STMicroelectronics STGWA40H120F2
- Part No.:
- STGWA40H120F2
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
STGWA40H120F2.pdf
- Description:
- IGBT BIPO 1200V 40A TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:600
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Product details
Overview
STGWA40H120F2 from STMicroelectronics is a 1200 V, 40 A trench-gate field-stop IGBT in the H-series optimized for high-frequency converters, featuring VCE(sat) = 2.1 V (typ.) at IC = 40 A, 5 µs short-circuit withstand time at TJ = 150 °C, and RthJC = 0.32 °C/W - deployed in photovoltaic inverters and UPS systems.
For engineers reviewing the STGWA40H120F2 datasheet, STGWA40H120F2 pinout, STGWA40H120F2 application, or STGWA40H120F2 equivalent, key selection criteria include switching energy (Eon = 1.81 mJ, Eoff = 2.46 mJ at TJ = 175 °C), safe paralleling capability, and TO-247 long leads thermal performance.
Technical Context
This IGBT employs a proprietary trench gate field-stop structure to balance conduction and switching losses, enabling operation up to 20 kHz in hard-switched topologies. Its slightly positive VCE(sat) temperature coefficient and tight parameter distribution support stable parallel operation without current-sharing resistors.
Dynamic performance is characterized by low Cies (3200 pF), Cres (80 pF), and total gate charge Qg = 158 nC, enabling fast turn-on (td(on) = 36 ns) and controlled turn-off (td(off) = 161 ns) under 175 °C junction conditions with 10 Ω gate resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1200 V - supports DC-link voltages up to 960 V in 3-phase PFC and inverter stages |
| IC (TC = 100 °C) | 40 A - continuous rating usable in forced-air-cooled industrial power modules |
| VCE(sat) (TJ = 175 °C) | 2.5 V - enables <100 W conduction loss at 40 A, critical for thermal budget in compact designs |
| tsc | 5 µs - provides robust short-circuit protection window for fault detection and shutdown |
| RthJC | 0.32 °C/W - allows 146 W power dissipation at ΔT = 46.7 °C case-to-junction rise |
| Eoff (TJ = 175 °C) | 2.46 mJ - defines minimum snubber sizing and heatsink requirements in high-frequency switching |
| Qg | 158 nC - determines gate driver peak current (≥1.6 A @ 10 ns rise) and drive power |
Pinout & Package
TO-247 long leads package with isolated tab (collector), standard 3-pin layout optimized for mechanical stability and thermal transfer in high-power PCB mounting. Tab is electrically connected to collector (pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate | Control terminal requiring ±20 V absolute max; 158 nC total charge dictates gate resistor selection for dV/dt control |
| C (Pin 2, TAB) | Collector | Main high-side power terminal; tab must be mounted to heatsink with electrically insulating thermal interface |
| E (Pin 3) | Emitter | Reference node for gate drive and current sensing; low-inductance layout essential for switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Trench gate field-stop structure | Reduces tail current and switching losses while maintaining 1200 V blocking capability |
| Slightly positive VCE(sat) tempco | Enables inherent current balancing in paralleled configurations without external ballasting |
| 5 µs short-circuit withstand time | Supports reliable overcurrent protection implementation with microsecond-level response |
| Low Cres (80 pF) | Minimizes Miller-induced turn-on risk and reduces gate drive power consumption |
| RthJC = 0.32 °C/W | Permits higher power density in space-constrained industrial power converters |
Applications
| Photovoltaic Inverters | Uninterruptible Power Supply |
|---|---|
|
Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC at 16–20 kHz switching frequency. IC Role / Device Role / Timing Role: High-side IGBT in NPC or T-type inverter leg handling 40 A RMS output current at 1200 V DC-link. Use Value: Low Eoff (2.46 mJ) and minimized tail current reduce thermal stress during high-frequency modulation, extending lifetime under partial-load cycling. |
Use Scenario: Online double-conversion UPS systems delivering clean 50/60 Hz output with zero transfer time during mains failure. IC Role / Device Role / Timing Role: Inverter-stage switch managing bidirectional power flow between battery bank and AC output stage. Use Value: 5 µs short-circuit tolerance enables robust fault containment during load surges or downstream short events without desaturation circuit complexity. |
| Welding Equipment | Power Factor Correction |
|
Use Scenario: IGBT-based inverter welders generating high-current DC or pulsed output (200–500 A) with rapid duty-cycle transitions. IC Role / Device Role / Timing Role: Primary switching device in resonant or hard-switched DC-link chopper controlling arc energy delivery. Use Value: Safe paralleling capability allows scalable current handling using multiple STGWA40H120F2 units without derating or matching. |
Use Scenario: Active front-end rectifiers in industrial motor drives correcting displacement and distortion power factor to >0.99. IC Role / Device Role / Timing Role: Boost switch operating at 15–25 kHz in three-phase Vienna or boost PFC topologies. Use Value: Tight VCE(sat) distribution (±0.1 V) ensures consistent conduction loss across multi-phase legs, improving system efficiency uniformity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN40N120B3 | Higher VCE(sat) (2.7 V @ 40 A), lower Eoff (1.9 mJ), TO-247 package without long leads | Limited thermal margin in high-ambient environments due to higher RthJC (0.45 °C/W) | Prefer when lower turn-off loss dominates over conduction loss and board-level heatsinking is constrained |
| Infineon IKW40N120H3 | Identical VCE(sat) (2.1 V), higher Qg (180 nC), same TO-247 long leads footprint | Requires stronger gate driver (≥1.8 A peak) and larger gate resistor for equivalent dV/dt control | Choose when design already uses Infineon ecosystem tools and requires identical mechanical fit with enhanced ruggedness |
Compared with IXGN40N120B3 and IKW40N120H3, STGWA40H120F2 delivers the lowest combined conduction–switching loss trade-off at 175 °C, validated by its 2.5 V VCE(sat) and 2.46 mJ Eoff, making it optimal for thermally dense, high-reliability converter designs.
Availability
STGWA40H120F2 is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply across extended production lifecycles.
Supply support for STGWA40H120F2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.
This device belongs to ST's H-series IGBT portfolio, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control applications.
FAQ
What is the maximum gate-emitter voltage rating for STGWA40H120F2?
The absolute maximum VGE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases gate oxide stress and leakage; negative bias below –10 V risks gate threshold shift. Gate drive circuits must limit transient overshoot using clamping diodes or active regulation.
Does STGWA40H120F2 include an integrated freewheeling diode?
No - STGWA40H120F2 is a standalone IGBT. The co-packed STGW40H120DF2 variant integrates a matched anti-parallel diode, but this part requires external diode selection. Diode recovery characteristics must be verified against IGBT turn-off timing to avoid shoot-through.
How does the TO-247 long leads variant differ electrically from standard TO-247?
Electrical ratings are identical; the long leads version (STGWA40H120F2) improves mechanical robustness and solder joint reliability in high-vibration environments. Lead length increase (L = 19.92 mm vs. 14.5 mm) adds ~1.5 nH parasitic inductance, requiring localized gate loop minimization.
Can STGWA40H120F2 operate reliably at 175 °C junction temperature continuously?
Yes - rated TJ range is –55 to +175 °C, with all key parameters (VCE(sat), Eoff, tsc) specified at 175 °C. Continuous operation requires maintaining case temperature ≤100 °C per derating curves, supported by RthJC = 0.32 °C/W and proper heatsink interface.
STGWA40H120F2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 80 A
- Current - Collector Pulsed (Icm):
- 160 A
- Vce(on) (Max) @ Vge, Ic:
- 2.6V @ 15V, 40A
- Power - Max:
- 468 W
- Switching Energy:
- 1mJ (on), 1.32mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 158 nC
- Td (on/off) @ 25°C:
- 18ns/152ns
- Test Condition:
- 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247 Long Leads
STGWA40H120F2 FAQ
1.How can I place an order for STGWA40H120F2 through Aetrix?
Please submit a Request for Quotation (RFQ) for STGWA40H120F2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGWA40H120F2 reliable?
The price and inventory of STGWA40H120F2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA40H120F2 is usually 5 days.
3.What payment methods are accepted for STGWA40H120F2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA40H120F2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGWA40H120F2?
STGWA40H120F2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGWA40H120F2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGWA40H120F2?
For technical support, including STGWA40H120F2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA40H120F2 requirements.
6.How does Aetrix verify that STGWA40H120F2 is sourced from the original manufacturer or authorized distributors?
All STGWA40H120F2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA40H120F2 meets industry standards.
7.What is the process for return or replacement of STGWA40H120F2?
All STGWA40H120F2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA40H120F2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGWA40H120F2 part is unused and in its original packaging.
Return procedure for STGWA40H120F2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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