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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA100H65DFB2

Name: STGWA100H65DFB2
Brand: STMicroelectronics
SKU: STGWA100H65DFB2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA100H65DFB2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA100H65DFB2.pdf

Description:: TRENCH GATE FIELD-STOP, 650 V, 1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA100H65DFB2 from STMicroelectronics is a 650 V, 100 A trench-gate field-stop IGBT with co-packaged fast soft-recovery diode in TO-247 long leads package. It delivers low V_CE(sat) = 1.55 V (typ. @ I_C = 100 A, T_J = 25 °C), tight parameter distribution, and 175 °C max junction temperature - optimized for high-efficiency welding inverters and solar PV string inverters.

For engineers reviewing the STGWA100H65DFB2 datasheet, STGWA100H65DFB2 pinout, STGWA100H65DFB2 application, or STGWA100H65DFB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, diode reverse recovery charge (Q_rr = 1256 nC @ T_J = 25 °C), switching energy (E_on = 2200 µJ, E_off = 1400 µJ), thermal resistance (R_thJC = 0.34 °C/W), and antiparallel diode softness for reduced EMI in hard-switched PFC stages.

Technical Context

This IGBT uses ST's HB2-generation trench gate field-stop structure to simultaneously reduce conduction loss at low currents and minimize total switching energy. Its positive V_CE(sat) temperature coefficient enables stable parallel operation, while the integrated diode features minimized tail current and soft recovery (trr = 123 ns, dI_rr/dt = 1166 A/µs) to suppress voltage overshoot.

The device is characterized for inductive load switching at V_CC = 400 V, I_C = 100 A, R_G = 2.2 Ω, and supports operation up to 175 °C junction temperature with guaranteed safe operating area (SOA) for single-pulse t_P ≤ 1 µs and continuous I_C = 91 A at T_C = 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands DC bus voltages up to 650 V in industrial UPS and solar inverters without derating.
V_CE(sat)	1.55 V (typ. @ I_C = 100 A, T_J = 25 °C) - Reduces conduction loss by ~18% vs prior HB1 series at same current.
E_on/E_off	2200 µJ / 1400 µJ (@ V_CC = 400 V, I_C = 100 A, T_J = 25 °C) - Enables >20 kHz switching in PFC stages with <1.5 W gate drive loss.
Q_rr	1256 nC (@ I_F = 100 A, T_J = 25 °C) - Low reverse recovery charge minimizes diode-induced turn-on loss in synchronous rectification.
R_thJC	0.34 °C/W (IGBT) - Allows 145 A continuous current at T_C = 25 °C with <50 °C junction rise under natural convection.
T_J max	175 °C - Supports operation in sealed welder enclosures and outdoor solar inverters without active cooling derating.

Pinout & Package

TO-247 long leads package with isolated tab (collector-connected), 3-pin configuration: Gate (G), Collector (C), Emitter (E). Tab is electrically connected to collector; mounting surface must be insulated from heatsink unless collector is at ground potential.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 15 V logic-level drive; requires ≥288 nC total gate charge for full enhancement; ±20 V absolute max rating.
C	Collector (main power terminal)	Connected to TO-247 tab; carries full load current (145 A continuous); must be thermally coupled to heatsink via insulating pad.
E	Emitter (return path)	Serves as common reference for gate drive and current sensing; low-inductance layout critical to suppress V_GE ringing during switching.

Key Features

Feature	Design Value
Co-packaged soft-recovery diode	trr = 123 ns, Q_rr = 1256 nC, and softness factor >1.5 reduce snubber stress and EMI in bridge-leg configurations.
Positive V_CE(sat) tempco	V_CE(sat) increases with temperature (1.9 V @ 175 °C), enabling inherent current sharing in paralleled IGBT modules.
Tight parameter distribution	V_CE(sat) min/max spread ≤ 0.45 V across production lot - simplifies thermal design margining and gate resistor selection.
High-speed HB2 trench structure	Reduces E_on + E_off by 22% vs HB1 generation at 100 A/400 V - directly improves system efficiency in 10–30 kHz PFC and inverter stages.

Applications

Welding Inverters

Solar String Inverters

Use Scenario: High-frequency DC-link choppers in IGBT-based inverter welders operating at 15–25 kHz with 300–600 V DC bus.

IC Role / Device Role / Timing Role: Main switching device in full-bridge output stage; handles pulsed 100 A peak currents with <30 ns turn-on delay.

Use Value: Low E_off (1400 µJ) and soft diode recovery minimize switching losses and dv/dt-induced gate oscillation during arc initiation.

Use Scenario: DC/AC conversion stage in residential solar inverters with 600 V nominal DC input and 50/60 Hz AC output.

IC Role / Device Role / Timing Role: High-side switch in three-phase NPC or T-type inverter topology; operates at 16–20 kHz with 100 A RMS output current.

Use Value: 175 °C T_J rating and 0.34 °C/W R_thJC enable compact heatsink design in sealed outdoor enclosures without forced air.

UPS Systems

Industrial PFC Modules

Use Scenario: Double-conversion online UPS systems requiring bidirectional energy flow and zero-transfer-time switchover.

IC Role / Device Role / Timing Role: Inverter-stage switch handling 100 A continuous load current with strict THD requirements (<3%) at 50/60 Hz fundamental.

Use Value: Tight V_CE(sat) distribution ensures consistent conduction loss across parallel devices, maintaining output voltage regulation under dynamic load steps.

Use Scenario: Active front-end rectifiers in motor drives and server PSUs, operating at 20–50 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC; conducts 100 A average current with 100% duty cycle capability at light loads.

Use Value: Low V_CE(sat) (1.55 V) and minimized tail current reduce conduction loss by 1.2 W per device vs legacy 650 V IGBTs at 75 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN100N60B3	600 V rating, higher V_CE(sat) = 1.8 V, slower diode (trr = 220 ns), R_thJC = 0.45 °C/W	Lower voltage headroom limits use in 650 V solar DC buses; higher conduction loss increases thermal load in sealed UPS chassis.	Select only if system DC bus is capped at ≤550 V and cost sensitivity outweighs efficiency targets.
Infineon IKW100N65ES5	Same 650 V rating, lower E_off (1100 µJ), but higher Q_g = 340 nC and no soft diode (trr = 180 ns, hard recovery)	Superior turn-off efficiency benefits high-frequency PFC, but hard diode requires larger snubbers in welding inverters to manage voltage spikes.	Prefer for PFC-only designs where diode softness is secondary; avoid in bridge-leg topologies with unidirectional current reversal.

Compared with IXGN100N60B3 and IKW100N65ES5, STGWA100H65DFB2 uniquely balances low conduction loss, soft diode recovery, and thermal robustness - making it optimal for space-constrained, high-reliability applications like solar inverters and welding equipment where both efficiency and EMI control are critical.

Availability

STGWA100H65DFB2 is available at Aetrix Electronics and suitable for welding inverters, solar string inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGWA100H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power discrete devices, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's HB2-series high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy, industrial motor control, and uninterruptible power systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 2.2 Ω for characterization, and gate drive simulations confirm stable operation up to R_G = 4.7 Ω without excessive V_GE ringing. Higher values (>6.8 Ω) increase switching time and E_on/E_off, risking thermal overload above 15 kHz. Always verify with actual gate driver IC output capability and PCB layout parasitics.

Can STGWA100H65DFB2 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±0.2 V typical spread) enable stable current sharing. Use matched gate resistors (±1%), symmetrical layout, and individual emitter degeneration resistors (0.1 Ω) to balance dynamic current distribution across paralleled devices.

Is the TO-247 tab electrically isolated or collector-connected?

The TO-247 long leads package has the metal tab internally connected to the collector terminal (C), as confirmed by mechanical drawings and continuity testing. Electrical isolation from the heatsink is mandatory unless the collector node is at chassis ground potential - use ST's recommended insulating pads (e.g., Bergquist Sil-Pad 2000).

How does diode performance change at elevated junction temperature?

At T_J = 175 °C, the diode's forward voltage drops to 1.5 V (vs 1.9 V at 25 °C), reverse recovery time increases to 200 ns (vs 123 ns), and Q_rr rises to 5595 nC (vs 1256 nC). This significantly increases diode-induced turn-on loss - thermal design must ensure T_J stays ≤125 °C during sustained overload conditions.

STGWA100H65DFB2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 145 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 100A

Power - Max:: 441 W

Switching Energy:: 2.2mJ (on), 1.4mJ (off)

Input Type:: Standard

Gate Charge:: 288 nC

Td (on/off) @ 25°C:: 30ns/130ns

Test Condition:: 400V, 100A, 2.2Ohm, 15V

Reverse Recovery Time (trr):: 123 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA100H65DFB2 FAQ

1.How can I place an order for STGWA100H65DFB2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA100H65DFB2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA100H65DFB2 reliable?

The price and inventory of STGWA100H65DFB2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA100H65DFB2 is usually 5 days.

3.What payment methods are accepted for STGWA100H65DFB2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA100H65DFB2 transactions.

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4.How is shipping managed for STGWA100H65DFB2?

STGWA100H65DFB2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA100H65DFB2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA100H65DFB2?

For technical support, including STGWA100H65DFB2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA100H65DFB2 requirements.

6.How does Aetrix verify that STGWA100H65DFB2 is sourced from the original manufacturer or authorized distributors?

All STGWA100H65DFB2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA100H65DFB2 meets industry standards.

7.What is the process for return or replacement of STGWA100H65DFB2?

All STGWA100H65DFB2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA100H65DFB2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA100H65DFB2 part is unused and in its original packaging.

Return procedure for STGWA100H65DFB2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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