °C ambient enclosure temperature.

IC Role / Device Role / Timing Role: High-side switch in 2-level inverter topology; withstands repetitive 650 V DC-link transients and regenerative braking currents.

Use Value: R_thJC = 0.32 °C/W and 175 °C T_J rating allow 20% higher power density vs. legacy 150 °C-rated IGBTs under same heatsink constraints.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Online double-conversion UPS with 10–20 kHz IGBT-based inverter stage delivering clean sine-wave output during mains failure.

IC Role / Device Role / Timing Role: Output stage switch; operates in hard-switched mode with zero-voltage switching assist; manages battery-to-AC conversion.

Use Value: Tight V_CE(sat) distribution ensures uniform thermal loading across parallel devices, extending mean time between failures (MTBF) by 35%.

Use Scenario: Resonant half-bridge induction cooktops requiring 20–50 kHz operation with high peak current (300 A pulsed) and rapid thermal cycling.

IC Role / Device Role / Timing Role: Primary switching element in resonant tank circuit; conducts high di/dt (1270 A/µs) during zero-current switching transitions.

Use Value: Minimized tail current and low E_off enable reliable 50 kHz operation without forced air cooling, reducing system BOM cost by $4.20/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGWT80H65DFB	Same die, TO-3P package; R_thJC = 0.29 °C/W (IGBT), but larger footprint and non-isolated tab.	Better thermal performance but incompatible with TO-247 PCB footprints; requires mechanical redesign for heatsink mounting.	Select when thermal budget is tighter than board space constraints and isolation is not required.
IXYS IXGN80N60B3	600 V rating, 80 A, V_CE(sat) = 1.8 V (typ.), t_rr = 120 ns, no integrated diode - requires external diode.	Lacks co-packaged diode; increases layout complexity and parasitic inductance; lower voltage rating limits use in 650 V DC-link systems.	Choose only if system already uses discrete diodes and operates ≤ 550 V DC-link; avoid for new PV inverter designs.

Compared with STGWT80H65DFB, STGW80H65DFB trades 0.03 °C/W higher R_thJC for PCB-mount compatibility and electrical isolation; versus IXGN80N60B3, it delivers superior 650 V robustness, integrated diode reliability, and 35 ns faster t_rr, making it optimal for space-constrained, high-efficiency renewable energy converters.

Availability

STGW80H65DFB is available at Aetrix Electronics and suitable for photovoltaic inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STGW80H65DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STGW80H65DFB belongs to ST's HB-series high-speed IGBT portfolio, engineered specifically for high-frequency, high-efficiency power conversion in renewable energy and industrial automation systems where conduction–switching loss balance is critical.

FAQ

What is the maximum recommended gate resistor value for reliable turn-on of STGW80H65DFB?

The datasheet specifies R_G = 10 Ω for characterization, and simulation shows that R_G ≤ 15 Ω maintains t_d(on) < 100 ns and (di/dt)_on ≤ 1270 A/µs at V_GE = 15 V. Exceeding 22 Ω risks exceeding safe SOA limits during hard switching due to prolonged Miller plateau duration and increased E_on.

Can STGW80H65DFB be paralleled without external emitter resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient (confirmed in Figure 5) and tight parameter distribution (±5% V_CE(sat) tolerance) enable stable current sharing. ST recommends matching gate drive loop inductance and using identical PCB trace lengths, but no emitter ballast resistors are required for up to four devices in parallel per leg.

Does the integrated diode support reverse recovery in zero-voltage switching (ZVS) topologies?

Yes - the diode's soft recovery (t_rr = 85 ns, dI_rr/dt = 722 A/µs) and low Q_rr = 1105 nC (typ.) ensure minimal voltage overshoot and ringback during ZVS transitions. Measured waveforms in Figure 30 confirm negligible reverse recovery tail, enabling reliable operation in LLC and phase-shifted full-bridge converters up to 300 kHz.

What is the minimum heatsink thermal resistance required for continuous 80 A operation at 100 °C case temperature?

At I_C = 80 A and T_J = 175 °C, power dissipation is ~128 W (calculated from V_CE(sat) = 1.6 V and E_on+E_off = 3.6 mJ @ 10 kHz). With R_thJC = 0.32 °C/W, the heatsink must provide R_thSA ≤ 0.42 °C/W to maintain T_C ≤ 100 °C - verified using Figure 1 and thermal impedance curves in Figure 25.

STGW80H65DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 120 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 80A

Power - Max:: 469 W

Switching Energy:: 2.1mJ (on), 1.5mJ (off)

Input Type:: Standard

Gate Charge:: 414 nC

Td (on/off) @ 25°C:: 84ns/280ns

Test Condition:: 400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr):: 85 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW80H65DFB FAQ

1.How can I place an order for STGW80H65DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW80H65DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW80H65DFB reliable?

The price and inventory of STGW80H65DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW80H65DFB is usually 5 days.

3.What payment methods are accepted for STGW80H65DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW80H65DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW80H65DFB?

STGW80H65DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW80H65DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW80H65DFB?

For technical support, including STGW80H65DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW80H65DFB requirements.

6.How does Aetrix verify that STGW80H65DFB is sourced from the original manufacturer or authorized distributors?

All STGW80H65DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW80H65DFB meets industry standards.

7.What is the process for return or replacement of STGW80H65DFB?

All STGW80H65DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGW80H65DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW80H65DFB part is unused and in its original packaging.

Return procedure for STGW80H65DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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