STMicroelectronics STGWA50HP65FB2

Overview

STGWA50HP65FB2 from STMicroelectronics is a 650 V, 50 A trench gate field-stop IGBT in TO-247 long leads package with co-packaged antiparallel protection diode, V_CE(sat) = 1.55 V (typ.) at I_C = 50 A and T_J = 25 °C, R_thJC = 0.55 °C/W, and E_off = 580 µJ (T_J = 25 °C) for high-efficiency welding and power factor correction inverters.

For engineers reviewing the STGWA50HP65FB2 datasheet, STGWA50HP65FB2 pinout, STGWA50HP65FB2 application, or STGWA50HP65FB2 equivalent, this page delivers verified electrical ratings, thermal performance curves, switching energy vs temperature, diode reverse recovery behavior at 175 °C, and safe operating area validation for fast-switching industrial power stages.

Technical Context

This IGBT belongs to ST's HB2 series, featuring an optimized trench gate field-stop structure that reduces conduction loss at low currents and lowers total switching energy-especially turn-off energy-via minimized tail current and tight parameter distribution. Its positive V_CE(sat) temperature coefficient enables inherent current sharing in parallel configurations.

The integrated antiparallel diode is rated for 5 A continuous forward current (T_C = 25 °C), exhibits t_rr = 140 ns and Q_rr = 21 nC at T_J = 25 °C, and maintains stable reverse recovery performance up to 175 °C (t_rr = 200 ns, Q_rr = 47.3 nC), supporting hard-switched PFC and inverter legs without external diode substitution.

Key Specifications

Pinout & Package

STGWA50HP65FB2 uses the TO-247 long leads package (standard 3-pin variant), with collector (C) on the metal tab, emitter (E) on pin 3, and gate (G) on pin 1. The case serves as the collector terminal, requiring insulated mounting in non-ground-referenced applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Compared with STGWA40HP65FB2, STGWA50HP65FB2 delivers 25% higher continuous current capability without increasing gate drive burden or thermal resistance; versus FGH40T65SHD, it eliminates diode matching uncertainty and reduces PCB footprint by 32% in bridge-leg layouts.

Availability

STGWA50HP65FB2 is available at Aetrix Electronics and suitable for industrial welding inverters, active power factor correction circuits, and induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STGWA50HP65FB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, power devices, and MEMS sensors for automotive, industrial, and consumer markets.

STGWA50HP65FB2 belongs to the HB2-series IGBT product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where low conduction loss, fast switching, and robust thermal performance are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for STGWA50HP65FB2?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs with duty cycle <0.01. Exceeding ±20 V continuously risks permanent gate oxide damage; gate drivers must include clamping or active regulation to stay within this limit under all operating and fault conditions.

Does STGWA50HP65FB2 require a negative gate voltage for reliable turn-off?

No, STGWA50HP65FB2 achieves robust turn-off with 0 V gate bias; its positive V_CE(sat) temperature coefficient and low tail current reduce susceptibility to dv/dt-induced turn-on. However, applying −5 V to −8 V improves noise immunity in high-dv/dt environments such as multi-level inverters or high-power welding arcs.

Can the co-packaged diode handle full freewheeling current in a half-bridge configuration?

Yes-the diode is rated for 5 A continuous forward current at T_C = 25 °C and 5 A at T_C = 100 °C, with pulsed rating of 10 A (t_p ≤ 1 µs). In typical PFC or welding half-bridge operation, diode conduction occurs only during dead-time and flyback intervals, keeping average current well within rating when properly heatsinked.

How does thermal resistance change between TO-247 long leads and TO-3PF packages for this IGBT series?

STGWA50HP65FB2 (TO-247 long leads) has R_thJC = 0.55 °C/W for the IGBT, while STGFW50HP65FB2 (TO-3PF) has R_thJC = 1.59 °C/W. This 65% lower thermal resistance enables ~2.9× higher power dissipation at equal ΔT, making TO-247 preferred for high-power-density designs where heatsink contact area is limited.