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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA40IH65DF

Name: STGWA40IH65DF
Brand: STMicroelectronics
SKU: STGWA40IH65DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA40IH65DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA40IH65DF.pdf

Description:: TRENCH GATE FIELD-STOP 650 V 40

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA40IH65DF from STMicroelectronics is a 650 V, 40 A trench gate field-stop IGBT with co-packaged freewheeling diode, optimized for soft commutation in resonant topologies. It delivers 1.5 V typical V_CE(sat) at 40 A and 15 V_GE, features minimized tail current, tight parameter distribution, and operates up to 175 °C junction temperature - deployed in induction cooking power stages.

For engineers reviewing the STGWA40IH65DF datasheet, STGWA40IH65DF pinout, STGWA40IH65DF application, or STGWA40IH65DF equivalent, key selection criteria include soft-switching E_off (190–385 µJ), low R_thJC (0.63 °C/W), co-packaged diode VF (1.85–2.65 V), positive V_CE(sat) temperature coefficient, and TO-247 long leads thermal performance.

Technical Context

This IGBT employs a proprietary trench gate field-stop structure balancing conduction loss (V_CE(sat) = 1.50 V typ. @ 40 A, 25 °C) and switching loss (E_off = 190 µJ typ. @ 320 V, 40 A, 25 °C). Its design targets zero-voltage or zero-current switching circuits where tail current minimization directly improves efficiency.

The integrated diode exhibits low forward voltage (VF = 1.85 V typ. @ 20 A, 25 °C) and a positive temperature coefficient for VF, enabling stable parallel operation. Thermal resistance junction-to-case is asymmetric: 0.63 °C/W for IGBT and 2.08 °C/W for diode - critical for layout-aware heatsinking in high-power resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands full DC bus voltage in 400 V AC-fed resonant inverters with margin.
I_C (T_C = 100 °C)	40 A - Sustains continuous output current under real-world heatsink conditions.
V_CE(sat) (T_J = 175 °C)	1.90 V - Confirmed saturation voltage at max operating temperature ensures thermal stability.
E_off (T_J = 175 °C)	385 µJ - Measured turn-off energy under worst-case thermal stress for snubbed inductive loads.
R_thJC (IGBT)	0.63 °C/W - Enables high-power density thermal design with direct case mounting to heatsink.
V_F (diode, T_J = 175 °C)	1.55 V - Low forward drop at elevated temperature reduces freewheeling losses in half-bridge leg.
Q_g	114 nC - Total gate charge value determines driver sizing and switching speed trade-offs.

Pinout & Package

TO-247 long leads package with isolated tab (collector connected to case); pin configuration: G (Gate, Pin 1), C (Collector, Pin 2 / Tab), E (Emitter, Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Accepts ±20 V gate drive; 114 nC total charge requires robust gate driver with ≥2 A peak sourcing/sinking.
C (Pin 2 + Tab)	Collector terminal / thermal path	Electrically and thermally tied to metal tab; must be electrically isolated from heatsink unless system ground referenced.
E (Pin 3)	Emitter return node	Serves as common reference for gate drive and current sensing; low-inductance layout critical for dV/dt immunity.

Key Features

Feature	Design Value
Soft commutation optimization	Minimized tail current reduces switching loss and EMI in ZVS/ZCS resonant converters.
Co-packaged diode	Low-VF (1.85 V typ.) freewheeling diode eliminates discrete diode placement and parasitic inductance.
Positive V_CE(sat) tempco	Enables inherent current sharing in paralleled IGBTs without external ballasting resistors.
Tight parameter distribution	Narrow V_CE(sat) and V_GE(th) spreads improve consistency across production batches for BOM reliability.
High T_J rating	175 °C maximum junction temperature supports compact thermal design in space-constrained induction cooktops.

Applications

Induction Cooking

Resonant Converter

Use Scenario: Half-bridge inverter driving series-resonant tank (LC) at 20–50 kHz for pan detection and heating control.

IC Role / Device Role / Timing Role: Main switching device in high-side/low-side leg; handles bidirectional current during resonant phase reversal.

Use Value: Low tail current and 1.5 V V_CE(sat) reduce conduction loss at 40 A RMS; co-packaged diode enables clean freewheeling without reverse recovery spikes.

Use Scenario: Full-bridge LLC resonant converter in industrial power supplies delivering 1–3 kW with >95% efficiency.

IC Role / Device Role / Timing Role: Primary-side switch managing ZVS transitions; timing synchronized to resonant frequency via variable-frequency control.

Use Value: 385 µJ E_off at 175 °C ensures predictable switching loss at full load and high ambient; 0.63 °C/W R_thJC maintains <125 °C case temp under forced air cooling.

Microwave Oven Inverter

High-Frequency Induction Heater

Use Scenario: 2.45 GHz magnetron power supply using asymmetrical half-bridge with soft-switched IGBTs.

IC Role / Device Role / Timing Role: High-reliability switching element handling pulsed 40 A peak currents at 20–30 kHz carrier frequency.

Use Value: 120 A pulsed collector current rating accommodates magnetron startup surges; -55 to 175 °C operating range supports wide ambient deployment.

Use Scenario: 100–300 kHz solid-state induction heater for metal hardening, requiring precise duty-cycle control and thermal resilience.

IC Role / Device Role / Timing Role: Fast-switching power stage component in dual-phase inverter topology with active current balancing.

Use Value: Tight V_GE(th) distribution (5–7 V) ensures consistent turn-on timing across parallel modules; positive tempco prevents thermal runaway during sustained 100% duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar soft-switching IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N60B3	600 V rating, higher V_CE(sat) (1.8 V typ.), no co-packaged diode, TO-247-3L package	Requires external ultrafast diode; less suitable for compact induction designs due to added layout complexity	Prefer when system-level diode selection allows optimization of reverse recovery and cost trade-offs
Infineon IKW40N65ES5	650 V, 40 A, Enhanced Speed technology; lower E_off (150 µJ), but higher V_CE(sat) (1.75 V typ. @ 175 °C)	Better for hard-switched PFC stages; co-packaged diode VF higher (2.2 V typ.), less efficient in resonant freewheeling	Choose when priority is lowest possible switching loss over conduction loss in mixed-mode topologies

Compared with IXGN40N60B3 and IKW40N65ES5, STGWA40IH65DF uniquely combines low V_CE(sat), minimized tail current, and low-VF co-packaged diode - making it optimal for thermally constrained, high-efficiency resonant systems where both conduction and soft-switching losses dominate.

Availability

STGWA40IH65DF is available at Aetrix Electronics and suitable for induction cooking modules, microwave oven inverters, and resonant DC-DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGWA40IH65DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's IH-series soft-switching IGBT product line, engineered specifically for high-efficiency resonant topologies in cooking appliances and RF heating systems where low tail current and co-packaged diode integration are critical.

FAQ

What is the maximum recommended gate resistor for reliable turn-off in soft-switching applications?

A 22 Ω gate resistor is validated in the datasheet for inductive load testing at 400 V and 40 A, yielding td(off) = 210 ns and tf = 12.5 ns at 25 °C. At 175 °C junction temperature, td(off) increases to 216 ns - confirming stable timing margin. Lower values (e.g., 10 Ω) may be used for faster switching but require careful driver capability verification.

Can STGWA40IH65DF be paralleled for higher current capacity?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±0.1 V V_CE(sat)) enable stable current sharing. Layout symmetry, matched gate drive paths, and individual emitter resistors (0.01 Ω) are required. Derating to 35 A per device is recommended for 175 °C operation in parallel configurations.

Is the TO-247 long leads package compatible with standard TO-247 heatsinks?

Yes - mechanical dimensions match JEDEC TO-247-3L standards (D = 21.0 mm, E = 15.8 mm, L = 20.0 mm). The "long leads" designation refers to extended lead length for through-hole PCB mounting, not altered footprint. Thermal interface material and mounting torque (0.5–0.7 N·m) must comply with ST's ECOPACK guidelines.

Does the co-packaged diode support reverse recovery in hard-switched configurations?

No - this diode is optimized for soft-commutation freewheeling, not hard-switched recovery. Its reverse recovery charge (Q_rr) is not characterized in the datasheet. Using it in hard-switched topologies risks excessive dv/dt-induced failure and oscillation; dedicated ultrafast or SiC Schottky diodes are required for such applications.

STGWA40IH65DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: IH

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 40A

Power - Max:: 238 W

Switching Energy:: 190µJ (off)

Input Type:: Standard

Gate Charge:: 114 nC

Td (on/off) @ 25°C:: -/210ns

Test Condition:: 400V, 40A, 22Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA40IH65DF FAQ

1.How can I place an order for STGWA40IH65DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA40IH65DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA40IH65DF reliable?

The price and inventory of STGWA40IH65DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA40IH65DF is usually 5 days.

3.What payment methods are accepted for STGWA40IH65DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA40IH65DF transactions.

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4.How is shipping managed for STGWA40IH65DF?

STGWA40IH65DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA40IH65DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA40IH65DF?

For technical support, including STGWA40IH65DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA40IH65DF requirements.

6.How does Aetrix verify that STGWA40IH65DF is sourced from the original manufacturer or authorized distributors?

All STGWA40IH65DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA40IH65DF meets industry standards.

7.What is the process for return or replacement of STGWA40IH65DF?

All STGWA40IH65DF units undergo pre-shipment inspection (PSI). If there is an issue with STGWA40IH65DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA40IH65DF part is unused and in its original packaging.

Return procedure for STGWA40IH65DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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