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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA30H60DFB

Name: STGWA30H60DFB
Brand: STMicroelectronics
SKU: STGWA30H60DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA30H60DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA30H60DFB.pdf

Description:: IGBT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA30H60DFB from STMicroelectronics is a 600 V, 30 A trench-gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-247 long leads package. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 30 A and T_J = 25 °C, t_r = 14.6 ns, t_f = 23 ns, and reverse recovery time t_rr = 53 ns - optimized for photovoltaic inverters and high-frequency converters requiring low conduction loss and minimized tail current.

For engineers reviewing the STGWA30H60DFB datasheet, STGWA30H60DFB pinout, STGWA30H60DFB application, or STGWA30H60DFB equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, R_thJC = 0.58 °C/W (IGBT), and tight parameter distribution enabling stable operation at T_J up to 175 °C in high-power switching topologies.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses, targeting efficiency-critical frequency converters. Its HB series design emphasizes minimized tail current and very fast soft recovery of the co-packaged diode - critical for reducing E_off and reverse recovery energy (E_rr = 104 µJ at T_J = 25 °C).

The device features a slightly positive V_CE(sat) temperature coefficient and tight parameter spread across production lots, enabling robust parallel operation without external current-sharing resistors. Thermal resistance is optimized via direct copper bonding and low-R_thJC packaging, supporting continuous I_C = 30 A at T_C = 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - maximum blocking voltage under open-gate condition, suitable for 400–500 V DC-link systems with margin.
I_C (T_C = 100 °C)	30 A - rated continuous collector current at case temperature 100 °C, defining thermal derating envelope.
V_CE(sat) (I_C = 30 A, T_J = 25 °C)	1.55 V (typ.) - low saturation voltage directly reduces conduction loss and junction heating in hard-switched applications.
t_f (inductive load)	23 ns - fast current fall time enables high-frequency PWM operation up to 30 kHz with low E_off (293 µJ).
t_rr (I_F = 30 A, dI/dt = 1000 A/µs)	53 ns - ultra-fast soft recovery minimizes voltage overshoot and diode switching loss during commutation.
R_thJC (IGBT)	0.58 °C/W - low thermal resistance enables efficient heat transfer to heatsink, supporting high power density designs.
Q_g	149 nC - total gate charge determines driver strength requirement and influences switching speed vs. EMI trade-off.

Pinout & Package

STGWA30H60DFB uses the TO-247 long leads package (mechanical outline per Figure 32, DS10467 Rev 4), featuring three terminals: Collector (Tab), Gate, and Emitter - with the metal tab electrically connected to the collector. This configuration supports direct mounting to heatsinks with electrical isolation required.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Collector)	Main high-current output path and thermal interface	Electrically tied to collector; requires insulated mounting hardware to avoid shorting to heatsink ground.
Lead 1 (Gate)	Control input for IGBT turn-on/turn-off	Low-impedance gate terminal; sensitive to ESD and ringing - requires localized RC snubber and proper PCB layout.
Lead 2 (Emitter)	Reference node for gate drive and current sensing	Serves as common return path for both IGBT and diode; must be routed with minimal inductance for stable switching.

Key Features

Feature	Design Value
Maximum junction temperature	T_J = 175 °C - enables operation in high-ambient environments and extends lifetime under thermal cycling stress.
Positive V_CE(sat) tempco	Enables inherent current balancing in parallel configurations without external ballasting resistors.
Tight parameter distribution	Ensures consistent dynamic behavior across units - critical for multi-phase inverter leg matching.
Minimized tail current	Reduces turn-off energy (E_off) and improves efficiency in hard-switched topologies above 10 kHz.
Very fast soft recovery diode	t_rr = 53 ns with softness factor >1.5 - suppresses voltage spikes and EMI during freewheeling commutation.

Applications

Photovoltaic Inverters

High-Frequency UPS

Use Scenario: DC-to-AC conversion in string inverters with 600–1000 V DC input and 50/60 Hz grid-synchronized output.

IC Role / Device Role / Timing Role: Main switching device in 3-phase IGBT bridge, operating at 16–20 kHz PWM with sinusoidal modulation.

Use Value: Low V_CE(sat) and fast t_f reduce conduction + switching losses, improving peak efficiency to >98.5% at 50% load.

Use Scenario: Online double-conversion UPS delivering clean sine-wave AC output during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow and battery charging cycles.

Use Value: Tight parameter spread ensures balanced phase currents across parallel modules, maintaining THD <3% under nonlinear loads.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Variable-frequency drives controlling 3–30 kW AC induction motors in HVAC and pump applications.

IC Role / Device Role / Timing Role: Half-bridge switch in 2-level inverter topology, modulated at 4–12 kHz with SVPWM.

Use Value: Positive V_CE(sat) tempco and low R_thJC allow reliable parallel operation at full load without thermal runaway.

Use Scenario: Resonant half-bridge inverter generating 20–100 kHz RF power for metal heating in manufacturing.

IC Role / Device Role / Timing Role: High-speed switching element in zero-voltage switching (ZVS) topology with soft-commutated turn-on.

Use Value: Ultra-fast soft diode (t_rr = 53 ns) enables reliable ZVS over full load range, minimizing dead-time losses and device stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H60DFB	Same die, TO-247 standard leadform (shorter leads); R_thJC identical but mechanical mounting differs.	Better suited for compact PCB layouts where lead length affects routing inverter leg symmetry.	Select when board space is constrained and heatsink interface allows standard TO-247 mounting.
STGWT30H60DFB	Same die, TO-3P package; higher R_thJC (0.65 °C/W) and larger footprint; no isolated tab option.	Preferred in legacy industrial systems requiring TO-3P compatibility and higher creepage/clearance.	Choose only if mechanical redesign is impractical and thermal margin ≥15 °C remains at full load.

Compared with STGWA30H60DFB, STGW30H60DFB offers identical electrical performance with shorter leads for tighter gate loop control, while STGWT30H60DFB trades thermal efficiency for legacy package compliance - making the "A" variant optimal for new high-density, high-efficiency converter designs.

Availability

STGWA30H60DFB is available at Aetrix Electronics and suitable for photovoltaic inverters, high-frequency UPS systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STGWA30H60DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STGWA30H60DFB belongs to ST's HB-series high-speed IGBT portfolio, engineered specifically for frequency converters demanding optimal trade-offs between conduction loss, switching speed, and ruggedness in renewable energy and industrial power systems.

FAQ

What is the maximum recommended gate resistor value for STGWA30H60DFB in a 20 kHz solar inverter?

For 20 kHz operation with acceptable E_on/E_off balance and EMI control, ST recommends R_G = 10 Ω (as validated in datasheet Figure 20). Increasing beyond 15 Ω raises t_d(off) and E_off significantly - e.g., at R_G = 20 Ω, E_off rises by ~45% per Figure 16 - risking thermal overload at full load.

Does STGWA30H60DFB support parallel operation without external emitter resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat), ±8% Q_g) enable stable current sharing across parallel units. ST confirms this in Application Note AN4722, provided gate drive loops are symmetrical and thermal coupling is uniform.

How does the integrated diode's reverse recovery performance compare at 175 °C versus 25 °C?

At T_J = 175 °C, t_rr increases to 104 ns (+96%), Q_rr rises to 1352 nC (+253%), and E_rr reaches 407 µJ (+290%) - all confirmed in Table 6. Designers must account for this degradation in thermal design and snubber sizing for high-temperature operation.

Is the metal tab electrically isolated in STGWA30H60DFB?

No - the metal tab is internally connected to the collector terminal. Electrical isolation from the heatsink is mandatory using insulating pads or ceramic washers. Failure to isolate risks short-circuiting the DC bus to chassis ground, as specified in Section 4.2 of DS10467 Rev 4.

STGWA30H60DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 383µJ (on), 293µJ (off)

Input Type:: Standard

Gate Charge:: 149 nC

Td (on/off) @ 25°C:: 37ns/146ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 53 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA30H60DFB FAQ

1.How can I place an order for STGWA30H60DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA30H60DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA30H60DFB reliable?

The price and inventory of STGWA30H60DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA30H60DFB is usually 5 days.

3.What payment methods are accepted for STGWA30H60DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA30H60DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA30H60DFB?

STGWA30H60DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA30H60DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA30H60DFB?

For technical support, including STGWA30H60DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA30H60DFB requirements.

6.How does Aetrix verify that STGWA30H60DFB is sourced from the original manufacturer or authorized distributors?

All STGWA30H60DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA30H60DFB meets industry standards.

7.What is the process for return or replacement of STGWA30H60DFB?

All STGWA30H60DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGWA30H60DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA30H60DFB part is unused and in its original packaging.

Return procedure for STGWA30H60DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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