STMicroelectronics STGWA20H65DFB2

Overview

STGWA20H65DFB2 from STMicroelectronics is a 650 V, 20 A high-speed trench gate field-stop IGBT with co-packaged soft-recovery diode in TO-247 long leads package. It delivers low V_CE(sat) = 1.65 V (typ.) at I_C = 20 A and T_J = 25 °C, 175 °C maximum junction temperature, and fast switching with E_on = 265 µJ and E_off = 214 µJ (T_J = 25 °C) for high-efficiency PFC and solar inverter stages.

For engineers reviewing the STGWA20H65DFB2 datasheet, STGWA20H65DFB2 pinout, STGWA20H65DFB2 application, or STGWA20H65DFB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, diode reverse recovery charge (Q_rr = 970 nC typ.), thermal resistance R_thJC = 1.02 °C/W, and gate charge Q_g = 56 nC - all critical for thermal management and gate drive sizing in DC fast charging and UPS designs.

Technical Context

This IGBT employs ST's proprietary HB2 trench gate field-stop structure optimized for conduction loss reduction at low-to-moderate currents and minimized switching energy. Its positive V_CE(sat) temperature coefficient enables stable parallel operation, while tight parameter distribution ensures consistent system-level performance across production batches.

The integrated antiparallel diode features very fast and soft recovery (t_rr = 215 ns typ., Q_rr = 970 nC typ. at T_J = 25 °C), minimized tail current, and low forward voltage (V_F = 1.65 V typ. at I_F = 20 A), directly supporting high-frequency, zero-voltage transition (ZVT) and hard-switched topologies in welding and string inverters.

Key Specifications

Pinout & Package

TO-247 long leads package (JEDEC TO-247-3L) with isolated tab; case material: epoxy resin; lead finish: matte tin; RoHS-compliant ECOPACK2 grade.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Compared with IXGN20N60B3 and IKW20N60T, STGWA20H65DFB2 offers the lowest combined conduction–switching loss profile at 20–25 kHz, making it optimal for thermally constrained, high-efficiency applications like DC fast charging and central inverters where thermal resistance and Q_rr dominate system-level BOM cost.

Availability

STGWA20H65DFB2 is available at Aetrix Electronics and suitable for welding power supplies, solar string inverters, uninterruptible power supplies (UPS), and EV DC fast charging stations requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STGWA20H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STGWA20H65DFB2 belongs to the HB2 series of high-speed trench gate field-stop IGBTs, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy, industrial motor drives, and EV infrastructure.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 25 kHz?

A 10 Ω gate resistor is specified in the datasheet for test conditions yielding t_d(on) = 16 ns and t_f = 35 ns at T_J = 25 °C. For 25 kHz operation with 50% duty cycle, 10 Ω maintains safe dv/dt (<15 V/ns) and limits E_on to 556 µJ at T_J = 175 °C. Lower values increase peak gate current but risk oscillation; higher values raise switching losses disproportionately.

Can STGWA20H65DFB2 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient ensures inherent current sharing across paralleled devices. Datasheet measurements show <±3% current imbalance at I_C = 40 A total with matched gate drive and symmetrical layout. Thermal coupling via shared heatsink and identical gate trace lengths are mandatory to maintain balance.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous collector current is rated at 25 A (Table 1). The Forward Bias SOA curve (Figure 7) confirms single-pulse operation up to 40 A at V_CE = 200 V for t_p = 100 µs, but sustained operation above 25 A requires active cooling to maintain T_J ≤ 175 °C per Figure 2.

How does the diode's reverse recovery performance change at elevated temperature?

At T_J = 175 °C, t_rr increases to 330 ns (vs 215 ns at 25 °C), Q_rr rises to 2772 nC (vs 970 nC), and E_rr reaches 866 µJ (vs 293 µJ). This 185% Q_rr increase elevates turn-off loss and demands stronger snubbing or reduced dI/dt in high-temperature operation.