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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA25H120F2

Name: STGWA25H120F2
Brand: STMicroelectronics
SKU: STGWA25H120F2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA25H120F2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA25H120F2.pdf

Description:: IGBT HB 1200V 25A HS TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,887

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Product details

Overview

STGWA25H120F2 from STMicroelectronics is a 1200 V, 25 A trench-gate field-stop IGBT in the H-series optimized for high-frequency converters, featuring 2.1 V typical V_CE(sat) at 25 A, 5 µs short-circuit withstand time at T_J = 150 °C, and R_thJC = 0.4 °C/W - deployed in photovoltaic inverters and UPS systems.

For engineers reviewing the STGWA25H120F2 datasheet, STGWA25H120F2 pinout, STGWA25H120F2 application, or STGWA25H120F2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, switching energy (E_on/E_off), safe paralleling capability, and TO-247 long leads thermal performance under 175 °C junction operation.

Technical Context

This IGBT employs a trench gate with field-stop layer to balance conduction loss (low V_CE(sat)) and switching loss (fast t_d(off) = 130 ns, t_f = 106 ns at 25 °C), enabling >20 kHz operation in PFC and inverter stages. Its slightly positive V_CE(sat) temperature coefficient ensures current sharing stability during parallel operation.

Dynamic behavior is characterized by low C_ies (2010 pF) and C_res (49 pF), supporting clean gate drive design with Q_g = 100 nC and Q_gc = 52 nC - critical for minimizing Miller-induced shoot-through in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - supports DC-link voltages up to 1000 V in 3-phase inverters with margin for voltage transients
I_C (T_C = 100 °C)	25 A - continuous output current rating at industrial case temperature, defining thermal derating envelope
V_CE(sat) (T_J = 175 °C)	2.5 V - conduction loss increases only 0.4 V from 25 °C to 175 °C, enabling predictable thermal management
E_off (T_J = 175 °C)	1.65 mJ - turn-off energy doubles vs. 25 °C, directly impacting heatsink sizing in high-temp environments
t_sc	5 µs - short-circuit withstand time at V_CE = 600 V and T_J = 150 °C, enabling robust fault protection without external desat detection
R_thJC	0.4 °C/W - low junction-to-case thermal resistance allows efficient heat transfer to heatsink in TO-247 long leads package
Q_g	100 nC - total gate charge determines required gate driver peak current (e.g., 10 A for 10 ns rise time)

Pinout & Package

STGWA25H120F2 uses the TO-247 long leads package (mechanical dimensions per Table 7, DS10211 Rev 5), offering enhanced creepage distance and improved mechanical stability for high-voltage power modules.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate terminal	Controls IGBT conduction; requires ±20 V absolute max rating and 100 nC total charge for full enhancement
C (Pin 2 + Tab)	Collector terminal	Main high-side current path; tab is electrically connected to collector and serves as primary thermal interface
E (Pin 3)	Emitter terminal	Low-side reference for gate drive; must be routed with minimal inductance to suppress voltage spikes during switching

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables simultaneous optimization of V_CE(sat) (2.1 V) and switching speed (t_d(off) = 130 ns), reducing total losses in 10–50 kHz converters
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing across paralleled devices without external current-sensing or active gate control
5 µs short-circuit withstand time	Allows use in applications requiring intrinsic fault tolerance (e.g., welding inverters) without additional desaturation circuitry
Low thermal resistance (R_thJC = 0.4 °C/W)	Reduces junction temperature rise by ~150 °C per 100 W dissipation, extending lifetime in sealed enclosures
Tight parameter distribution	Minimizes binning requirements and enables direct replacement across production lots without requalification

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC at 16–25 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT in NPC or T-type three-level topology handling 1000 V DC-link and delivering 25 A RMS output current.

Use Value: Low E_off (1.65 mJ @ 175 °C) and stable V_CE(sat) reduce thermal cycling stress on heatsinks over 25-year field life.

Use Scenario: Online double-conversion UPS systems operating continuously at 10–20 kHz with strict THD and efficiency targets.

IC Role / Device Role / Timing Role: Inverter-stage switch managing bidirectional power flow between battery bank and AC output with zero transfer time.

Use Value: Safe paralleling capability allows redundant 25 A units to share load without current imbalance, improving system MTBF.

Welding Equipment

Power Factor Correction

Use Scenario: IGBT-based inverter welders delivering pulsed 100 A peak output with rapid duty-cycle transitions.

IC Role / Device Role / Timing Role: Primary switching device in resonant DC-DC stage regulating arc voltage and current with microsecond-level timing precision.

Use Value: 5 µs short-circuit withstand time tolerates arc re-ignition transients without latch-up or destruction.

Use Scenario: Active front-end PFC in industrial motor drives, operating at 30–50 kHz to meet IEC 61000-3-2 Class A harmonic limits.

IC Role / Device Role / Timing Role: Boost switch controlling inductor current shape to force sinusoidal input current aligned with line voltage.

Use Value: Minimized tail current reduces conduction loss during diode commutation, increasing PFC efficiency from 97.2% to 97.8% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3	Higher I_C (50 A), higher V_CE(sat) (2.7 V typ.), slower t_f (220 ns), no specified t_sc	Better suited for lower-frequency (<10 kHz), higher-current motor drives where conduction loss dominates	Select when system prioritizes current headroom over switching loss and lacks short-circuit protection circuitry
Infineon IKW25N120T2	Lower Q_g (65 nC), faster t_d(on) (22 ns), but higher E_off (2.1 mJ @ 175 °C), same R_thJC	Optimized for soft-switching topologies where gate drive loss matters more than turn-off energy	Select when using ZVS/ZCS techniques and gate driver power budget is constrained

Compared with IXGN50N120B3 and IKW25N120T2, STGWA25H120F2 delivers superior trade-off between switching energy (1.3 mJ total at 25 °C), short-circuit ruggedness (5 µs), and thermal resistance (0.4 °C/W), making it optimal for high-reliability, high-frequency industrial inverters.

Availability

STGWA25H120F2 is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for STGWA25H120F2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STGWA25H120F2 belongs to the H-series IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control systems.

FAQ

What is the maximum allowable gate-emitter voltage for STGWA25H120F2?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V for reliable turn-on/turn-off. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller coupling during high dv/dt events.

Does STGWA25H120F2 include an integrated anti-parallel diode?

No - STGWA25H120F2 is a discrete IGBT die in TO-247 long leads package with no monolithically integrated freewheeling diode. External ultrafast diodes (e.g., STTH30L06D) must be used in inductive switching applications to handle reverse recovery current and prevent destructive voltage overshoot.

How does junction temperature affect V_CE(sat) in this IGBT?

V_CE(sat) increases linearly with junction temperature: from 2.1 V at 25 °C to 2.5 V at 175 °C (typical). This slight positive coefficient improves current sharing in paralleled configurations and avoids thermal runaway, unlike negative-coefficient devices that require active current balancing.

Can STGWA25H120F2 be directly substituted for STGW25H120F2?

Yes - STGWA25H120F2 is the long-leads variant of STGW25H120F2, sharing identical electrical characteristics, thermal ratings, and pinout (G-C-E). The longer leads improve solder joint reliability and mechanical strain relief in high-vibration environments, with no circuit redesign required.

STGWA25H120F2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 100 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 25A

Power - Max:: 375 W

Switching Energy:: 600µJ (on), 700µJ (off)

Input Type:: Standard

Gate Charge:: 100 nC

Td (on/off) @ 25°C:: 29ns/130ns

Test Condition:: 600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGWA25H120F2 FAQ

1.How can I place an order for STGWA25H120F2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA25H120F2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA25H120F2 reliable?

The price and inventory of STGWA25H120F2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA25H120F2 is usually 5 days.

3.What payment methods are accepted for STGWA25H120F2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA25H120F2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA25H120F2?

STGWA25H120F2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA25H120F2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA25H120F2?

For technical support, including STGWA25H120F2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA25H120F2 requirements.

6.How does Aetrix verify that STGWA25H120F2 is sourced from the original manufacturer or authorized distributors?

All STGWA25H120F2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA25H120F2 meets industry standards.

7.What is the process for return or replacement of STGWA25H120F2?

All STGWA25H120F2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA25H120F2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA25H120F2 part is unused and in its original packaging.

Return procedure for STGWA25H120F2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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