STMicroelectronics STGWA40HP65FB

Overview

STGWA40HP65FB from STMicroelectronics is a trench gate field-stop IGBT with co-packaged freewheeling diode in TO-247 long leads package, rated 650 V / 40 A (TC = 100 °C), featuring 1.6 V typical V_CE(sat), 142 ns turn-off delay, and 363 µJ E_off at 25 °C - optimized for high-efficiency PFC stages in industrial AC-DC converters.

For engineers reviewing the STGWA40HP65FB datasheet, STGWA40HP65FB pinout, STGWA40HP65FB application, or STGWA40HP65FB equivalent, key selection criteria include V_CE(sat) temperature coefficient (+), R_thJC = 0.53 °C/W, tight parameter distribution for paralleling, and integrated diode reverse recovery performance (t_rr = 140 ns @ 25 °C).

Technical Context

This HB-series IGBT employs a proprietary trench gate field-stop structure to balance conduction loss (V_CE(sat) = 1.6 V @ 40 A, 25 °C) and switching loss (E_off = 363 µJ @ 400 V/40 A). Its slightly positive V_CE(sat) temperature coefficient enables stable current sharing during parallel operation.

Dynamic behavior is characterized by low tail current, Q_g = 210 nC, C_ies = 5412 pF, and diode t_rr/Q_rr = 140 ns / 21 nC (25 °C) - supporting high-frequency (>20 kHz) PFC designs with minimized switching stress and thermal runaway risk.

Key Specifications

Pinout & Package

TO-247 long leads package with isolated tab (collector-connected), 3-terminal configuration: Gate (G), Collector (C), Emitter (E). Tab serves as primary heat path and electrically tied to collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based PFC applications.

Compared with IXGN40N60B3 and IKW40N65ES5, STGWA40HP65FB delivers superior PFC efficiency via lowest V_CE(sat) and fastest diode recovery, enabling smaller heatsinks and higher power density in space-constrained industrial enclosures.

Availability

STGWA40HP65FB is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGWA40HP65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's HB-series high-speed IGBT portfolio, engineered specifically for high-efficiency, high-frequency PFC and motor drive applications where conduction-switching trade-offs must be tightly balanced.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG = 5 Ω for all dynamic test conditions. Using RG > 10 Ω increases td(off) beyond 160 ns and raises E_off by >25%, risking thermal overload in 50 kHz+ PFC. For noise immunity, add a 100 Ω gate-to-emitter resistor in parallel with the driver output, not in series with RG.

Can STGWA40HP65FB be used without a heatsink in free-air convection?

No. At 40 A continuous current and 1.6 V V_CE(sat), conduction loss alone exceeds 64 W. Even with ideal 50 °C/W R_thJA, junction temperature would exceed 175 °C within seconds. A minimum 0.5 °C/W heatsink is required for TC ≤ 100 °C operation.

Is the co-packaged diode rated for continuous 5 A forward current at 175 °C?

Yes. Table 1 confirms IF = 5 A at TC = 100 °C and TC = 25 °C; Figure 10 shows VF = 1.75 V at IF = 5 A and TJ = 175 °C, confirming full-rated diode operation up to maximum junction temperature without derating.

Does the positive V_CE(sat) temperature coefficient apply across the full -55 °C to 175 °C range?

Yes. Figure 5 shows monotonic increase in V_CE(sat) from 1.4 V at -40 °C to 2.2 V at 175 °C for IC = 40 A, confirming consistent positive coefficient across the entire operating range - essential for predictable paralleling behavior in wide-temperature environments.