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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA50H65DFB2

Name: STGWA50H65DFB2
Brand: STMicroelectronics
SKU: STGWA50H65DFB2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA50H65DFB2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA50H65DFB2.pdf

Description:: DISCRETE

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Product details

Overview

STGWA50H65DFB2 from STMicroelectronics is a 650 V, 50 A high-speed IGBT with co-packaged soft-recovery diode in TO-247 long leads package, optimized for PFC, solar inverters, and DC fast charging. It delivers 1.55 V typical V_CE(sat) at 50 A/25 °C, 92 ns typ. diode trr, and 0.55 °C/W IGBT junction-to-case thermal resistance.

For engineers reviewing the STGWA50H65DFB2 datasheet, STGWA50H65DFB2 pinout, STGWA50H65DFB2 application, or STGWA50H65DFB2 equivalent, key selection criteria include conduction loss at 175 °C, diode reverse recovery charge (673 nC), switching energy balance (E_on = 910 µJ, E_off = 580 µJ), and thermal performance under pulsed 150 A operation.

Technical Context

This IGBT uses ST's trench gate field-stop HB2 architecture to reduce conduction losses at low currents and minimize tail current during turn-off. Its positive V_CE(sat) temperature coefficient enables stable parallel operation.

The integrated diode features very fast soft recovery (trr = 92 ns @ 25 °C), low Q_rr = 673 nC, and minimized dI_rr/dt (675 A/µs), reducing voltage overshoot and EMI in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage in solar string inverters.
I_C (T_C = 100 °C)	53 A - continuous output capability at industrial ambient temperatures without forced cooling.
V_CE(sat) (T_J = 175 °C)	1.9 V - low conduction loss maintained at maximum junction temperature, critical for UPS and welding thermal cycling.
E_off (T_J = 175 °C)	1090 µJ - quantified turn-off energy under worst-case thermal condition for snubber and heatsink sizing.
R_thJC (IGBT)	0.55 °C/W - enables compact heatsink design with ≤110 °C case rise at 272 W dissipation.
Q_rr (T_J = 25 °C)	673 nC - low reverse recovery charge reduces diode switching loss and commutation stress in PFC boost stages.
t_rr (T_J = 175 °C)	209 ns - soft recovery behavior preserved at elevated temperature, limiting dv/dt-induced shoot-through risk.

Pinout & Package

TO-247 long leads package with isolated tab (collector), 3-pin configuration: Gate (G), Collector (C), Emitter (E). Tab is electrically connected to collector terminal and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives 15 V logic-level drive; requires 151 nC total gate charge for full enhancement; sensitive to ±30 V transient spikes.
C (Tab)	Collector power terminal	High-current main power input; electrically tied to metal tab; must be mounted to heatsink with electrically insulating but thermally conductive interface.
E (Pin 3)	Emitter power return	Low-inductance emitter connection point; carries full load current and diode freewheeling current; referenced to gate drive ground.

Key Features

Feature	Design Value
Co-packaged soft-recovery diode	trr = 92 ns, Q_rr = 673 nC, and <1% tail current enable zero-voltage switching compatibility in resonant PFC designs.
Positive V_CE(sat) tempco	V_CE(sat) increases with temperature (1.55 V → 1.9 V from 25 °C to 175 °C), enabling natural current sharing in paralleled IGBT configurations.
Tight parameter distribution	V_GE(th) range 5–7 V and V_CE(sat) max 2.0 V ensure consistent gate drive timing and thermal derating across production lots.
High TJ rating	175 °C maximum junction temperature allows operation in enclosed EV charger enclosures without active airflow.
Low R_thJC	0.55 °C/W IGBT thermal resistance permits 272 W dissipation at T_C = 25 °C, supporting high-power density inverter modules.

Applications

Single-Phase PFC Converters

Solar String Inverters

Use Scenario: Boost-stage switch in 3.3 kW single-phase AC/DC front-end for server PSUs or industrial SMPS.

IC Role / Device Role / Timing Role: High-frequency (65–100 kHz) hard-switched IGBT controlling boost inductor current; diode handles freewheeling during off-time.

Use Value: Low V_CE(sat) (1.55 V) and soft diode recovery (92 ns trr) reduce conduction and switching losses, achieving >98.2% efficiency at full load.

Use Scenario: DC-side switching stage in 5–10 kW residential string inverters interfacing PV arrays to grid-tie converters.

IC Role / Device Role / Timing Role: DC link switch operating at 16–20 kHz; withstands 1000 V transients per IEC 62109; diode recovers during MPPT perturbation cycles.

Use Value: 650 V V_CES and 175 °C TJ rating support operation under high ambient + solar heating, maintaining reliability over 25-year field life.

Uninterruptible Power Supplies

EV DC Fast Charging Stations

Use Scenario: Inverter bridge in 10–20 kVA online UPS systems delivering clean 50/60 Hz sine wave output during mains failure.

IC Role / Device Role / Timing Role: IGBT conducts bidirectional current in H-bridge topology; diode provides freewheeling path during dead-time and regeneration.

Use Value: Tight V_CE(sat) distribution (±0.1 V) ensures balanced thermal loading across parallel legs, preventing premature failure during extended battery backup.

Use Scenario: Primary switching element in 150–350 kW liquid-cooled DC fast chargers converting 400–1000 V AC grid input to regulated 200–1000 V DC output.

IC Role / Device Role / Timing Role: High-current (≥150 A pulsed) switch in interleaved two-level or three-level NPC topologies; operates at 8–12 kHz with strict EMI limits.

Use Value: 150 A I_CP rating and 0.55 °C/W R_thJC allow short-duration peak power delivery while maintaining junction temperature below 175 °C under liquid cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	600 V V_CES, higher V_CE(sat) (1.8 V typ.), slower diode (trr = 130 ns), no soft recovery.	Limited to 400 V DC bus; unsuitable for 1000 V solar string surge testing or EV charger overvoltage margins.	Select when cost sensitivity outweighs 650 V margin and soft recovery requirements.
Infineon IKW50N65ES5	650 V V_CES, lower E_off (420 µJ), but higher Q_rr (1100 nC), non-soft diode.	Better turn-off efficiency but increased diode-induced voltage spikes in PFC; requires larger snubbers.	Prefer for low-E_off priority in fixed-frequency inverters where diode recovery is less critical.

Compared with IXGN50N60B3 and IKW50N65ES5, STGWA50H65DFB2 uniquely balances 650 V robustness, soft diode recovery, and tight V_CE(sat) distribution-making it optimal for high-reliability, high-efficiency PFC and solar applications where thermal stability and EMI control are mandatory.

Availability

STGWA50H65DFB2 is available at Aetrix Electronics and suitable for solar inverters, uninterruptable power supplies, and EV DC fast charging stations requiring stable component supply across multi-year production cycles.

Supply support for STGWA50H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's HB2-series high-speed IGBT portfolio, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, industrial motor drives, and EV infrastructure.

FAQ

What gate resistor value is recommended for optimal switching performance?

A 4.7 Ω gate resistor is specified in the datasheet for standard inductive load testing (V_CC = 400 V, I_C = 50 A). This value balances E_on/E_off trade-offs: lower values (<3 Ω) reduce turn-on time but increase E_off and di/dt stress; higher values (>10 Ω) suppress ringing but raise total switching loss by up to 35%.

Can STGWA50H65DFB2 be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (1.55 V at 25 °C → 1.9 V at 175 °C) ensures inherent current sharing. Successful parallel operation requires matched gate drive paths, symmetrical layout, and individual gate resistors (4.7 Ω ±5%) to prevent oscillation and unequal dynamic current division.

What is the maximum allowable case temperature for continuous 50 A operation?

At 50 A continuous collector current, the maximum case temperature is 100 °C per Table 1 (I_C = 53 A @ T_C = 100 °C). Exceeding this requires derating: at T_C = 110 °C, max I_C drops to ~45 A to maintain T_J ≤ 175 °C given R_thJC = 0.55 °C/W and V_CE(sat) = 1.85 V.

Does the co-packaged diode support synchronous rectification?

No-the diode is a dedicated fast soft-recovery anti-parallel diode optimized for freewheeling and commutation, not synchronous rectification. It lacks the low forward voltage and controlled reverse recovery needed for SR control; external MOSFETs or dedicated SR controllers are required for that function.

STGWA50H65DFB2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 86 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 50A

Power - Max:: 272 W

Switching Energy:: 910µJ (on), 580µJ (off)

Input Type:: Standard

Gate Charge:: 151 nC

Td (on/off) @ 25°C:: 28ns/115ns

Test Condition:: 400V, 50A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 92 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA50H65DFB2 FAQ

1.How can I place an order for STGWA50H65DFB2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA50H65DFB2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA50H65DFB2 reliable?

The price and inventory of STGWA50H65DFB2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA50H65DFB2 is usually 5 days.

3.What payment methods are accepted for STGWA50H65DFB2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA50H65DFB2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGWA50H65DFB2?

STGWA50H65DFB2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA50H65DFB2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA50H65DFB2?

For technical support, including STGWA50H65DFB2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA50H65DFB2 requirements.

6.How does Aetrix verify that STGWA50H65DFB2 is sourced from the original manufacturer or authorized distributors?

All STGWA50H65DFB2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA50H65DFB2 meets industry standards.

7.What is the process for return or replacement of STGWA50H65DFB2?

All STGWA50H65DFB2 units undergo pre-shipment inspection (PSI). If there is an issue with STGWA50H65DFB2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA50H65DFB2 part is unused and in its original packaging.

Return procedure for STGWA50H65DFB2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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