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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA40M120DF3

Name: STGWA40M120DF3
Brand: STMicroelectronics
SKU: STGWA40M120DF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA40M120DF3

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA40M120DF3.pdf

Description:: IGBT TRENCH FS 1200V 80A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGWA40M120DF3 from STMicroelectronics is a 1200 V, 40 A trench-gate field-stop IGBT with integrated soft-recovery antiparallel diode in TO-247 long leads package. It delivers V_CE(sat) = 1.85 V (typ.) at I_C = 40 A, 10 µs short-circuit withstand time, and R_thJC = 0.32 °C/W (IGBT), enabling high-efficiency, robust operation in high-power industrial inverters and UPS systems.

For engineers reviewing the STGWA40M120DF3 datasheet, STGWA40M120DF3 pinout, STGWA40M120DF3 application, or STGWA40M120DF3 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, low thermal resistance, and diode reverse recovery charge (Q_rr = 2575 nC at T_J = 25 °C) for reduced switching loss in hard-switched topologies.

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture optimized for balanced conduction and switching losses in 1200 V systems. Its design integrates a monolithic, soft-recovery antiparallel diode with low Q_rr and controlled dI_rr/dt to minimize voltage overshoot and EMI during turn-off.

The device supports stable operation up to T_J = 175 °C and features a gate threshold voltage (V_GE(th)) of 5–7 V, ensuring reliable turn-on margin under high-temperature conditions while maintaining low gate drive power via C_ies = 2500 pF and Q_g = 125 nC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Withstands DC bus voltages up to 1200 V in solar inverters and industrial drives without breakdown.
I_C (T_C = 100 °C)	40 A - Continuous current rating at case temperature of 100 °C, defining usable output power in forced-air-cooled systems.
V_CE(sat) (T_J = 25 °C)	1.85 V (typ.) - Low saturation voltage reduces conduction loss and improves system efficiency at rated load.
t_sc	10 µs - Minimum short-circuit withstand time under V_CC ≤ 600 V and T_J,start ≤ 150 °C, enabling robust fault handling in motor drives.
R_thJC (IGBT)	0.32 °C/W - Low junction-to-case thermal resistance allows efficient heat transfer to heatsink, supporting high power density designs.
Q_rr (T_J = 25 °C)	2575 nC - Reverse recovery charge of integrated diode determines turn-on loss contribution in bridge-leg configurations.
E_off	2.25 mJ (typ.) - Turn-off energy at 600 V, 40 A, T_J = 25 °C, directly impacting thermal design and snubber requirements.

Pinout & Package

STGWA40M120DF3 uses the TO-247 long leads package (mechanical dimensions per Table 8, DS10301 Rev 4), featuring insulated tab (collector), three leads: Gate (G), Emitter (E), and Collector (C). The collector tab is electrically connected to pin 2 (C), while pin 1 is Gate and pin 3 is Emitter - confirmed by ST's official pin diagram (Figure 33) and marking "NG1E3C2T" indicating pin 1 = G, pin 2 = C (tab), pin 3 = E.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction; requires ±20 V max gate-emitter voltage and 125 nC total gate charge for full turn-on.
Pin 2 (C / Tab)	Collector terminal (isolated metal tab)	Main high-side current path; tab serves as primary thermal interface and must be electrically isolated from heatsink unless system design permits common-collector topology.
Pin 3 (E)	Emitter terminal	Reference node for gate drive and current sensing; shared emitter path for IGBT and integrated diode enables compact half-bridge layout.

Key Features

Feature	Design Value
Positive V_CE(sat) temperature coefficient	Enables inherently stable current sharing when multiple devices are paralleled, reducing need for external current-balancing resistors.
Tight parameter distribution	Minimizes unit-to-unit variation in V_CE(sat), V_GE(th), and switching times - critical for consistent system-level timing and loss matching in multi-phase inverters.
Soft and fast-recovery antiparallel diode	Reverse recovery time t_rr = 355 ns (T_J = 25 °C) with low dI_rr/dt (1110 A/µs) suppresses voltage spikes and EMI during commutation.
175 °C maximum junction temperature	Supports operation in high-ambient environments (e.g., enclosed UPS cabinets) without derating, extending thermal design margin.
Low R_thJC (0.32 °C/W)	Reduces temperature rise per watt dissipated, allowing higher continuous power output or smaller heatsinks in space-constrained applications.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 15–30 kW variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: High-side switch in six-pack IGBT module configuration; handles 1200 V DC link and 40 A RMS output current with precise PWM-controlled switching.

Use Value: 10 µs short-circuit capability ensures survival during motor stall faults, while low V_CE(sat) maintains >98% inverter efficiency at full load.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery-backed DC bus.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in full-bridge topology; switches at 8–16 kHz to synthesize sinusoidal output with low THD.

Use Value: Integrated soft-recovery diode minimizes reverse recovery loss during zero-voltage switching transitions, improving battery runtime by ~2.3% versus standard diodes.

Solar String Inverters

Industrial Welding Equipment

Use Scenario: DC–AC conversion stage in 10–25 kW string inverters interfacing PV arrays to grid.

IC Role / Device Role / Timing Role: Main switching device in H-bridge or NPC topology; operates with unipolar PWM at 16–20 kHz under 1000 V+ DC input.

Use Value: Tight V_CE(sat) distribution ensures uniform thermal loading across parallel legs, preventing premature failure in outdoor-rated enclosures.

Use Scenario: Primary inverter in IGBT-based inverter welders delivering 200–500 A DC output with rapid current slew rates.

IC Role / Device Role / Timing Role: High-current switching element in resonant or hard-switched DC output stage; sustains pulsed I_C up to 160 A (I_CP).

Use Value: 175 °C T_J rating and low R_thJC allow sustained arc initiation duty cycles without thermal shutdown, increasing welder uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N120A3	Higher V_CE(sat) = 2.4 V (typ.), lower Q_g = 95 nC, no integrated diode - requires external ultrafast diode.	Requires separate diode selection and layout; better suited for resonant topologies where diode recovery is managed externally.	Choose when gate drive power minimization is prioritized over board area and when diode recovery can be independently optimized.
Infineon IKW40N120H3	Lower E_off = 1.8 mJ, higher t_sc = 12 µs, same TO-247 package but standard lead length (not long leads).	Superior switching efficiency at high frequency (>15 kHz); less suitable for high-thermal-resistance heatsink interfaces requiring longer leads.	Prefer for high-frequency UPS or solar inverters where switching loss dominates; avoid if mechanical clearance mandates long-lead mounting.

Compared with STGWA40M120DF3, IXGN40N120A3 trades conduction loss for gate drive simplicity and external diode flexibility, while IKW40N120H3 improves switching efficiency but lacks long-lead mechanical compatibility - making STGWA40M120DF3 optimal for thermally demanding, space-constrained industrial drives requiring integrated diode reliability and mounting flexibility.

Availability

STGWA40M120DF3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and solar string inverters requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STGWA40M120DF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGWA40M120DF3 belongs to ST's M-series IGBT product line, engineered specifically for high-efficiency, high-reliability inverter systems where low conduction loss, short-circuit ruggedness, and safe paralleling are essential - targeting industrial drives, UPS, and renewable energy conversion.

FAQ

What is the difference between STGWA40M120DF3 and STGW40M120DF3?

STGWA40M120DF3 uses the TO-247 long leads package (L ≈ 20 mm), whereas STGW40M120DF3 uses the standard TO-247 (L ≈ 14.5 mm). Both share identical electrical specifications, silicon die, and marking "G40M120DF3", but differ mechanically to accommodate varied heatsink clearance and PCB mounting constraints.

Can STGWA40M120DF3 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable current sharing without external emitter resistors. ST recommends using matched gate resistors and symmetrical layout; parallel operation is validated up to four devices in industrial drive reference designs.

What gate resistor value is recommended for 16 kHz operation at 175 °C junction temperature?

A gate resistor of 10 Ω is specified in the datasheet for characterization (Table 5), yielding t_d(off) = 150 ns and E_off = 3.45 mJ at T_J = 175 °C. For 16 kHz operation, 10 Ω balances switching loss and EMI; reduce to 6–8 Ω only if dv/dt limits permit and thermal margin allows increased gate loss.

Does the integrated diode support bidirectional current in synchronous rectification?

No - the antiparallel diode is optimized for freewheeling in inverter leg configurations, not synchronous rectification. Its forward voltage (V_F = 2.85 V typ. at 40 A) and recovery characteristics are tuned for inductive load commutation, not low-V_F conduction; use discrete SiC Schottky diodes for true synchronous rectification.

STGWA40M120DF3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 40A

Power - Max:: 468 W

Switching Energy:: 1.03mJ (on), 480µJ (off)

Input Type:: Standard

Gate Charge:: 125 nC

Td (on/off) @ 25°C:: 35ns/140ns

Test Condition:: 600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr):: 355 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA40M120DF3 FAQ

1.How can I place an order for STGWA40M120DF3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA40M120DF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA40M120DF3 reliable?

The price and inventory of STGWA40M120DF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA40M120DF3 is usually 5 days.

3.What payment methods are accepted for STGWA40M120DF3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA40M120DF3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA40M120DF3?

STGWA40M120DF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA40M120DF3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA40M120DF3?

For technical support, including STGWA40M120DF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA40M120DF3 requirements.

6.How does Aetrix verify that STGWA40M120DF3 is sourced from the original manufacturer or authorized distributors?

All STGWA40M120DF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA40M120DF3 meets industry standards.

7.What is the process for return or replacement of STGWA40M120DF3?

All STGWA40M120DF3 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA40M120DF3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA40M120DF3 part is unused and in its original packaging.

Return procedure for STGWA40M120DF3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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