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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA30IH65DF

Name: STGWA30IH65DF
Brand: STMicroelectronics
SKU: STGWA30IH65DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA30IH65DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA30IH65DF.pdf

Description:: TRENCH GATE FIELD-STOP 650 V, 30

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA30IH65DF from STMicroelectronics is a 650 V, 30 A trench gate field-stop IGBT with co-packaged freewheeling diode in TO-247 long leads package, optimized for soft commutation in resonant topologies. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 30 A, T_J = 25 °C; R_thJC = 0.83 °C/W (IGBT); and features minimized tail current for reduced turn-off energy in induction cooking inverters.

For engineers reviewing the STGWA30IH65DF datasheet, STGWA30IH65DF pinout, STGWA30IH65DF application, or STGWA30IH65DF equivalent, key selection criteria include soft-switching E_off performance (123 µJ typ. at 320 V), positive V_CE(sat) temperature coefficient for current sharing, and integrated low-V_F diode (1.65 V typ. at I_F = 15 A).

Technical Context

This IGBT employs a proprietary trench gate field-stop structure balancing conduction and switching losses specifically for zero-voltage or zero-current switching conditions. Its design emphasizes low C_ies (1490 pF) and tight parameter distribution to ensure consistent timing in high-frequency resonant converters.

The integrated freewheeling diode exhibits low forward voltage (V_F = 1.40 V max at I_F = 15 A, T_J = 175 °C) and reverse recovery characteristics suited for soft-recovery operation. Thermal resistance junction-to-case is separately specified for IGBT (0.83 °C/W) and diode (2.08 °C/W), enabling independent thermal modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under gate-open condition; supports 400 V DC bus with margin for ringing in resonant applications.
I_C (T_C = 100 °C)	30 A - Continuous collector current rating at 100 °C case temperature; defines usable output power in thermally constrained designs.
V_CE(sat)	1.55 V (typ.) @ I_C = 30 A, T_J = 25 °C - Low saturation voltage reduces conduction loss and heatsink requirements in high-duty-cycle operation.
E_off	123 µJ (typ.) @ V_CC = 320 V, I_C = 30 A, T_J = 25 °C - Turn-off energy measured with snubber; enables efficient operation up to ~100 kHz in LLC or half-bridge resonant converters.
R_thJC (IGBT)	0.83 °C/W - Junction-to-case thermal resistance; allows calculation of maximum allowable power dissipation (180 W at T_C = 25 °C) and thermal interface design.
V_F (diode)	1.65 V (typ.) @ I_F = 15 A, T_J = 25 °C - Forward voltage of co-packaged diode; directly impacts freewheeling loss and thermal balance in bridge-leg configurations.
Q_g	80 nC - Total gate charge; determines gate driver power requirement and influences switching speed control via external R_G.

Pinout & Package

TO-247 long leads package with isolated tab (collector-connected). Standard three-terminal configuration: Gate (G), Collector (C), Emitter (E). Tab is electrically connected to collector and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control terminal	Receives ±20 V gate drive; requires 80 nC total charge for full enhancement; sensitive to dV/dt-induced false turn-on.
C (Tab / Pin 2)	Collector (high-side switch node)	Connected to TO-247 metal tab; carries full load current and dissipates majority of switching/conduction loss; electrically tied to heatsink.
E (Pin 3)	Emitter (low-side reference)	Serves as common return for IGBT and diode; must be routed with low inductance to minimize voltage spikes during fast switching.

Key Features

Feature	Design Value
Soft commutation optimization	Minimized tail current and controlled dI/dt reduce E_off and EMI in ZVS/ZCS topologies without requiring external snubbers.
Positive V_CE(sat) tempco	Increases with junction temperature - enables inherent current sharing in parallel IGBT configurations without active balancing circuits.
Co-packaged low-V_F diode	V_F = 1.40 V max at 175 °C - Reduces freewheeling loss by >15% vs standard FRD counterparts, improving system efficiency at elevated temperatures.
Tight parameter distribution	V_CE(sat) spread ≤ 0.5 V across production lot - ensures predictable thermal behavior and simplifies derating in multi-unit systems.
High T_J(max)	175 °C operating limit - extends safe operating area in compact induction heating modules where ambient and case temperatures exceed 100 °C.

Applications

Induction Cooking Inverter

Resonant LLC Converter

Use Scenario: High-frequency (20–100 kHz) half-bridge inverter driving series-resonant tank for pan detection and power regulation in domestic cooktops.

IC Role / Device Role / Timing Role: Main switching device in resonant leg; operates in zero-voltage switching mode with precise dead-time control.

Use Value: Low E_off (123 µJ) and soft turn-off enable >93% system efficiency at 3.5 kW while meeting CISPR-11 Class B EMI limits.

Use Scenario: Primary-side switch in isolated 300–500 W LLC resonant DC-DC converter for telecom or server PSUs.

IC Role / Device Role / Timing Role: Hard-commutated at startup, then transitions to ZVS during normal operation; handles peak currents up to 90 A pulsed.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing in dual-phase interleaved designs, reducing per-device thermal stress.

Microwave Oven Inverter

Industrial Induction Heater

Use Scenario: 2.45 GHz magnetron power supply using asymmetrical half-bridge topology with variable frequency control.

IC Role / Device Role / Timing Role: High-side switch subjected to repetitive 500 V transient spikes; co-packaged diode provides freewheeling path during dead time.

Use Value: 650 V V_CES rating with 175 °C T_J capability sustains reliable operation under sustained 120 °C case temperature in sealed oven enclosures.

Use Scenario: 10–50 kW medium-frequency (1–50 kHz) series-resonant heating system for metal forging and annealing.

IC Role / Device Role / Timing Role: Parallel-connected switching element in multi-kW phase-shifted full-bridge; relies on positive V_CE(sat) tempco for passive current balancing.

Use Value: R_thJC = 0.83 °C/W enables direct mounting to liquid-cooled cold plates, supporting continuous 30 A operation at 100 % duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar soft-switching IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	600 V rating, higher Q_g (110 nC), no integrated diode - requires external ultrafast diode.	Limited to lower bus voltages (<450 V); higher gate drive loss increases controller complexity.	Prefer when discrete diode selection is needed for custom recovery tuning or when 600 V margin suffices.
Infineon IKP30N60T	600 V, 30 A, TRENCHSTOP™ 5; lower V_CE(sat) (1.45 V) but higher E_off (165 µJ) and no co-packaged diode.	Higher switching loss in resonant mode; requires separate diode layout and thermal management.	Choose for hard-switched PFC stages where conduction loss dominates, not for ZVS resonant loads.

Compared with IXGN30N60B3 and IKP30N60T, STGWA30IH65DF uniquely integrates a matched low-V_F diode and delivers superior E_off at 650 V, making it the only option qualified for high-efficiency, self-commutated induction heating above 400 V DC bus.

Availability

STGWA30IH65DF is available at Aetrix Electronics and suitable for induction cooking inverters, resonant LLC converters, and microwave oven power supplies requiring stable component supply and long-lifecycle support.

Supply support for STGWA30IH65DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's IH-series soft-switching IGBT portfolio, engineered specifically for high-efficiency resonant power conversion in induction heating and microwave applications where low E_off and integrated diode performance are critical.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off in ZVS operation?

A 22 Ω gate resistor is validated in the datasheet for inductive load switching at 400 V and 30 A, yielding t_d(off) = 200 ns and t_f = 33 ns at 25 °C. Increasing R_G beyond 33 Ω risks incomplete turn-off during short dead times; values below 15 Ω require careful PCB layout to avoid oscillation due to high dI/dt.

Can STGWA30IH65DF be used in hard-switched applications like motor drives?

No - this device is explicitly designed for soft commutation only. Its minimized tail current degrades hard-switching E_off performance, and the datasheet does not specify safe operating area (SOA) for hard-switched conditions. Use ST's H3 or T series IGBTs instead for motor drive applications.

Is the TO-247 tab electrically isolated from the package body?

Yes - the TO-247 long leads package uses an isolated tab construction. The metal tab is internally connected only to the collector terminal (Pin 2), with no electrical connection to the plastic body or other pins. This allows direct heatsink mounting without insulating pads if the heatsink is referenced to collector potential.

How does the diode's V_F change at elevated temperature, and what impact does it have on thermal design?

V_F decreases from 1.65 V (25 °C) to 1.40 V (175 °C) at I_F = 15 A, reducing forward conduction loss by ~15 %. However, diode R_thJC is 2.08 °C/W - significantly higher than the IGBT's 0.83 °C/W - so thermal design must prioritize diode-side heat spreading to avoid localized hot spots in high-duty-cycle freewheeling.

STGWA30IH65DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: IH

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.05V @ 15V, 30A

Power - Max:: 180 W

Switching Energy:: 123µJ (off)

Input Type:: Standard

Gate Charge:: 80 nC

Td (on/off) @ 25°C:: -/200ns

Test Condition:: 400V, 30A, 22Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA30IH65DF FAQ

1.How can I place an order for STGWA30IH65DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA30IH65DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA30IH65DF reliable?

The price and inventory of STGWA30IH65DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA30IH65DF is usually 5 days.

3.What payment methods are accepted for STGWA30IH65DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA30IH65DF transactions.

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4.How is shipping managed for STGWA30IH65DF?

STGWA30IH65DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA30IH65DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA30IH65DF?

For technical support, including STGWA30IH65DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA30IH65DF requirements.

6.How does Aetrix verify that STGWA30IH65DF is sourced from the original manufacturer or authorized distributors?

All STGWA30IH65DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA30IH65DF meets industry standards.

7.What is the process for return or replacement of STGWA30IH65DF?

All STGWA30IH65DF units undergo pre-shipment inspection (PSI). If there is an issue with STGWA30IH65DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA30IH65DF part is unused and in its original packaging.

Return procedure for STGWA30IH65DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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