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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA15H120DF2

Name: STGWA15H120DF2
Brand: STMicroelectronics
SKU: STGWA15H120DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA15H120DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA15H120DF2.pdf

Description:: IGBT TRENCH FS 1200V 30A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA15H120DF2 from STMicroelectronics is a trench-gate field-stop IGBT with integrated fast-recovery antiparallel diode in TO-247 long leads package, rated for 1200 V V_CES, 15 A continuous collector current at T_C = 100 °C, and 2.1 V V_CE(sat) @ I_C = 15 A, TJ = 25 °C. It delivers high-speed switching with 5 μs short-circuit withstand time at T_J = 150 °C and supports safe paralleling in photovoltaic inverters and high-frequency converters.

For engineers reviewing the STGWA15H120DF2 datasheet, STGWA15H120DF2 pinout, STGWA15H120DF2 application, or STGWA15H120DF2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, diode reverse recovery performance (t_rr = 231 ns typ. @ T_J = 25 °C), thermal resistance (R_thJC = 0.58 °C/W for IGBT), gate charge (Q_g = 67 nC), and safe operating area under pulsed conditions.

Technical Context

This IGBT employs ST's H-series trench gate field-stop architecture to balance conduction and switching losses-enabling high-efficiency operation up to 20 kHz in hard-switched topologies. Its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution ensure stable current sharing during parallel operation.

The integrated diode features very fast recovery (t_rr = 231 ns typ., Q_rr = 0.72 µC @ T_J = 25 °C) and low forward voltage (V_F = 3.5 V typ. @ I_F = 25 A), minimizing commutation losses in bidirectional power stages such as three-phase PFC and inverter legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Withstands DC bus voltages up to 1200 V in industrial PV and UPS systems without breakdown.
I_C (continuous, T_C = 100 °C)	15 A - Sustains full-load current at elevated heatsink temperatures common in enclosed power enclosures.
V_CE(sat)	2.1 V @ I_C = 15 A, T_J = 25 °C - Low conduction loss enables <1.5 W static dissipation per device at rated current.
t_sc	5 µs @ V_CE = 600 V, T_J = 150 °C - Enables robust short-circuit protection using standard gate driver desaturation detection.
Q_g	67 nC - Determines gate drive power requirement (~1.0 W @ 15 kHz, V_GE swing = 30 V).
R_thJC (IGBT)	0.58 °C/W - Enables direct mounting to heatsinks with predictable junction-to-case thermal drop for thermal design.
t_rr (diode)	231 ns typ. @ I_F = 15 A, dI/dt = 1000 A/µs - Limits voltage overshoot and EMI during freewheeling transitions in bridge configurations.

Pinout & Package

STGWA15H120DF2 uses the TO-247 long leads package (mechanical dimensions per Table 8, DS9296 Rev 6), optimized for manual insertion and improved creepage in high-voltage PCB layouts. The lead length (L = 19.8–20.1 mm) supports through-hole mounting with enhanced mechanical stability and thermal path integrity.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power output node	Connects to DC bus or inductive load; carries full switched current and must be routed with low-inductance layout.
2 (Gate)	Control input	Requires low-impedance gate driver (RG ≤ 10 Ω typical) to achieve specified t_d(on)/t_d(off) and minimize Miller-induced shoot-through risk.
3 (Emitter)	Power return and reference	Serves as common emitter for IGBT and cathode connection point for integrated diode; must be low-inductance ground path for switching stability.

Key Features

Feature	Design Value
Minimized tail current	Reduces turn-off energy (E_off = 0.37 mJ typ.) and enables faster switching without excessive dv/dt stress.
Safe paralleling capability	Enabled by positive V_CE(sat) tempco and tight parameter spread-allows current sharing within ±10% across multiple devices.
Very fast recovery antiparallel diode	t_rr = 231 ns / Q_rr = 0.72 µC reduces reverse recovery losses and eliminates need for external snubbers in many designs.
High-speed switching series	Turn-on delay t_d(on) = 23 ns and turn-off delay t_d(off) = 111 ns support >15 kHz PWM in hard-switched converters.
5 µs short-circuit withstand time	Allows use with standard desaturation protection circuits without requiring ultra-fast (<1 µs) fault response.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply (UPS)

Use Scenario: DC-to-AC conversion stage in string inverters handling 5–10 kW per phase.

IC Role / Device Role / Timing Role: High-side/low-side switch in three-phase IGBT bridge, switching at 16 kHz with sinusoidal PWM.

Use Value: Low V_CE(sat) and fast diode reduce conduction + commutation losses, improving inverter efficiency to >98.5% at full load.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified DC bus.

IC Role / Device Role / Timing Role: Inverter leg switch enabling zero-transfer-time switchover between utility and battery sources.

Use Value: 5 µs short-circuit rating ensures reliable operation during grid fault transients without device failure.

Welding Equipment

Power Factor Correction (PFC)

Use Scenario: Primary-side IGBT in inverter-based arc welding machines with 20–50 kHz resonant topology.

IC Role / Device Role / Timing Role: Main switching element controlling high-current DC output via variable frequency modulation.

Use Value: Low R_thJC (0.58 °C/W) maintains T_J < 150 °C under 100% duty-cycle bursts, extending service life.

Use Scenario: Boost switch in active front-end PFC stage for industrial motor drives (3–15 kW).

IC Role / Device Role / Timing Role: High-voltage switch managing 1200 V DC link with discontinuous/continuous conduction mode control.

Use Value: Tight V_CE(sat) distribution enables parallel configuration for higher current capacity while maintaining thermal balance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN150N120A3	Higher V_CE(sat) (2.4 V @ 15 A), lower Q_g (45 nC), TO-247-3L package without long leads.	Better suited for ultra-high-frequency (>30 kHz) resonant converters where gate drive loss dominates.	Prefer when minimizing gate drive power is critical and board layout allows standard TO-247 footprint.
Infineon IKW15N120T2	Lower V_CE(sat) (1.95 V @ 15 A), slower diode (t_rr = 320 ns), same TO-247 long leads mechanical form factor.	Optimized for lower conduction-loss priority in medium-frequency (<10 kHz) industrial drives.	Choose when thermal margin is constrained and diode recovery speed is secondary to V_CE(sat).

Compared with IXGN150N120A3 and IKW15N120T2, STGWA15H120DF2 offers the best balance of low conduction loss, fast diode recovery, and short-circuit ruggedness-making it optimal for high-efficiency, high-reliability solar and UPS inverters where both switching and conduction losses matter.

Availability

STGWA15H120DF2 is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, welding equipment, and power factor correction systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGWA15H120DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGWA15H120DF2 belongs to ST's H-series trench-gate field-stop IGBT product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy and industrial UPS applications.

FAQ

What is the maximum allowable gate-emitter voltage for STGWA15H120DF2?

The absolute maximum V_GE is ±20 V for continuous operation, with transient tolerance up to ±30 V for pulses ≤10 µs and duty cycle ≤1%. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift, especially at elevated junction temperatures.

Does STGWA15H120DF2 require a negative gate voltage for reliable turn-off?

No-STGWA15H120DF2 is fully characterized for 0 V turn-off (V_GE = 0 V) and does not require negative bias. However, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-dv/dt environments like multi-level inverters.

How does the integrated diode differ from discrete ultrafast diodes in performance?

The monolithically integrated diode shares the same die substrate and thermal environment as the IGBT, resulting in matched temperature coefficients and reduced parasitic inductance. Its t_rr (231 ns) and Q_rr (0.72 µC) are comparable to discrete 15 A ultrafast diodes but with tighter parameter correlation and no bond-wire inductance penalty.

Can STGWA15H120DF2 be paralleled with STGW15H120DF2?

Yes-both share identical electrical specifications, thermal characteristics, and pinout. The only difference is lead length (long leads vs. standard TO-247), so mechanical mounting differs, but electrical paralleling is fully supported with matched gate drive and symmetrical layout.

STGWA15H120DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 15A

Power - Max:: 259 W

Switching Energy:: 380µJ (on), 370µJ (off)

Input Type:: Standard

Gate Charge:: 67 nC

Td (on/off) @ 25°C:: 23ns/111ns

Test Condition:: 600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr):: 231 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGWA15H120DF2 FAQ

1.How can I place an order for STGWA15H120DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA15H120DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA15H120DF2 reliable?

The price and inventory of STGWA15H120DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA15H120DF2 is usually 5 days.

3.What payment methods are accepted for STGWA15H120DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA15H120DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA15H120DF2?

STGWA15H120DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA15H120DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA15H120DF2?

For technical support, including STGWA15H120DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA15H120DF2 requirements.

6.How does Aetrix verify that STGWA15H120DF2 is sourced from the original manufacturer or authorized distributors?

All STGWA15H120DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA15H120DF2 meets industry standards.

7.What is the process for return or replacement of STGWA15H120DF2?

All STGWA15H120DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA15H120DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA15H120DF2 part is unused and in its original packaging.

Return procedure for STGWA15H120DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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