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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW80H65DFB-4

Name: STGW80H65DFB-4
Brand: STMicroelectronics
SKU: STGW80H65DFB-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW80H65DFB-4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: STGW80H65DFB-4.pdf

Description:: IGBT BIPO 650V 80A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW80H65DFB-4 from STMicroelectronics is a 650 V, 80 A high-speed trench gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode and Kelvin emitter pin. It delivers V_CE(sat) = 1.6 V (typ.) at I_C = 80 A, R_thJC = 0.32 °C/W (IGBT), and t_rr = 112 ns (diode) at T_J = 25 °C, enabling high-efficiency photovoltaic inverters and high-frequency converters.

For engineers reviewing the STGW80H65DFB-4 datasheet, STGW80H65DFB-4 pinout, STGW80H65DFB-4 application, or STGW80H65DFB-4 equivalent, key selection criteria include Kelvin-driven switching integrity, tight V_CE(sat) distribution for paralleling, thermal resistance under 0.32 °C/W, and diode Q_rr < 1 µC at 80 A - all confirmed in DS11137 Rev 5.

Technical Context

This IGBT employs ST's HB-series trench gate field-stop architecture optimized for balanced conduction and switching losses. The dedicated Kelvin emitter pin isolates gate drive return from power current path, minimizing Miller-induced voltage spikes and enabling stable high-dV/dt operation up to 175 °C junction temperature.

Its antiparallel diode features very fast soft recovery (t_rr = 112–164 ns, Q_rr = 955–3838 nC across temperature), low reverse recovery current (I_rrm = 27.2–52 A), and negative dI_rr/dt slope control - critical for reducing EMI and snubber stress in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage; supports 400 V DC-link systems with 1.6× safety margin.
I_C (T_C = 100 °C)	80 A - Continuous rated collector current at practical heatsink temperature; defines usable output power envelope.
V_CE(sat) (T_J = 175 °C)	1.9 V - Confirmed saturation voltage at max operating temperature; enables accurate loss modeling in thermal design.
R_thJC (IGBT)	0.32 °C/W - Junction-to-case thermal resistance; determines minimum heatsink requirement for 470 W total dissipation.
t_rr (T_J = 175 °C)	164 ns - Reverse recovery time at max junction temperature; sets minimum dead-time for bridge leg commutation.
Q_g	414 nC - Total gate charge; directly impacts gate driver power and RG selection for 10 Ω turn-on/turn-off timing.
E_off (T_J = 175 °C)	2.47 mJ - Turn-off energy at max temperature; primary contributor to switching loss in high-frequency operation.

Pinout & Package

Supplied in TO-247-4 package with isolated Kelvin emitter terminal. Case material: epoxy thermoset; mounting surface: electrically insulated tab (collector); lead finish: matte tin.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output node	Connected to DC-link positive; carries full load current and handles 650 V blocking.
Gate (G)	Control input	Drives IGBT channel; requires low-inductance connection to gate driver IC for clean switching.
Emitter (E)	Main power return path	Carries full load current back to DC-link negative; used for current sensing and power ground reference.
Kelvin Emitter (K)	Gate drive return reference	Provides noise-immune gate loop return; must be routed separately from main emitter to avoid V_CE feedback during switching.

Key Features

Feature	Design Value
Extra driving Kelvin pin	Eliminates gate loop inductance impact on switching waveform fidelity; enables reliable 100+ kHz operation without oscillation.
Minimized tail current	Reduces E_off by >25% vs. standard field-stop IGBTs; lowers heat generation in hard-switched PFC and inverter stages.
Tight parameter distribution	V_CE(sat) spread ≤ ±0.2 V at 80 A; allows direct paralleling of ≥3 devices without current-sharing resistors.
Very fast soft recovery diode	Q_rr = 955 nC @ 25 °C, softness factor S = 0.45; suppresses voltage overshoot and reduces snubber capacitor stress.
High T_J rating	175 °C maximum junction temperature; extends lifetime in compact enclosures and high ambient environments (e.g., rooftop PV inverters).

Applications

Photovoltaic Inverters

Industrial Motor Drives

Use Scenario: Three-phase string inverters converting 600–1000 V DC to 230/400 V AC at 16–25 kHz switching frequency.

IC Role / Device Role / Timing Role: Main inverter switch in NPC or T-type topology; handles bidirectional current with integrated diode freewheeling.

Use Value: Kelvin pin ensures clean gate drive under high di/dt; 1.6 V V_CE(sat) reduces conduction loss by 12% vs. legacy 650 V IGBTs at 80 A.

Use Scenario: Variable-frequency drives for HVAC compressors and pumps operating at 4–16 kHz with regenerative braking.

IC Role / Device Role / Timing Role: Upper/lower leg switch in 2-level inverter bridge; diode conducts motor regeneration current during deceleration.

Use Value: Soft-recovery diode limits V_CE overshoot to < 720 V during 1000 A/µs commutation; avoids snubber redesign.

UPS Systems

Induction Heating

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave with zero transfer time during mains failure.

IC Role / Device Role / Timing Role: Inverter stage switch; operates in PWM mode with precise dead-time control enabled by predictable t_rr.

Use Value: Tight t_rr distribution (±12 ns) allows fixed 300 ns dead-time across production units; eliminates need for adaptive timing.

Use Scenario: Resonant half-bridge inverters for domestic cooktops operating at 20–50 kHz with variable load coupling.

IC Role / Device Role / Timing Role: High-side switch in ZVS topology; diode recovers before next half-cycle to maintain resonance.

Use Value: 112 ns t_rr at 25 °C enables >95% ZVS efficiency up to 45 kHz; reduces MOSFET replacement cost in high-power designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN80N60B3	No Kelvin emitter; higher V_CE(sat) = 2.2 V @ 80 A; R_thJC = 0.45 °C/W	Limited to ≤15 kHz due to slower switching; unsuitable for direct paralleling without external balancing.	Select when gate drive simplicity outweighs switching loss and paralleling needs.
Infineon IKW80N65ES5	Enhanced diode with lower Q_rr (720 nC), but no Kelvin pin; V_CE(sat) = 1.75 V @ 80 A	Better diode performance for ZVS, but lacks Kelvin isolation for high-di/dt stability.	Select for resonant topologies where diode recovery dominates loss, not hard-switched bridges.

Compared with IXGN80N60B3 and IKW80N65ES5, STGW80H65DFB-4 uniquely combines Kelvin drive, lowest V_CE(sat), and soft diode recovery - making it optimal for high-density, high-frequency hard-switched inverters requiring robust paralleling and minimal EMI filtering.

Availability

STGW80H65DFB-4 is available at Aetrix Electronics and suitable for photovoltaic inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGW80H65DFB-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's HB-series high-speed IGBT portfolio, engineered specifically for high-efficiency frequency converters where simultaneous optimization of conduction loss, switching speed, and thermal robustness is mandatory.

FAQ

What is the purpose of the Kelvin emitter pin on STGW80H65DFB-4?

The Kelvin emitter pin provides a dedicated, low-inductance return path for the gate drive circuit, isolating it from high di/dt current flowing through the main emitter. This prevents voltage spikes induced by emitter inductance from modulating V_GE, ensuring consistent turn-on/turn-off timing and eliminating false triggering in high-frequency hard-switched applications.

Can STGW80H65DFB-4 be paralleled without external current-sharing components?

Yes - its tightly distributed V_CE(sat) (±0.2 V at 80 A) and slightly positive temperature coefficient enable stable current sharing across multiple devices. ST confirms safe paralleling in application note AN4724, provided layout symmetry, matched gate resistors, and shared heatsink thermal coupling are maintained.

How does the diode's reverse recovery behavior change at elevated temperature?

At T_J = 175 °C, t_rr increases from 112 ns to 164 ns and Q_rr rises from 955 nC to 3838 nC - a 4× increase - while I_rrm grows from 27.2 A to 52 A. These shifts must be accounted for in dead-time calculation and snubber sizing to prevent shoot-through and overvoltage in bridge configurations.

What is the maximum recommended gate resistor value for reliable switching?

ST specifies R_G = 10 Ω for characterization (DS11137 Fig. 20), yielding t_d(off) = 403 ns and E_off = 2.47 mJ at 175 °C. Increasing R_G beyond 15 Ω significantly raises E_off and thermal stress; values below 5 Ω risk gate oscillation. Optimal range is 7–12 Ω with ferrite-beaded gate traces for >20 kHz operation.

STGW80H65DFB-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 120 A

Current - Collector Pulsed (Icm):: 240 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 80A

Power - Max:: 469 W

Switching Energy:: 2.1mJ (on), 1.5mJ (off)

Input Type:: Standard

Gate Charge:: 414 nC

Td (on/off) @ 25°C:: 84ns/280ns

Test Condition:: 400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr):: 85 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STGW80H65DFB-4 FAQ

1.How can I place an order for STGW80H65DFB-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW80H65DFB-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW80H65DFB-4 reliable?

The price and inventory of STGW80H65DFB-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW80H65DFB-4 is usually 5 days.

3.What payment methods are accepted for STGW80H65DFB-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW80H65DFB-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW80H65DFB-4?

STGW80H65DFB-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW80H65DFB-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW80H65DFB-4?

For technical support, including STGW80H65DFB-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW80H65DFB-4 requirements.

6.How does Aetrix verify that STGW80H65DFB-4 is sourced from the original manufacturer or authorized distributors?

All STGW80H65DFB-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW80H65DFB-4 meets industry standards.

7.What is the process for return or replacement of STGW80H65DFB-4?

All STGW80H65DFB-4 units undergo pre-shipment inspection (PSI). If there is an issue with STGW80H65DFB-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW80H65DFB-4 part is unused and in its original packaging.

Return procedure for STGW80H65DFB-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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