Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA25IH135DF2

Name: STGWA25IH135DF2
Brand: STMicroelectronics
SKU: STGWA25IH135DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGWA25IH135DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA25IH135DF2.pdf

Description:: IGBT TRENCH FS 1.35KV 50A TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:46

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGWA25IH135DF2 from STMicroelectronics is a 1350 V, 25 A trench gate field-stop IGBT with co-packaged soft-recovery freewheeling diode in TO-247 long leads package, optimized for zero-voltage/zero-current switching in resonant topologies. It delivers V_CE(sat) = 1.7 V (typ.) at I_C = 20 A, T_J = 25 °C, 175 °C max junction temperature, and minimized tail current for induction heating inverters.

For engineers reviewing the STGWA25IH135DF2 datasheet, STGWA25IH135DF2 pinout, STGWA25IH135DF2 application, or STGWA25IH135DF2 equivalent, key selection criteria include soft-switching E_off performance at 175 °C, co-packaged diode VF of 1.15 V at I_F = 20 A, tight parameter distribution, and R_thJC = 0.36 °C/W for thermal management in high-frequency resonant converters.

Technical Context

This IGBT employs ST's IH2 series trench gate field-stop structure, balancing conduction loss (low V_CE(sat)) and switching loss (low E_off, minimized tail current) specifically for soft-commutation waveforms. Its positive V_CE(sat) temperature coefficient enables inherent current sharing in parallel configurations.

The integrated diode features very low forward drop (V_F = 1.15 V typ. at I_F = 20 A, T_J = 25 °C) and soft recovery characteristics, reducing voltage overshoot and EMI in snubbed inductive loads. Thermal resistance values-R_thJC(IGBT) = 0.36 °C/W and R_thJC(diode) = 0.97 °C/W-are validated per JEDEC JESD51-14 standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1350 V - Withstands 1350 V collector-emitter blocking voltage under gate-open conditions, enabling use in 1000–1200 V DC bus resonant systems.
I_C (cont., T_C = 100 °C)	25 A - Sustains 25 A continuous collector current at case temperature 100 °C, supporting high-power induction heating operation without derating.
V_CE(sat) (T_J = 175 °C)	2.1 V - Confirmed saturation voltage at maximum operating junction temperature, critical for conduction loss calculation in thermal-limited designs.
E_off (T_J = 175 °C)	1.9 mJ - Measured turn-off energy under worst-case thermal condition (V_CC = 600 V, I_C = 20 A, R_G = 10 Ω), directly impacts heatsink sizing in soft-switched converters.
R_thJC (IGBT)	0.36 °C/W - Junction-to-case thermal resistance enables precise thermal modeling for PCB copper area and heatsink interface design.
V_F (diode, T_J = 175 °C)	1.10 V - Forward voltage remains stable across full temperature range, ensuring predictable freewheeling loss and minimal reverse recovery charge.
Q_gc	60 nC - Gate-collector charge value determines Miller effect sensitivity and gate drive strength requirements for reliable hard-soft transition control.

Pinout & Package

TO-247 long leads package with isolated tab (collector-connected), standard three-terminal configuration. Mounting hole accommodates M3 screw; leads are tinned and suitable for wave or selective soldering.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal requiring ±20 V absolute max rating; 166 nC total gate charge mandates robust 15 V gate driver with ≥2 A peak sourcing/sinking capability.
C (Pin 2, Tab)	Collector	Main high-side power terminal; electrically connected to metal tab-must be insulated from heatsink unless system-level common-collector topology is used.
E (Pin 3)	Emitter	Reference node for gate drive and current sensing; low-inductance layout essential to avoid false triggering during fast dI/dt transitions (>1 kA/μs).

Key Features

Feature	Design Value
Soft-commutation optimization	Tail current reduced by >40% vs prior IH1 generation, lowering E_off and enabling higher frequency operation in LLC and ZVS-PWM converters.
Tight parameter distribution	V_CE(sat) and V_GE(th) spread ≤ ±5%, allowing reliable paralleling of up to four devices without active current balancing.
Co-packaged diode	Low-V_F (1.15 V) soft-recovery diode eliminates need for external anti-parallel diode, reducing BOM count and layout complexity in half-bridge modules.
Positive V_CE(sat) tempco	Enables natural current sharing in parallel configurations without external emitter resistors, simplifying high-current inverter scaling.
175 °C max junction rating	Supports sustained operation in enclosed induction heating cabinets where ambient temperatures exceed 85 °C, extending reliability beyond industrial grade limits.

Applications

Induction Heating Inverters

Resonant Microwave Oven Power Stages

Use Scenario: High-frequency (20–100 kHz) series-resonant inverter driving copper coil for cooktop heating.

IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration; handles bidirectional reactive current and zero-voltage switching transitions.

Use Value: Minimized tail current reduces conduction overlap loss during commutation, improving system efficiency from 92% to 94.5% at full load.

Use Scenario: 2.45 GHz magnetron power supply using asymmetrical half-bridge with variable frequency control.

IC Role / Device Role / Timing Role: High-side switch in resonant tank circuit; operates in soft-switched mode to limit EMI and stress on snubber components.

Use Value: Co-packaged diode's soft recovery eliminates 30–50 V voltage spikes during diode turn-off, reducing snubber capacitor stress by 35%.

Industrial Ultrasonic Cleaners

RF Plasma Generators

Use Scenario: 40–120 kHz ultrasonic transducer driver with automatic frequency tracking.

IC Role / Device Role / Timing Role: Primary power switch in Class D resonant amplifier; subjected to high dV/dt (>5 kV/μs) during zero-crossing transitions.

Use Value: Tight V_GE(th) distribution ensures consistent turn-on timing across multiple channels, maintaining phase coherence in multi-transducer arrays.

Use Scenario: 13.56 MHz RF matching network power stage using push-pull topology with harmonic filtering.

IC Role / Device Role / Timing Role: Switching element in high-Q resonant tank; must sustain high peak currents while minimizing switching loss at elevated junction temperatures.

Use Value: R_thJC = 0.36 °C/W allows direct mounting to liquid-cooled cold plates, enabling 200 W/cm² power density without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar soft-switching IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N135A	Higher I_C rating (50 A), but V_CE(sat) = 2.4 V at 25 A and no co-packaged diode; requires external ultra-fast diode.	Better suited for hard-switched PFC stages; less optimal for resonant topologies due to higher conduction loss and lack of matched diode.	Select when higher peak current headroom is needed and external diode integration is acceptable.
Infineon IKW25N135H3	Same 1350 V/25 A rating, but V_CE(sat) = 1.85 V (typ.) and E_off = 2.2 mJ at 175 °C; includes soft-recovery diode but with V_F = 1.35 V.	Slightly higher conduction loss and lower diode efficiency reduce overall system efficiency by ~0.8% in 5 kW induction heaters.	Prefer when Infineon's H3 platform ecosystem (drivers, reference designs) is already deployed in production.

Compared with IXGN50N135A and IKW25N135H3, STGWA25IH135DF2 offers the lowest combined conduction–switching loss product in soft-switched operation, verified by E_off = 1.9 mJ and V_F = 1.10 V at 175 °C-critical for thermally constrained microwave oven and portable induction systems.

Availability

STGWA25IH135DF2 is available at Aetrix Electronics and suitable for induction heating inverters, resonant microwave oven power stages, industrial ultrasonic cleaners, and RF plasma generators requiring stable component supply across extended production lifecycles.

Supply support for STGWA25IH135DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications with emphasis on energy efficiency and reliability.

This device belongs to ST's IH2 series of soft-switching IGBTs, engineered specifically for high-efficiency resonant converters where low tail current, tight parameter spread, and integrated diode performance are decisive for system-level efficiency and EMI compliance.

FAQ

What gate drive voltage is recommended for STGWA25IH135DF2?

ST specifies V_GE = 15 V for nominal operation, with absolute maximum of ±20 V. A 15 V gate drive ensures full enhancement while maintaining safe margin against Miller-induced turn-on. Gate resistor must be selected to limit peak current to ≤2 A during switching transitions, based on Q_g = 166 nC and desired dV/dt control.

Can STGWA25IH135DF2 be paralleled for higher current capacity?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat), ±0.2 V V_GE(th)) enable stable current sharing. Layout must ensure matched gate loop inductance and symmetrical emitter connections; no external emitter resistors are required for up to four devices in parallel.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous collector current I_C = 25 A at T_C = 100 °C. Exceeding this case temperature requires linear derating per Figure 2; at T_C = 110 °C, maximum I_C drops to 20 A. Thermal design must maintain T_C ≤ 100 °C under worst-case ambient and airflow conditions.

Does the co-packaged diode support reverse recovery in hard-switched configurations?

No-the diode is optimized for soft recovery in resonant circuits, not hard commutation. Its reverse recovery time (t_rr) is not characterized for hard-switched operation, and using it in non-resonant topologies risks excessive voltage overshoot and failure. It must only be used in ZVS or ZCS conditions as specified in the application notes.

STGWA25IH135DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: IH2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1350 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 100 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 20A

Power - Max:: 340 W

Switching Energy:: 1mJ (off)

Input Type:: Standard

Gate Charge:: 166 nC

Td (on/off) @ 25°C:: -

Test Condition:: 600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA25IH135DF2 FAQ

1.How can I place an order for STGWA25IH135DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA25IH135DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA25IH135DF2 reliable?

The price and inventory of STGWA25IH135DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA25IH135DF2 is usually 5 days.

3.What payment methods are accepted for STGWA25IH135DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA25IH135DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA25IH135DF2?

STGWA25IH135DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA25IH135DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA25IH135DF2?

For technical support, including STGWA25IH135DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA25IH135DF2 requirements.

6.How does Aetrix verify that STGWA25IH135DF2 is sourced from the original manufacturer or authorized distributors?

All STGWA25IH135DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA25IH135DF2 meets industry standards.

7.What is the process for return or replacement of STGWA25IH135DF2?

All STGWA25IH135DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA25IH135DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA25IH135DF2 part is unused and in its original packaging.

Return procedure for STGWA25IH135DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…