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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA30H65DFB2

Name: STGWA30H65DFB2
Brand: STMicroelectronics
SKU: STGWA30H65DFB2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA30H65DFB2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA30H65DFB2.pdf

Description:: DISCRETE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA30H65DFB2 from STMicroelectronics is a 650 V, 30 A high-speed trench gate field-stop IGBT with co-packaged soft-recovery diode in TO-247 long leads package. It delivers low V_CE(sat) = 1.65 V (typ. @ I_C = 30 A, T_J = 25 °C), fast switching (t_d(off) = 71 ns, E_off = 310 µJ), and minimized tail current for high-efficiency PFC and inverter stages in solar and UPS systems.

For engineers reviewing the STGWA30H65DFB2 datasheet, STGWA30H65DFB2 pinout, STGWA30H65DFB2 application, or STGWA30H65DFB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, diode reverse recovery charge (Q_rr = 600 nC @ T_J = 25 °C), thermal resistance (R_thJC = 0.9 °C/W), and gate charge (Q_g = 90 nC) for optimized gate drive design.

Technical Context

This IGBT employs ST's HB2 series trench gate field-stop structure optimized for conduction loss reduction at low-to-moderate currents and lower switching energy versus prior generations. Its positive V_CE(sat) temperature coefficient enables stable parallel operation, while the integrated diode features soft recovery (trr = 115 ns) and low dI_rr/dt (700 A/µs) to suppress voltage overshoot.

The device targets hard-switched topologies operating up to 20 kHz with junction temperatures up to 175 °C. Its R_thJC of 0.9 °C/W (IGBT) and 1.47 °C/W (diode) supports high-power density designs in constrained thermal environments such as DC fast charging stations and central solar inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under gate-open condition; suitable for 400 V AC input PFC and 600 V DC bus applications.
I_C (T_C = 100 °C)	30 A - Continuous collector current rating at case temperature 100 °C; defines usable current in thermally limited enclosures.
V_CE(sat)	1.65 V (typ., 30 A, 25 °C) - Low saturation voltage reduces conduction loss; increases by +0.35 V from 25 °C to 175 °C (positive tempco).
E_off	310 µJ (typ., 400 V, 30 A, 25 °C) - Turn-off energy determines switching loss at given frequency; rises to 643 µJ at 175 °C.
Q_rr	600 nC (typ., 30 A, 25 °C) - Diode reverse recovery charge directly impacts turn-on loss of opposing switch; doubles at 175 °C.
R_thJC (IGBT)	0.9 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting; supports >160 W dissipation at ΔT = 144 °C.
t_rr	115 ns (typ., 30 A, 25 °C) - Reverse recovery time governs minimum dead-time requirement; extends to 221 ns at 175 °C.

Pinout & Package

TO-247 long leads package with isolated tab (collector-connected). Standard three-terminal configuration: Gate (G), Collector (C), Emitter (E). Tab serves as collector terminal and primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives 15 V gate drive; ±20 V absolute max rating; Q_g = 90 nC requires robust gate driver capable of ≥2 A peak sourcing/sinking.
C (Tab / Pin 2)	Collector (high-side power node)	Electrically and thermally connected to metal tab; must be electrically isolated from heatsink unless system topology permits common-collector reference.
E (Pin 3)	Emitter (low-side return path)	Serves as power ground reference for gate drive and current sensing; layout must minimize stray inductance to avoid voltage spikes during switching.

Key Features

Feature	Design Value
Low V_CE(sat) with positive tempco	1.65 V @ 30 A, 25 °C; increases predictably with temperature-enables reliable paralleling without current-sharing resistors.
Co-packaged soft-recovery diode	trr = 115 ns, Q_rr = 600 nC, dI_rr/dt = 700 A/µs-reduces voltage overshoot and EMI in bridge-leg commutation.
Minimized tail current	Reduces E_off contribution from minority carrier recombination; critical for high-frequency PFC where turn-off loss dominates.
Tight parameter distribution	V_GE(th) = 5–7 V, V_CE(sat) = 1.65–2.1 V-ensures consistent gate drive timing and thermal sharing across production lots.
High junction temperature rating	T_J = –55 to +175 °C-supports operation in sealed, high-ambient environments like EV charging cabinets and outdoor solar inverters.

Applications

Single-Phase PFC Converters

Solar String Inverters

Use Scenario: Boost PFC stage in industrial AC-DC power supplies with 230 V AC input and 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter; switches at 50–100 kHz.

Use Value: Low V_CE(sat) and minimized tail current reduce conduction and turn-off losses, enabling >98.5% efficiency at full load.

Use Scenario: DC-AC H-bridge inverter for residential photovoltaic systems (3–10 kW).

IC Role / Device Role / Timing Role: Main power switch in unipolar PWM topology; handles bidirectional current with integrated diode freewheeling.

Use Value: Soft-recovery diode eliminates need for external snubbers; tight V_CE(sat) distribution ensures balanced thermal loading across phase legs.

Uninterruptible Power Supplies

DC Fast Charging Stations

Use Scenario: Online double-conversion UPS with 600 V DC link and 50/60 Hz output.

IC Role / Device Role / Timing Role: Inverter-stage switch in three-phase IGBT bridge; operates with low switching frequency (2–16 kHz) but high current stress.

Use Value: R_thJC = 0.9 °C/W and 175 °C T_J rating allow sustained 30 A output without derating in compact chassis cooling.

Use Scenario: Secondary-side DC-DC isolation stage in 150–350 kW EV chargers converting 800 V DC to 400 V battery level.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to high dv/dt and repetitive surge currents.

Use Value: Very fast diode recovery (trr = 115 ns) and low Q_rr prevent cross-conduction losses during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	600 V, 30 A; higher V_CE(sat) = 1.8 V (typ.), slower diode (trr = 250 ns), higher E_off = 420 µJ.	Less suitable for >50 kHz PFC; requires larger heatsink due to higher conduction + switching loss.	Prefer when cost sensitivity outweighs efficiency targets and thermal constraints are relaxed.
Infineon IKW30N60H3	600 V, 30 A; lower Q_g = 65 nC, faster t_d(off) = 55 ns, but diode Q_rr = 850 nC and no soft recovery.	Better for ZVS topologies; higher diode loss in hard-switched bridges increases system EMI filtering burden.	Choose for resonant converters where gate drive simplicity and turn-off speed are prioritized over diode-related losses.

Compared with IXGN30N60B3 and IKW30N60H3, STGWA30H65DFB2 offers superior trade-off between conduction loss (lowest V_CE(sat)), diode softness (lowest Q_rr and dI_rr/dt), and thermal capability (175 °C T_J), making it optimal for high-efficiency, high-reliability hard-switched industrial inverters.

Availability

STGWA30H65DFB2 is available at Aetrix Electronics and suitable for welding equipment, solar string inverters, and uninterruptable power supplies requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for STGWA30H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGWA30H65DFB2 belongs to the HB2-series high-speed IGBT product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, EV infrastructure, and industrial motor drives.

FAQ

What gate resistor value is recommended for STGWA30H65DFB2 in a 400 V, 30 A PFC application?

A 6.8 Ω gate resistor is validated per datasheet test conditions (V_CC = 400 V, I_C = 30 A) and balances switching speed (t_d(off) = 71 ns) against gate oscillation and voltage overshoot. Lower values (≤4.7 Ω) increase E_on/E_off margin but risk ringing; higher values (>10 Ω) raise losses and require active Miller clamping.

Can STGWA30H65DFB2 replace older STGW30H65FB in existing designs?

Yes-STGWA30H65DFB2 is a direct drop-in replacement for STGW30H65FB with identical TO-247 long leads pinout, voltage/current ratings, and thermal footprint. It improves V_CE(sat) by ~0.15 V and reduces E_off by ~15%, enabling immediate efficiency uplift without layout changes.

Is the integrated diode rated for continuous freewheeling in bridge configurations?

Yes-the co-packaged diode is rated for 41 A continuous forward current at T_C = 25 °C and 24 A at T_C = 100 °C, matching typical IGBT conduction duty cycles in inverter half-bridges. Its soft recovery and low Q_rr ensure reliable operation without external anti-parallel diodes.

Does STGWA30H65DFB2 support paralleling for higher current capacity?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution (±0.25 V V_CE(sat)) enable stable current sharing across multiple devices. Layout must ensure matched gate loop inductance and symmetrical thermal mounting to avoid imbalance.

STGWA30H65DFB2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 167 W

Switching Energy:: 270µJ (on), 310µJ (off)

Input Type:: Standard

Gate Charge:: 90 nC

Td (on/off) @ 25°C:: 18.4ns/71ns

Test Condition:: 400V, 30A, 6.8Ohm, 15V

Reverse Recovery Time (trr):: 115 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA30H65DFB2 FAQ

1.How can I place an order for STGWA30H65DFB2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA30H65DFB2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA30H65DFB2 reliable?

The price and inventory of STGWA30H65DFB2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA30H65DFB2 is usually 5 days.

3.What payment methods are accepted for STGWA30H65DFB2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA30H65DFB2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA30H65DFB2?

STGWA30H65DFB2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA30H65DFB2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA30H65DFB2?

For technical support, including STGWA30H65DFB2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA30H65DFB2 requirements.

6.How does Aetrix verify that STGWA30H65DFB2 is sourced from the original manufacturer or authorized distributors?

All STGWA30H65DFB2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA30H65DFB2 meets industry standards.

7.What is the process for return or replacement of STGWA30H65DFB2?

All STGWA30H65DFB2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA30H65DFB2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA30H65DFB2 part is unused and in its original packaging.

Return procedure for STGWA30H65DFB2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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