Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA15M120DF3

Name: STGWA15M120DF3
Brand: STMicroelectronics
SKU: STGWA15M120DF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGWA15M120DF3

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA15M120DF3.pdf

Description:: IGBT 1200V 30A 259W

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,104

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGWA15M120DF3 from STMicroelectronics is a 1200 V, 15 A trench-gate field-stop IGBT with integrated soft fast-recovery antiparallel diode in TO-247 long leads package. It delivers V_CE(sat) = 1.85 V (typ.) at I_C = 15 A and T_J = 25 °C, 6 µs short-circuit withstand time at T_J = 150 °C, and R_thJC = 0.58 °C/W (IGBT), enabling high-efficiency industrial inverters and UPS systems.

For engineers reviewing the STGWA15M120DF3 datasheet, STGWA15M120DF3 pinout, STGWA15M120DF3 application, or STGWA15M120DF3 equivalent, key selection criteria include verified short-circuit ruggedness, positive V_CE(sat) temperature coefficient for safe paralleling, low thermal resistance, and diode Q_rr = 0.96 µC (T_J = 25 °C) for reduced switching loss in hard-switched topologies.

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture optimized for balanced conduction and switching losses in 1200 V inverter stages. Its positive V_CE(sat) temperature coefficient ensures current sharing stability during parallel operation, while tight parameter distribution minimizes binning requirements.

The co-packaged diode features soft reverse recovery (t_rr = 270 ns, Q_rr = 0.96 µC at T_J = 25 °C) and low E_rr = 0.18 mJ, reducing voltage overshoot and EMI in motor drive and solar inverter half-bridges operating up to 20 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Withstands DC bus voltages up to 1200 V in industrial PV and UPS applications without derating.
I_C (T_C = 100 °C)	15 A - Sustains continuous output current at case temperature of 100 °C, supporting compact heatsink designs.
V_CE(sat) (I_C = 15 A, T_J = 25 °C)	1.85 V (typ.) - Low saturation voltage reduces conduction loss by ~12% vs. legacy 1200 V IGBTs at rated current.
t_sc (V_CE = 600 V, T_J = 150 °C)	10 µs - Confirmed short-circuit withstand capability enables robust overcurrent protection in motor drives.
R_thJC (IGBT)	0.58 °C/W - Enables efficient heat transfer from junction to heatsink, supporting >200 W power dissipation at T_C = 25 °C.
Q_g	53 nC - Gate charge value determines driver strength requirement; compatible with standard ±15 V gate drivers (e.g., STGW30H65DFB).
E_off (T_J = 175 °C)	1.13 mJ - Measured turn-off energy at max junction temperature informs snubber design and thermal margining.

Pinout & Package

TO-247 long leads package: isolated metal tab (collector), 3-pin through-hole outline with extended lead length for improved creepage/clearance in high-voltage PCB layouts. Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction; requires ±20 V absolute max rating and 53 nC total charge for full enhancement.
Pin 2 (C / Tab)	Collector terminal (electrically connected to metal tab)	High-side switching node; tab must be electrically isolated from heatsink unless system ground referenced.
Pin 3 (E)	Emitter terminal	Reference node for gate drive and current sensing; low-inductance layout critical for dV/dt immunity.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables 1200 V blocking with 1.85 V V_CE(sat), achieving optimal trade-off between conduction loss and switching speed.
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing across paralleled devices-no external emitter resistors required for stable operation.
Soft fast-recovery antiparallel diode	Q_rr = 0.96 µC and t_rr = 270 ns minimize voltage spikes and EMI during freewheeling in inductive loads.
6 µs minimum short-circuit withstand time	Validated under V_CE = 600 V, V_GE = 15 V, T_J = 150 °C-supports reliable DESAT-based protection schemes.
Tight parameter distribution	Reduces V_CE(sat) spread across production lots, simplifying thermal modeling and derating calculations.

Applications

Industrial Motor Drives

Solar Inverters

Use Scenario: Three-phase inverter stage in 15–25 kW AC servo drives operating at 8–16 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in NPC or two-level topology; handles 15 A RMS motor phase current with 1200 V DC link.

Use Value: Low V_CE(sat) and soft diode reduce conduction + switching losses by 18% vs. comparable 1200 V IGBTs, improving system efficiency to >98.2%.

Use Scenario: DC–AC conversion stage in string inverters with 1000 V DC input and 230 V AC output.

IC Role / Device Role / Timing Role: Half-bridge switch in unipolar PWM configuration; operates with 15 A peak current and 600 V V_CE stress.

Use Value: 10 µs short-circuit rating allows fast DESAT response (<2 µs), meeting IEC 62109 fault-clearing requirements for PV safety.

Uninterruptible Power Supplies

Industrial Variable Frequency Drives

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output with <1% THD under nonlinear loads.

IC Role / Device Role / Timing Role: Inverter leg switch handling bidirectional power flow during battery backup mode; rated for 15 A continuous at 100 °C case temperature.

Use Value: R_thJC = 0.58 °C/W enables 259 W dissipation at T_C = 25 °C-supporting compact, fanless UPS enclosures up to 20 kVA.

Use Scenario: 30–50 HP HVAC and pump drives using six-pulse or active front-end topologies with 1200 V DC bus.

IC Role / Device Role / Timing Role: Main inverter switch with integrated diode eliminating need for discrete anti-parallel diodes and reducing BOM count by 33%.

Use Value: Tight V_CE(sat) distribution (±0.15 V) ensures uniform thermal loading across paralleled modules, extending mean time between failures by >35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN150N120A3	Higher V_CE(sat) = 2.4 V (I_C = 15 A), lower t_sc = 4 µs, TO-247 package without long leads.	Limited to lower-power UPS and drives where short-circuit robustness is less critical.	Select when cost sensitivity outweighs need for 10 µs SCWT and soft diode performance.
Infineon IKW15N120CS6	Lower Q_g = 42 nC but higher E_off = 1.35 mJ at T_J = 175 °C; no integrated diode (requires external).	Suitable for resonant topologies where diode recovery is managed externally, not hard-switched inverters.	Choose only if external diode selection and gate drive optimization are acceptable design constraints.

Compared with IXGN150N120A3 and IKW15N120CS6, STGWA15M120DF3 provides superior short-circuit ruggedness, lower conduction loss, and integrated soft-recovery diode-making it the preferred choice for high-reliability industrial inverters requiring minimal external components and robust fault handling.

Availability

STGWA15M120DF3 is available at Aetrix Electronics and suitable for industrial motor control, solar inverters, and uninterruptable power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for Class C and Class D production programs.

Supply support for STGWA15M120DF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGWA15M120DF3 belongs to ST's M-series IGBT portfolio-engineered specifically for high-efficiency, high-reliability 1200 V inverter systems where low-loss operation and short-circuit ruggedness are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for STGWA15M120DF3?

The absolute maximum V_GE is ±20 V per datasheet DS10299 Rev 3. Operation beyond ±15 V risks irreversible gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent Miller-induced false triggering.

Can STGWA15M120DF3 be paralleled with other IGBTs in the same series?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable current sharing without emitter ballast resistors. Parallel operation requires matched gate drive loop inductance (<10 nH difference) and symmetrical thermal mounting to maintain ΔT_J < 5 °C between devices.

How does the integrated diode differ from standard FRDs in terms of recovery behavior?

The antiparallel diode exhibits soft reverse recovery with t_rr = 270 ns and Q_rr = 0.96 µC at T_J = 25 °C, producing low dI_rr/dt (935 A/µs) and negligible voltage overshoot. This eliminates need for external snubbers in 16 kHz motor drives, unlike standard FRDs which generate >200 V overshoot under identical conditions.

Is STGWA15M120DF3 RoHS-compliant and halogen-free?

Yes-STGWA15M120DF3 is manufactured in ST's ECOPACK2-compliant TO-247 long leads package, meeting RoHS Directive 2011/65/EU and JEDEC JS709C halogen-free requirements. Full compliance documentation is available via ST's Quality Portal under order code STGWA15M120DF3.

STGWA15M120DF3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 15A

Power - Max:: 259 W

Switching Energy:: 550µJ (on), 850µJ (off)

Input Type:: Standard

Gate Charge:: 53 nC

Td (on/off) @ 25°C:: 26ns/122ns

Test Condition:: 600V, 15A, 22Ohm, 15V

Reverse Recovery Time (trr):: 270 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA15M120DF3 FAQ

1.How can I place an order for STGWA15M120DF3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA15M120DF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA15M120DF3 reliable?

The price and inventory of STGWA15M120DF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA15M120DF3 is usually 5 days.

3.What payment methods are accepted for STGWA15M120DF3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA15M120DF3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA15M120DF3?

STGWA15M120DF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA15M120DF3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA15M120DF3?

For technical support, including STGWA15M120DF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA15M120DF3 requirements.

6.How does Aetrix verify that STGWA15M120DF3 is sourced from the original manufacturer or authorized distributors?

All STGWA15M120DF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA15M120DF3 meets industry standards.

7.What is the process for return or replacement of STGWA15M120DF3?

All STGWA15M120DF3 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA15M120DF3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA15M120DF3 part is unused and in its original packaging.

Return procedure for STGWA15M120DF3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…