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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGWA50IH65DF

Name: STGWA50IH65DF
Brand: STMicroelectronics
SKU: STGWA50IH65DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGWA50IH65DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGWA50IH65DF.pdf

Description:: TRENCH GATE FIELD-STOP IGBT 650

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Product details

Overview

STGWA50IH65DF from STMicroelectronics is a 650 V, 50 A trench gate field-stop IGBT with co-packaged freewheeling diode in TO-247 long leads package, designed exclusively for soft-commutation resonant topologies. It delivers 1.5 V typical V_CE(sat) at 50 A/25 °C, 0.5 °C/W junction-to-case thermal resistance (IGBT), and minimized tail current for high-efficiency induction cooking and microwave oven inverters.

For engineers reviewing the STGWA50IH65DF datasheet, STGWA50IH65DF pinout, STGWA50IH65DF application, or STGWA50IH65DF equivalent, key selection criteria include soft-switching optimized switching energy (284 μJ E_off @ 320 V/50 A), positive V_CE(sat) temperature coefficient for parallel operation, and integrated low-V_F diode (1.75 V typ. @ 25 A/25 °C).

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to simultaneously reduce conduction losses (V_CE(sat) = 1.5 V typ. @ 50 A) and switching losses (E_off = 284 μJ typ. @ 320 V/50 A) under soft-commutation conditions. Its tight parameter distribution and 175 °C maximum junction temperature support reliable operation in thermally demanding resonant converters.

The integrated freewheeling diode features low forward voltage (1.75 V typ. @ 25 A/25 °C) and exhibits reduced reverse recovery charge, enabling efficient unidirectional current handling during zero-voltage switching transitions. The positive V_CE(sat) temperature coefficient ensures inherent current sharing in paralleled configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands full DC bus voltage in resonant half-bridge inverters up to 450 V RMS input.
I_C (cont. @ T_C = 100 °C)	50 A - Sustains continuous output current in induction cooktops operating at elevated heatsink temperatures.
V_CE(sat) (typ. @ 50 A/25 °C)	1.50 V - Enables <1.5 W conduction loss per device at rated current, reducing heatsink requirements.
E_off (typ. @ 320 V/50 A)	284 μJ - Minimizes turn-off energy in snubbed inductive loads, critical for ZVS efficiency in microwave ovens.
R_thJC (IGBT)	0.5 °C/W - Supports high power density designs with direct case mounting and thermal interface materials.
V_F (diode, typ. @ 25 A/25 °C)	1.75 V - Low forward drop reduces freewheeling losses and improves system-level efficiency in resonant tanks.
Q_g	158 nC - Gate charge optimized for standard 15 V gate drivers with moderate RG (e.g., 22 Ω) in soft-switching circuits.

Pinout & Package

TO-247 long leads package with isolated tab (collector-connected), featuring industry-standard mechanical dimensions (D = 21.0 mm, E = 15.8 mm, L = 20.0 mm) and RoHS-compliant ECOPACK2 construction.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal accepting 15 V logic-level drive; requires external gate resistor (e.g., 22 Ω) to damp oscillation and control dV/dt.
C (Pin 2, Tab)	Collector	Main high-side current path; electrically connected to metal tab for direct heatsink mounting and low-inductance return path.
E (Pin 3)	Emitter	Low-side reference node; separates gate drive ground from power ground to prevent shoot-through in half-bridge layouts.

Key Features

Feature	Design Value
Soft-commutation optimization	Minimized tail current and tuned carrier lifetime enable low-loss ZVS/ZCS transitions in resonant LLC and half-bridge topologies.
Positive V_CE(sat) tempco	Enables stable current sharing without external ballasting resistors when multiple devices operate in parallel.
Tight parameter distribution	Reduces binning requirements and simplifies thermal design across production batches in high-volume appliance manufacturing.
Co-packaged low-V_F diode	1.75 V forward drop at 25 A eliminates need for discrete diode placement, saving PCB area and parasitic inductance.
175 °C max junction temperature	Supports sustained operation in compact enclosures with limited airflow, such as built-in microwave oven inverters.

Applications

Induction Cooking Inverter

Microwave Oven Inverter

Use Scenario: High-frequency (20–50 kHz) resonant half-bridge driving spiral induction coils for precise pan detection and heating control.

IC Role / Device Role / Timing Role: Main switching device in upper leg of resonant inverter; conducts during ZVS turn-on and blocks during freewheeling phase.

Use Value: 1.5 V V_CE(sat) and 284 μJ E_off directly reduce total system losses by >8% versus prior-generation IGBTs at 5 kW output.

Use Scenario: 2.45 GHz magnetron power supply using asymmetrical half-bridge with snubber network for soft switching.

IC Role / Device Role / Timing Role: High-side switch controlling primary side of step-up transformer; operates with controlled dI/dt to limit EMI.

Use Value: Integrated low-V_F diode eliminates separate anti-parallel diode, reducing component count and layout complexity in space-constrained chassis.

Resonant Air Fryer Power Stage

Commercial Induction Hob Module

Use Scenario: Compact 1.8 kW resonant converter powering fan-assisted heating elements with variable frequency control.

IC Role / Device Role / Timing Role: Primary switching element in LLC topology; handles pulsed 50 A peak currents with 175 °C junction capability.

Use Value: 0.5 °C/W R_thJC allows direct mounting to aluminum extrusion heatsinks, eliminating thermal interface pads and lowering thermal resistance by 35%.

Use Scenario: Multi-zone 7.2 kW induction hob requiring paralleled IGBTs per zone for scalable power delivery.

IC Role / Device Role / Timing Role: One of two identical devices sharing load in parallel configuration; leverages positive V_CE(sat) tempco for self-balancing.

Use Value: Tight parameter spread (<±5% V_CE(sat)) ensures balanced current division without external current-sensing feedback loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar soft-switching IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	600 V rating, higher V_CE(sat) (1.8 V @ 50 A), no co-packaged diode; requires external ultrafast diode.	Limited to lower DC bus voltages (<400 V); unsuitable for 650 V-rated resonant designs without derating.	Select only if system DC link is ≤400 V and discrete diode integration is acceptable.
Infineon IKW50N65ES5	650 V, 50 A, but optimized for hard-switching; higher E_off (420 μJ @ 400 V/50 A) and negative V_CE(sat) tempco.	Requires active current balancing in parallel; less efficient in ZVS due to higher tail current.	Prefer only for non-resonant topologies where soft-switching is not implemented.

Compared with IXGN50N60B3 and IKW50N65ES5, STGWA50IH65DF uniquely combines 650 V rating, soft-switching-optimized E_off, co-packaged diode, and positive tempco-making it the only drop-in solution for high-efficiency induction and microwave inverters requiring ZVS operation.

Availability

STGWA50IH65DF is available at Aetrix Electronics and suitable for induction cooking inverters, microwave oven power supplies, resonant air fryers, and commercial induction hobs requiring stable component supply across multi-year production cycles.

Supply support for STGWA50IH65DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

This device belongs to ST's IH-series soft-switching IGBT portfolio, engineered specifically for high-frequency resonant converters in kitchen appliances where efficiency, thermal robustness, and reliability under repetitive soft-commutation stress are critical.

FAQ

What gate drive voltage is required for optimal performance?

STGWA50IH65DF is characterized for 15 V gate-emitter voltage (V_GE), delivering 1.5 V V_CE(sat) at 50 A and ensuring full enhancement while avoiding gate oxide overstress. Operation below 13 V increases V_CE(sat) nonlinearly; above 16 V risks long-term gate reliability degradation per DS11796 Section 3.2.

Can this IGBT be used in hard-switching topologies?

No-it is explicitly designed for soft-commutation only, as stated in its features and validated by low tail current and optimized carrier lifetime. Hard-switching use results in excessive E_off (up to 2.3× higher than rated), rapid junction temperature rise, and premature failure per Figure 14 and Table 6 test conditions.

Is the TO-247 tab electrically isolated?

No-the metal tab is internally connected to the collector (Pin 2), confirmed by the pinout diagram (NG1E3C2T notation) and package outline in DS11796 Figure 25. Electrical isolation must be achieved externally via insulating washers or ceramic spacers when mounting to grounded heatsinks.

What is the maximum allowable gate resistor value for ZVS operation?

For reliable ZVS in resonant half-bridges, RG must not exceed 22 Ω, as verified in DS11796 Figure 21 and Table 5. Higher values delay turn-off, increasing overlap time and defeating zero-voltage conditions-verified by 270 ns td(off) increase at TJ = 175 °C with RG = 22 Ω.

STGWA50IH65DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: IH

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 100 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 50A

Power - Max:: 300 W

Switching Energy:: 284µJ (off)

Input Type:: Standard

Gate Charge:: 158 nC

Td (on/off) @ 25°C:: -/260ns

Test Condition:: 400V, 50A, 22Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STGWA50IH65DF FAQ

1.How can I place an order for STGWA50IH65DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGWA50IH65DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGWA50IH65DF reliable?

The price and inventory of STGWA50IH65DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGWA50IH65DF is usually 5 days.

3.What payment methods are accepted for STGWA50IH65DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGWA50IH65DF transactions.

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4.How is shipping managed for STGWA50IH65DF?

STGWA50IH65DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGWA50IH65DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGWA50IH65DF?

For technical support, including STGWA50IH65DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGWA50IH65DF requirements.

6.How does Aetrix verify that STGWA50IH65DF is sourced from the original manufacturer or authorized distributors?

All STGWA50IH65DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGWA50IH65DF meets industry standards.

7.What is the process for return or replacement of STGWA50IH65DF?

All STGWA50IH65DF units undergo pre-shipment inspection (PSI). If there is an issue with STGWA50IH65DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGWA50IH65DF part is unused and in its original packaging.

Return procedure for STGWA50IH65DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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