STMicroelectronics STGWA40H120DF2

Overview

STGWA40H120DF2 from STMicroelectronics is a 1200 V, 40 A trench-gate field-stop IGBT with integrated fast-recovery antiparallel diode in TO-247 long leads package. It delivers V_CE(sat) = 2.1 V (typ.) at I_C = 40 A and T_J = 25 °C, 5 μs short-circuit withstand time at T_J = 150 °C, and R_thJC = 0.32 °C/W (IGBT), enabling high-efficiency operation in photovoltaic inverters and welding equipment.

For engineers reviewing the STGWA40H120DF2 datasheet, STGWA40H120DF2 pinout, STGWA40H120DF2 application, or STGWA40H120DF2 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, minimized tail current for reduced turn-off loss, and low thermal resistance for high-power-density designs.

Technical Context

This H-series IGBT uses ST's proprietary trench gate field-stop structure to balance conduction and switching losses-achieving E_on = 1.81 mJ and E_off = 2.46 mJ (T_J = 175 °C) under 600 V, 40 A, R_G = 10 Ω conditions. Its integrated diode exhibits t_rr = 484 ns and Q_rr = 4.5 µC at T_J = 175 °C, supporting high-frequency hard-switching topologies.

The device features a slightly positive V_CE(sat) temperature coefficient and tight parameter distribution, enabling stable parallel operation without external current-sharing resistors. Its 1200 V blocking voltage and 5 µs short-circuit capability support robust protection in industrial UPS and PFC stages operating up to 175 °C junction temperature.

Key Specifications

Pinout & Package

TO-247 long leads package (JEDEC TO-247AD variant) with isolated mounting hole, optimized for high-voltage isolation and mechanical stability in industrial power modules. Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN40N120B3 and IKW40N120H3, STGWA40H120DF2 offers the lowest V_CE(sat) at high temperature and integrated diode-reducing BOM count and PCB area in space-constrained PV inverters, while maintaining competitive short-circuit robustness.

Availability

STGWA40H120DF2 is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for STGWA40H120DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

This device belongs to ST's H-series high-speed IGBT portfolio, engineered specifically for high-frequency, high-efficiency power conversion in renewable energy and industrial motor control applications.

FAQ

What is the maximum allowable gate-emitter voltage for STGWA40H120DF2?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation, with transient rating of ±30 V for pulses ≤10 µs and duty cycle ≤1%. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive is +15 V / –8 V for optimal switching performance and reliability.

Does STGWA40H120DF2 require a negative gate voltage for turn-off?

No, it operates reliably with 0 V turn-off bias, but applying –8 V improves noise immunity and reduces Miller-induced false turn-on in high-di/dt environments. The device's V_GE(th) range (5–7 V) ensures robust turn-on margin with +15 V drive and stable blocking with 0 V gate.

How does the integrated diode differ from standard FRDs in this IGBT?

The antiparallel diode is co-packaged and co-processed with the IGBT die, ensuring matched thermal characteristics and tight Q_rr distribution (±15%). Its t_rr = 484 ns and soft recovery (dI_rr/dt = 170 A/µs @ T_J = 175 °C) reduce voltage overshoot compared to discrete 600 V FRDs in 1200 V systems.

Can STGWA40H120DF2 be paralleled without external emitter resistors?

Yes-its slightly positive V_CE(sat) temperature coefficient and tight parameter spread (±5% on V_CE(sat)) enable stable current sharing. ST recommends matching gate drive loop inductance and using Kelvin emitter connections, but no external emitter resistors are required for 2–4 device paralleling in industrial PFC modules.