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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA30HP65FB2

Name: STGWA30HP65FB2
Brand: STMicroelectronics
SKU: STGWA30HP65FB2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA30HP65FB2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA30HP65FB2.pdf

Description:: TRENCH GATE FIELD-STOP 650 V, 30

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA30HP65FB2 from STMicroelectronics is a 650 V, 30 A high-speed trench gate field-stop IGBT with co-packaged antiparallel diode in TO-247 long leads package, featuring 1.65 V typical V_CE(sat) at 30 A/15 V_GE, 175 °C max junction temperature, and 0.9 °C/W IGBT thermal resistance - optimized for welding and power factor correction circuits requiring fast switching and low conduction loss.

For engineers reviewing the STGWA30HP65FB2 datasheet, STGWA30HP65FB2 pinout, STGWA30HP65FB2 application, or STGWA30HP65FB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, E_off at 175 °C, reverse recovery charge (Q_rr) of the integrated diode, R_thJC values for both IGBT and diode, and gate charge profile under 520 V/30 A conditions.

Technical Context

This IGBT employs ST's proprietary HB2 series trench gate field-stop structure to simultaneously reduce conduction losses (via improved V_CE(sat) behavior at low currents) and switching energy (E_off = 310 µJ typ. at 25 °C, 643 µJ at 175 °C). The co-packaged diode exhibits trr = 140 ns and Q_rr = 21 nC at 25 °C, rising to 200 ns and 47.3 nC at 175 °C.

Its positive V_CE(sat) temperature coefficient ensures current sharing in parallel configurations, while tight parameter distribution and minimized tail current support stable operation in hard-switched inductive loads. Gate drive requirements are defined by Q_g = 90 nC, Q_ge = 15.3 nC, and Q_gc = 41.5 nC at V_GE = 0–15 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - withstands DC bus voltages up to 650 V without breakdown
I_C (T_C = 100 °C)	30 A - continuous collector current rating at 100 °C case temperature
V_CE(sat) (T_J = 25 °C)	1.65 V typ. - low conduction loss enabling high-efficiency power stages
E_off (T_J = 175 °C)	643 µJ - quantified turn-off energy under worst-case thermal condition
R_thJC (IGBT)	0.9 °C/W - enables high-power dissipation with minimal junction-to-case temperature rise
Q_rr (T_J = 175 °C)	47.3 nC - reverse recovery charge of integrated diode affecting switching loss and EMI
t_d(off) + t_f	184 ns typ. at 175 °C - total turn-off time defining maximum switching frequency capability

Pinout & Package

STGWA30HP65FB2 uses the TO-247 long leads package (mechanical outline per DS13149 Rev 4 Figure 29), with tab-connected collector (C), emitter (E), and gate (G) terminals arranged in standard three-terminal configuration. Thermal performance is enhanced by direct metal tab mounting and low R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives 15 V logic-level drive; requires 90 nC total charge for full enhancement
C (Tab)	Collector output / high-side switch node	Electrically connected to metal tab; must be isolated from heatsink unless floating topology used
E (Pin 3)	Emitter reference / return path	Serves as common source for IGBT and antiparallel diode; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Co-packaged protection diode	Antiparallel 5 A/10 A pulsed diode with 2.2 V forward voltage at 175 °C enables compact half-bridge layout without external diode
Minimized tail current	Reduces turn-off energy and improves controllability during hard switching in inductive PFC and welding inverters
Tight parameter distribution	Ensures consistent V_CE(sat), E_off, and Q_rr across production lots for reliable BOM planning and parallel device operation
Positive V_CE(sat) tempco	Enables inherent current balancing when multiple devices operate in parallel without external ballasting resistors
Low thermal resistance	R_thJC = 0.9 °C/W (IGBT) and 5 °C/W (diode) supports high-power density designs with reduced heatsink size

Applications

Welding Inverter Primary Switch

Active PFC Boost Stage

Use Scenario: High-frequency DC-link switching in IGBT-based inverter welders operating at 15–50 kHz with 300–600 V DC bus.

IC Role / Device Role / Timing Role: Main switching device in full-bridge or phase-shifted topology handling peak currents >60 A and repetitive hard-switching stress.

Use Value: Low V_CE(sat) and minimized tail current reduce average conduction loss and peak switching loss, directly improving thermal margin and duty-cycle capability.

Use Scenario: Boost switch in industrial-grade active PFC modules for 3 kW+ SMPS, operating continuously at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlling energy transfer into boost inductor under varying line/load conditions.

Use Value: Tight parameter distribution and stable 175 °C operation ensure consistent power stage efficiency and reliability across ambient temperature extremes.

UPS Inverter Output Stage

Motor Drive Half-Bridge Leg

Use Scenario: Output H-bridge switching in online double-conversion UPS systems delivering clean 50/60 Hz sine wave to critical loads.

IC Role / Device Role / Timing Role: Low-side and high-side switching device in 3-phase inverter leg, subjected to short-circuit and overload fault conditions.

Use Value: 90 A pulsed collector current rating and robust SOA (Figure 7) support safe operation during transient overloads without desaturation protection.

Use Scenario: Medium-power industrial motor drives (7.5–15 kW) using 650 V DC bus and PWM frequencies up to 16 kHz.

IC Role / Device Role / Timing Role: Fast-switching IGBT in half-bridge configuration driving induction or permanent magnet motors with regenerative braking.

Use Value: Integrated diode with low Q_rr and controlled dI_rr/dt reduces voltage overshoot and EMI during freewheeling, easing snubber design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	600 V rating, higher V_CE(sat) (1.8 V typ.), lower E_off (220 µJ), TO-247 package	Optimized for lower-voltage PFC and UPS where 600 V margin suffices	Select when system DC bus ≤540 V and lower switching loss outweighs conduction loss trade-off
Infineon IKW30N60H3	600 V rating, similar V_CE(sat) (1.6 V), higher Q_g (110 nC), same TO-247 footprint	Better suited for soft-switched topologies due to slower turn-off characteristics	Prefer when gate drive strength allows higher Q_g and design prioritizes ruggedness over speed

Compared with IXGN30N60B3 and IKW30N60H3, STGWA30HP65FB2 offers superior 650 V blocking capability, tighter V_CE(sat) distribution, and lower R_thJC, making it optimal for high-reliability welding and industrial PFC where voltage margin and thermal performance are critical.

Availability

STGWA30HP65FB2 is available at Aetrix Electronics and suitable for welding inverters, active power factor correction modules, and UPS output stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGWA30HP65FB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's HB2 series of high-speed trench gate field-stop IGBTs, engineered specifically for high-efficiency, high-reliability switching in demanding industrial power conversion applications such as welding, PFC, and motor drives.

FAQ

What is the maximum recommended gate-emitter voltage for STGWA30HP65FB2?

The absolute maximum V_GE is ±20 V for continuous operation, with transient tolerance up to ±30 V for pulses ≤10 µs. For reliable long-term operation, ST recommends limiting V_GE to +15 V during turn-on and –5 V to –10 V during turn-off to ensure robust noise immunity and minimize Miller-induced false triggering.

Does STGWA30HP65FB2 require an external freewheeling diode?

No - STGWA30HP65FB2 integrates a co-packaged antiparallel diode rated for 5 A continuous and 10 A pulsed forward current. This diode is specifically designed for protection and freewheeling in inductive switching applications, eliminating the need for an external diode in most half-bridge and single-switch topologies.

How does junction temperature affect V_CE(sat) in this IGBT?

V_CE(sat) increases with junction temperature: from 1.65 V at 25 °C to 1.85 V at 125 °C and 2.0 V at 175 °C (all measured at I_C = 30 A, V_GE = 15 V). This positive temperature coefficient supports stable current sharing in parallel configurations and predictable thermal runaway avoidance.

Can STGWA30HP65FB2 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient, tight parameter distribution, and minimized tail current make it suitable for paralleling. ST recommends matched gate drive impedance (≤6.8 Ω), symmetrical PCB layout, and individual gate resistors to ensure balanced dynamic current sharing and avoid oscillation during switching transitions.

STGWA30HP65FB2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 167 W

Switching Energy:: -

Input Type:: Standard

Gate Charge:: 90 nC

Td (on/off) @ 25°C:: -/71ns

Test Condition:: 400V, 30A, 6.8Ohm, 15V

Reverse Recovery Time (trr):: 140 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA30HP65FB2 FAQ

1.How can I place an order for STGWA30HP65FB2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA30HP65FB2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA30HP65FB2 reliable?

The price and inventory of STGWA30HP65FB2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA30HP65FB2 is usually 5 days.

3.What payment methods are accepted for STGWA30HP65FB2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA30HP65FB2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA30HP65FB2?

STGWA30HP65FB2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA30HP65FB2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA30HP65FB2?

For technical support, including STGWA30HP65FB2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA30HP65FB2 requirements.

6.How does Aetrix verify that STGWA30HP65FB2 is sourced from the original manufacturer or authorized distributors?

All STGWA30HP65FB2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA30HP65FB2 meets industry standards.

7.What is the process for return or replacement of STGWA30HP65FB2?

All STGWA30HP65FB2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA30HP65FB2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA30HP65FB2 part is unused and in its original packaging.

Return procedure for STGWA30HP65FB2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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