STMicroelectronics STGWA20HP65FB2

Overview

STGWA20HP65FB2 from STMicroelectronics is a 650 V, 20 A high-speed trench gate field-stop IGBT in TO-247 long leads package, co-packaged with an antiparallel protection diode. It delivers low V_CE(sat) = 1.65 V (typ.) at I_C = 20 A and T_J = 25 °C, tight parameter distribution, and minimized tail current - optimized for fast-switching power factor correction and welding inverters.

For engineers reviewing the STGWA20HP65FB2 datasheet, STGWA20HP65FB2 pinout, STGWA20HP65FB2 application, or STGWA20HP65FB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, E_off = 214 µJ (T_J = 25 °C), R_thJC = 1.02 °C/W (IGBT), reverse recovery charge Q_rr = 21 nC, and TO-247 thermal interface compatibility.

Technical Context

This IGBT employs ST's proprietary HB2 series trench gate field-stop structure, engineered to reduce conduction losses at low currents and lower total switching energy versus prior generations. Its positive V_CE(sat) temperature coefficient enables stable parallel operation, while the integrated diode features soft reverse recovery (t_rr = 140 ns, Q_rr = 21 nC) and low dI_rr/dt (430 A/µs) under 1000 A/µs di/dt stress.

The device operates across T_J = –55 to 175 °C, supports ±20 V gate drive, and maintains safe operating area up to 100 µs pulse width at V_CE = 50 V and I_C = 40 A. Its C_ies = 1010 pF and Q_g = 56 nC enable predictable gate drive design with 10 Ω external resistance.

Key Specifications

Pinout & Package

STGWA20HP65FB2 uses a TO-247 long leads package with isolated tab (collector-connected). The package provides mechanical robustness for high-vibration environments and facilitates direct mounting to heatsinks via the metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IXGH20N60B3D1 and IKP20N60T6, STGWA20HP65FB2 uniquely combines 650 V rating, lowest E_off at high temperature, and softest diode recovery - making it optimal for thermally demanding, high-di/dt welding and PFC designs where reliability trumps marginal conduction gain.

Availability

STGWA20HP65FB2 is available at Aetrix Electronics and suitable for welding inverters, active power factor correction modules, and induction heating systems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STGWA20HP65FB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's HB2-series high-speed IGBT product line, developed specifically to improve efficiency and thermal robustness in high-frequency industrial power conversion - especially where fast switching, low tail current, and integrated diode functionality are critical.

FAQ

What is the maximum continuous collector current at 100 °C case temperature?

The STGWA20HP65FB2 supports 25 A continuous collector current at T_C = 100 °C, as specified in Table 1 of DS13334 Rev 3. This rating reflects derating due to thermal limits and assumes proper heatsinking with R_thJC = 1.02 °C/W and junction temperature held ≤175 °C.

Does this IGBT include an integrated diode, and what are its key recovery parameters?

Yes - it integrates an antiparallel diode rated for 5 A continuous forward current. Key recovery specs at T_J = 25 °C are: t_rr = 140 ns, Q_rr = 21 nC, I_rrm = 6.6 A, and dI_rr/dt = 430 A/µs (per Table 6). At 175 °C, Q_rr rises to 47.3 nC but remains soft and controllable.

What gate resistor value is recommended for 400 V, 20 A switching with minimal E_off?

A 10 Ω external gate resistor is used in the reference test circuit (Figure 25) and yields t_d(off) = 78.8 ns and E_off = 214 µJ at T_J = 25 °C. Lower values (e.g., 5 Ω) reduce t_d(off) but increase EMI and gate driver stress; higher values (e.g., 22 Ω) raise E_off by ~30%.

Can STGWA20HP65FB2 be paralleled reliably, and what design measures support this?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing. Recommended practices include matched gate drive paths, Kelvin emitter connections, symmetrical PCB layout, and individual 10 Ω gate resistors to damp oscillation and equalize switching timing.