Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA40H65DFB2

Name: STGWA40H65DFB2
Brand: STMicroelectronics
SKU: STGWA40H65DFB2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGWA40H65DFB2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA40H65DFB2.pdf

Description:: IGBT TRENCH FS 650V 72A TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:748

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGWA40H65DFB2 from STMicroelectronics is a 650 V, 40 A high-speed trench gate field-stop IGBT with co-packaged soft-recovery diode in TO-247 long leads package. It delivers low V_CE(sat) = 1.55 V (typ. @ I_C = 40 A), fast switching (t_d(off) = 72 ns, E_off = 410 µJ), and minimized tail current for high-efficiency PFC and solar inverter stages.

For engineers reviewing the STGWA40H65DFB2 datasheet, STGWA40H65DFB2 pinout, STGWA40H65DFB2 application, or STGWA40H65DFB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, diode reverse recovery charge (Q_rr = 730 nC), thermal resistance (R_thJC = 0.65 °C/W), and TJ max = 175 °C operation in high-power DC fast charging systems.

Technical Context

This HB2-series IGBT uses ST's proprietary trench gate field-stop structure optimized for conduction loss reduction at low-to-moderate currents and lower switching energy versus prior generations. Its positive V_CE(sat) temperature coefficient enables stable parallel operation.

The integrated antiparallel diode features very fast and soft recovery (t_rr = 75 ns, Q_rr = 730 nC @ T_J = 25 °C), tight parameter distribution, and minimized tail current-critical for reducing voltage overshoot and EMI in hard-switched topologies like single-phase PFC and string inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage for 650 V bus applications including solar string inverters and EV DC fast chargers.
I_C (T_C = 100 °C)	45 A - Continuous collector current rating at elevated case temperature, enabling compact heatsink design in UPS and welding systems.
V_CE(sat) (I_C = 40 A, T_J = 175 °C)	1.85 V - Confirmed saturation voltage under worst-case thermal stress, directly determining conduction loss in high-duty-cycle PFC stages.
E_off (T_J = 175 °C)	780 µJ - Turn-off energy at maximum junction temperature, defining switching loss budget in 16–32 kHz solar inverter H-bridges.
R_thJC (IGBT)	0.65 °C/W - Low junction-to-case thermal resistance enabling >230 W power dissipation at T_C = 25 °C, critical for forced-air-cooled industrial designs.
Q_rr (T_J = 175 °C)	3110 nC - Reverse recovery charge at max operating temperature, impacting snubber sizing and diode-induced voltage spikes in bidirectional converters.
t_rr (T_J = 175 °C)	125 ns - Diode reverse recovery time at 175 °C, used to calculate dead-time margin in synchronous rectification and active clamp circuits.

Pinout & Package

TO-247 long leads package with isolated mounting tab; three-terminal configuration: Gate (G), Collector (C), Emitter (E). Tab is electrically connected to Collector.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Accepts ±20 V gate drive; requires 153 nC total gate charge for full turn-on; sensitive to dV/dt-induced false triggering.
C (Tab / Pin 2)	High-side power output node	Collector terminal bonded to metal tab; must be electrically isolated from heatsink unless system topology permits common-collector reference.
E (Pin 3)	Emitter return path	Low-inductance emitter connection critical for minimizing shoot-through risk; serves as reference for gate drive and current sensing.

Key Features

Feature	Design Value
Very fast soft recovery co-packaged diode	Enables zero-voltage switching (ZVS) assist in resonant PFC and reduces EMI in 20–50 kHz solar inverters without external snubbers.
Positive V_CE(sat) temperature coefficient	Ensures inherent current sharing stability when paralleling multiple devices in high-current UPS or EV charger modules.
Tight parameter distribution	Reduces binning requirements and simplifies gate driver design across production batches for industrial OEMs.
Minimized tail current	Lowers turn-off losses and dv/dt stress on DC-link capacitors in hard-switched bridge legs of central inverters.
175 °C maximum junction temperature	Supports derated operation in confined enclosures (e.g., wall-mounted EV chargers) without active cooling redundancy.

Applications

Single-Phase PFC Converters

Solar String Inverters

Use Scenario: Boost-stage switching in 3–5 kW residential PFC front-ends with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; operates at 65–100 kHz with 50% duty cycle.

Use Value: Low V_CE(sat) and soft diode reduce conduction + recovery losses by ≥12% vs. standard HB1 IGBTs, improving overall efficiency to >98.5%.

Use Scenario: DC/AC H-bridge stage in 3–10 kW string inverters with MPPT tracking and reactive power support.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 40 A RMS output current; switched at 16–20 kHz with sinusoidal PWM.

Use Value: 125 ns t_rr at 175 °C allows safe 400 ns dead-time setting, preventing shoot-through while maintaining THD < 2.5%.

Uninterruptible Power Supplies

DC Fast Charging Stations

Use Scenario: Inverter stage in 5–15 kVA online UPS systems requiring zero-transfer-time backup and harmonic mitigation.

IC Role / Device Role / Timing Role: Full-bridge inverter switch operating in double-pulse mode with 10–15 kHz carrier frequency and active filtering.

Use Value: R_thJC = 0.65 °C/W enables 230 W dissipation at T_C = 80 °C, supporting fanless operation in medical-grade UPS enclosures.

Use Scenario: Secondary-side DC/DC isolation stage in 150–350 kW liquid-cooled EV chargers converting 800 V DC to 400 V battery level.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in phase-shifted full-bridge topology; handles 40 A peak current at 100 kHz.

Use Value: Tight parameter distribution ensures consistent timing across 12+ paralleled modules, eliminating need for per-device gate resistor tuning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N60B3	600 V rating, higher V_CE(sat) = 1.9 V @ 40 A, slower diode (t_rr = 180 ns), no soft recovery.	Lower voltage headroom limits use in 800 V DC fast charging; higher E_off increases thermal load in 32 kHz PFC.	Select only if 600 V rating suffices and cost sensitivity outweighs efficiency targets.
Infineon IKW40N65ES5	Same 650 V/40 A rating but uses Enhanced Speed technology; V_CE(sat) = 1.6 V @ 40 A, Q_rr = 1100 nC @ 25 °C (higher than ST's 730 nC).	Higher Q_rr demands larger snubbers in high-di/dt PFC; less suitable for ultra-low-EMI solar inverters.	Preferable where gate charge (130 nC) and lower V_GE(th) simplify drive circuitry over diode softness.

Compared with IXGN40N60B3 and IKW40N65ES5, STGWA40H65DFB2 offers the lowest Q_rr and softest diode recovery among 650 V 40 A IGBTs, making it optimal for EMI-sensitive, high-frequency PFC and string inverter designs where diode-induced voltage spikes must be minimized.

Availability

STGWA40H65DFB2 is available at Aetrix Electronics and suitable for solar string inverters, EV DC fast charging stations, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial deployment.

Supply support for STGWA40H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGWA40H65DFB2 belongs to the HB2-series high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and electrified infrastructure applications.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175 °C?

The datasheet specifies E_off = 780 µJ at T_J = 175 °C with R_G = 4.7 Ω. Increasing R_G beyond 10 Ω raises switching time and energy disproportionately due to reduced di/dt control; ST recommends 3.3–6.8 Ω for balanced speed and voltage overshoot in 16–32 kHz applications.

Can STGWA40H65DFB2 replace STGW40H65FB in existing designs?

Yes-STGWA40H65DFB2 is a direct drop-in replacement for STGW40H65FB with identical TO-247 long leads pinout and improved V_CE(sat), switching energy, and diode softness. No layout or gate drive changes are required, though efficiency gains may allow thermal derating.

Is the TO-247 tab electrically isolated from the package body?

No-the metal tab is internally connected to the Collector (C) terminal. Electrical isolation from the heatsink is mandatory unless the system topology explicitly references the heatsink to the high-side DC bus; creepage/clearance must comply with IEC 60664-1 for 650 V working voltage.

What is the typical reverse recovery charge of the integrated diode at 100 °C?

Q_rr = 1850 nC at T_J = 100 °C (interpolated from datasheet curves Figure 23), measured at I_F = 40 A, V_R = 400 V, and di/dt = 1000 A/µs. This value informs snubber capacitor sizing and impacts turn-on loss of the complementary switch in bridge configurations.

STGWA40H65DFB2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 72 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 40A

Power - Max:: 230 W

Switching Energy:: 765µJ (on), 410µJ (off)

Input Type:: Standard

Gate Charge:: 153 nC

Td (on/off) @ 25°C:: 18ns/72ns

Test Condition:: 400V, 40A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 75 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA40H65DFB2 FAQ

1.How can I place an order for STGWA40H65DFB2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA40H65DFB2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA40H65DFB2 reliable?

The price and inventory of STGWA40H65DFB2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA40H65DFB2 is usually 5 days.

3.What payment methods are accepted for STGWA40H65DFB2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA40H65DFB2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA40H65DFB2?

STGWA40H65DFB2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA40H65DFB2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA40H65DFB2?

For technical support, including STGWA40H65DFB2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA40H65DFB2 requirements.

6.How does Aetrix verify that STGWA40H65DFB2 is sourced from the original manufacturer or authorized distributors?

All STGWA40H65DFB2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA40H65DFB2 meets industry standards.

7.What is the process for return or replacement of STGWA40H65DFB2?

All STGWA40H65DFB2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA40H65DFB2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA40H65DFB2 part is unused and in its original packaging.

Return procedure for STGWA40H65DFB2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…