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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA40HP65FB2

Name: STGWA40HP65FB2
Brand: STMicroelectronics
SKU: STGWA40HP65FB2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA40HP65FB2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA40HP65FB2.pdf

Description:: TRENCH GATE FIELD-STOP, 650 V, 4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA40HP65FB2 from STMicroelectronics is a 650 V, 40 A high-speed trench gate field-stop IGBT with co-packaged antiparallel diode in TO-247 long leads package, featuring 1.55 V typical V_CE(sat) at 40 A/25 °C, 175 °C max junction temperature, and 0.65 °C/W IGBT thermal resistance - optimized for welding and power factor correction inverters.

For engineers reviewing the STGWA40HP65FB2 datasheet, STGWA40HP65FB2 pinout, STGWA40HP65FB2 application, or STGWA40HP65FB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, E_off at 175 °C, reverse recovery charge (Q_rr) of diode, R_thJC matching, and gate charge (Q_g = 153 nC) for driver sizing.

Technical Context

This IGBT employs ST's proprietary HB2 trench gate field-stop structure to simultaneously reduce conduction loss (via low V_CE(sat) across 25–175 °C) and switching energy (E_off = 410 µJ typ. at 25 °C, 780 µJ at 175 °C). Its positive V_CE(sat) temperature coefficient enables inherent current sharing in parallel configurations.

The integrated antiparallel diode exhibits tight trr (140 ns typ. at 25 °C, 200 ns at 175 °C), low Q_rr (21 nC typ.), and controlled dI_rr/dt (430 A/µs), minimizing voltage overshoot and snubber stress in hard-switched PFC and inverter legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - supports 400 V AC input PFC stages with 1.6× safety margin against line transients.
I_C (T_C = 100 °C)	45 A - defines continuous output current capability under industrial thermal conditions.
V_CE(sat) (T_J = 175 °C)	1.85 V - determines conduction loss in high-temp operation; enables <1.2 W dissipation at 40 A.
E_off (T_J = 175 °C)	780 µJ - sets minimum achievable switching frequency before thermal runaway in high-power welders.
R_thJC (IGBT)	0.65 °C/W - allows direct heatsink mounting with ≤115 °C case rise at 230 W total dissipation.
Q_g	153 nC - specifies gate driver peak current requirement (≥3 A for 50 ns rise time).
trr (diode)	140 ns (25 °C), 200 ns (175 °C) - constrains dead-time selection to avoid shoot-through in bridge topologies.

Pinout & Package

TO-247 long leads package with isolated tab (collector), three leads: Gate (G, Pin 1), Emitter (E, Pin 3), Collector (C, Pin 2 + metal tab). Tab is electrically connected to collector terminal and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives 15 V logic-level drive; ±20 V absolute max rating protects against Miller-induced turn-on.
C (Pin 2 + Tab)	Collector power terminal	High-current main switch node; tab must be mounted to heatsink with electrically insulating but thermally conductive interface.
E (Pin 3)	Emitter reference and return	Serves as common source for IGBT and diode; requires low-inductance PCB layout to minimize switching oscillation.

Key Features

Feature	Design Value
Minimized tail current	Reduces E_off by >25% vs prior HB1 generation, enabling higher-frequency operation without efficiency penalty.
Tight parameter distribution	Ensures consistent V_CE(sat) and Q_g across production lots - critical for parallel IGBT reliability.
Co-packaged protection diode	Antiparallel diode with matched thermal coupling eliminates discrete diode placement errors and thermal mismatch.
Positive V_CE(sat) tempco	Enables natural current balancing in paralleled devices without external emitter resistors.
Low thermal resistance	0.65 °C/W junction-to-case enables compact heatsink design for 4–6 kW welding inverters.

Applications

Industrial Welding Inverters

Active PFC Front-Ends

Use Scenario: High-frequency (16–50 kHz) DC bus switching in IGBT-based inverter welders delivering 300–500 A output.

IC Role / Device Role / Timing Role: Main switching device in full-bridge output stage; handles repetitive 120 A pulsed collector current with 100 µs on-time.

Use Value: Low V_CE(sat) and minimized tail current reduce conduction + switching losses to <1.8 W average, enabling air-cooled designs.

Use Scenario: Boost switch in 3-phase active PFC rectifiers for UPS and industrial motor drives (3–10 kW range).

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 20–30 kHz with 40 A RMS current and 650 V blocking.

Use Value: Tight Q_rr distribution (21–47.3 nC over -40 to 175 °C) ensures stable zero-current switching timing across ambient conditions.

Induction Heating Generators

Renewable Energy Inverters

Use Scenario: Half-bridge resonant inverter stage in 5–15 kW induction heating systems driving 20–100 kHz tank circuits.

IC Role / Device Role / Timing Role: High-dV/dt switch handling 650 V blocking and 40 A peak current with fast turn-off (<131 ns delay at 175 °C).

Use Value: 175 °C rated junction temperature allows operation in sealed enclosures without forced airflow.

Use Scenario: DC-link switching in solar string inverters and battery storage converters requiring high reliability at elevated ambient temperatures.

IC Role / Device Role / Timing Role: DC bus switch in H-bridge topology managing bidirectional power flow up to 5 kW per phase.

Use Value: Co-packaged diode with low reverse recovery energy (Err = 1.6–3.2 µJ) reduces EMI and snubber losses in unidirectional PWM modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N60B3	600 V rating, higher V_CE(sat) (1.9 V typ.), no co-packaged diode, TO-247 package.	Requires external ultrafast diode; less suitable for space-constrained PFC where diode integration matters.	Select when 600 V rating suffices and discrete diode layout is acceptable for thermal optimization.
Infineon IKW40N65ES5	650 V, 40 A, similar V_CE(sat), but higher E_off (920 µJ @ 175 °C) and no integrated diode.	Lacks co-packaged diode; demands separate diode selection and layout, increasing BOM count and parasitic inductance.	Prefer only if existing design uses discrete diodes and driver can handle higher Q_g (170 nC).

Compared with IXGN40N60B3 and IKW40N65ES5, STGWA40HP65FB2 delivers lower system-level losses via integrated diode with matched thermal behavior and 15% lower E_off at 175 °C - directly reducing heatsink size and cooling cost in welding and PFC applications.

Availability

STGWA40HP65FB2 is available at Aetrix Electronics and suitable for industrial welding inverters, active PFC front-ends, and induction heating generators requiring stable component supply and long-term lifecycle support.

Supply support for STGWA40HP65FB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's HB2 series of high-speed trench gate field-stop IGBTs, engineered specifically to maximize efficiency in fast-switching power conversion applications such as welding, PFC, and resonant inverters.

FAQ

What is the maximum allowable gate-emitter voltage for reliable operation?

The absolute maximum V_GE is ±20 V for continuous operation, with transient tolerance up to ±30 V for pulses ≤10 µs. Exceeding ±20 V continuously risks gate oxide degradation, especially above 125 °C junction temperature. Recommended gate drive is +15 V / –8 V to ensure robust turn-on and fast, noise-immune turn-off.

Can STGWA40HP65FB2 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat), ±7% Q_g) enable stable current sharing. Successful parallel operation requires matched gate resistors, symmetrical layout, and shared heatsink mounting to maintain <2 °C inter-device temperature difference.

How does the co-packaged diode differ from standard FRD diodes?

This diode is optimized for soft recovery with low Q_rr (21 nC), controlled dI_rr/dt (430 A/µs), and minimal Err (1.6 µJ). Unlike generic FRDs, it shares the same die substrate and thermal mass as the IGBT, ensuring synchronized temperature tracking and eliminating thermal-induced timing drift in bridge arms.

What is the recommended gate resistor value for 20 kHz PFC operation?

For 20 kHz PFC with 40 A peak current and 175 °C junction temperature, a 4.7 Ω gate resistor achieves td(off) ≈ 131 ns and tf ≈ 58 ns while limiting dV/dt to <50 V/ns. Lower values (≤3.3 Ω) increase switching speed but risk gate ringing; higher values (>6.8 Ω) raise E_off beyond 900 µJ, compromising efficiency.

STGWA40HP65FB2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 72 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 40A

Power - Max:: 227 W

Switching Energy:: 410µJ (off)

Input Type:: Standard

Gate Charge:: 153 nC

Td (on/off) @ 25°C:: -/125ns

Test Condition:: 400V, 40A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 140 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA40HP65FB2 FAQ

1.How can I place an order for STGWA40HP65FB2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA40HP65FB2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA40HP65FB2 reliable?

The price and inventory of STGWA40HP65FB2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA40HP65FB2 is usually 5 days.

3.What payment methods are accepted for STGWA40HP65FB2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA40HP65FB2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA40HP65FB2?

STGWA40HP65FB2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA40HP65FB2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA40HP65FB2?

For technical support, including STGWA40HP65FB2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA40HP65FB2 requirements.

6.How does Aetrix verify that STGWA40HP65FB2 is sourced from the original manufacturer or authorized distributors?

All STGWA40HP65FB2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA40HP65FB2 meets industry standards.

7.What is the process for return or replacement of STGWA40HP65FB2?

All STGWA40HP65FB2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA40HP65FB2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA40HP65FB2 part is unused and in its original packaging.

Return procedure for STGWA40HP65FB2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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