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STMicroelectronics STGW80H65FB
- Part No.:
- STGW80H65FB
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
STGW80H65FB.pdf
- Description:
- IGBT 650V 120A 469W TO-247
- Quantity:
- Payment:
- Shipping:
Inventory:3,286
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Product details
Overview
STGW80H65FB from STMicroelectronics is a trench gate field-stop IGBT in the HB series, rated for 650 V collector-emitter voltage and 80 A continuous collector current at TC = 100 °C. It delivers 1.6 V typical VCE(sat), 0.32 °C/W thermal resistance (junction-to-case), and optimized high-speed switching with minimized tail current - deployed in photovoltaic inverters and high-frequency converters where efficiency and safe paralleling are critical.
For engineers reviewing the STGW80H65FB datasheet, STGW80H65FB pinout, STGW80H65FB application, or STGW80H65FB equivalent, key selection criteria include VCE(sat) temperature coefficient, switching loss profile at 175 °C, RthJC for heatsink design, and gate charge (Qg = 414 nC) for driver sizing.
Technical Context
This IGBT employs ST's proprietary trench gate + field-stop structure to balance conduction and switching losses across 10–50 kHz operating ranges. Its slightly positive VCE(sat) temperature coefficient (1.6 V @ 25 °C → 1.9 V @ 175 °C) and tight parameter distribution enable stable parallel operation without external current-sharing resistors.
Dynamic performance is characterized by low Eon (2.1 mJ) and Eoff (1.5 mJ) at 400 V/80 A/10 Ω gate resistance, with turn-off delay (td(off)) of 280 ns and fast current fall time (tf = 31 ns) - enabling high-efficiency hard-switched topologies in solar inverters and UPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 650 V - Maximum blocking voltage under open-gate condition; defines DC bus rating compatibility in 600 V-class inverters. |
| IC (TC = 100 °C) | 80 A - Continuous current capability at realistic heatsink temperature; determines usable output power in forced-air-cooled designs. |
| VCE(sat) (TJ = 25 °C) | 1.6 V (typ.) - Low conduction loss at rated current; reduces steady-state power dissipation and improves system efficiency. |
| RthJC | 0.32 °C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing for 469 W max power dissipation at TC = 25 °C. |
| Qg | 414 nC - Total gate charge; dictates gate driver peak current requirement (~40 A for 10 ns rise time) and drive power loss. |
| Eoff | 1.5 mJ (TJ = 25 °C) - Turn-off energy loss; critical for calculating total switching loss and thermal stress at 10–20 kHz switching frequencies. |
| td(off) | 280 ns - Turn-off delay time; impacts minimum dead-time setting and cross-conduction risk in half-bridge configurations. |
Pinout & Package
STGW80H65FB is housed in a TO-247 package with 3 terminals: Collector (pin 2 / tab), Emitter (pin 3), and Gate (pin 1). The metal tab is electrically connected to the collector, requiring insulated mounting in most applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ±20 V absolute max rating; 414 nC total charge demands robust gate driver with low impedance path. |
| Pin 2 / Tab (C) | Collector | Main high-side power terminal; electrically tied to metal tab - mandates isolation washer or insulating pad when mounted to heatsink. |
| Pin 3 (E) | Emitter | Power return and reference node for gate drive; low-inductance layout essential to suppress voltage spikes during switching. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching with minimized tail current | Reduces turn-off energy (Eoff = 1.5 mJ) and di/dt-induced voltage overshoot in hard-switched converters. |
| Slightly positive VCE(sat) temperature coefficient | Enables inherent current balancing in parallel configurations without external emitter resistors or active control. |
| Tight parameter distribution | Ensures consistent dynamic behavior across production lots - critical for multi-module inverter scalability and BOM simplification. |
| 175 °C maximum junction temperature | Supports high-power density designs with reduced heatsink volume and extended lifetime under thermal cycling stress. |
| Low RthJC (0.32 °C/W) | Allows direct mounting to compact heatsinks while maintaining TJ ≤ 175 °C at 80 A continuous operation. |
Applications
| Photovoltaic Inverters | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: DC-to-AC conversion stage in string or central solar inverters operating at 16–20 kHz switching frequency. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter bridge; handles bidirectional reactive power flow and grid-synchronization timing. Use Value: Low Ets (3.6 mJ) and stable VCE(sat) over temperature reduce thermal derating and improve MPPT efficiency above 98.5%. |
Use Scenario: Online double-conversion UPS output stage delivering clean sine-wave AC during mains failure. IC Role / Device Role / Timing Role: IGBT switch in H-bridge inverter; synchronized to DSP-controlled PWM with <1 µs timing resolution. Use Value: Fast tf (31 ns) and low Qgc (170 nC) minimize distortion and THD in 50/60 Hz fundamental output with high-frequency carrier. |
| Industrial Motor Drives | Induction Heating Systems |
Use Scenario: Variable-frequency drive (VFD) for 30–75 kW AC induction motors in pump/compressor applications. IC Role / Device Role / Timing Role: Main power switch in 2-level inverter topology; subjected to repetitive short-circuit events during stall conditions. Use Value: Robust short-circuit withstand time (≥10 µs per datasheet SOA) and 240 A pulsed rating support I2t protection schemes without desaturation circuitry. |
Use Scenario: Resonant half-bridge in medium-frequency (20–50 kHz) induction heating generators for metal forging and brazing. IC Role / Device Role / Timing Role: High-current switching element in ZVS-capable topology; operates with zero-voltage turn-on and controlled di/dt. Use Value: Minimized tail current and low Cres (215 pF) reduce switching losses and EMI generation during resonant transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN80N60B3 | 600 V rating, higher VCE(sat) (1.8 V typ.), slower td(off) (350 ns), RthJC = 0.35 °C/W | Lower voltage margin limits use in 650 V DC bus systems; higher conduction loss increases thermal load at full load. | Select only if system DC bus ≤ 600 V and gate drive strength is limited - lower Qg (340 nC) eases driver design. |
| Infineon IKW80N65ES5 | 650 V rating, lower VCE(sat) (1.55 V typ.), faster tf (25 ns), but tighter VGE(th) tolerance (5–6.5 V vs. ST's 5–7 V) | Better conduction efficiency but more sensitive to gate noise; requires stricter gate drive filtering in noisy industrial environments. | Prefer for ultra-high-efficiency designs where gate drive stability is assured; avoid in high-EMI motor drive cabinets without added RC snubbing. |
Compared with IXGN80N60B3 and IKW80N65ES5, STGW80H65FB offers superior thermal resistance and balanced switching/conduction trade-off - making it optimal for photovoltaic inverters requiring long-term reliability at elevated junction temperatures.
Availability
STGW80H65FB is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp-up.
Supply support for STGW80H65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STGW80H65FB belongs to the HB-series IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial automation systems - emphasizing thermal robustness and parallel-safe operation.
FAQ
What is the maximum allowable gate-emitter voltage for STGW80H65FB?
The absolute maximum gate-emitter voltage is ±20 V, as specified in Table 2 of the datasheet. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +15 V (turn-on) and –5 V to –10 V (turn-off) to ensure fast, noise-immune switching while staying within safe margins.
Can STGW80H65FB be safely paralleled with identical units?
Yes - its slightly positive VCE(sat) temperature coefficient and tight parameter distribution (±5% on key parameters per datasheet) enable stable current sharing without external emitter resistors. Parallel operation requires matched gate drive loop inductance and symmetrical PCB layout to prevent dynamic imbalance.
What is the short-circuit withstand time for STGW80H65FB?
Per ST's application note AN4724, STGW80H65FB supports ≥10 µs short-circuit withstand time at VCC = 400 V, TJ = 150 °C, and VGE = 15 V. This enables implementation of simple desaturation detection circuits for fault protection in motor drives and UPS systems.
Does STGW80H65FB include an integrated anti-parallel diode?
No - STGW80H65FB is a standalone IGBT in TO-247 package with no co-packaged diode. External fast-recovery or SiC Schottky diodes (e.g., STTH160R06D) must be used in inductive-load applications to handle reverse recovery current and freewheeling paths.
STGW80H65FB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 120 A
- Current - Collector Pulsed (Icm):
- 240 A
- Vce(on) (Max) @ Vge, Ic:
- 2V @ 15V, 80A
- Power - Max:
- 469 W
- Switching Energy:
- 2.1mJ (on), 1.5mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 414 nC
- Td (on/off) @ 25°C:
- 84ns/280ns
- Test Condition:
- 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STGW80H65FB FAQ
1.How can I place an order for STGW80H65FB through Aetrix?
Please submit a Request for Quotation (RFQ) for STGW80H65FB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGW80H65FB reliable?
The price and inventory of STGW80H65FB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW80H65FB is usually 5 days.
3.What payment methods are accepted for STGW80H65FB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW80H65FB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGW80H65FB?
STGW80H65FB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGW80H65FB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGW80H65FB?
For technical support, including STGW80H65FB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW80H65FB requirements.
6.How does Aetrix verify that STGW80H65FB is sourced from the original manufacturer or authorized distributors?
All STGW80H65FB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW80H65FB meets industry standards.
7.What is the process for return or replacement of STGW80H65FB?
All STGW80H65FB units undergo pre-shipment inspection (PSI). If there is an issue with STGW80H65FB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGW80H65FB part is unused and in its original packaging.
Return procedure for STGW80H65FB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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