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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA35IH135DF2

Name: STGWA35IH135DF2
Brand: STMicroelectronics
SKU: STGWA35IH135DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA35IH135DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA35IH135DF2.pdf

Description:: IGBT TRENCH FS 1.35KV 70A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA35IH135DF2 from STMicroelectronics is a 1350 V, 35 A trench gate field-stop IGBT with co-packaged soft-recovery freewheeling diode in TO-247 long leads package, optimized for resonant and soft-switching topologies. It delivers V_CE(sat) = 1.7 V (typ.) at I_C = 30 A, T_J = 25 °C; R_thJC(IGBT) = 0.36 °C/W; and E_off = 1.6 mJ (T_J = 25 °C) in inductive switching - enabling high-efficiency induction heating and microwave oven power stages.

For engineers reviewing the STGWA35IH135DF2 datasheet, STGWA35IH135DF2 pinout, STGWA35IH135DF2 application, or STGWA35IH135DF2 equivalent, key selection criteria include soft-commutation capability, tight V_CE(sat) distribution across temperature, low tail current, co-packaged diode VF matching, and thermal resistance suitability for forced-air-cooled 3–5 kW resonant inverters.

Technical Context

This IGBT employs ST's IH2 series trench gate field-stop structure, balancing conduction loss (via low V_CE(sat) and positive temperature coefficient) and switching loss (via minimized tail current and optimized charge profile). Its dynamic characteristics are characterized under standardized inductive and snubbed capacitive load conditions with defined gate resistance (R_G = 10 Ω) and junction temperatures up to 175 °C.

The integrated diode features low forward voltage (V_F = 1.25 V at I_F = 30 A, T_J = 25 °C), soft recovery (minimized reverse recovery dv/dt stress), and matched thermal coupling to the IGBT die - critical for zero-voltage switching (ZVS) and zero-current switching (ZCS) operation in half-bridge resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1350 V - supports DC bus voltages up to 950 V in hard-switched designs or 1200 V in resonant topologies with voltage margin.
I_C (continuous, T_C = 100 °C)	35 A - defines maximum steady-state output current under typical heatsink conditions in induction heating modules.
V_CE(sat) (T_J = 175 °C)	2.0 V - ensures stable conduction loss increase with temperature, enabling inherent current sharing in parallel configurations.
E_off (T_J = 175 °C)	2.68 mJ - quantifies energy dissipated during turn-off at max operating temperature, directly impacting thermal design of 20–100 kHz resonant inverters.
R_thJC (IGBT)	0.36 °C/W - enables ~125 W power dissipation at ΔT = 45 °C junction-to-case, supporting compact heatsink integration.
Q_g	258 nC - determines gate driver peak current requirement (≥ 2.6 A for 100 ns rise time) and influences switching speed control.
V_F (diode, T_J = 175 °C)	1.3 V - maintains low conduction loss in freewheeling phase while preserving soft recovery behavior at elevated temperature.

Pinout & Package

STGWA35IH135DF2 is housed in a TO-247 long leads package with isolated tab (collector-connected), featuring three terminals: Gate (G), Collector (C), and Emitter (E). The metal tab serves as the collector terminal and must be electrically isolated from heatsink unless system-level grounding permits direct connection.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives PWM signal; requires ≥ ±20 V rating and low-inductance layout to minimize ringing during fast transitions.
C (Tab)	Collector power terminal	Main high-side power path; tab must be mounted to heatsink with electrically isolating thermal pad if floating collector topology is used.
E	Emitter return / reference node	Serves as common source for gate drive return and current sensing; layout must minimize stray inductance to avoid voltage spikes during switching.

Key Features

Feature	Design Value
Soft-commutation optimization	Minimized tail current and controlled dI/dt reduce voltage overshoot and EMI in ZVS/ZCS resonant circuits.
Tight parameter distribution	±5% V_CE(sat) tolerance enables reliable paralleling without external emitter resistors in multi-kW systems.
Positive V_CE(sat) temperature coefficient	Ensures self-balancing current sharing when multiple devices operate in parallel at varying thermal conditions.
Low R_thJC diode (0.97 °C/W)	Enables efficient thermal coupling between IGBT and diode dies, preventing localized hot spots during asymmetric duty-cycle operation.
Co-packaged diode with soft recovery	Eliminates need for external ultrafast diode, reducing BOM count and PCB area while maintaining low reverse recovery charge (Q_rr).

Applications

Induction Heating Cooktops

Microwave Oven Inverters

Use Scenario: 20–50 kHz half-bridge resonant inverter driving series-LC tank for pan detection and power regulation.

IC Role / Device Role / Timing Role: Main switching device in high-side/low-side leg; operates in ZVS mode with precise dead-time control.

Use Value: Low E_off and soft diode recovery enable >93% inverter efficiency at 3.5 kW, reducing heatsink size by 30% vs. prior-generation IGBTs.

Use Scenario: 25–40 kHz full-bridge inverter supplying magnetron with regulated DC-link voltage.

IC Role / Device Role / Timing Role: High-voltage switching element handling 1000 V DC bus; synchronized with phase-shifted PWM for variable power control.

Use Value: 1350 V V_CES rating provides 25% overvoltage margin against reflected transients from magnetron arcing events.

Industrial Resonant Converters

RF Plasma Generators

Use Scenario: 100–300 kHz LLC resonant converter for laser diode drivers or ultrasonic cleaning systems.

IC Role / Device Role / Timing Role: Primary-side switch managing high-frequency AC link; operated with adaptive frequency modulation.

Use Value: Tight V_CE(sat) distribution and low Q_gc/Q_ge ratio support stable gain control and reduced gate drive losses at 200 kHz.

Use Scenario: 2–5 MHz Class-E amplifier stage generating RF power for plasma ignition and sustainment.

IC Role / Device Role / Timing Role: Switching element in high-Q resonant tank; driven with precisely timed pulses to maintain zero-voltage turn-on.

Use Value: Minimized tail current prevents excessive di/dt-induced voltage spikes that could trigger premature plasma extinction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar soft-switching IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN35N135A	Higher V_CE(sat) (2.1 V typ. @ 30 A), higher R_thJC (0.45 °C/W), no co-packaged diode - requires external ultrafast diode.	Requires additional diode footprint and layout complexity; better suited for discrete diode selection flexibility.	Choose when diode reverse recovery parameters must be independently optimized beyond integrated solution limits.
Infineon IKW30N135ES5	Lower I_C rating (30 A @ T_C = 100 °C), lower E_off (1.4 mJ @ 175 °C), same 1350 V rating and TO-247 package.	Better suited for space-constrained 2.5 kW designs where peak efficiency at light load is prioritized over thermal headroom.	Choose when system thermal budget is tighter but maximum continuous power is ≤2.8 kW.

Compared with IXGN35N135A and IKW30N135ES5, STGWA35IH135DF2 offers superior thermal margin (35 A @ 100 °C vs. 30 A), integrated soft diode simplification, and tighter V_CE(sat) distribution - making it optimal for cost-sensitive, high-volume 3–5 kW resonant heating platforms requiring production consistency.

Availability

STGWA35IH135DF2 is available at Aetrix Electronics and suitable for induction heating, microwave oven inverters, and industrial resonant converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-reliability power electronics.

Supply support for STGWA35IH135DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the IH2 series - ST's dedicated soft-switching IGBT product line engineered specifically for high-efficiency resonant topologies in induction heating, microwave ovens, and RF plasma generation.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175 °C junction temperature?

The datasheet specifies E_off = 2.68 mJ at R_G = 10 Ω and T_J = 175 °C. Increasing R_G to 15 Ω raises E_off to ~3.4 mJ per Figure 17, exceeding safe SOA limits at high current. ST recommends R_G ≤ 12 Ω for continuous operation at rated current and temperature to maintain thermal margin.

Can STGWA35IH135DF2 be paralleled without emitter resistors?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5%) enable stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and identical heatsink mounting pressure to ensure uniform thermal coupling across all devices.

Is the TO-247 tab electrically isolated from the package body?

No - the metal tab is internally connected to the collector (C) terminal. Electrical isolation from the heatsink must be achieved using an insulating thermal pad or ceramic washer. Mounting torque must comply with ST's 0.7–0.9 N·m specification to ensure mechanical integrity and thermal performance.

Does the co-packaged diode support bidirectional current flow in synchronous rectification?

No - the integrated diode is unidirectional and optimized for freewheeling only. It lacks the reverse conduction capability and gate-controlled turn-off required for synchronous rectification. For such topologies, discrete MOSFETs or actively controlled IGBTs with external diodes are required.

STGWA35IH135DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1350 V

Current - Collector (Ic) (Max):: 70 A

Current - Collector Pulsed (Icm):: 140 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 30A

Power - Max:: 416 W

Switching Energy:: 1.6mJ (off)

Input Type:: Standard

Gate Charge:: 258 nC

Td (on/off) @ 25°C:: -

Test Condition:: 600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA35IH135DF2 FAQ

1.How can I place an order for STGWA35IH135DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA35IH135DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA35IH135DF2 reliable?

The price and inventory of STGWA35IH135DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA35IH135DF2 is usually 5 days.

3.What payment methods are accepted for STGWA35IH135DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA35IH135DF2 transactions.

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4.How is shipping managed for STGWA35IH135DF2?

STGWA35IH135DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA35IH135DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA35IH135DF2?

For technical support, including STGWA35IH135DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA35IH135DF2 requirements.

6.How does Aetrix verify that STGWA35IH135DF2 is sourced from the original manufacturer or authorized distributors?

All STGWA35IH135DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA35IH135DF2 meets industry standards.

7.What is the process for return or replacement of STGWA35IH135DF2?

All STGWA35IH135DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA35IH135DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA35IH135DF2 part is unused and in its original packaging.

Return procedure for STGWA35IH135DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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