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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA25M120DF3

Name: STGWA25M120DF3
Brand: STMicroelectronics
SKU: STGWA25M120DF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA25M120DF3

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA25M120DF3.pdf

Description:: IGBT TRENCH FS 1200V 50A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA25M120DF3 from STMicroelectronics is a trench-gate field-stop IGBT with integrated soft- and fast-recovery antiparallel diode, rated for 1200 V V_CES, 25 A continuous collector current at T_C = 100 °C, and 10 µs short-circuit withstand time. It delivers low V_CE(sat) = 1.85 V (typ.) at I_C = 25 A and features positive temperature coefficient for safe paralleling-used in industrial motor drives and UPS inverters.

For engineers reviewing the STGWA25M120DF3 datasheet, STGWA25M120DF3 pinout, STGWA25M120DF3 application, or STGWA25M120DF3 equivalent, key selection criteria include short-circuit robustness, thermal resistance (R_thJC = 0.4 °C/W), diode reverse recovery performance (Q_rr = 1.2 µC @ T_J = 25 °C), gate charge (Q_g = 85 nC), and TO-247 package mounting compatibility.

Technical Context

This IGBT employs a proprietary trench gate + field-stop structure optimized for high-voltage, medium-power inverter stages. Its design balances low conduction loss (V_CE(sat) ≤ 2.2 V up to T_J = 175 °C) and controlled switching energy (E_on = 0.85 mJ, E_off = 1.3 mJ @ T_J = 25 °C).

The co-packaged diode exhibits soft recovery (trr = 265 ns, Q_rr = 1.2 µC) and low reverse recovery energy (Err = 0.22 mJ), minimizing voltage overshoot and EMI in hard-switched topologies. The positive V_CE(sat) temperature coefficient enables stable current sharing in parallel configurations without external ballasting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - supports DC bus voltages up to 900 V in 3-level NPC or 2-level inverters with 20% margin.
I_C (T_C = 100 °C)	25 A - defines usable continuous output current under typical heatsink conditions in industrial drives.
V_CE(sat) (I_C = 25 A, T_J = 25 °C)	1.85 V (typ.) - directly determines conduction loss (P_cond ≈ 46 W) and junction temperature rise.
t_sc	10 µs - enables reliable overcurrent protection using gate drive desaturation detection without external current sensors.
R_thJC (IGBT)	0.4 °C/W - allows direct thermal interface to heatsink; enables <10 K/W system thermal resistance for 100 W dissipation.
Q_g	85 nC - sets minimum gate driver peak current requirement (~5.7 A @ 15 Ω, 15 V) for 100 ns switching transitions.
trr / Q_rr	265 ns / 1.2 µC (@ T_J = 25 °C) - defines snubber sizing and impacts turn-on loss of complementary switch in bridge legs.

Pinout & Package

Delivered in TO-247 package with isolated tab (collector-connected case). Three-terminal configuration: Gate (G), Collector (C), Emitter (E). Tab serves as primary collector terminal and thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives ±20 V gate drive; requires 85 nC total charge for full enhancement; sensitive to dV/dt-induced false turn-on.
C (Tab)	Collector power terminal	Main high-side current path; electrically and thermally connected to metal tab; must be insulated from heatsink unless referenced to system ground.
E	Emitter power return	Serves as reference for gate drive and current sensing; carries full load current and diode forward current; low-inductance layout critical for switching stability.

Key Features

Feature	Design Value
Trench gate + field-stop structure	Enables 1200 V blocking with reduced drift region thickness, lowering R_on × A and improving switching speed vs planar IGBTs.
Integrated soft-recovery diode	Q_rr = 1.2 µC and trr = 265 ns minimize commutation losses and reduce snubber stress in bridge configurations.
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing when multiple devices operate in parallel-no external emitter resistors required.
10 µs short-circuit withstand capability	Allows use with standard gate drivers featuring desaturation protection, eliminating need for fast current-sensing hardware.
Tight parameter distribution	Reduces binning requirements and simplifies thermal derating across production lots in multi-unit systems.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 15–30 kVA variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 2-level topology; handles 600–800 V DC link with 4–16 kHz PWM.

Use Value: Low V_CE(sat) reduces conduction loss by ~15% vs legacy 1200 V IGBTs, enabling smaller heatsinks and higher power density.

Use Scenario: Inverter output stage in online double-conversion UPS delivering clean 230 VAC sine wave during grid failure.

IC Role / Device Role / Timing Role: Bridge-leg switch managing bidirectional energy flow between battery bank and AC output; operates at 8–12 kHz.

Use Value: 10 µs short-circuit rating supports fast fault response without compromising reliability during battery surge events.

Solar Photovoltaic Inverters

Industrial Welding Equipment

Use Scenario: DC–AC conversion stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in H-bridge or NPC topology; subjected to high dv/dt and repetitive partial discharge stress.

Use Value: Soft-recovery diode limits voltage overshoot during freewheeling, reducing snubber losses and improving EMI compliance.

Use Scenario: Primary inverter in IGBT-based inverter welders delivering 200–500 A DC output with rapid current ramp control.

IC Role / Device Role / Timing Role: High-current switching element in resonant or hard-switched inverter operating at 10–20 kHz with duty-cycle modulation.

Use Value: Tight V_CE(sat) distribution ensures consistent arc initiation and stable droop characteristics across multi-device modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3	Higher I_C rating (50 A), larger die, higher Q_g (120 nC), no co-packaged diode.	Requires external ultrafast diode; better suited for higher-current, lower-frequency (<5 kHz) applications.	Select when system needs >30 A continuous current and can accommodate larger gate drive and separate diode layout.
Infineon IKW25N120H3	Similar V_CES/I_C, lower Q_g (65 nC), faster t_sc (6 µs), tighter trr distribution.	Better for high-frequency switching (>20 kHz); less tolerant of prolonged short-circuit stress.	Prefer where switching loss dominates over conduction loss and protection timing is tightly controlled via FPGA logic.

Compared with IXGN50N120B3 and IKW25N120H3, STGWA25M120DF3 offers optimal trade-off for 10–15 kHz industrial inverters requiring integrated diode functionality, proven 10 µs short-circuit immunity, and stable paralleling behavior without added components.

Availability

STGWA25M120DF3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar photovoltaic inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGWA25M120DF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's M-series IGBT portfolio-engineered specifically for medium-power, high-voltage inverter applications where low-loss operation, short-circuit ruggedness, and safe paralleling are mandatory design requirements.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 15 Ω for characterization (td(on) = 28 ns, E_on = 0.85 mJ). For thermal and EMI optimization, R_G between 10 Ω and 22 Ω is recommended. Values above 30 Ω increase switching losses significantly and may compromise short-circuit protection timing.

Can STGWA25M120DF3 be used in parallel configurations without emitter resistors?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable current sharing. Parallel operation requires matched gate drive loop inductance, symmetrical PCB layout, and common heatsink mounting. Derate total current by 15% for two devices and 25% for three or more.

Is the TO-247 tab electrically isolated or collector-connected?

The TO-247 tab is collector-connected (C), not isolated. It serves as the main collector terminal and thermal path. Electrical isolation from the heatsink is mandatory unless the collector is referenced to system ground. Use insulating thermal pads or ceramic washers with ≥2.5 kV dielectric strength.

How does diode reverse recovery performance change at elevated junction temperature?

At T_J = 175 °C, trr increases to 585 ns and Q_rr rises to 5 µC-more than 4× the room-temperature values. This increases turn-on loss in complementary switches and requires recalculating snubber energy ratings and gate driver current capability for worst-case thermal conditions.

STGWA25M120DF3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 100 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 25A

Power - Max:: 375 W

Switching Energy:: 850µJ (on), 1.3mJ (off)

Input Type:: Standard

Gate Charge:: 85 nC

Td (on/off) @ 25°C:: 28ns/150ns

Test Condition:: 600V, 25A, 15Ohm, 15V

Reverse Recovery Time (trr):: 265 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA25M120DF3 FAQ

1.How can I place an order for STGWA25M120DF3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA25M120DF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA25M120DF3 reliable?

The price and inventory of STGWA25M120DF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA25M120DF3 is usually 5 days.

3.What payment methods are accepted for STGWA25M120DF3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA25M120DF3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA25M120DF3?

STGWA25M120DF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA25M120DF3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA25M120DF3?

For technical support, including STGWA25M120DF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA25M120DF3 requirements.

6.How does Aetrix verify that STGWA25M120DF3 is sourced from the original manufacturer or authorized distributors?

All STGWA25M120DF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA25M120DF3 meets industry standards.

7.What is the process for return or replacement of STGWA25M120DF3?

All STGWA25M120DF3 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA25M120DF3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA25M120DF3 part is unused and in its original packaging.

Return procedure for STGWA25M120DF3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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